INFINEON Q62702-B824

BBY 53
Silicon Tuning Diode
Preliminary data
• High Q hyperabrupt tuning diode
• Designed for low tuning voltage operation
for VCO's in mobile communications equipment
• High ratio at low reverse voltage
Type
Marking Ordering Code
Pin Configuration
BBY 53
S7s
1 = A1
Q62702-B824
Package
2 = A2
3 = C1/C2 SOT-23
Maximum Ratings
Parameter
Symbol
Values
Unit
Diode reverse voltage
VR
6
V
Forward current
IF
20
mA
Operating temperature range
Top
- 55 ... + 150
Storage temperature
Tstg
- 55 ... + 150
Semiconductor Group
1
°C
Feb-04-1997
BBY 53
Electrical Characteristics at TA=25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
Unit
max.
DC characteristics
Reverse current
IR
nA
VR = 4 V, TA = 25 °C
-
-
10
VR = 4 V, TA = 65 °C
-
-
200
AC characteristics
Diode capacitance
CT
pF
VR = 1 V, f = 1 MHz
4.8
5.3
5.8
VR = 3 V, f = 1 MHz
1.85
2.4
3.1
Capacitance ratio
CT1/CT3
VR = 1 V, VR = 3 V, f = 1 MHz
Series resistance
1.8
2.2
2.6
Ω
rs
VR = 1 V, f = 1 GHz
Case capacitance
-
-
0.37
-
CC
f = 1 MHz
Series inductance chip to ground
Ls
Semiconductor Group
2
pF
-
0.12
-
-
2
-
nH
Feb-04-1997
BBY 53
Diode capacitance CT = f (VR)
f = 1MHz
0.6
CT
pF
0.4
0.3
0.2
0.1
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Semiconductor Group
V
VR
5.0
3
Feb-04-1997