Power Transistors 2SD1259, 2SD1259A Silicon NPN triple diffusion planar type 1.5±0.1 10.0±0.3 1.0±0.1 1.5max. 1.1max. 2.0 ● High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 10.5min. ● Unit: mm 6.0±0.5 ■ Features ● 3.4±0.3 8.5±0.2 For power amplification with high forward current transfer ratio 0.8±0.1 0.5max. 2.54±0.3 80 VEBO 6 V Peak collector current ICP 6 A Collector current IC 3 A Base current IB 1 A dissipation Ta=25°C Storage temperature Tstg ■ Electrical Characteristics 0.8±0.1 2SD1259 current 2SD1259A 40 150 ˚C –55 to +150 ˚C ICES Conditions max Unit 100 100 µA 100 µA VCB = 6V, IC = 0 VCEO IC = 25mA, IB = 0 Forward current transfer ratio hFE* VCE = 4V, IC = 0.5A Collector to emitter saturation voltage VCE(sat) IC = 2A, IB = 0.05A Transition frequency fT VCE = 12V, IC = 0.2A, f = 10MHz FE typ VCE = 100V, IE = 0 IEBO *h min 100 Emitter cutoff current 2SD1259A 1:Base 2:Collector 3:Emitter N Type Package (DS) 3 VCE = 80V, IE = 0 VCE = 40V, IB = 0 voltage 2 (TC=25˚C) ICEO 2SD1259 0 to 0.4 W 1.3 Collector cutoff current Collector to emitter R0.5 R0.5 5.08±0.5 Symbol Parameter Collector cutoff 1.0±0.1 2.54±0.3 1 Tj 6.0±0.3 1.1 max. PC Junction temperature 3.4±0.3 V Emitter to base voltage Collector power TC=25°C Unit: mm 8.5±0.2 14.7±0.5 emitter voltage 2SD1259A 60 VCEO V +0.4 2SD1259 100 3.0–0.2 Collector to 80 VCBO 4.4±0.5 2SD1259A Unit +0 2SD1259 base voltage 1:Base 2:Collector 3:Emitter N Type Package 3 1.5–0.4 Collector to Ratings 2 10.0±0.3 Symbol 1 2.0 Parameter 5.08±0.5 (TC=25˚C) 4.4±0.5 ■ Absolute Maximum Ratings 60 µA V 80 500 2500 1 50 V MHz Rank classification Rank hFE Q P O 500 to 1000 800 to 1500 1200 to 2500 Note: Ordering can be made by the common rank (PQ rank hFE = 500 to 1500) in the rank classification. 1 Power Transistors 2SD1259, 2SD1259A PC — Ta IC — VCE IC — VBE 1.0 (1) 40 30 20 5 IB=1.2mA TC=25˚C 1.0mA 10 0.8 Collector current IC (A) (1) TC=Ta (2) With a 50 × 50 × 2mm Al heat sink (3) Without heat sink (PC=1.3W) Collector current IC (A) Collector power dissipation PC (W) 50 0.7mA 0.6mA 0.6 0.5mA 0.4mA 0.4 0.3mA 0.2mA 0.2 25˚C 4 –25˚C TC=100˚C 3 2 1 (2) 0.1mA (3) 0 0 0 20 40 60 80 100 120 140 160 0 0 Ambient temperature Ta (˚C) 2 4 8 10 3000 –25˚C 0.3 0.1 0.03 0.01 0.01 0.03 0.1 0.3 1 3 300 100 30 10 3 0.1 0.3 1 3 t=1ms 10ms 300ms 0.3 0.01 1 3 10 30 2SD1259A 2SD1259 0.1 0.03 100 300 Collector to emitter voltage VCE 10 1000 (V) 0.1 0.3 1 3 Collector current IC (A) Rth(t) — t Thermal resistance Rth(t) (˚C/W) 10 I CP IC 30 Collector current IC (A) Non repetitive pulse TC=25˚C 1 100 1 0.01 0.03 10 103 3 300 3 Area of safe operation (ASO) 30 1.2 1000 –25˚C 25˚C 1 0.01 0.03 10 1.0 VCE=12V f=10MHz TC=25˚C 3000 TC=100˚C Transition frequency fT (MHz) 25˚C 1 0.8 fT — IC 1000 TC=100˚C 0.6 VCE=4V Forward current transfer ratio hFE 10 0.4 10000 IC/IB=40 30 3 0.2 Base to emitter voltage VBE (V) hFE — IC 100 Collector current IC (A) 0 10000 100 Collector current IC (A) 2 12 Collector to emitter voltage VCE (V) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) 6 (1) Without heat sink (2) With a 50 × 50 × 2mm Al heat sink (1) 102 (2) 10 1 10–1 10–2 10–4 10–3 10–2 10–1 1 Time t (s) 10 102 103 104 10