Power Transistors 2SD2544 Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio Unit: mm 5.0±0.1 ■ Features ■ Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 60 V Emitter to base voltage VEBO 7 V Peak collector current ICP 8 A Collector current IC 4 A Collector power TC=25°C Ta=25°C dissipation 15 PC Junction temperature Tj Storage temperature Tstg 90° 0.35±0.1 1.2±0.1 150 ˚C –55 to +150 ˚C C1.0 2.25±0.2 0.65±0.1 1.05±0.1 0.55±0.1 0.55±0.1 C1.0 1 2 3 2.5±0.2 2.5±0.2 1:Base 2:Collector 3:Emitter MT4 Type Package W 2 ■ Electrical Characteristics 1.0 2.5±0.2 ● 13.0±0.2 4.2±0.2 ● High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE Allowing supply with the radial taping 18.0±0.5 Solder Dip ● 10.0±0.2 (TC=25˚C) Parameter Symbol Conditions min Collector cutoff current ICBO Emitter cutoff current IEBO VEB = 7V, IC = 0 Collector to emitter voltage VCEO IC = 10mA, IB = 0 60 hFE1 * typ VCB = 60V, IE = 0 max Unit 10 µA 10 µA V VCE = 2V, IC = 0.8A 500 hFE2 VCE = 2V, IC = 2A 60 Collector to emitter saturation voltage VCE(sat) IC = 2A, IB = 50mA 0.5 V Base to emitter saturation voltage VBE(sat) IC = 2A, IB = 50mA 1.5 V Transition frequency fT VCE = 10V, IC = 0.5A, f = 10MHz Turn-on time ton Storage time tstg Fall time tf Forward current transfer ratio *h FE1 IC = 2A, IB1 = 50mA, IB2 = –50mA, VCC = 50V 1000 2000 70 MHz 0.5 µs 3.6 µs 1.1 µs Rank classification Rank hFE1 Q P 500 to 1200 800 to 2000 1 Power Transistors 2SD2544 PC — Ta IC — VCE 50mA (1) 10 5 6 20mA 5 10mA 4 6mA 3 4mA 2 2mA 1 (2) 0 40 60 80 100 120 140 160 0 2 4 0.3 0.1 25˚C –25˚C 0.3 1 3 3 TC=100˚C 25˚C –25˚C 0.3 0.1 0.03 0.01 0.1 0.3 1 3 10 0.3 Area of safe operation (ASO) IE=0 f=1MHz TC=25˚C 30 10 Non repetitive pulse TC=25˚C 30 Collector current IC (A) 100 10 ICP IC t=1ms 3 DC 1 10ms 0.3 0.1 3 0.03 1 0.01 30 100 Collector to base voltage VCB (V) 1 3 10 Collector current IC (A) VCE=10V f=10MHz TC=25˚C 300 100 30 10 3 1 3 10 30 100 300 1 0.01 0.03 0.1 0.3 1 3 Collector current IC (A) 100 10 0.03 0.003 Collector current IC (A) Cob — VCB 3 0.1 fT — IC 1 0.001 0.01 0.03 10 1000 1 25˚C 1000 Collector current IC (A) 300 100˚C 0.3 0.01 0.1 12 TC=–25˚C VCE=5V Forward current transfer ratio hFE TC=100˚C 0.1 1 hFE — IC 3 0.01 0.01 0.03 10 10 IC/IB=20 0.03 8 IC/IB=20 3 Collector to emitter voltage VCE (V) VCE(sat) — IC 10 1 6 Transition frequency fT (MHz) 20 Ambient temperature Ta (˚C) Collector to emitter saturation voltage VCE(sat) (V) TC=25˚C 7 15 0 Collector output capacitance Cob (pF) Base to emitter saturation voltage VBE(sat) (V) 10 IB=100mA (1) TC=Ta (2) Without heat sink (PC=2.0W) 0 2 VBE(sat) — IC 8 Collector current IC (A) Collector power dissipation PC (W) 20 1000 Collector to emitter voltage VCE (V) 10 Power Transistors 2SD2544 Rth(t) — t Thermal resistance Rth(t) (˚C/W) 10000 Note: Rth was measured at Ta=25˚C and under natural convection. (1) Without heat sink (2) With a 50 × 50 × 2mm Al heat sink 1000 100 (1) (2) 10 1 0.1 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3