PANASONIC 2SJ164

Silicon Junction FETs (Small Signal)
2SJ0164 (2SJ164)
Silicon P-Channel Junction FET
For switching
Complementary to 2SK1104
unit: mm
4.0±0.2
(0.8)
3.0±0.2
2.0±0.2
● Low ON-resistance
● Low-noise characteristics
7.6
■ Features
15.6±0.5
■ Absolute Maximum Ratings (Ta = 25°C)
Parameter
Symbol
(0.8)
0.75 max.
Ratings
Unit
Gate to Drain voltage
VGDS
65
V
Drain current
ID
−20
mA
Gate current
IG
−10
mA
Allowable power dissipation
PD
300
mW
Channel temperature
Tch
150
°C
Storage temperature
Tstg
−55 to +150
°C
0.45+0.20
–0.10
0.45+0.20
–0.10
(2.5) (2.5)
0.7±0.1
1
2
1: Source
2: Gate
3: Drain
NS-B1 Package
3
■ Electrical Characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Drain to Source cut-off current
IDSS*
VDS = −10V, VGS = 0
Gate to Source leakage current
IGSS
VGS = 30V, VDS = 0
Gate to Drain voltage
VGDS
IG = 10µA, VDS = 0
Gate to Source cut-off voltage
VGSC
VDS = −10V, ID = −10µA
Forward transfer admittance
| Yfs |
VDS = −10V, ID = −1mA, f = 1kHz
Drain to Source ON-resistance
RDS(on)
VDS = −10mV, VGS = 0
Input capacitance (Common Source) Ciss
Output capacitance (Common Source)
Coss
VDS = −10V, VGS = 0, f = 1MHz
Reverse transfer capacitance (Common Source) Crss
*
min
typ
− 0.2
max
Unit
−6
mA
10
nA
65
V
1.5
1.8
2.5
3.5
V
mS
300
Ω
10
pF
3
pF
3
pF
IDSS rank classification
Runk
O
P
Q
R
IDSS (mA)
− 0.2 to −1
− 0.6 to −1.5
−1 to −3
−2.5 to −6
Note) The part number in the parenthesis shows conventional part number.
237
Silicon Junction FETs (Small Signal)
PD  Ta
ID  VDS
ID  VGS
–4.0
–3.0
VDS=–10V
Ta=25˚C
Ta=25˚C
175
–3.5
150
125
100
75
50
–3.0
–2.5
VGS=0V
–2.0
–1.5
0.2V
–1.0
0.4V
0.6V
25
– 0.5
0
–2.0
–1.5
–1.0
– 0.5
0.8V
0
20
40
60
80 100 120 140 160
0
0
Ambient temperature Ta (˚C)
–2
–4
–6
–8
–10
–12
| Yfs |  VGS
Forward transfer admittance |Yfs| (mS)
3.0
2.5
2.0
1.5
1.0
0.5
0
2.0
VDS=–10V
f=1kHz
Ta=25˚C
14
12
10
8
6
4
2
0
1.5
1.0
0.5
0
Gate to source voltage VGS (V)
0
–2
–4
–6
–8
2
3
4
5
Ciss, Coss, Crss  VDS
16
VDS=–10V
f=1kHz
Ta=25˚C
1
Gate to source voltage VGS (V)
| Yfs |  ID
4.0
3.5
0
Drain to source voltage VDS (V)
–10
Drain current ID (mA)
–12
Input capacitance (Common source), Output capacitance (Common source),
Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF)
0
238
Drain current ID (mA)
–2.5
Drain current ID (mA)
Allowable power dissipation PD (mW)
200
Forward transfer admittance |Yfs| (mS)
2SJ0164
24
f=1MHz
VGS=0
Ta=25˚C
20
16
Ciss
12
8
4
Coss
Crss
0
–1
–3
–10
–30
–100
Drain to source voltage VDS (V)
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2001 MAR