Power Transistors 2SD1975, 2SD1975A Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1317 and 2SB1317A Unit: mm φ 3.3±0.2 5.0±0.3 3.0 ● ■ Absolute Maximum Ratings Parameter (TC=25˚C) Symbol Collector to 2SD1975 base voltage 2SD1975A Collector to 2SD1975 Ratings 180 VCBO 200 180 VCEO emitter voltage 2SD1975A 200 Unit 4.0 0.6±0.2 5.45±0.3 10.9±0.5 1 5 V Peak collector current ICP 25 A Collector current IC 15 A dissipation 150 PC Ta=25°C Junction temperature Tj Storage temperature Tstg 3.5 ■ Electrical Characteristics current 2SD1975A Emitter cutoff current Forward current transfer ratio 3 W 150 ˚C –55 to +150 ˚C Symbol 2SD1975 2 1:Base 2:Collector 3:Emitter TOP–3L Package (TC=25˚C) Parameter Collector cutoff 2.7±0.3 1.0±0.2 V VEBO 1.5 2.0±0.3 3.0±0.3 V Emitter to base voltage Collector power TC=25°C 2.0 2.0 26.0±0.5 10.0 1.5 Solder Dip ● 1.5 ● Satisfactory foward current transfer ratio hFE collector current IC characteristics Wide area of safe operation (ASO) High transition frequency fT Optimum for the output stage of a HiFi audio amplifier 20.0±0.5 2.5 ● 6.0 ■ Features 3.0 20.0±0.5 Conditions min typ max VCB = 180V, IE = 0 50 VCB = 200V, IE = 0 50 IEBO VEB = 3V, IC = 0 50 hFE1 VCE = 5V, IC = 20mA 20 hFE2* VCE = 5V, IC = 1A 60 20 ICBO Unit µA µA 200 hFE3 VCE = 5V, IC = 8A Base to emitter voltage VBE VCE = 5V, IC = 8A Collector to emitter saturation voltage VCE(sat) IC = 10A, IB = 1A Transition frequency fT VCE = 5V, IC = 0.5A, f = 1MHz 20 MHz Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz 200 pF *h FE2 1.8 2.5 V V Rank classification Rank Q S P hFE2 60 to 120 80 to 160 100 to 200 1 Power Transistors 2SD1975, 2SD1975A PC — Ta IC — VCE 200 IC — VBE 24 24 100 50 20 16 12 200mA 8 100mA 4 (2) 40 60 80 100 120 140 160 Ambient temperature Ta (˚C) 2 4 8 3 TC=100˚C 25˚C –25˚C 0.3 0.1 0.03 0.3 1 3 8 10 12 10 30 300 TC=100˚C 25˚C 100 –25˚C 30 10 3 1 0.1 100 0.3 1 3 10 30 100 Collector current IC (A) Cob — VCB Area of safe operation (ASO) 300 100 ICP 10 IC Non repetitive pulse TC=25˚C t=10ms 100ms 3 DC 1 0.3 0.1 30 0.03 10 0.01 10 30 100 Collector to base voltage VCB (V) 1 3 10 30 100 2SD1975A Collector current IC (A) 1000 30 2SD1975 IE=0 f=1MHz TC=25˚C 2 3 4 1000 300 VCE=10V f=1MHz TC=25˚C 300 100 30 10 3 1 0.01 0.03 0.1 0.3 1 3 Collector current IC (A) 100 10000 3 1 Base to emitter voltage VBE (V) fT — IC VCE=5V Collector current IC (A) 3000 0 hFE — IC IC/IB=10 1 6 1000 Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat) (V) 100˚C TC=–25˚C 12 Collector to emitter voltage VCE (V) VCE(sat) — IC 10 1 25˚C 0 0 Transition frequency fT (MHz) 20 0.01 0.1 16 4 0 0 Collector output capacitance Cob (pF) 20 800mA 700mA 600mA 500mA 400mA 300mA (3) 0 2 VCE=5V IB=1000mA Collector current IC (A) (1) 150 Collector current IC (A) Collector power dissipation PC (W) TC=25˚C (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) Without heat sink (PC=3.5W) 1000 Collector to emitter voltage VCE (V) 10 Power Transistors 2SD1975, 2SD1975A Rth(t) — t Thermal resistance Rth(t) (˚C/W) 10000 Note: Rth was measured at Ta=25˚C and under natural convection. (1) PT=10V × 0.3A (3W) and without heat sink (2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink 1000 100 (1) 10 (2) 1 0.1 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3