PANASONIC 2SC5788

Power Transistors
2SC5788
Silicon NPN epitaxial planar type
Unit: mm
10.0±0.2
2.5±0.1
13.0±0.2
■ Features
5.0±0.1
1.2±0.1
C 1.0
1.48±0.2
18.0±0.5
Solder Dip
• High-speed switching (tstg: storage time/tf: fall time is short)
• Low collector to emitter saturation voltage VCE(sat)
• Superior forward current transfer ratio hFE linearity
• Allowing automatic insertion with radial taping
1.0±0.2
90˚
4.2±0.2
Power supply for Audio & Visual equipments
such as TVs and VCRs
Industrial equipments such as DC-DC converters
2.25±0.2
0.65±0.1
0.65±0.1
0.35±0.1
1.05±0.1
0.55±0.1
0.55±0.1
■ Absolute Maximum Ratings TC = 25°C
2.5±0.2
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
60
V
Collector-emitter voltage (Base open)
VCEO
60
V
Emitter-base voltage (Collector open)
VEBO
6
V
Collector current
IC
3
A
Peak collector current
ICP
6
A
PC
15
W
Collector power
dissipation
TC = 25°C
Ta = 25°C
2.5±0.2
1 2 3
1: Base
2: Collector
3: Emitter
MT-4-A1 Package
Marking Symbol: C5788
Internal Connection
C
2
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 ∼ +150
°C
B
E
■ Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Collector-emitter voltage (Base open)
VCEO
IC = 10 mA, IB = 0
Collector-base cutoff current (Emitter open)
ICBO
VCB = 60 V, IE = 0
100
µA
Collector-emitter cutoff current (Base open)
ICEO
VCE = 60 V, IB = 0
100
µA
Emitter-base cutoff current (Collector open)
IEBO
VEB = 6 V, IC = 0
Forward current transfer ratio
hFE1*
VCE = 4 V, IC = 1 A
120
hFE2
VCE = 4 V, IC = 3 A
40
Collector-emitter saturation voltage
VCE(sat)
Conditions
Min
Typ
IC = 3 A, IB = 375 mA
fT
VCE = 10 V, IC = 0.1 A, f = 10 MHz
180
Turn-on time
ton
IC = 1 A, Resistance loaded
0.2
Storage time
tstg
IB1 = 0.1 A, IB2 = − 0.1 A
VCC = 50 V
tf
Unit
V
Transition frequency
Fall time
Max
60
1
mA
320

0.8
V
MHz
0.3
µs
0.55
0.7
µs
0.1
0.15
µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
P
Q
hFE1
160 to 320
120 to 250
Publication date: November 2002
SJD00290AED
1
2SC5788
VCE(sat)  IC
VCE = 4 V
Collector current IC (A)
6
5
4
3
2
1
0
0
0.5
1.0
1.5
2.0
10
IC / IB = 8
1
0.1
0.01
0.001
0.01
0.1
Safe operation area
Collector current IC (A)
Non repetitive pulse
TC = 25°C
10 I
CP
t = 1 ms
IC
t=1s
t = 10 ms
1
0.1
0.01
1
10
100
1 000
Collector-emitter voltage VCE (V)
2
1
Collector current IC (A)
Base-emitter voltage VBE (V)
100
hFE  IC
10 000
Forward current transfer ratio hFE
Collector-emitter saturation voltage VCE(sat) (V)
IC  VBE
7
SJD00290AED
10
Ta = 25°C
VCE = 4 V
1 000
100
10
1
0.01
0.1
1
Collector current IC (A)
10
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and semiconductors described in this material
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if any of the products or technologies described in this material and controlled under the "Foreign
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(4) The products described in this material are intended to be used for standard applications or general
electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
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(5) The products and product specifications described in this material are subject to change without
notice for modification and/or improvement. At the final stage of your design, purchasing, or use of
the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that
the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
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2002 JUL