Power Transistors 2SB1417, 2SB1417A Silicon PNP epitaxial planar type For power amplification Complementary to 2SD2137 and 2SD2137A Unit: mm ■ Features ■ Absolute Maximum Ratings Parameter (TC=25˚C) Symbol Collector to 2SB1417 base voltage 2SB1417A Collector to 2SB1417 Ratings VCBO –60 V –80 Emitter to base voltage VEBO –6 V Peak collector current ICP –5 A Collector current IC –3 A Collector power TC=25°C dissipation Ta=25°C Junction temperature Tj Storage temperature Tstg 150 ˚C –55 to +150 ˚C Symbol current 2SB1417A Collector cutoff 2SB1417 current 2SB1417A Emitter cutoff current Collector to emitter 2SB1417 voltage 2SB1417A Forward current transfer ratio C1.0 2.25±0.2 0.55±0.1 0.55±0.1 C1.0 1 2 3 2.5±0.2 1:Base 2:Collector 3:Emitter MT4 Type Package (TC=25˚C) Parameter 2SB1417 1.2±0.1 0.65±0.1 1.05±0.1 W 2.0 ■ Electrical Characteristics Collector cutoff 0.35±0.1 2.5±0.2 15 PC 1.0 90° V –80 VCEO emitter voltage 2SB1417A Unit –60 5.0±0.1 10.0±0.2 2.5±0.2 ● High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Allowing automatic insertion with radial taping 13.0±0.2 4.2±0.2 ● 18.0±0.5 Solder Dip ● Conditions min typ max VCE = –60V, VBE = 0 –100 VCE = –80V, VBE = 0 –100 VCE = –30V, IB = 0 –100 VCE = –60V, IB = 0 –100 IEBO VEB = –6V, IC = 0 –100 VCEO IC = –30mA, IB = 0 hFE1* VCE = –4V, IC = –1A 70 hFE2 VCE = –4V, IC = –3A 10 ICES ICEO –60 Unit µA µA µA V –80 250 Base to emitter voltage VBE VCE = –4V, IC = –3A –1.8 V Collector to emitter saturation voltage VCE(sat) IC = –3A, IB = – 0.375A –1.2 V Transition frequency fT VCE = –5V, IC = – 0.2A, f = 10MHz Turn-on time ton Storage time tstg Fall time tf *h FE1 IC = –1A, IB1 = – 0.1A, IB2 = 0.1A, VCC = –50V 30 MHz 0.3 µs 1.0 µs 0.2 µs Rank classification Rank Q P hFE1 70 to 150 120 to 250 Note: Ordering can be made by the common rank (PQ rank hFE1 = 70 to 250) in the rank classification. 1 Power Transistors 2SB1417, 2SB1417A PC — Ta IC — VCE –5 10 (1) 5 IB=–100mA –90mA –80mA –70mA –60mA –4 –50mA –40mA –3 –30mA –20mA –2 –10mA –1 0 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) –2 –4 –6 –8 –12 30000 Transition frequency fT (MHz) 25˚C –1 –25˚C –1.6 –2.0 300 TC=100˚C 100 –25˚C 25˚C 30 Cob — VCB –1 –3 3 Pulsed tw=1ms Duty cycle=1% IC/IB=5 (IB1=–IB2) VCC=–200V TC=25˚C –100 Collector to base voltage VCB (V) –1 –3 –10 Collector current IC (A) 10 3 tstg 1 ton 0.3 0.1 Non repetitive pulse TC=25˚C –30 –10 ICP –3 –1 IC t=1ms 10ms DC – 0.3 – 0.1 tf – 0.03 0.01 –30 10 Area of safe operation (ASO) 0.03 –10 30 –100 30 Switching time ton,tstg,tf (µs) 10 100 Collector current IC (A) ton, tstg, tf — IC 30 –100 300 1 – 0.01 – 0.03 – 0.1 – 0.3 –10 100 100 –30 VCE=–5V f=10MHz TC=25˚C Collector current IC (A) 1000 300 –10 3 Base to emitter voltage VBE (V) IE=0 f=1MHz TC=25˚C –3 1000 10 – 0.01 – 0.03 – 0.1 – 0.3 0 –1.2 –1 Collector current IC (A) 3000 1000 –2 – 0.8 – 0.01 – 0.1 – 0.3 fT — IC 3000 TC=100˚C –3 25˚C 10000 10000 –4 1 –1 100˚C – 0.1 VCE=–4V Forward current transfer ratio hFE Collector current IC (A) –5 – 0.4 TC=–25˚C – 0.3 hFE — IC VCE=–4V Collector output capacitance Cob (pF) –10 100000 0 –1 Collector to emitter voltage VCE (V) IC — VBE –6 –3 –3 2SB1417 20 –10 – 0.03 (2) 0 IC/IB=8 –30 0 –1 –2 –3 Collector current IC (A) –4 – 0.01 –1 –3 –10 –30 2SB1417A 15 Collector to emitter saturation voltage VCE(sat) (V) TC=25˚C (1) TC=Ta (2) Without heat sink (PC=2.0W) 0 2 VCE(sat) — IC –100 –6 Collector current IC (A) Collector power dissipation PC (W) 20 –100 –300 –1000 Collector to emitter voltage VCE (V) Power Transistors 2SB1417, 2SB1417A Rth(t) — t Thermal resistance Rth(t) (˚C/W) 10000 Note: Rth was measured at Ta=25˚C and under natural convection. (1) Without heat sink (2) With a 50 × 50 × 2mm Al heat sink 1000 100 (1) (2) 10 1 0.1 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3