ETC XN01872(XN1872)

Composite Transistors
XN01872 (XN1872)
Silicon N-channel • Enhancement MOS FET
Unit: mm
For switching
+0.2
2.8 -0.3
+0.25
0.65±0.15
1.45±0.1
3
0.65±0.15
1
2
0 to 0.1
2SK0621(2SK621) × 2 elements
+0.1
+0.2
1.1 -0.1
●
0.8
■ Basic Part Number of Element
0.16 -0.06
+0.1
0.3 -0.05
0.95
+0.2
4
0.95
●
Two elements incorporated into one package.
(Source-coupled FETs)
Reduction of the mounting area and assembly cost by one half.
2.9 -0.05
●
5
1.9±0.1
■
Features
1.5 -0.05
■ Absolute Maximum Ratings
Parameter
(Ta=25˚C)
Symbol
Ratings
Unit
Drain to source voltage
VDSS
50
V
Rating Gate to source voltage
of
element
Drain current
VGSO
8
V
ID
100
mA
IDM
200
mA
Total power dissipation
PT
300
mW
Overall Channel temperature
Tch
150
˚C
Storage temperature
Tstg
–55 to +150
˚C
1 : Drain (Tr1)
2 : Drain (Tr2)
3 : Gate (Tr2)
Parameter
Drain to source voltage
0.4±0.2
4 : Source
5 : Gate (Tr1)
EIAJ : SC–74A
Mini Type Pakage (5–pin)
Marking Symbol: 5U
Internal Connection
5
FET 1
1
4
3
■ Electrical Characteristics
0.1 to 0.3
FET 2
2
(Ta=25˚C)
Symbol
Conditions
VDSS
ID = 100µA, VGS = 0
min
typ
max
50
Unit
V
Drain current
IDSS
VDS = 10V, VGS = 0
10
µA
Gate cutoff current
IGSS
VGS = 8V, VDS = 0
40
80
µA
1.5
3.5
V
50
Ω
Gate threshold voltage
Vth
ID = 100µA, VDS = VGS
Drain resistance
RDS(on)
ID = 20mA, VGS = 5V
Forward transfer admittance
| Yfs |
ID = 20mA, VDS = 5V, f = 1kHz
20
Output voltage high level
VOH
VDS = 5V, VGS = 1V, RL = 200Ω
4.5
VDS = 5V, VGS = 5V, RL = 200Ω
Output voltage low level
VOL
Input resistance
R1+R2*1
Turn-on time
ton*2
Turn-off time
toff*2
Common source short-circuit input capacitance
Ciss
VDS = 5V, VGS = 0, f = 1MHz
*1
Pulse measurement
*2
Resistance ratio R1/R2 = 1/50
30
mS
V
1.0
V
200
kΩ
VDD = 5V, VGS = 0 to 5V, RL = 200Ω
1.0
µs
VDD = 5V, VGS = 5 to 0V, RL = 200Ω
1.0
µs
15
pF
100
9
Note.) The Part number in the Parenthesis shows conventional part number.
1
Composite Transistors
XN01872
PT — Ta
ID — VDS
500
ID — VGS
120
120
VDS=5V
300
200
100
100
VGS=6.0V
80
5.5V
5.0V
60
4.5V
40
4.0V
Drain current ID (mA)
100
400
Drain current ID (mA)
Total power dissipation PT (mW)
Ta=25˚C
3.5V
20
80
Ta=–25˚C
25˚C
60
75˚C
40
20
3.0V
0
40
80
120
0
160
0
0
Ambient temperature Ta (˚C)
Common source short-circuit input capacitance,
Ciss, Coss (pF)
Common source short-circuit output capacitance
Forward transfer admittance |Yfs| (mS)
40
30
20
10
0
2
4
6
8
10
Drain to source voltage VDS (V)
VIN — IO
1000
VO=1V
Ta=25˚C
Input voltage VIN (V)
300
100
30
10
3
1
0.3
0.1
0.1
0.3
1
3
10
30
Output current IO (mA)
2
6
8
10
0
100
12
6
8
10
RDS(ON) — VGS
ID=20mA
Ciss
8
6
4
Coss
2
0
0.1
4
120
VGS=0
f=1MHz
Ta=25˚C
10
2
Gate to source voltage VGS (V)
Ciss, Coss — VDS
VDS=5V
Ta=25˚C
0
4
Drain to source voltage VDS (V)
| Yfs | — VDS
50
2
Drain resistance RDS(on) (Ω)
0
100
80
60
Ta=75˚C
40
25˚C
–25˚C
20
0
0.3
1
3
10
30
100
Drain to source voltage VDS (V)
0
2
4
6
8
Gate to source voltage VGS (V)
10
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2001 MAR