Power Transistor Arrays (F-MOS FETs) PUB4753 (PU7457) Silicon N-Channel Power F-MOS FET (with built-in zener diode) ■ Features ● High avalanche energy capacity ● High electrostatic breakdown voltage ● No secondary breakdown ● High breakdown voltage, large allowable power dissipation ● Allowing Low-voltage drive * 0.5±0.15 2.54±0.2 C 1.5±0.5 Symbol Ratings Unit Drain to Source breakdown voltage VDSS 100 ± 15 V Gate to Source voltage VGSS ±20 V DC ID ±3 A Pulse IDP ±9 A Avalanche energy capacity Non repetition EAS* 22.5 mJ Allowable power TC = 25°C dissipation Ta = 25°C Drain current 0.5±0.15 1.0±0.25 9 × 2.54 = 22.86±0.25 ■ Absolute Maximum Ratings (TC = 25°C) Parameter 0.8±0.25 1.65±0.2 Solder Dip 5.3±0.5 4.4±0.5 ● Contactless relay ● Diving circuit for a solenoid ● Driving circuit for a motor ● Control equipment ● Switching power supply 4.0±0.2 8.0±0.2 25.3±0.2 9.5±0.2 ■ Applications unit: mm 15 PD 1 2 3 4 5 6 7 8 9 10 G: Gate D: Drain S: Source SIP10-A1 Package Internal Connection W 3.5 Channel temperature Tch 150 °C Storage temperature Tstg −55 to +150 °C 3 5 4 7 6 9 8 2 1 10 L = 5mH, IL = 3A, 1 pulse ■ Electrical Characteristics (TC = 25°C) Parameter Symbol Conditions min Drain to Source cut-off current IDSS Gate to Source leakage current IGSS VGS = ±20V, VDS = 0 Drain to Source breakdown voltage VDSS ID = 1mA, VGS = 0 85 Gate threshold voltage Vth VDS = 10V, ID = 1mA 1 RDS(on)1 VGS = 10V, ID = 2A Drain to Source ON-resistance RDS(on)2 VGS = 4V, ID = 2A Forward transfer admittance | Yfs | VDS = 10V, ID = 2A Diode forward voltage VDSF IDR = 3A, VGS = 0 Input capacitance (Common Source) Ciss Output capacitance (Common Source) Coss VDS = 10V, VGS = 0, f = 1MHz Reverse transfer capacitance (Common Source) Crss Turn-on time ton Fall time tf Turn-off time (delay time) td(off) typ VDS = 80V, VGS = 0 VGS = 10V, ID = 2A VDD = 50V, RL = 25Ω 2.5 max Unit 10 µA ±10 µA 115 V 2.5 V 300 450 mΩ 400 600 mΩ 4 S −1.6 V 130 pF 160 pF 25 pF 0.2 µs 0.3 µs 1.5 µs Note) The part number in the parenthesis shows conventional part number. 225 Power Transistor Arrays (F-MOS FETs) PD Ta Area of safe operation (ASO) 100 EAS Tj t=100µs ID 3 1ms 10ms 1 DC 100ms 0.3 0.1 0.03 25 (1) TC=Ta (2) With a 50 × 50 × 2mm Al heat sink (3) Without heat sink 20 16 (1) 12 8 (2) 4 (3) 0 0.01 1 3 10 30 100 300 0 1000 Drain to source voltage VDS (V) 20 40 60 1 0.3 0.1 0.03 30 6 5 4 3 2 100 ID VDS 4V 3.5V 4 3 3V 2 1 2.5V 15W 0 0 10 20 30 1 2 3 4 5 4 3 2 1 6 0 25 40 50 60 Drain to source voltage VDS (V) 50 75 100 125 150 Case temperature TC (˚C) | Yfs | ID 600 5 TC=25˚C 500 VGS=4V 400 300 10V 200 100 0 Forward transfer admittance |Yfs| (S) Drain to source ON-resistance RDS(on) (Ω) Drain current ID (A) VGS=10V 150 5 RDS(on) ID 7 125 VDS=10V ID=1mA Gate to source voltage VGS (V) 8 100 0 0 L-load (mH) 75 VDS=10V TC=25˚C 0 0.01 5 50 Vth TC 1 6 5 6 Gate threshold voltage Vth (V) Drain current ID (A) Avalanche current IAS (A) 22.5mJ 10 10 Junction temperature Tj (˚C) ID 3 15 ID VGS 7 1 20 0 25 80 100 120 140 160 8 TC=25˚C 3 ID=3A Ambient temperature Ta (˚C) IAS L-load 10 226 Avalanche energy capacity EAS (mJ) IDP 10 Allowable power dissipation PD (W) 24 Non repetitive pulse TC=25˚C 30 Drain current ID (A) PUB4753 VDS=10V TC=25˚C 4 3 2 1 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Drain current ID (A) 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Drain current ID (A) Power Transistor Arrays (F-MOS FETs) VDS, VGS Qg ton, tf, td(off) ID 103 Coss 102 Ciss Crss 10 1 ID=3A TC=25˚C 70 20 40 60 80 100 Drain to source voltage VDS (V) 4.0 14 3.5 12 60 10 50 VDS=25V 8 40 50V 6 30 20 4 VGS 2 10 VDS 0 0 16 0 2 4 6 8 10 0 12 Gate charge amount Qg (nC) Switching time ton,tf,td(off) (µs) 80 f=1MHz TC=25˚C Gate to source voltage VGS (V) 104 Drain to source voltage VDS (V) Input capacitance (Common source), Output capacitance (Common source), Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF) Ciss, Coss, Crss VDS PUB4753 VDD=50V VGS=10V TC=25˚C 3.0 2.5 2.0 1.5 td(off) 1.0 0.5 tf ton 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Drain current ID (A) PZSM tp 10000 Zener diode power PZSM (W) 3000 tp 1000 300 100 30 10 3 1 0.1 0.3 1 3 10 30 100 Pulse width tp (ms) 227 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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