BSP 170 SIPMOS ® Small-Signal Transistor • P channel • Enhancement mode • Avalanche rated • VGS(th) = -2.1...-4.0 V Pin 1 G Type VDS ID RDS(on) Package BSP 170 -60 V -1.7 A 0.35 Ω SOT-223 Type BSP 170 Ordering Code Q67000-S . . . Pin 2 D Pin 3 Pin 4 S D Marking Tape and Reel Information E6327 Maximum Ratings Parameter Symbol Continuous drain current ID TA = 25 °C Values Unit A -1.7 IDpuls DC drain current, pulsed TA = 25 °C -6.8 EAS Avalanche energy, single pulse mJ ID = -1.7 A, VDD = -25 V, RGS = 25 Ω L = 3.23 mH, Tj = 25 °C 8 Gate source voltage VGS Power dissipation Ptot TA = 25 °C Semiconductor Group ± 20 V W 1.8 1 22/05/1997 BSP 170 Maximum Ratings Parameter Symbol Values Unit Chip or operating temperature Tj -55 ... + 150 °C Storage temperature Tstg -55 ... + 150 Thermal resistance, chip to ambient air 1) RthJA ≤ 70 Thermal resistance, junction-soldering point 1) RthJS ≤ 10 IEC climatic category, DIN IEC 68-1 K/W 55 / 150 / 56 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain- source breakdown voltage V(BR)DSS VGS = 0 V, ID = -0.25 mA, Tj = 25 °C Gate threshold voltage -60 - - -2.1 -3 -4 VGS(th) VGS=VDS, ID = -1 mA Zero gate voltage drain current V IDSS µA VDS = -60 V, VGS = 0 V, Tj = 25 °C - -0.1 -1 VDS = -60 V, VGS = 0 V, Tj = 125 °C - -10 -100 Gate-source leakage current IGSS VGS = -20 V, VDS = 0 V Drain-Source on-state resistance - -10 -100 Ω RDS(on) VGS = -10 V, ID = -1.7 A Semiconductor Group nA - 2 0.255 0.35 22/05/1997 BSP 170 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics Transconductance gfs VDS≥ 2 * ID * RDS(on)max, ID = -1.7 A Input capacitance 1 pF - 800 1100 - 250 375 - 95 145 Crss VGS = 0 V, VDS = -25 V, f = 1 MHz Turn-on delay time - Coss VGS = 0 V, VDS = -25 V, f = 1 MHz Reverse transfer capacitance 1.35 Ciss VGS = 0 V, VDS = -25 V, f = 1 MHz Output capacitance S td(on) ns VDD = -30 V, VGS = -10 V, ID = -0.3 A RG = 50 Ω Rise time - 25 38 - 80 120 - 130 175 - 150 200 tr VDD = -30 V, VGS = -10 V, ID = -0.3 A RG = 50 Ω Turn-off delay time td(off) VDD = -30 V, VGS = -10 V, ID = 0.3 A RG = 50 Ω Fall time tf VDD = -30 V, VGS = -10 V, ID = -0.3 A RG = 50 Ω Semiconductor Group 3 22/05/1997 BSP 170 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Reverse Diode Inverse diode continuous forward current IS TA = 25 °C Inverse diode direct current,pulsed - - -6.8 V -0.9 -1.2 trr ns - 80 - Qrr VR = 30 V, IF=lS, diF/dt = 100 A/µs Semiconductor Group -1.7 - VR = 30 V, IF=lS, diF/dt = 100 A/µs Reverse recovery charge - VSD VGS = 0 V, IF = -3.4 A Reverse recovery time - ISM TA = 25 °C Inverse diode forward voltage A µC - 4 0.23 - 22/05/1997 BSP 170 Power dissipation Ptot = ƒ(TA) Drain current ID = ƒ(TA) parameter: VGS ≥ -10 V 2.0 -1.8 W Ptot A 1.6 ID -1.4 1.4 -1.2 1.2 -1.0 1.0 -0.8 0.8 -0.6 0.6 -0.4 0.4 -0.2 0.2 0.0 0.0 0 20 40 60 80 100 120 °C 160 0 20 40 60 80 100 TA 120 °C 160 TA Safe operating area ID=f(VDS) Transient thermal impedance Zth JA = ƒ(tp) parameter: D = tp / T parameter : D = 0, TC=25°C 10 2 K/W 10 1 ZthJC 10 0 10 -1 D = 0.50 10 -2 0.20 0.10 10 -3 0.05 single pulse 10 -4 0.02 0.01 10 -5 -8 -7 -6 -5 -4 -3 -2 -1 0 10 10 10 10 10 10 10 10 s 10 tp Semiconductor Group 5 22/05/1997 BSP 170 Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs , Tj = 25 °C -3.8 Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: tp = 80 µs, Tj = 25 °C 1.1 l Ptot = 2W j ki h g A f a Ω -3.2 VGS [V] a -4.0 ID e -2.8 -2.4 d -2.0 -1.6 c -1.2 b -4.5 c -5.0 d -5.5 e -6.0 f -6.5 g -7.0 h -7.5 i -8.0 j -9.0 k -10.0 l -0.8 RDS (on) b c d 0.9 0.8 0.7 0.6 0.5 e 0.4 f g h k i j 0.3 -20.0 b 0.2 VGS [V] = -0.4 a a b c d e f -4.5 -5.0 -5.5 -6.0 -6.5 -7.0 -4.0 0.1 0.0 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 V 0.0 0.0 -5.0 -0.4 -0.8 -1.2 -1.6 g h i j k -7.5 -8.0 -9.0 -10.0 -20.0 -2.0 -2.4 A VDS -3.2 ID Typ. transfer characteristics ID = f(VGS) parameter: tp = 80 µs VDS≥ 2 x ID x RDS(on)max Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs, VDS≥2 x ID x RDS(on)max -10 3.0 S A 2.6 ID -8 gfs 2.4 2.2 -7 2.0 -6 1.8 1.6 -5 1.4 -4 1.2 1.0 -3 0.8 -2 0.6 0.4 -1 0 0 0.2 0.0 -1 -2 -3 Semiconductor Group -4 -5 -6 -7 -8 V VGS -10 0 -1 -2 -3 -4 -5 -6 -7 -8 A -10 ID 6 22/05/1997 BSP 170 Drain-source on-resistance RDS (on) = ƒ(Tj) parameter: ID = -1.7 A, VGS = -10 V Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = -1 mA 0.9 -4.6 Ω V 98% -4.0 RDS (on) 0.7 VGS(th) -3.6 typ -3.2 0.6 -2.8 0.5 -2.4 98% 0.4 2% -2.0 typ -1.6 0.3 -1.2 0.2 -0.8 0.1 -0.4 0.0 -60 -20 20 60 100 °C 0.0 -60 160 -20 20 60 100 Tj °C 160 Tj Typ. capacitances C = f (VDS) parameter:VGS=0V, f = 1 MHz Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj, tp = 80 µs 10 4 -10 1 pF A IF C 10 3 -10 0 Ciss Coss 10 2 -10 -1 Crss Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 1 0 -5 -10 Semiconductor Group -15 -20 -25 -30 V VDS -40 -10 -2 0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 V -3.0 VSD 7 22/05/1997 BSP 170 Avalanche energy EAS = ƒ(Tj) parameter: ID = -1.7 A, VDD = -25 V RGS = 25 Ω, L = 3.23 mH Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) 9 -71 V mJ EAS -68 V(BR)DSS 7 -66 6 -64 5 -62 4 -60 3 2 -58 1 -56 0 20 40 60 80 100 120 °C 160 Tj Semiconductor Group -54 -60 -20 20 60 100 °C 160 Tj 8 22/05/1997