PANASONIC 2SC1047

Transistor
2SC1047
Silicon NPN epitaxial planer type
For high-frequency amplification
Unit: mm
■ Features
●
Optimum for RF amplification of FM/AM radios.
High transition frequency fT.
13.5±0.5
●
4.0±0.2
5.1±0.2
5.0±0.2
(Ta=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
30
V
Collector to emitter voltage
VCEO
20
V
Emitter to base voltage
VEBO
3
V
Collector current
IC
20
mA
Collector power dissipation
PC
400
mW
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
–55 ~ +150
˚C
■ Electrical Characteristics
+0.2
+0.2
0.45 –0.1
0.45 –0.1
1.27
1.27
2.3±0.2
■ Absolute Maximum Ratings
1 2 3
2.54±0.15
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
(Ta=25˚C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector to base voltage
VCBO
IC = 10µA, IE = 0
30
V
Emitter to base voltage
VEBO
IE = 10µA, IC = 0
3
V
Forward current transfer ratio
hFE
*
VCB = 6V, IE = –1mA
40
Base to emitter voltage
VBE
VCB = 6V, IE = –1mA
Common emitter reverse transfer capacitance
Cre
VCE = 6V, IC = 1mA, f = 10.7MHz
Transition frequency
fT
VCB = 6V, IE = –1mA, f = 200MHz
450
Power gain
PG
VCB = 6V, IE = –1mA, f = 100MHz
20
Noise figure
NF
VCB = 6V, IE = –1mA, f = 100MHz
*h
FE
260
V
0.72
0.8
1
650
pF
MHz
dB
3.3
5
dB
Rank classification
Rank
B
C
D
hFE
40 ~ 110
65 ~ 160
100 ~ 260
1
Transistor
2SC1047
PC — Ta
IC — VCE
12
Ta=25˚C
450
300
250
200
150
100
80µA
8
60µA
6
40µA
4
20µA
2
6V
8
6
4
2
0
60
80 100 120 140 160
0
0
6
Collector to emitter saturation voltage VCE(sat) (V)
VCE=6V
25˚C
–25˚C
20
15
10
5
0
0
0.4
0.8
1.2
1.6
2.0
30
10
3
1
0.3
Ta=75˚C
25˚C
0.1
–25˚C
0.03
0.01
0.1
0.3
1
3
fT — IE
10
30
Reverse transfer impedance Zrb (Ω)
VCB=10V
800
6V
600
400
200
–3
–10
300
240
Ta=75˚C
180
25˚C
–25˚C
120
60
0
0.1
0.3
–30
Emitter current IE (mA)
–100
100
80
60
40
VCE=6V
10V
0
– 0.1
– 0.3
–1
3
10
30
100
Cre — VCE
f=2MHz
Ta=25˚C
20
1
Collector current IC (mA)
Zrb — IE
1000
180
VCE=6V
100
120
Ta=25˚C
120
360
IC/IB=10
Collector current IC (mA)
1200
–1
60
Base current IB (µA)
hFE — IC
100
Base to emitter voltage VBE (V)
0
– 0.1 – 0.3
0
VCE(sat) — IC
30
Ta=75˚C
18
Collector to emitter voltage VCE (V)
IC — VBE
25
12
Forward current transfer ratio hFE
40
–3
Emitter current IE (mA)
–10
Common emitter reverse transfer capacitance Cre (pF)
20
Ambient temperature Ta (˚C)
Collector current IC (mA)
VCE=10V
50
0
Transition frequency fT (MHz)
10
Collector current IC (mA)
350
Ta=25˚C
IB=100µA
10
400
0
2
IC — I B
12
Collector current IC (mA)
Collector power dissipation PC (mW)
500
2.4
IC=1mA
f=10.7MHz
Ta=25˚C
2.0
1.6
1.2
0.8
0.4
0
0.1
0.3
1
3
10
30
100
Collector to emitter voltage VCE (V)
Transistor
2SC1047
Cob — VCB
PG — IE
0.8
0.6
0.4
12
f=100MHz
Rg=50Ω
Ta=25˚C
35
30
VCE=10V
25
6V
20
15
10
8
6
4
0.2
VCE=6V, 10V
2
5
0
5
10
15
20
25
0
– 0.1 – 0.3
30
Collector to base voltage VCB (V)
yie=gie+jbie
VCE=10V
–7mA
100
–2mA
14
100
12
58
10
IE=– 0.5mA
–1mA
8
6
58
25
4
25
2
f=10.7MHz
0
0
3
6
9
–30
0
– 0.1 – 0.3
–100
–1
12
15
Input conductance gie (mS)
0
10.7
25
yre=gre+jbre
VCE=10V
–1
–1mA
–4mA
IE=–7mA
–2
58
–3
100
–4
–5
–6
– 0.5
–3
–10
–30
–100
Emitter current IE (mA)
bfe — gfe
0
150
–4mA
16
–10
bre — gre
Reverse transfer susceptance bre (mS)
18
–3
Emitter current IE (mA)
bie — gie
20
–1
Forward transfer susceptance bfe (mS)
0
Input susceptance bie (mS)
f=100MHz
Rg=50Ω
Ta=25˚C
10
Noise figure NF (dB)
IE=0
f=1MHz
Ta=25˚C
1.0
NF — IE
40
Power gain PG (dB)
Collector output capacitance Cob (pF)
1.2
10.7
– 0.4mA
–1mA
25
58
100
–20
150
–2mA
–40
–4mA
150
100
58
f=15MHz
–60
IE=–7mA
100
–80
–100
f=150MHz
– 0.4
– 0.3
– 0.2
– 0.1
yfe=gfe+jbfe
VCE=10V
–120
0
Reverse transfer conductance gre (mS)
0
20
40
60
80
Forward transfer conductance
100
gfe (mS)
boe — goe
IE=– 0.5mA
–1mA
Output susceptance boe (mS)
1.2
1.0
150
–2mA
–4mA
100
0.8
–7mA
0.6
58
0.4
25
0.2
yoe=goe+jboe
VCE=10V
f=10.7MHz
0
0
0.1
0.2
0.3
0.4
0.5
Output conductance goe (mS)
3