BBY 53 Silicon Tuning Diode Preliminary data • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO's in mobile communications equipment • High ratio at low reverse voltage Type Marking Ordering Code Pin Configuration BBY 53 S7s 1 = A1 Q62702-B824 Package 2 = A2 3 = C1/C2 SOT-23 Maximum Ratings Parameter Symbol Values Unit Diode reverse voltage VR 6 V Forward current IF 20 mA Operating temperature range Top - 55 ... + 150 Storage temperature Tstg - 55 ... + 150 Semiconductor Group 1 °C Feb-04-1997 BBY 53 Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. DC characteristics Reverse current IR nA VR = 4 V, TA = 25 °C - - 10 VR = 4 V, TA = 65 °C - - 200 AC characteristics Diode capacitance CT pF VR = 1 V, f = 1 MHz 4.8 5.3 5.8 VR = 3 V, f = 1 MHz 1.85 2.4 3.1 Capacitance ratio CT1/CT3 VR = 1 V, VR = 3 V, f = 1 MHz Series resistance 1.8 2.2 2.6 Ω rs VR = 1 V, f = 1 GHz Case capacitance - - 0.37 - CC f = 1 MHz Series inductance chip to ground Ls Semiconductor Group 2 pF - 0.12 - - 2 - nH Feb-04-1997 BBY 53 Diode capacitance CT = f (VR) f = 1MHz 0.6 CT pF 0.4 0.3 0.2 0.1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Semiconductor Group V VR 5.0 3 Feb-04-1997