Transistor 2SA683, 2SA684 Silicon PNP epitaxial planer type For low-frequency power amplification and driver amplification Complementary to 2SC1383 and 2SC1384 Unit: mm 5.9±0.2 4.9±0.2 Complementary pair with 2SC1383 and 2SC1384. Allowing supply with the radial taping. Parameter 2SA683 base voltage 2SA684 Collector to 2SA683 Ratings –30 VCBO –60 –25 VCEO emitter voltage 2SA684 –50 Unit V +0.2 VEBO –5 V ICP –1.5 A Collector current IC –1 A Collector power dissipation PC 1 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C Symbol ICBO 2SA683 voltage 2SA684 Collector to emitter 2SA683 voltage 2SA684 Emitter to base voltage 1.27 1 Conditions 2 min 3 typ VCB = –20V, IE = 0 1:Emitter 2:Collector 3:Base EIAJ:SC–51 TO–92L Package IC = –10µA, IE = 0 VCEO IC = –2mA, IB = 0 VEBO IE = –10µA, IC = 0 –5 VCE = –10V, IC = –500mA 85 VCE = –5V, IC = –1A 50 * hFE2 max Unit – 0.1 µA –30 VCBO hFE1 Forward current transfer ratio 0.45–0.1 1.27 (Ta=25˚C) Parameter Collector to base +0.2 0.45–0.1 Peak collector current Collector cutoff current 2.54±0.15 V Emitter to base voltage ■ Electrical Characteristics +0.3 (Ta=25˚C) Symbol Collector to 0.7–0.2 0.7±0.1 ■ Absolute Maximum Ratings 13.5±0.5 ● 3.2 ● 8.6±0.2 ■ Features V –60 –25 V –50 V 340 Collector to emitter saturation voltage VCE(sat) IC = –500mA, IB = –50mA – 0.2 – 0.4 V Base to emitter saturation voltage VBE(sat) IC = –500mA, IB = –50mA – 0.85 –1.2 V Transition frequency fT VCB = –10V, IE = 50mA, f = 200MHz 200 Collector output capacitance Cob VCB = –10V, IE = 0, f = 1MHz 20 *h FE1 MHz 30 pF Rank classification Rank Q R S hFE1 85 ~ 170 120 ~ 240 170 ~ 340 1 Transistor 2SA683, 2SA684 PC — Ta IC — VCE 1.2 IC — IB –1.5 –1.2 0.8 IB=–10mA –9mA –8mA –1 –7mA –6mA – 0.75 0.6 –5mA –4mA – 0.5 0.4 0.2 –3mA –2mA – 0.25 0 –1mA – 0.6 – 0.4 – 0.2 60 80 100 120 140 160 0 0 –30 –10 –3 –1 Ta=75˚C –8 –10 –25˚C –100 IC/IB=10 –30 Ta=–25˚C –1 25˚C –3 –10 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 Collector output capacitance Cob (pF) 120 100 80 60 40 20 0 1 3 10 Ta=75˚C 25˚C –25˚C –1 –3 0 – 0.01 – 0.03 – 0.1 – 0.3 –10 30 Emitter current IE (mA) 100 –3 –10 VCER — RBE –120 IE=0 f=1MHz Ta=25˚C 45 40 35 30 25 20 15 10 5 0 –1 –1 Collector current IC (A) Cob — VCB 140 –12 –100 50 160 –10 VCE=–10V Collector current IC (A) VCB=–10V Ta=25˚C –8 –600 –200 fT — IE 180 –6 –300 75˚C Collector current IC (A) 200 –4 Base current IB (mA) –400 –3 – 0.03 –1 –2 –500 –10 – 0.1 – 0.03 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 0 hFE — IC – 0.3 25˚C – 0.1 –6 VBE(sat) — IC IC/IB=10 – 0.3 –4 Collector to emitter voltage VCE (V) Base to emitter saturation voltage VBE(sat) (V) –100 –2 Forward current transfer ratio hFE 40 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) – 0.8 –3 –10 –30 –100 Collector to base voltage VCB (V) Collector to emitter voltage VCER (V) 20 Ambient temperature Ta (˚C) Transition frequency fT (MHz) –1.0 0 0 2 VCE=–10V Ta=25˚C Collector current IC (mA) –1.25 1.0 Collector current IC (A) Collector power dissipation PC (W) Ta=25˚C IC=–10mA Ta=25˚C –100 –80 –60 2SA684 –40 2SA683 –20 0 0.1 0.3 1 3 10 30 100 Base to emitter resistance RBE (kΩ) Transistor 2SA683, 2SA684 ICEO — Ta 104 Area of safe operation (ASO) –10 VCE=–10V Single pulse Ta=25˚C –3 Collector current IC (A) ICP –1 t=10ms IC – 0.3 102 t=1s – 0.1 10 – 0.01 – 0.003 1 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (˚C) – 0.001 – 0.1 – 0.3 –1 –3 –10 2SA684 – 0.03 2SA683 ICEO (Ta) ICEO (Ta=25˚C) 103 –30 –100 Collector to emitter voltage VCE (V) 3