MS69P05

MS69P05
60V P-Channel MOSFETs
Description
These P-Channel enhancement mode power field effect
transistors are using trench DMOS technology. This
advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are
well suited for high efficiency fast switching applications.
Features
• -60V,-20A, RDS(ON) =48mΩ@VGS = -10V
• Improved dv/dt capability
• Green Device Available
• 100% EAS Guaranteed
• Fast Switching
• RoHS compliant package
Application
• Motor Drive
• Power Tools
• LED Lighting
Graphic symbol
Packing & Order Information
50/Tube ; 1,000/Box
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (Tc=25°C unless otherwise specified)
Symbol
Parameter
Value
Unit
VDS
Drain to Source Voltage
-60
V
VGS
Gate to Source Voltage
±20
V
Continuous Drain Current (TC=25°C)
-20
Continuous Drain Current (TC=100°C)
-13
IDM
Drain Current Pulsed
-80
A
EAS
Single Pulsed Avalanche Energy
2
51
mJ
2
-32
A
46
W
0.37
W/°C
ID
IAS
PD
Single Pulsed Avalanche Current
Power Dissipation (TC = 25°C)
Power Dissipation – Derate above 25°C
Publication Order Number: [MS69P05]
A
© Bruckewell Technology Corporation Rev. A -2016
MS69P05
60V P-Channel MOSFETs
Absolute Maximum Ratings (Tc=25°C unless otherwise specified)
Symbol
Parameter
Value
Unit
TSTG
Storage Temperature Range
-55 to +150
°C
TJ
Operating Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
Value
Typ.
Symbol
Parameter
RθJC
Thermal Resistance,Junction-to-Case
--
--
2.7
°C/W
RθJA
Thermal Resistance,Junction-to-Ambient
--
--
62
°C/W
Min.
Units
Max.
Electrical Characteristics (TJ=25°C, unless otherwise noted)
Off Characteristics
Symbol
Parameter
Test Conditions
Min
Typ.
Max.
Units
BVDSS
VGS =0 V , ID = 250μA
-60
--
--
V
--
-0.05
--
V/°C
--
--
--
--
△BVDSS
/△TJ
Drain-Source Breakdown Voltage
BVDSS Temperature Coefficient
IDSS
Drain-Source Leakage Current
IGSS
Gate-Source Leakage,Forward
ID = 250μA, Referenced
to 25°C
VDS = -60 V , TJ= 25°C
VDS = -48 V , TJ= 125°C
VGS = ±20 V , VDS = 0 V
-1
-10
±100
uA
nA
On Characteristics
Symbol
Parameter
Test Conditions
Min
Typ.
Max.
Units
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 uA
-1.2
-1.6
-2.5
V
Static Drain-Source
VGS = -10 V , ID = -8 A
39
48
On-state Resis-tance
VGS = -4.5 V , ID = -4 A
53
65
△VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 uA
5
mV/°C
gfs
Forward Transconductance
VGS = -10V , ID = -6 A
11
S
RDS(ON)
Dynamic Characteristics
Symbol
Parameter
Test Conditions
Min
Typ.
Max.
Units
VDS = -30 V,
--
22.4
31
nC
VGS = -10 V,
--
4.1
6
nC
ID = -8 A
--
5.2
8
nC
--
13
25
ns
ID = -1 A,
--
42.4
81
ns
VGS = -10 V,
--
64.6
123
ns
RG = 6 Ω
--
16.4
31
ns
3,4
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
3,4
td(on)
Turn-On Delay Time
tr
Rise Time
3,4
3,4
3,4
td(off)
Turn-Off Delay Time
tf
Fall Time
3,4
Publication Order Number: [MS69P05]
3,4
mΩ
VDD = -30 V,
© Bruckewell Technology Corporation Rev. A -2016
MS69P05
60V P-Channel MOSFETs
Dynamic Characteristics
Symbol
Parameter
Test Conditions
CISS
Input Capacitance
COSS
Min
Typ.
Max.
Units
VGS = 0 V,
--
1250
1810
pF
Output Capacitance
VDS = 25 V,
--
85
125
pF
CRSS
Reverse Transfer Capacitance
f = 1MHz
--
65
95
pF
Rg
Gate resistance
VGS = 0 V, VDS = 0 V, F=1MHz
--
15
30
Ω
Min
Typ.
Max.
Units
Drain-Source Diode Characteristics and Maximum Ratings
Symbol
Parameter
Test Conditions
IS
Continuous Source Current
VD=VG=0V
--
--
-20
A
ISM
Pulsed Source Current
Force Current
--
--
-80
A
VSD
Diode Forward Voltage
IS = -1 A , VGS = 0 V , TJ=25°C
--
--
-1
V
VGS = 0, Is = -1 A,
--
--
--
ns
dI/dt=100A/us , TJ=25°C
--
--
--
uC
3
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
3
Note :
1.Repetitive Rating : Pulsed width limited by maximum junction temperature.
2.VDD=-25V,VGS=-10V,L=0.1mH,IAS=-32A.,RG=25Ω,Starting TJ=25℃
3.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.
4.Essentially independent of operating temperature.
Publication Order Number: [MS69P05]
© Bruckewell Technology Corporation Rev. A -2016
MS69P05
60V P-Channel MOSFETs
■Characteristics Curve
FIG.1-CONTINUOUS DRAIN CURRENT
VS. TC
FIG.2-NORMALIZED RDSON VS. TJ
FIG.3-NORMALIZED VTH VS. TJ
FIG.4-GATE CHARGE WAVEFORM
FIG.5-NORMALIZED TRANSIENT IMPEDANCE
FIG.6-MAXIMUM SAFE OPERATION AREA
Publication Order Number: [MS69P05]
© Bruckewell Technology Corporation Rev. A -2016
MS69P05
60V P-Channel MOSFETs
■Characteristics Curve
FIG.7-SWITCHING TIME WAVEFORM
Publication Order Number: [MS69P05]
FIG.8-EAS WAVEFORM
© Bruckewell Technology Corporation Rev. A -2016
MS69P05
60V P-Channel MOSFETs
Disclaimer
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generic applications.
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application. It is the customer’s responsibility to validate that a particular product with the properties
described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance
may vary over time.
Product specifications do not expand or otherwise modify Bruckewell’s terms and conditions of
purchase, including but not limited to the warranty expressed therein.
Publication Order Number: [MS69P05]
© Bruckewell Technology Corporation Rev. A -2016