CLY 15 GaAs FET ________________________________________________________________________________________________________ Datasheet * Power amplifier for mobile phones * For frequencies from 400 MHz to 2.5 GHz * Operating voltage range: 2.7 to 6 V * POUT at VD=3V, f=1.8 GHz typ. 31.5 dBm * Efficiency better 50% S D S G ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code (taped) Package 1) CLY 15 CLY 15 Q62702-L99 SOT 223 Maximum ratings Symbol Unit Drain-source voltage VDS 9 V Drain-gate voltage VDG 12 V Gate-source voltage VGS -6 V ID 5 A Channel temperature TCh 150 °C Storage temperature Tstg -55...+150 °C Total power dissipation (Ts < 80°C) Ptot 4.7 W RthChS < 15 K/W Drain current Ts: Temperature at soldering point Thermal resistance Channel-soldering point (GND) 1) Dimensions see chapter Package Outlines Siemens Aktiengesellschaft pg. 1/7 09/96 HL EH PD 21 CLY 15 GaAs FET ________________________________________________________________________________________________________ Electrical characteristics (TA = 25°C , unless otherwise specified) Characteristics Drain-source saturation current *) VDS = 3V typ max Unit IDSS 2.4 3.2 4.8 A ID - - 400 µA IG - 20 70 µA VGS(p) -3.8 -2.8 -1.8 V VGS = -3.8V Gate cut-off current VDS = 3V min VGS = 0V Cut-off current VDS = 3V Symbol VGS = -3.8V Pinch-off Voltage VDS=3V ID=400µA G Small Signal Gain *) VDS = 3V ID = 1.4A f = 1.8GHz dB - 6 - Po 32 32.5 - dBm Po 34.5 35 - dBm P1dB - 31.5 - dBm P1dB - 34.5 - dBm ηD 45 50 - % Pin = 5dBm Output Power *) VDS = 3V ID = 1.4A f = 1.8GHz Pin = 29dBm Output Power *) VDS = 5V ID = 1.4A f = 1.8GHz Pin = 30 dBm 1dB-Compression Point *) VDS = 3V ID = 1.4A f = 1.8GHz 1dB-Compression Point *) VDS = 5V ID = 1.4A f = 1.8GHz Power Added Efficiency *) VDS = 3V ID = 1.4A f = 1.8GHz Pin = 29dBm *) pulsed measurement; duty cycle 1:10; ton = 1ms, power matching conditions. Siemens Aktiengesellschaft pg. 2/7 09/96 HL EH PD 21 CLY 15 GaAs FET ________________________________________________________________________________________________________ Output Charateristics VGS = 0V 3 2,5 VGS = -0.5V ID [A] 2 1,5 VGS = -1V 1 VGS = -1.5V 0,5 VGS = -2V 0 0 0,5 1 1,5 2 2,5 3 3,5 4 4,5 5 VDS [V] Power Characteristics 35 70 30 60 25 50 20 40 15 30 10 20 5 10 0 0 @ 3V/1.4A Pout PAE -5 0 5 10 15 20 25 30 Pin [dBm] 40 80 35 70 30 60 25 50 20 40 15 30 10 20 5 10 0 @ 5V/1.4A PAE [%] Pout [dBm] Power Characteristics Pout PAE 0 -5 0 5 10 15 20 25 30 35 Pin [dBm] Siemens Aktiengesellschaft pg. 3/7 09/96 HL EH PD 21 CLY 15 GaAs FET ________________________________________________________________________________________________________ typ. Common Source S-Parameter VDS = 3V ID=1.4A Zo=50Ω Ω f GHz S11 MAG ANG S21 MAG ANG S12 MAG ANG S22 MAG ANG 0.200 0.250 0.300 0.350 0.400 0.450 0.500 0.550 0.600 0.650 0.700 0.750 0.800 0.850 0.900 0.950 1.000 1.200 1.400 1.600 1.800 2.000 2.200 2.400 2.600 2.800 3.000 3.200 3.400 3.600 3.800 4.000 4.200 4.400 4.600 4.800 5.000 5.200 5.400 5.600 5.800 6.000 0.91 0.91 0.90 0.90 0.90 0.90 0.90 0.90 0.90 0.90 0.90 0.90 0.90 0.90 0.90 0.90 0.90 0.91 0.91 0.92 0.92 0.93 0.93 0.93 0.94 0.94 0.94 0.93 0.92 0.91 0.90 0.89 0.86 0.83 0.89 0.83 0.85 0.88 0.89 0.90 0.91 0.92 5.69 4.63 3.89 3.34 2.92 2.60 2.34 2.12 1.95 1.79 1.66 1.54 1.45 1.36 1.28 1.21 1.15 0.95 0.81 0.70 0.61 0.55 0.49 0.44 0.40 0.37 0.34 0.32 0.31 0.30 0.31 0.32 0.34 0.36 0.07 0.34 0.30 0.27 0.24 0.22 0.19 0.18 0.01 0.02 0.02 0.02 0.02 0.02 0.02 0.02 0.03 0.03 0.03 0.03 0.03 0.03 0.04 0.04 0.04 0.05 0.05 0.06 0.06 0.06 0.07 0.07 0.07 0.07 0.08 0.08 0.08 0.07 0.07 0.07 0.07 0.07 0.07 0.07 0.07 0.07 0.07 0.07 0.07 0.07 0.90 0.87 0.88 0.87 0.87 0.87 0.87 0.87 0.87 0.87 0.87 0.87 0.87 0.87 0.87 0.87 0.87 0.87 0.88 0.88 0.88 0.89 0.88 0.90 0.90 0.90 0.91 0.92 0.93 0.92 0.93 0.93 0.92 0.92 0.92 0.92 0.92 0.92 0.92 0.92 0.92 0.92 Siemens Aktiengesellschaft -150.9 -160.6 -167.9 -173.7 -178.7 176.9 173.0 169.5 166.1 163.1 160.0 157.2 154.6 152.0 149.3 146.9 144.5 135.2 126.7 118.5 110.6 103.2 96.3 89.3 82.8 77.0 71.3 66.0 61.6 57.3 53.1 49.2 46.4 44.7 44.2 43.7 42.2 39.4 36.5 33.1 29.6 26.4 99.7 93.5 88.7 84.6 80.9 77.5 74.6 71.4 68.7 66.1 63.5 60.9 58.6 56.1 53.8 51.5 49.0 40.3 31.8 23.8 16.3 8.7 2.1 -4.1 -10.0 -14.9 -19.6 -23.4 -26.8 -29.7 -33.1 -38.1 -44.9 -55.4 -36.2 -80.6 -92.1 -100.8 -107.8 -113.6 -118.9 -124.4 pg. 4/7 48.5 45.9 46.8 47.4 47.5 47.6 48.1 47.7 47.0 47.1 46.6 45.6 45.0 43.9 43.0 41.9 41.0 36.1 31.9 26.1 20.8 15.6 10.4 5.2 0.2 -4.2 -9.7 -15.0 -19.4 -23.7 -28.1 -31.9 -35.4 -37.5 -38.1 -39.4 -40.3 -42.5 -45.0 -48.6 -51.4 -54.4 176.0 173.8 171.8 170.8 168.8 167.3 165.8 164.2 162.8 161.2 159.7 158.3 156.9 155.6 154.0 152.6 151.3 145.8 140.1 134.7 129.7 124.3 119.1 114.4 109.3 104.5 99.8 95.1 90.8 87.0 83.1 79.8 76.4 73.4 71.0 68.2 65.2 62.2 58.7 55.7 52.1 48.0 09/96 HL EH PD 21 CLY 15 GaAs FET ________________________________________________________________________________________________________ typ. Common Source S-Parameter VDS = 5V ID=1.4A Zo=50Ω Ω f GHz S11 MAG ANG S21 MAG ANG S12 MAG ANG S22 MAG ANG 0.200 0.250 0.300 0.350 0.400 0.450 0.500 0.550 0.600 0.650 0.700 0.750 0.800 0.850 0.900 0.950 1.000 1.200 1.400 1.600 1.800 2.000 2.200 2.400 2.600 2.800 3.000 3.200 3.400 3.600 3.800 4.000 4.200 4.400 4.600 4.800 5.000 5.200 5.400 5.600 5.800 6.000 0.90 0.89 0.89 0.89 0.88 0.89 0.88 0.88 0.89 0.88 0.89 0.89 0.89 0.89 0.89 0.89 0.89 0.89 0.90 0.91 0.92 0.92 0.93 0.93 0.93 0.93 0.93 0.92 0.92 0.91 0.90 0.88 0.87 0.86 0.85 0.85 0.86 0.87 0.88 0.89 0.90 0.90 7.61 6.18 5.19 4.45 3.90 3.47 3.11 2.82 2.59 2.38 2.20 2.05 1.91 1.79 1.69 1.59 1.51 1.24 1.04 0.90 0.78 0.68 0.61 0.54 0.48 0.43 0.39 0.37 0.34 0.32 0.32 0.31 0.32 0.32 0.32 0.31 0.30 0.28 0.26 0.24 0.22 0.21 0.01 0.02 0.02 0.02 0.02 0.02 0.02 0.02 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.04 0.04 0.04 0.05 0.05 0.06 0.06 0.06 0.07 0.07 0.07 0.07 0.07 0.07 0.07 0.07 0.07 0.07 0.07 0.07 0.07 0.07 0.07 0.07 0.08 0.08 0.08 0.84 0.82 0.82 0.82 0.82 0.82 0.82 0.82 0.82 0.82 0.82 0.82 0.82 0.82 0.82 0.82 0.82 0.83 0.83 0.84 0.84 0.85 0.86 0.86 0.87 0.88 0.89 0.90 0.91 0.91 0.92 0.92 0.92 0.92 0.92 0.92 0.92 0.92 0.92 0.92 0.92 0.93 Siemens Aktiengesellschaft -151.1 -160.6 -167.8 -173.7 -178.7 177.0 173.2 169.6 166.4 163.1 160.3 157.5 154.9 152.1 149.7 147.1 144.7 135.5 127.1 119.1 111.1 103.7 96.6 89.8 83.2 77.3 71.8 66.6 61.8 57.9 54.1 50.5 47.8 45.7 43.4 42.3 40.3 37.7 35.2 32.1 29.0 26.0 98.8 92.4 87.5 83.3 79.4 75.9 72.8 69.5 66.6 63.9 61.1 58.4 55.9 53.2 50.7 48.4 45.7 36.2 27.1 18.3 10.1 2.1 -5.1 -12.0 -18.6 -24.0 -29.3 -33.5 -37.2 -40.5 -43.9 -48.3 -53.8 -60.9 -68.9 -77.5 -86.7 -94.5 -101.8 -108.4 -114.5 -121.1 pg. 5/7 46.5 43.4 46.5 46.0 46.5 47.3 47.9 47.8 47.4 47.4 46.5 45.6 45.3 44.8 43.9 42.7 42.0 37.8 32.2 27.4 22.5 18.2 12.5 7.3 2.6 -2.6 -7.2 -12.1 -16.8 -21.1 -24.9 -27.6 -31.5 -33.4 -35.4 -37.2 -39.3 -41.6 -44.0 -48.5 -50.3 -54.0 176.7 174.7 172.9 171.8 169.7 168.3 166.7 165.5 163.9 162.6 161.0 159.6 158.0 156.8 155.4 154.1 152.8 147.3 141.9 136.8 131.6 126.3 121.3 116.1 111.4 106.3 101.8 97.2 92.5 88.8 85.1 81.4 78.1 74.9 72.2 69.3 66.2 63.1 59.6 56.6 53.0 49.0 09/96 HL EH PD 21 GaAs FET CLY 15 ________________________________________________________________________________________________________ Siemens Aktiengesellschaft pg. 6/7 09/96 HL EH PD 21 GaAs FET CLY 15 ________________________________________________________________________________________________________ Siemens Aktiengesellschaft pg. 7/7 09/96 HL EH PD 21