Power Transistors 2SD2140 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1421 Unit: mm 15.0±0.5 4.0±0.1 15.0±0.2 20.0±0.3 10.5±0.5 2.0±0.1 φ3.2±0.1 3.5 ● 19.0±0.3 ● 16.2±0.5 ● Satisfactory foward current transfer ratio hFE vs. collector current IC characteristics Wide area of safe operation (ASO) High transition frequency fT Optimum for the output stage of a HiFi audio amplifier 12.5 ● 4.5±0.2 13.0±0.5 4.0±0.1 ■ Features (TC=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 140 V Collector to emitter voltage VCEO 140 V Emitter to base voltage VEBO 5 V Peak collector current ICP 12 A Collector current IC 7 A Collector power TC=25°C dissipation 80 PC Ta=25°C Junction temperature Tj Storage temperature Tstg 0.6±0.2 5.45±0.3 10.9±0.5 1 2 3 1:Base 2:Collector 3:Emitter EIAJ:SC–65(a) TOP–3 Package(a) 150 ˚C –55 to +150 ˚C (TC=25˚C) Parameter Symbol Conditions min Collector cutoff current ICBO Emitter cutoff current IEBO VEB = 3V, IC = 0 hFE1 VCE = 5V, IC = 20mA 20 hFE2* VCE = 5V, IC = 1A 60 hFE3 VCE = 5V, IC = 5A 20 Forward current transfer ratio 1.4±0.3 1.1±0.1 W 2.5 ■ Electrical Characteristics 2.0±0.2 Solder Dip ■ Absolute Maximum Ratings typ VCB = 140V, IE = 0 max Unit 50 µA 50 µA 200 Base to emitter voltage VBE VCE = 5V, IC = 5A 1.8 V Collector to emitter saturation voltage VCE(sat) IC = 5A, IB = 0.5A 2.0 V Transition frequency fT VCE = 5V, IC = 0.5A, f = 1MHz 20 MHz Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz 110 pF *h FE2 Rank classification Rank Q S P hFE2 60 to 120 80 to 160 100 to 200 1 Power Transistors 2SD2140 PC — Ta IC — VCE IC — VBE 12 100 80 (1) 60 40 20 12 TC=25˚C IB=500mA 10 10 400mA 300mA 200mA 8 150mA 100mA 6 4 50mA 20mA 2 (2) VCE=5V 25˚C Collector current IC (A) (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) Without heat sink (PC=2.5W) Collector current IC (A) Collector power dissipation PC (W) 120 TC=–25˚C 100˚C 8 6 4 2 (3) 0 0 20 40 60 80 100 120 140 160 0 0 Ambient temperature Ta (˚C) 2 4 Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat) (V) VCE=5V IC/IB=10 30 10 3 TC=100˚C 25˚C –25˚C 0.3 0.1 0.03 0.01 0.1 0.3 1 3 12 10 30 300 TC=100˚C 100 –25˚C 25˚C 30 10 3 1 0.01 0.03 100 0.1 0.3 1 3 10 Collector current IC (A) Cob — VCB Area of safe operation (ASO) IE=0 f=1MHz TC=25˚C 300 100 Non repetitive pulse TC=25˚C 30 Collector current IC (A) 1000 ICP 10 IC 3 t=10ms 100ms 1 DC 0.3 0.1 30 0.03 10 0.01 1 3 10 1 30 100 Collector to base voltage VCB (V) 1 3 10 30 2 3 4 Base to emitter voltage VBE (V) 100 1000 300 VCE=5V f=1MHz TC=25˚C 300 100 30 10 3 1 0.01 0.03 0.1 0.3 1 3 Collector current IC (A) 100 10000 3000 0 fT — IC 1000 1 10 hFE — IC 100 Collector current IC (A) Collector output capacitance Cob (pF) 8 Collector to emitter voltage VCE (V) VCE(sat) — IC 2 6 Transition frequency fT (MHz) 0 1000 Collector to emitter voltage VCE (V) 10 Power Transistors 2SD2140 Rth(t) — t Thermal resistance Rth(t) (˚C/W) 10000 Note: Rth was measured at Ta=25˚C and under natural convection. (1) PT=10V × 0.2A (2W) and without heat sink (2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink 1000 100 (1) 10 (2) 1 0.1 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3