Power F-MOS FETs 2SK3027 (Tentative) Silicon N-Channel Power F-MOS FET ■ Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage unit: mm 4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2 +0.5 13.7–0.2 ■ Absolute Maximum Ratings (TC = 25°C) Parameter Symbol Unit Drain to Source breakdown voltage VDSS 60 V Gate to Source voltage VGSS ±20 V DC ID ±50 A Pulse IDP ±100 A EAS* 125 mJ Drain current Avalanche energy capacity * Ratings Allowable power TC = 25°C dissipation Ta = 25°C 2.6±0.1 1.2±0.15 1.45±0.15 0.7±0.1 0.75±0.1 2.54±0.2 5.08±0.4 7 1 2 3 1: Gate 2: Drain 3: Source TO-220E Package (a) Internal Connection 60 PD 3.0±0.2 ● Contactless relay ● Diving circuit for a solenoid ● Driving circuit for a motor ● Control equipment ● Switching power supply 4.1±0.2 8.0±0.2 Solder Dip 15.0±0.3 ■ Applications W 2 Channel temperature Tch 150 °C Storage temperature Tstg −55 to +150 °C D G S L = 0.1mH, IL = 50A, 1 pulse ■ Electrical Characteristics (TC = 25°C) Parameter Symbol Conditions min Drain to Source cut-off current IDSS Gate to Source leakage current IGSS VGS = ±20V, VDS = 0 Drain to Source breakdown voltage VDSS ID = 1mA, VGS = 0 60 Gate threshold voltage Vth VDS = 10V, ID = 1mA 1 RDS(on)1 VGS = 10V, ID = 25A Drain to Source ON-resistance RDS(on)2 VGS = 4V, ID = 25A Forward transfer admittance | Yfs | VDS = 10V, ID = 25A Diode forward voltage VDSF IDR = 25A, VGS = 0 Input capacitance (Common Source) Ciss Output capacitance (Common Source) Coss typ VDS = 50V, VGS = 0 VDS = 10V, VGS = 0, f = 1MHz Reverse transfer capacitance (Common Source) Crss 25 max Unit 10 µA ±10 µA V 2.5 V 8 12 mΩ 11 17 mΩ 49 S −1.2 V 3600 pF 1250 pF 680 pF Turn-on time (delay time) td(on) 20 ns Rise time tr VDD = 30V, ID = 25A 65 ns Fall time tf VGS = 10V, RL = 1.2Ω 250 ns Turn-off time (delay time) td(off) 960 ns Thermal resistance between channel and case Rth(ch-c) 2.08 °C/W Thermal resistance between channel and atmosphere Rth(ch-a) 62.5 °C/W 1 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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