Power Transistors 2SC5788 Silicon NPN epitaxial planar type Unit: mm 10.0±0.2 2.5±0.1 13.0±0.2 ■ Features 5.0±0.1 1.2±0.1 C 1.0 1.48±0.2 18.0±0.5 Solder Dip • High-speed switching (tstg: storage time/tf: fall time is short) • Low collector to emitter saturation voltage VCE(sat) • Superior forward current transfer ratio hFE linearity • Allowing automatic insertion with radial taping 1.0±0.2 90˚ 4.2±0.2 Power supply for Audio & Visual equipments such as TVs and VCRs Industrial equipments such as DC-DC converters 2.25±0.2 0.65±0.1 0.65±0.1 0.35±0.1 1.05±0.1 0.55±0.1 0.55±0.1 ■ Absolute Maximum Ratings TC = 25°C 2.5±0.2 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 60 V Collector-emitter voltage (Base open) VCEO 60 V Emitter-base voltage (Collector open) VEBO 6 V Collector current IC 3 A Peak collector current ICP 6 A PC 15 W Collector power dissipation TC = 25°C Ta = 25°C 2.5±0.2 1 2 3 1: Base 2: Collector 3: Emitter MT-4-A1 Package Marking Symbol: C5788 Internal Connection C 2 Junction temperature Tj 150 °C Storage temperature Tstg −55 ∼ +150 °C B E ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Symbol Collector-emitter voltage (Base open) VCEO IC = 10 mA, IB = 0 Collector-base cutoff current (Emitter open) ICBO VCB = 60 V, IE = 0 100 µA Collector-emitter cutoff current (Base open) ICEO VCE = 60 V, IB = 0 100 µA Emitter-base cutoff current (Collector open) IEBO VEB = 6 V, IC = 0 Forward current transfer ratio hFE1* VCE = 4 V, IC = 1 A 120 hFE2 VCE = 4 V, IC = 3 A 40 Collector-emitter saturation voltage VCE(sat) Conditions Min Typ IC = 3 A, IB = 375 mA fT VCE = 10 V, IC = 0.1 A, f = 10 MHz 180 Turn-on time ton IC = 1 A, Resistance loaded 0.2 Storage time tstg IB1 = 0.1 A, IB2 = − 0.1 A VCC = 50 V tf Unit V Transition frequency Fall time Max 60 1 mA 320 0.8 V MHz 0.3 µs 0.55 0.7 µs 0.1 0.15 µs Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank P Q hFE1 160 to 320 120 to 250 Publication date: November 2002 SJD00290AED 1 2SC5788 VCE(sat) IC VCE = 4 V Collector current IC (A) 6 5 4 3 2 1 0 0 0.5 1.0 1.5 2.0 10 IC / IB = 8 1 0.1 0.01 0.001 0.01 0.1 Safe operation area Collector current IC (A) Non repetitive pulse TC = 25°C 10 I CP t = 1 ms IC t=1s t = 10 ms 1 0.1 0.01 1 10 100 1 000 Collector-emitter voltage VCE (V) 2 1 Collector current IC (A) Base-emitter voltage VBE (V) 100 hFE IC 10 000 Forward current transfer ratio hFE Collector-emitter saturation voltage VCE(sat) (V) IC VBE 7 SJD00290AED 10 Ta = 25°C VCE = 4 V 1 000 100 10 1 0.01 0.1 1 Collector current IC (A) 10 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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