Silicon Junction FETs (Small Signal) 2SJ0164 (2SJ164) Silicon P-Channel Junction FET For switching Complementary to 2SK1104 unit: mm 4.0±0.2 (0.8) 3.0±0.2 2.0±0.2 ● Low ON-resistance ● Low-noise characteristics 7.6 ■ Features 15.6±0.5 ■ Absolute Maximum Ratings (Ta = 25°C) Parameter Symbol (0.8) 0.75 max. Ratings Unit Gate to Drain voltage VGDS 65 V Drain current ID −20 mA Gate current IG −10 mA Allowable power dissipation PD 300 mW Channel temperature Tch 150 °C Storage temperature Tstg −55 to +150 °C 0.45+0.20 –0.10 0.45+0.20 –0.10 (2.5) (2.5) 0.7±0.1 1 2 1: Source 2: Gate 3: Drain NS-B1 Package 3 ■ Electrical Characteristics (Ta = 25°C) Parameter Symbol Conditions Drain to Source cut-off current IDSS* VDS = −10V, VGS = 0 Gate to Source leakage current IGSS VGS = 30V, VDS = 0 Gate to Drain voltage VGDS IG = 10µA, VDS = 0 Gate to Source cut-off voltage VGSC VDS = −10V, ID = −10µA Forward transfer admittance | Yfs | VDS = −10V, ID = −1mA, f = 1kHz Drain to Source ON-resistance RDS(on) VDS = −10mV, VGS = 0 Input capacitance (Common Source) Ciss Output capacitance (Common Source) Coss VDS = −10V, VGS = 0, f = 1MHz Reverse transfer capacitance (Common Source) Crss * min typ − 0.2 max Unit −6 mA 10 nA 65 V 1.5 1.8 2.5 3.5 V mS 300 Ω 10 pF 3 pF 3 pF IDSS rank classification Runk O P Q R IDSS (mA) − 0.2 to −1 − 0.6 to −1.5 −1 to −3 −2.5 to −6 Note) The part number in the parenthesis shows conventional part number. 237 Silicon Junction FETs (Small Signal) PD Ta ID VDS ID VGS –4.0 –3.0 VDS=–10V Ta=25˚C Ta=25˚C 175 –3.5 150 125 100 75 50 –3.0 –2.5 VGS=0V –2.0 –1.5 0.2V –1.0 0.4V 0.6V 25 – 0.5 0 –2.0 –1.5 –1.0 – 0.5 0.8V 0 20 40 60 80 100 120 140 160 0 0 Ambient temperature Ta (˚C) –2 –4 –6 –8 –10 –12 | Yfs | VGS Forward transfer admittance |Yfs| (mS) 3.0 2.5 2.0 1.5 1.0 0.5 0 2.0 VDS=–10V f=1kHz Ta=25˚C 14 12 10 8 6 4 2 0 1.5 1.0 0.5 0 Gate to source voltage VGS (V) 0 –2 –4 –6 –8 2 3 4 5 Ciss, Coss, Crss VDS 16 VDS=–10V f=1kHz Ta=25˚C 1 Gate to source voltage VGS (V) | Yfs | ID 4.0 3.5 0 Drain to source voltage VDS (V) –10 Drain current ID (mA) –12 Input capacitance (Common source), Output capacitance (Common source), Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF) 0 238 Drain current ID (mA) –2.5 Drain current ID (mA) Allowable power dissipation PD (mW) 200 Forward transfer admittance |Yfs| (mS) 2SJ0164 24 f=1MHz VGS=0 Ta=25˚C 20 16 Ciss 12 8 4 Coss Crss 0 –1 –3 –10 –30 –100 Drain to source voltage VDS (V) Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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