Transistor 2SC1047 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm ■ Features ● Optimum for RF amplification of FM/AM radios. High transition frequency fT. 13.5±0.5 ● 4.0±0.2 5.1±0.2 5.0±0.2 (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 3 V Collector current IC 20 mA Collector power dissipation PC 400 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics +0.2 +0.2 0.45 –0.1 0.45 –0.1 1.27 1.27 2.3±0.2 ■ Absolute Maximum Ratings 1 2 3 2.54±0.15 1:Emitter 2:Collector 3:Base JEDEC:TO–92 EIAJ:SC–43A (Ta=25˚C) Parameter Symbol Conditions min typ max Unit Collector to base voltage VCBO IC = 10µA, IE = 0 30 V Emitter to base voltage VEBO IE = 10µA, IC = 0 3 V Forward current transfer ratio hFE * VCB = 6V, IE = –1mA 40 Base to emitter voltage VBE VCB = 6V, IE = –1mA Common emitter reverse transfer capacitance Cre VCE = 6V, IC = 1mA, f = 10.7MHz Transition frequency fT VCB = 6V, IE = –1mA, f = 200MHz 450 Power gain PG VCB = 6V, IE = –1mA, f = 100MHz 20 Noise figure NF VCB = 6V, IE = –1mA, f = 100MHz *h FE 260 V 0.72 0.8 1 650 pF MHz dB 3.3 5 dB Rank classification Rank B C D hFE 40 ~ 110 65 ~ 160 100 ~ 260 1 Transistor 2SC1047 PC — Ta IC — VCE 12 Ta=25˚C 450 300 250 200 150 100 80µA 8 60µA 6 40µA 4 20µA 2 6V 8 6 4 2 0 60 80 100 120 140 160 0 0 6 Collector to emitter saturation voltage VCE(sat) (V) VCE=6V 25˚C –25˚C 20 15 10 5 0 0 0.4 0.8 1.2 1.6 2.0 30 10 3 1 0.3 Ta=75˚C 25˚C 0.1 –25˚C 0.03 0.01 0.1 0.3 1 3 fT — IE 10 30 Reverse transfer impedance Zrb (Ω) VCB=10V 800 6V 600 400 200 –3 –10 300 240 Ta=75˚C 180 25˚C –25˚C 120 60 0 0.1 0.3 –30 Emitter current IE (mA) –100 100 80 60 40 VCE=6V 10V 0 – 0.1 – 0.3 –1 3 10 30 100 Cre — VCE f=2MHz Ta=25˚C 20 1 Collector current IC (mA) Zrb — IE 1000 180 VCE=6V 100 120 Ta=25˚C 120 360 IC/IB=10 Collector current IC (mA) 1200 –1 60 Base current IB (µA) hFE — IC 100 Base to emitter voltage VBE (V) 0 – 0.1 – 0.3 0 VCE(sat) — IC 30 Ta=75˚C 18 Collector to emitter voltage VCE (V) IC — VBE 25 12 Forward current transfer ratio hFE 40 –3 Emitter current IE (mA) –10 Common emitter reverse transfer capacitance Cre (pF) 20 Ambient temperature Ta (˚C) Collector current IC (mA) VCE=10V 50 0 Transition frequency fT (MHz) 10 Collector current IC (mA) 350 Ta=25˚C IB=100µA 10 400 0 2 IC — I B 12 Collector current IC (mA) Collector power dissipation PC (mW) 500 2.4 IC=1mA f=10.7MHz Ta=25˚C 2.0 1.6 1.2 0.8 0.4 0 0.1 0.3 1 3 10 30 100 Collector to emitter voltage VCE (V) Transistor 2SC1047 Cob — VCB PG — IE 0.8 0.6 0.4 12 f=100MHz Rg=50Ω Ta=25˚C 35 30 VCE=10V 25 6V 20 15 10 8 6 4 0.2 VCE=6V, 10V 2 5 0 5 10 15 20 25 0 – 0.1 – 0.3 30 Collector to base voltage VCB (V) yie=gie+jbie VCE=10V –7mA 100 –2mA 14 100 12 58 10 IE=– 0.5mA –1mA 8 6 58 25 4 25 2 f=10.7MHz 0 0 3 6 9 –30 0 – 0.1 – 0.3 –100 –1 12 15 Input conductance gie (mS) 0 10.7 25 yre=gre+jbre VCE=10V –1 –1mA –4mA IE=–7mA –2 58 –3 100 –4 –5 –6 – 0.5 –3 –10 –30 –100 Emitter current IE (mA) bfe — gfe 0 150 –4mA 16 –10 bre — gre Reverse transfer susceptance bre (mS) 18 –3 Emitter current IE (mA) bie — gie 20 –1 Forward transfer susceptance bfe (mS) 0 Input susceptance bie (mS) f=100MHz Rg=50Ω Ta=25˚C 10 Noise figure NF (dB) IE=0 f=1MHz Ta=25˚C 1.0 NF — IE 40 Power gain PG (dB) Collector output capacitance Cob (pF) 1.2 10.7 – 0.4mA –1mA 25 58 100 –20 150 –2mA –40 –4mA 150 100 58 f=15MHz –60 IE=–7mA 100 –80 –100 f=150MHz – 0.4 – 0.3 – 0.2 – 0.1 yfe=gfe+jbfe VCE=10V –120 0 Reverse transfer conductance gre (mS) 0 20 40 60 80 Forward transfer conductance 100 gfe (mS) boe — goe IE=– 0.5mA –1mA Output susceptance boe (mS) 1.2 1.0 150 –2mA –4mA 100 0.8 –7mA 0.6 58 0.4 25 0.2 yoe=goe+jboe VCE=10V f=10.7MHz 0 0 0.1 0.2 0.3 0.4 0.5 Output conductance goe (mS) 3