Power Transistors 2SD1257, 2SD1257A Silicon NPN epitaxial planar type For power switching Complementary to 2SB934 80 VCEO emitter voltage 2SD1257A 100 V Emitter to base voltage VEBO 7 V Peak collector current ICP 15 A Collector current IC 7 A Collector power TC=25°C dissipation Junction temperature Tj Storage temperature Tstg 150 ˚C –55 to +150 ˚C Symbol VCB = 100V, IE = 0 Emitter cutoff current IEBO VEB = 5V, IC = 0 2SD1257A Forward current transfer ratio 10.0±0.3 1.5±0.1 1 2 min 0 to 0.4 1:Base 2:Collector 3:Emitter N Type Package (DS) 3 hFE1 VCE = 2V, IC = 0.1A 45 VCE = 2V, IC = 3A 60 hFE2 * IC = 5A, IB = 0.25A Base to emitter saturation voltage VBE(sat) IC = 5A, IB = 0.25A Transition frequency fT VCE = 10V, IC = 0.5A, f = 10MHz Turn-on time ton Storage time tstg Fall time tf IC = 3A, IB1 = 0.3A, IB2 = – 0.3A, VCC = 50V typ max Unit 10 µA 50 µA 80 IC = 10mA, IB = 0 VCE(sat) FE2 R0.5 R0.5 5.08±0.5 VCEO Collector to emitter saturation voltage *h 2.0 10.5min. Conditions ICBO voltage 1.0±0.1 (TC=25˚C) Parameter 2SD1257 6.0±0.3 0.8±0.1 W Collector cutoff current Collector to emitter 3.4±0.3 1.1 max. 1.3 ■ Electrical Characteristics 8.5±0.2 2.54±0.3 40 PC Ta=25°C Unit: mm V 14.7±0.5 150 Unit +0.4 2SD1257 VCBO 1:Base 2:Collector 3:Emitter N Type Package 3 3.0–0.2 Collector to 130 2 4.4±0.5 2SD1257A Ratings 1 +0 base voltage 0.5max. 2.54±0.3 (TC=25˚C) Symbol 2SD1257 0.8±0.1 1.5–0.4 Parameter 1.1max. 5.08±0.5 ■ Absolute Maximum Ratings Collector to 1.5max. 10.0±0.3 ● 1.0±0.1 2.0 ● Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 4.4±0.5 ● Unit: mm 6.0±0.5 ■ Features ● 3.4±0.3 8.5±0.2 V 100 260 0.5 1.5 V V 30 MHz 0.5 µs 1.5 µs 0.1 µs Rank classification Rank R Q P hFE2 60 to 120 90 to 180 130 to 260 1 Power Transistors 2SD1257, 2SD1257A IC — VCE (1) TC=Ta (2) With a 50 × 50 × 2mm Al heat sink (3) Without heat sink (PC=1.3W) (1) 40 30 20 TC=25˚C Collector current IC (A) Collector power dissipation PC (W) VCE(sat) — IC 10 10 8 IB=55mA 50mA 45mA 40mA 6 35mA 30mA 4 20mA 15mA 2 10mA (2) 5mA (3) 0 0 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 2 6 8 3 1 (2) (1) 0.3 0.1 0.03 0.01 0.01 0.03 0.1 0.3 1 3 Collector current IC (A) VBE(sat) — IC VBE(sat) — IC 10 3 1 TC=100˚C 0.3 25˚C 0.1 –25˚C 0.03 0.01 0.01 0.03 0.1 0.3 1 3 (1) IC/IB=10 (2) IC/IB=20 TC=25˚C 10 3 (1) (2) 1 0.3 0.1 0.03 0.01 0.1 10 Base to emitter saturation voltage VBE(sat) (V) IC/IB=20 30 Base to emitter saturation voltage VBE(sat) (V) 100 0.3 1 3 10 hFE — IC TC=–25˚C 1 100˚C 0.3 25˚C 0.1 0.03 Transition frequency fT (MHz) Collector output capacitance Cob (pF) VCE=10V f=10MHz TC=25˚C TC=100˚C 25˚C 100 –25˚C 30 10 3 3 Collector current IC (A) 10 3 10 IE=0 f=1MHz TC=25˚C 1000 300 100 30 10 3 1 1 3000 1000 300 0.3 Cob — VCB 3000 1000 0.1 Collector current IC (A) 10000 VCE=2V 0.3 3 fT — IC 3000 0.1 10 0.01 0.01 0.03 30 10000 1 0.01 0.03 IC/IB=20 30 Collector current IC (A) 10000 Forward current transfer ratio hFE 12 100 Collector current IC (A) 2 10 (1) IC/IB=10 (2) IC/IB=20 TC=25˚C 10 Collector to emitter voltage VCE (V) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) 4 Collector to emitter saturation voltage VCE(sat) (V) PC — Ta 50 1 0.01 0.03 0.1 0.3 1 3 Collector current IC (A) 10 300 100 30 10 3 1 0.1 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Power Transistors 2SD1257, 2SD1257A ton, tstg, tf — IC Pulsed tw=1ms Duty cycle=1% IC/IB=10(IB1=–IB2) VCC=50V TC=25˚C 3 tstg 1 ton 0.3 tf 0.1 ICP t=0.5ms 10 IC 3 10ms 300ms 1 1ms 0.3 0.1 0.03 2SD1257 10 Non repetitive pulse TC=25˚C 30 Collector current IC (A) 30 Switching time ton,tstg,tf (µs) Area of safe operation (ASO) 100 0.03 0.01 0.01 0 1 2 3 4 5 6 7 8 1 Collector current IC (A) 3 10 30 2SD1257A 100 100 300 1000 Collector to emitter voltage VCE (V) Rth(t) — t Thermal resistance Rth(t) (˚C/W) 103 (1) Without heat sink (2) With a 50 × 50 × 2mm Al heat sink (1) 102 (2) 10 1 10–1 10–2 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3