NTMFD4C20N D

NTMFD4C20N
Dual N-Channel Power
MOSFET
30 V, High Side 18 A / Low Side 27 A, Dual
N−Channel SO8FL
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Features
•
•
•
•
Co−Packaged Power Stage Solution to Minimize Board Space
Minimized Parasitic Inductances
Optimized Devices to Reduce Power Losses
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
V(BR)DSS
RDS(ON) MAX
ID MAX
7.3 mW @ 10 V
Q1 Top FET
30 V
18 A
10.8 mW @ 4.5 V
Q2 Bottom
FET
30 V
3.4 mW @ 10 V
27 A
5.2 mW @ 4.5 V
• DC−DC Converters
• System Voltage Rails
• Point of Load
D1
(2, 3, 4, 9)
(1) G1
S1/D2 (10)
(8) G2
S2 (5, 6, 7)
PIN CONNECTIONS
D1 4
D1 3
D1 2
5 S2
9
D1
6 S2
10
S1/D2
7 S2
G1 1
8 G2
(Bottom View)
MARKING
DIAGRAM
1
DFN8
CASE 506BX
4C20N
AYWZZ
1
4C20N
A
Y
W
ZZ
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Lot Traceability
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2013
December, 2013 − Rev. 3
1
Publication Order Number:
NTMFD4C20N/D
NTMFD4C20N
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Drain−to−Source Voltage
Q1
Drain−to−Source Voltage
Q2
Gate−to−Source Voltage
Q1
Gate−to−Source Voltage
Q2
Continuous Drain Current RqJA (Note 1)
TA = 25°C
Q1
Symbol
Value
Unit
VDSS
30
V
VGS
±20
V
ID
12
TA = 85°C
TA = 25°C
8.6
Q2
18
TA = 85°C
Power Dissipation
RqJA (Note 1)
TA = 25°C
Continuous Drain Current RqJA ≤ 10 s (Note 1)
TA = 25°C
13
Q1
PD
Q2
Q1
Steady
State
ID
TA = 25°C
Continuous Drain Current
RqJA (Note 2)
TA = 25°C
27.4
Q1
PD
Q1
ID
Pulsed Drain Current
TA = 25°C
tp = 10 ms
13.7
A
9.9
Q1
PD
Q2
Operating Junction and Storage Temperature
W
9.1
6.6
Q2
TA = 85°C
TA = 25 °C
4.37
4.6
TA = 85°C
Power Dissipation
RqJA (Note 2)
A
19.8
Q2
TA = 25°C
W
18.2
13.1
Q2
TA = 85°C
Power Dissipation
RqJA ≤ 10 s (Note 1)
1.88
1.97
TA = 85°C
TA = 25°C
A
Q1
W
1.15
IDM
55
TJ, TSTG
−55 to +150
°C
IS
4.0
A
Q2
Q1
1.09
A
82
Q2
Source Current (Body Diode)
Q1
Q2
Drain to Source DV/DT
Single Pulse Drain−to−Source Avalanche Energy (TJ = 25C, VDD
= 50 V, VGS = 10 V, IL = XX Apk, L = 0.1 mH, RG = 25 W)
4.2
dV/dt
6
V/ns
16
mJ
18
Q1
EAS
29
Q2
EAS
42
TL
260
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Surface−mounted on FR4 board using 1 sq−in pad, 2 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size of 100 mm2.
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2
NTMFD4C20N
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Ambient – Steady State (Note 3)
FET
Symbol
Value
Q1
RqJA
66.5
Q2
Junction−to−Ambient – Steady State (Note 4)
63.3
Q1
RqJA
114.3
Q2
Junction−to−Ambient – (t ≤ 10 s) (Note 3)
108.7
Q1
RqJA
°C/W
28.6
Q2
Junction−to−Case – (Drain)
Unit
27.2
Q1
RqJC
5.4
Q2
3.7
3. Surface−mounted on FR4 board using 1 sq−in pad, 2 oz Cu.
4. Surface−mounted on FR4 board using the minimum recommended pad size of 100 mm2.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
FET
Symbol
Test Condition
Min
Drain−to−Source Breakdown
Voltage
Q1
V(BR)DSS
VGS = 0 V, ID = 250 mA
30
VGS = 0 V, ID = 1 mA
30
Drain−to−Source Breakdown
Voltage Temperature Coefficient
Q1
Zero Gate Voltage Drain
Current
Q1
Typ
Max
Unit
OFF CHARACTERISTICS
Q2
Q2
V(BR)DSS/
TJ
IDSS
Q2
Gate−to−Source Leakage
Current
Q1
mV/°C
14.5
12
VGS = 0 V,
VDS = 24 V
VGS = 0 V,
VDS = 24 V
IGSS
V
TJ = 25°C
1
TJ = 125°C
10
TJ = 25°C
10
VDS = 0 V, VGS = ±20 V
±100
Q2
mA
nA
±100
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Q1
VGS(TH)
VGS = VDS, ID = 250 mA
Q2
Negative Threshold Temperature Coefficient
Q1
Drain−to−Source On Resistance
Q1
Q2
Q1
2.1
1.3
VGS(TH)/
TJ
RDS(on)
Q2
Forward Transconductance
1.3
gFS
V
2.1
mV/°C
4.7
5.1
VGS = 10 V
ID = 10 A
5.8
7.3
VGS = 4.5 V
ID = 10 A
8.7
10.8
VGS = 10 V
ID = 20 A
2.7
3.4
VGS = 4.5 V
ID = 20 A
4.0
5.2
VDS = 1.5 V, ID = 10 A
Q2
43
68
5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
6. Switching characteristics are independent of operating junction temperatures.
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3
mW
S
NTMFD4C20N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
FET
Symbol
Test Condition
Min
Typ
Max
Unit
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
970
CISS
COSS
1950
VGS = 0 V, f = 1 MHz, VDS = 15 V
pF
990
125
CRSS
50
9.3
QG(TOT)
13
1.6
QG(TH)
VGS = 4.5 V, VDS = 15 V; ID = 10 A
QGS
3.3
nC
3.3
6.0
4.2
QGD
QG(TOT)
430
3.0
VGS = 10 V, VDS = 15 V; ID = 10 A
19
nC
29
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Q1
Q2
Q1
tr
Q2
Q1
Q2
9.0
td(ON)
11
33
VGS = 4.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
td(OFF)
Q1
ns
15
20
5.0
tf
Q2
32
5.0
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Q1
Q2
Q1
tr
Q2
Q1
Q2
6.0
td(ON)
8.0
26
VGS = 10 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
td(OFF)
Q1
ns
18
25
4.0
tf
Q2
26
4.0
DRAIN−SOURCE DIODE CHARACTERISTICS
VGS = 0 V,
IS = 3 A
Q1
Forward Voltage
VSD
Q2
VGS = 0 V,
IS = 3 A
5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
6. Switching characteristics are independent of operating junction temperatures.
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4
TJ = 25°C
0.75
TJ = 125°C
0.62
TJ = 25°C
0.45
TJ = 125°C
0.37
1.0
0.70
V
NTMFD4C20N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
FET
Symbol
Test Condition
Min
Typ
Max
Unit
DRAIN−SOURCE DIODE CHARACTERISTICS
Reverse Recovery Time
Q1
Q2
Q1
Charge Time
Q2
Q1
Discharge Time
Q2
Reverse Recovery Charge
Q1
Q2
23
tRR
38
11.6
ta
ns
18.6
VGS = 0 V, dIS/dt = 100 A/ms, IS =
30 A
11.4
tb
19.4
10
QRR
nC
25
PACKAGE PARASITIC VALUES
Source Inductance
Drain Inductance
Gate Inductance
Gate Resistance
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
0.38
LS
nH
0.65
0.054
LD
nH
0.007
TA = 25°C
1.5
LG
nH
1.5
RG
0.3
1.0
2.0
0.3
1.0
2.0
W
5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
6. Switching characteristics are independent of operating junction temperatures.
ORDERING INFORMATION
Device
NTMFD4C20NT1G
Package
Shipping†
DFN8
(Pb−Free)
1500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
NTMFD4C20N
TYPICAL CHARACTERISTICS − Q1
4.0 V
4.2 V to 10 V
80
3.8 V
TJ = 25°C
ID, DRAIN CURRENT (A)
3.6 V
3.4 V
3.2 V
3.0 V
2.8 V
1
2
4
3
40
30
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Figure 2. Transfer Characteristics
ID = 30 A
0.012
0.010
0.008
0.006
0.004
4.0
5.0
6.0
7.0
8.0
9.0
VGS, GATE−TO−SOURCE VOLTAGE (V)
10
4.5 5.0
0.020
0.018
TJ = 25°C
0.016
0.014
0.012
VGS = 4.5 V
0.010
0.008
VGS = 10 V
0.006
0.004
0.002
10
20
30
40
50
60
70
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. VGS
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.7
10000
VGS = 0 V
ID = 30 A
VGS = 10 V
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
TJ = −55°C
Figure 1. On−Region Characteristics
0.014
1.5
TJ = 25°C
VGS, GATE−TO−SOURCE VOLTAGE (V)
0.016
1.6
TJ = 125°C
20
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
0.018
3.0
50
0
5
0.020
0.002
60
10
2.6 V
0
VDS = 5 V
70
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
ID, DRAIN CURRENT (A)
65
60
55
50
45
40
35
30
25
20
15
10
5
0
1.4
1.3
1.2
1.1
1.0
1000
TJ = 150°C
TJ = 125°C
100
TJ = 85°C
0.9
0.8
0.7
−50
−25
0
25
50
75
100
125
150
10
5
10
15
20
25
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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6
30
NTMFD4C20N
TYPICAL CHARACTERISTICS − Q1
C, CAPACITANCE (pF)
VGS = 0 V
TJ = 25°C
Ciss
1000
VGS, GATE−TO−SOURCE VOLTAGE (V)
1200
800
Coss
600
400
Crss
200
0
0
5
10
15
20
25
30
QT
8
6
Qgs
4
Qgd
TJ = 25°C
VDD = 15 V
VGS = 10 V
ID = 30 A
2
0
0
2
4
6
8
10
20
IS, SOURCE CURRENT (A)
18
td(on)
tr
td(off)
tf
1
10
16
14
12
10
8
6
4
0
0.4
100
20
VGS = 0 V
TJ = 125°C
2
TJ = 25°C
0.5
0.6
0.7
0.8
0.9
1.0
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
10 ms
100 ms
10
1 ms
10 ms
1
0 V < VGS < 10 V
Single Pulse
TC = 25°C
RDS(on) Limit
Thermal Limit
Package Limit
0.01
0.1
dc
1
10
EAS, SINGLE PULSE DRAIN−TO−
SOURCE AVALANCHE ENERGY (mJ)
RG, GATE RESISTANCE (W)
100
ID, DRAIN CURRENT (A)
18
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
10
0.01
16
Figure 7. Capacitance Variation
100
0.1
14
Qg, TOTAL GATE CHARGE (nC)
VDD = 15 V
ID = 15 A
VGS = 10 V
1
12
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
1000
t, TIME (ns)
10
100
14
ID = 17 A
12
10
8
6
4
2
0
25
50
75
100
125
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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7
150
NTMFD4C20N
TYPICAL CHARACTERISTICS − Q1
100
Duty Cycle = 50%
R(t) (°C/W)
10
1
20%
10%
5%
2%
1%
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.1
0.01
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Response
100
60
ID, DRAIN CURRENT (A)
50
GFS (S)
40
30
20
10
0
0
10
20
30
40
50
60
70
TA = 25°C
1
1.E−08
80
TA = 85°C
10
1.E−07
1.E−06
1.E−05
1.E−04 1.E−03
ID (A)
PULSE WIDTH (SECONDS)
Figure 14. GFS vs. ID
Figure 15. Avalanche Characteristics
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8
NTMFD4C20N
0.028
0.026
0.024
0.022
0.020
0.018
0.016
0.014
0.012
0.010
0.008
0.006
0.004
0.002
3.0
TJ = 25°C
3.8 V
3.6 V
4 V to 6.5 V
ID, DRAIN CURRENT (A)
140
130 10 V
120
110
100
90
80
70
60
50
40
30
20
10
0
0
3.4 V
3.2 V
3.0 V
2.8 V
2.6 V
1
2
3
5
4
140
130 VDS = 5 V
120
110
100
90
80
70
60
50
40
30
20
10
0
0
0.5 1.0
2.0
2.5
3.0
3.5
4.0
Figure 17. Transfer Characteristics
ID = 30 A
TJ = 25°C
4.0
5.0
6.0
7.0
8.0
9.0
0.008
4.5
TJ = 25°C
0.007
0.006
0.005
VGS = 4.5 V
0.004
VGS = 10 V
0.003
0.002
10
10
20
30
40
50
60
70
ID, DRAIN CURRENT (A)
Figure 19. On−Resistance vs. Drain Current
and Gate Voltage
10000
1.7
VGS = 0 V
ID = 30 A
VGS = 10 V
TJ = 150°C
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
TJ = −55°C
1.5
Figure 16. On−Region Characteristics
Figure 18. On−Resistance vs. VGS
1.5
TJ = 25°C
VGS, GATE−TO−SOURCE VOLTAGE (V)
VGS, GATE−TO−SOURCE VOLTAGE (V)
1.6
TJ = 125°C
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
ID, DRAIN CURRENT (A)
TYPICAL CHARACTERISTICS − Q2
1.4
1.3
1.2
1.1
1.0
1000
TJ = 125°C
100
TJ = 85°C
0.9
0.8
0.7
−50
−25
0
25
50
75
100
125
150
10
5
10
15
20
25
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 20. On−Resistance Variation with
Temperature
Figure 21. Drain−to−Source Leakage Current
vs. Voltage
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9
30
NTMFD4C20N
3000
VGS = 0 V
TJ = 25°C
C, CAPACITANCE (pF)
2750
2500
2250
Ciss
2000
1750
1500
1250
1000
Coss
750
500
250
0
Crss
0
5
10
15
20
25
30
VGS, GATE−TO−SOURCE VOLTAGE (V)
TYPICAL CHARACTERISTICS − Q2
QT
8
6
4
Qgd
Qgs
TJ = 25°C
VDD = 15 V
VGS = 10 V
ID = 30 A
2
0
0
4
8
12
16
28
Figure 22. Capacitance Variation
Figure 23. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
20
IS, SOURCE CURRENT (A)
18
td(off)
td(on)
100
tr
tf
10
1
10
16
14
12
10
8
6
4
0
0.4
100
32
VGS = 0 V
TJ = 125°C
TJ = 25°C
2
0.5
0.6
0.7
0.8
0.9
1.0
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 24. Resistive Switching Time Variation
vs. Gate Resistance
Figure 25. Diode Forward Voltage vs. Current
100
10 ms
100 ms
1 ms
10
10 ms
1
0.1
0.01
0.01
0 V < VGS < 10 V
Single Pulse
TC = 25°C
RDS(on) Limit
Thermal Limit
Package Limit
0.1
dc
1
10
EAS, SINGLE PULSE DRAIN−TO−
SOURCE AVALANCHE ENERGY (mJ)
RG, GATE RESISTANCE (W)
1000
ID, DRAIN CURRENT (A)
24
Qg, TOTAL GATE CHARGE (nC)
VDD = 15 V
ID = 15 A
VGS = 10 V
1
20
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
1000
t, TIME (ns)
10
100
45
ID = 29 A
40
35
30
25
20
15
10
5
0
25
50
75
100
125
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 26. Maximum Rated Forward Biased
Safe Operating Area
Figure 27. Maximum Avalanche Energy vs.
Starting Junction Temperature
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10
150
NTMFD4C20N
TYPICAL CHARACTERISTICS − Q2
100
Duty Cycle = 50%
R(t) (°C/W)
10
1
20%
10%
5%
2%
1%
0.1
0.01
Single Pulse
0.000001
0.00001
0.0001
0.001
0.1
0.01
1
10
100
1000
PULSE TIME (sec)
Figure 28. Thermal Response
100
120
ID, DRAIN CURRENT (A)
100
GFS (S)
80
60
40
20
0
0
10
20
30
40
50
60
70
TA = 25°C
1
1.E−07
80
TA = 85°C
10
1.E−06
1.E−05
1.E−04
ID (A)
PULSE WIDTH (SECONDS)
Figure 29. GFS vs. ID
Figure 30. Avalanche Characteristics
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11
1.E−03
NTMFD4C20N
PACKAGE DIMENSIONS
2X
DFN8 5x6, 1.27P Dual Flag (SO8FL−Dual−Asymmetrical)
CASE 506BX
ISSUE C
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSIONS b AND b1 APPLY TO PLATED FEATURES AND ARE
MEASURED BETWEEN 0.15 AND 0.25 MM FROM TERMINAL TIPS.
4. COPLANARITY APPLIES TO THE EXPOSED PADS AS WELL AS THE
TERMINALS.
5. DIMENSIONS D1 AND E1 DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
6. SEATING PLANE IS DEFINED BY THE TERMINALS. A1 IS DEFINED
AS THE DISTANCE FROM THE SEATING PLANE TO THE LOWEST
POINT ON THE PACKAGE BODY.
0.20 C
D
A
B
D1
8
PIN ONE
IDENTIFIER
7
6
ÉÉÉ
ÉÉÉ
1
2
2X
0.20 C
5
E1 E
4X
c
3
DIM
A
A1
b
b1
c
D
D1
D2
E
E1
E2
E3
e
G
G1
h
L
h
A1
4
TOP VIEW
0.10 C
DETAIL A
A
0.10 C
NOTE 4
C
SIDE VIEW
DETAIL A
SEATING
PLANE
NOTE 6
e
1
8X
DETAIL B
e/2
L
4
E3
0.10
REF
G1
b
E2
0.10
C A B
0.05
C
DETAIL B
MILLIMETERS
MIN
MAX
0.90
1.10
0.00
0.05
0.41
0.61
0.41
0.61
0.23
0.33
5.15 BSC
4.50
5.10
3.50
4.22
6.15 BSC
5.50
6.10
2.27
2.67
0.82
1.22
1.27 BSC
0.63 BSC
1.72 BSC
−−−
12 _
0.35
0.55
NOTE 3
RECOMMENDED
SOLDERING FOOTPRINT*
PACKAGE
OUTLINE
G
5.35
4X
0.69
8X
0.64
0.10 C A B
DETAIL C
8
5
D2
0.10 C A B
BOTTOM VIEW
6X b1
NOTE 3
1.97
6.48
DETAIL C
2.68
2.23
1.22
4X
0.69
1.27
PITCH
DIMENSION: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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