MSD09N66 100V N-Channel MOSFETs Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Features • 100V, 45A, RDS(ON) =18mΩ@VGS = 10V • Improved dv/dt capability • Fast switching • 100% EAS Guaranteed • Green Device Available • RoHS compliant package Applications • Networking • Load Switch • LED applications Packing & Order Information Shipping850/Tube ; 2,500/Box TO-252 Pin Configuration Graphic symbol Publication Order Number: [MSD09N66] © Bruckewell Technology Corporation Rev. A -2014 MSD09N66 100V N-Channel MOSFETs MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings (TC=25°C unless otherwise noted) Symbol Parameter Value Unit VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±20 V Drain Current - Continuous (TC=25°C) 45 A Drain Current - Continuous (TC=100°C) 28 A ID IDM EAS IAS PD Drain Current - Pulsed 1 180 A 2 45 mJ 2 30 A Power Dissipation (TC=25°C) 102 W Power Dissipation - Derate above 25°C 0.82 W/°C Single Pulse Avalanche Energy Single Pulse Avalanche Current TJ Storage Temperature Range -50 to +150 °C TSTG Operating Junction Temperature Range -50 to +150 °C Thermal Characteristics Symbol Parameter Typ. Max. RθJc Thermal Resistance Junction to ambient -- 62 RθJA Thermal Resistance Junction to Case -- 1.22 Units °C/W Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Off Characteristics Symbol Parameter Test Conditions Min Drain-Source Breakdown Voltage VGS = VGS, ID = 250uA 100 BVDSS Temperature Coefficient Reference to 25°C , ID = 1mA IGSS Gate-Source Leakage Current VDS = 0 V , VGS = ±20 V IDSS Drain-Source Leakage Current BVDSS △BVDSS /△TJ On Characteristics Symbol Parameter RDS(on) Drain-Source On-Resistance Max. 0.05 V/°C ±100 1 VDS = 80 V , VGS = 0 V , TJ= 125°C 10 Min Typ. Max. VGS = 10 V, ID = 25 A 15 18 VGS = 6 V , ID = 15 A 17 22 VGS = 4.5 V , ID = 6 A 25 38 2 3 nA uA Units mΩ VGS(th) Gate Threshold Voltage VDS = VGS, ID =-250μA △VGS(th) V GS(th) Temperature Coefficient VDS = VGS, ID =-250μA -5 mV/°C gfs Forward Tranconductance VDS = 10 V , ID = 3 A 10 S Publication Order Number: [MSD09N66] 1 Units V VDS = 100 V , VGS = 0 V , TJ= 25°C Test Conditions 3 Typ. V © Bruckewell Technology Corporation Rev. A -2014 MSD09N66 100V N-Channel MOSFETs Dynamic and switching Characteristics Symbol Parameter Qg Test Conditions Min Typ. Max. Units -- 36.8 68 nC -- 9.3 18 nC -- 9.8 19 nC -- 20 40 ns ID = 1 A , RG = 6 Ω, -- 15 30 ns VGS = 10 V , VDD = 50 V -- 45 80 ns -- 21 40 ns -- 1820 3300 pF -- 170 340 pF -- 90 180 pF -- 1.35 2.6 Ω Min Typ. Max. Units -- -- 45 A -- -- 90 A -- -- 1 V 3,4 Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge td(on) Turn-On Delay Time 3,4 3,4 Rise Time td(off) Turn-Off Delay Time tf Fall Time CISS Input Capacitance VGS = 10 V 3,4 3,4 tr VDS = 50 V , ID = 5 A, 3,4 3,4 COSS Output Capacitance CRSS Reverse Transfer Capacitance Rg Total Gate Charge VDS = 50 V f = 1 MHz , VGS = 0 V VDS = 0 V , f = 1 MHz , VGS = 0 V Drain-Source Diode Characteristics and Maximum Ratings Symbol Parameter Test Conditions IS Continuous Source Current VG = VD = 0 V , Force Current ISM Pulsed Source Current VSD Diode Forward Voltage VGS = 0 V , IS = 1 A , TJ = 25°C trr Reverse Recovery Time IS = 1 A , di/dt=100A/μs , ns Qrr Reverse Recovery Charge TJ=25°C nC Note : 1.Repetitive Rating : Pulsed width limited by maximum junction temperature. 2.VDD=50V,VGS=10V,L=0.1mH,IAS=30A.,RG=25Ω,Starting TJ=25℃. 3.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 4.Essentially independent of operating temperature. Publication Order Number: [MSD09N66] © Bruckewell Technology Corporation Rev. A -2014 MSD09N66 100V N-Channel MOSFETs ■Characteristics Curve FIG.1-CONTINUOUS DRAIN CURRENT VS. TC FIG.2-NORMALIZED RDSON VS. TJ FIG.3-NORMALIZED VTH VS. TJ FIG.4-GATE CHARGE WAVEFORM FIG.5-NORMALIZED TRANSIENT IMPEDANCE FIG.6-MAXIMUM SAFE OPERATION AREA Publication Order Number: [MSD09N66] © Bruckewell Technology Corporation Rev. A -2014 MSD09N66 100V N-Channel MOSFETs ■Characteristics Curve FIG.7-SWITCHING TIME WAVEFORM Publication Order Number: [MSD09N66] FIG.8-EAS WAVEFORM © Bruckewell Technology Corporation Rev. A -2014 MSD09N66 100V N-Channel MOSFETs Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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