SPP15P10P Preliminary data SIPMOS Small-Signal-Transistor Feature Product Summary • P-Channel VDS -100 V • Enhancement mode RDS(on) 0.24 Ω • Avalanche rated ID -15 A • dv/dt rated P-TO220-3-1 Drain pin 2 Type Package Ordering Code SPP15P10P P-TO220-3-1 Q67042-S4166 Gate pin1 Source pin 3 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Value Unit A TC=25°C -15 TC=100°C -10.6 ID puls -60 EAS 230 dv/dt 6 Gate source voltage VGS ±20 V Power dissipation Ptot 128 W -55... +175 °C Pulsed drain current TC=25°C Avalanche energy, single pulse mJ ID =-15 A , VDD =-25V, RGS=25Ω Reverse diode dv/dt kV/µs IS =-15A, VDS =-48V, di/dt=-200A/µs, Tjmax =150°C TC=25°C Operating and storage temperature Tj , Tstg 55/175/56 IEC climatic category; DIN IEC 68-1 Page 1 2002-07-26 SPP15P10P Preliminary data Thermal Characteristics Parameter Symbol Values Unit min. typ. max. - - 1.17 - - 75 - - 45 Characteristics Thermal resistance, junction - case RthJC SMD version, device on PCB: RthJA @ min. footprint @ 6 cm 2 cooling area 1) K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. -100 - - -4 -3 -2.1 Static Characteristics Drain-source breakdown voltage V(BR)DSS V VGS =0, ID=-250µA Gate threshold voltage, VGS = VDS VGS(th) ID =-1.54mA Zero gate voltage drain current µA IDSS VDS =-100V, VGS =0, Tj =25°C - -0.1 -1 VDS =-100V, VGS =0, Tj =150°C - -10 -100 IGSS - -10 -100 nA RDS(on) - 0.18 0.24 Ω Gate-source leakage current VGS =-20V, VDS =0 Drain-source on-state resistance VGS =-10V, ID =-10.6A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2002-07-26 SPP15P10P Preliminary data Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. 4.7 9.3 - S pF Dynamic Characteristics Transconductance gfs |VDS|≥ 2*|ID |*RDS(on)max ID =-10.7A Input capacitance Ciss VGS =0, VDS =-25V, - 944 1180 Output capacitance Coss f=1MHz - 226 283 Reverse transfer capacitance Crss - 91 114 Turn-on delay time td(on) VDD =-50V, VGS =-10V, - 8.9 13.4 Rise time tr ID =-15A, RG =6Ω - 30 45 Turn-off delay time td(off) - 35 53 Fall time tf - 22 33 - -4.5 -6.7 - -15.3 -23 - -33.4 -50 V(plateau) VDD =-80V, ID =-15A - -5.7 - V IS - - -15 A - - -60 ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD =-80V, ID =-15A VDD =-80V, ID =-15A, nC VGS =0 to -10V Gate plateau voltage Reverse Diode Inverse diode continuous TA=25°C forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage VSD VGS =0, |IF | = |IS | - -0.94 Reverse recovery time trr VR =-50V, |IF | = |IS |, - 100 150 ns Reverse recovery charge Qrr diF /dt=100A/µs - 419 628 nC Page 3 -1.35 V 2002-07-26 SPP15P10P Preliminary data 1 Power dissipation 2 Drain current Ptot = f (TC ) ID = f (TC ) parameter: |VGS | ≥ 10V SPP15P10P 3.6 -16 W A -12 2.4 ID Ptot 2.8 SPP15P10P -10 2 -8 1.6 -6 1.2 -4 0.8 -2 0.4 0 0 20 40 60 80 0 0 100 120 140 160 °C 190 20 40 60 80 100 120 140 160 °C 190 TC TC 3 Safe operating area 4 Max. transient thermal impedance ID = f ( VDS ) ZthJC = f (tp ) parameter : D = 0 , TC = 25 °C parameter : D = tp /T -10 2 SPP15P10P 10 1 SPP15P10P K/W tp = 18.0µs 10 0 Z thJC ID A 100 µs 10 -1 -10 1 D = 0.50 10 -2 0.20 / ID 0.10 0.05 DS 1 ms =V n) S(o DC -10 0 -10 1 -10 2 0.01 single pulse 10 ms RD -10 0 -1 -10 0.02 10 -3 V -10 3 VDS 10 -4 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp Page 4 2002-07-26 SPP15P10P Preliminary data 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS ) RDS(on) = f (ID ) parameter: Tj =25°C, -VGS parameter: VGS ; Tj =25°C, -VGS 1 19.9V A 10V 8V 7V 32 6V 5.5V 28 5V 4.5V 24 4V Ω 0.7 0.6 20 0.5 16 0.4 12 0.3 8 0.2 4 0.1 0 0 1 4V 4.5V 5V 5.5V 6V 7V 8V 10V 19.9V 0.8 RDS(on) -I D 40 2 3 4 5 6 V 0 0 8 5 10 15 20 25 30 -VDS A 40 -ID 7 Typ. transfer characteristics 8 Typ. forward transconductance ID= f ( VGS ); |VDS |≥ 2 x |ID | x RDS(on)max gfs = f(ID) parameter: Tj = 25 °C parameter: Tj =25°C 14 30 A S 24 10 20 g fs -I D 22 18 8 16 14 6 12 10 4 8 6 2 4 2 0 0 1 2 3 4 5 V 0 0 7 -VGS 4 8 12 16 20 24 A 30 -ID Page 5 2002-07-26 SPP15P10P Preliminary data 9 Drain-source on-state resistance 10 Typ. gate threshold voltage RDS(on) = f (Tj ) VGS(th) = f (Tj) parameter : ID = -10.6 A, VGS = -10 V parameter: VGS = VDS SPP15P10P 5.2 0.75 Ω 4.4 RDS(on) 0.6 98% 4 0.55 3.6 0.5 typ. 3.2 0.45 2.8 0.4 0.35 2.4 2% 0.3 98% 2 0.25 1.6 0.2 typ 1.2 0.15 0.8 0.1 0.4 0.05 0 -60 -20 20 60 100 140 °C 0 -60 200 -20 20 60 100 180 Tj 11 Typ. capacitances 12 Forward character. of reverse diode C = f (VDS) IF = f (VSD ) parameter: VGS =0, f=1 MHz, Tj = 25 °C parameter: Tj 10 4 -10 2 pF SPP15P10P A Ciss -10 1 C IF 10 3 Coss Crss 10 2 -10 0 Tj = 25 °C typ Tj = 175 °C typ Tj = 25 °C (98%) Tj = 175 °C (98%) 10 1 0 4 8 12 16 20 24 28 V 36 -VDS -10 -1 0 -0.4 -0.8 -1.2 -1.6 -2 -2.4 V -3 VSD Page 6 2002-07-26 SPP15P10P Preliminary data 13 Typ. avalanche energy 14 Typ. gate charge EAS = f (Tj ); par.: ID = -15 A , VGS = f (QGate ) VDD = -25 V, RGS = 25 Ω parameter: ID = -15 A pulsed, Tj = 25°C 250 -16 mJ SPP15P10P V 200 VGS E AS -12 175 150 20% -10 50% 80% 125 -8 100 -6 75 -4 50 -2 25 0 25 50 75 100 125 °C 175 Tj 0 0 10 20 30 40 nC 55 |QG | 15 Drain-source breakdown voltage V(BR)DSS = f (Tj ) SPP15P10P -120 V (BR)DSS V -114 -112 -110 -108 -106 -104 -102 -100 -98 -96 -94 -92 -90 -60 -20 20 60 100 140 °C 200 Tj Page 7 2002-07-26 Preliminary data SPP15P10P Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 8 2002-07-26