Power Transistors 2SB1193 Silicon PNP epitaxial planar type darlington Unit: mm 14.0±0.5 • High forward current transfer ratio hFE • High-speed switching • Full-pack package which can be installed to the heat sink with one screw ■ Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −120 V Collector-emitter voltage (Base open) VCEO −120 V Emitter-base voltage (Collector open) VEBO −7 V Collector current IC −8 A Peak collector current ICP −12 A PC 50 W Collector power dissipation Ta = 25°C 4.2±0.2 5.5±0.2 4.2±0.2 2.7±0.2 φ 3.1±0.1 1.4±0.1 Solder Dip (4.0) 16.7±0.3 ■ Features 10.0±0.2 7.5±0.2 0.7±0.1 For midium-speed power switching Complementary to 2SD1773 0.8±0.1 1.3±0.2 0.5+0.2 –0.1 2.54±0.3 5.08±0.5 1: Base 2: Collector 3: Emitter EIAJ: SC-67 TO-220F-A1 Package 1 2 3 Internal Connection 2 C Junction temperature Tj 150 °C Storage temperature Tstg −55 ∼ +150 °C B E ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Collector-emitter sustaining voltage Symbol Conditions VCEO(SUS) IC = −2 A, L = 10 mH * Min Typ Max Unit −120 V −7 V Emitter-base voltage (Collector open) VEBO IE = −50 mA, IC = 0 Collector-base cutoff current (Emitter open) ICBO VCB = −120 V, IE = 0 −100 µA Collector-emitter cutoff current (Base open) ICEO VCE = −100 V, IB = 0 −10 µA Forward current transfer ratio Collector-emitter saturation voltage Base-emitter saturation voltage hFE VCE = −3 V, IC = −4 A 20 000 VCE(sat)1 IC = −4 A, IB = −8 mA −1.5 V VCE(sat)2 IC = −8 A, IB = −80 mA −3.0 VBE(sat)1 IC = −4 A, IB = −8 mA −2.0 VBE(sat)2 IC = −8 A, IB = −80 mA 1 000 V −3.5 fT VCE = −10 V, IC = − 0.5 A, f = 1 MHz 15 Turn-on time ton IC = −4 A, IB1 = −8 mA, IB2 = 8 mA 0.7 µs Storage time tstg VCC = −50 V 3.5 µs 2.0 µs Transition frequency Fall time tf MHz Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: VCEO(SUS) test circuit 50 Hz/60 Hz X mercury relay L 120 Ω 6V Publication date: February 2003 Y 1Ω 15 V SJD00059AED G 1 2SB1193 60 VCE(sat) IC IB=–5mA TC=25˚C –4mA –3mA −8 Collector current IC (A) Collector power dissipation PC (W) IC VCE −10 (1)TC=Ta (2)With a 100×100×2mm Al heat sink (3)Without heat sink (PC=2.0W) Collector-emitter saturation voltage VCE(sat) (V) PC Ta 80 (1) 40 20 –2mA –1.5mA −6 –1mA –0.75mA −4 –0.5mA (3) 0 0 40 80 120 160 −2 0 −4 VBE(sat) IC 104 (1)IC/IB=500 (2)IC/IB=250 (3)IC/IB=100 TC=25˚C (3) (1) −1 − 0.1 Forward current transfer ratio hFE (2) −1 −8 −10 –25˚C 102 −1 −10 Thermal resistance Rth (°C/W) Collector current IC (A) ICP IC t=1ms −1 DC − 0.1 − 0.01 −1 −10 −100 10 tstg tf 1 ton 0.1 0.01 0 −2 −4 −6 Collector current IC (A) −1 000 (1) (1)Without heat sink (2)With a 100×100×2mm Al heat sink (2) 10 1 10−1 10−2 10−4 10−3 10−2 Collector-emitter voltage VCE (V) 2 Pulsed tw=1ms Duty cycle=1% IC/IB=500 (–IB1=IB2) VCC=–50V TC=25˚C Rth t 102 Non repetitive pulse TC=25˚C t=10ms 100 Collector current IC (A) Safe operation area −10 −10 ton, tstg, tf IC 103 10 − 0.1 −10 −1 Collector current IC (A) 25˚C Collector current IC (A) −100 (3) − 0.01 − 0.1 −12 VCE=–3V TC=100˚C − 0.01 − 0.1 (2) hFE IC −10 (1) −1 Collector-emitter voltage VCE (V) Ambient temperature Ta (°C) Base-emitter saturation voltage VBE(sat) (V) −6 Turn-on time ton , Storage time tstg , Fall time tf (µs) 0 (1) IC/IB=500 (2) IC/IB=250 (3) IC/IB=100 TC=25 C − 0.1 −2 (2) −10 10−1 1 Time t (s) SJD00059AED 10 102 103 104 −8 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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