Power Transistors 2SB1418, 2SB1418A Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD2138 and 2SD2138A Unit: mm 5.0±0.1 10.0±0.2 ● High foward current transfer ratio hFE High-speed switching Allowing automatic insertion with radial taping ■ Absolute Maximum Ratings Parameter (TC=25˚C) Symbol Collector to 2SB1418 base voltage 2SB1418A Collector to 2SB1418 Ratings Unit –60 VCBO 90° 0.35±0.1 –60 –80 0.55±0.1 –5 V Peak collector current ICP –4 A Collector current IC –2 A Ta=25°C 15 PC Junction temperature Tj Storage temperature Tstg 1 2 3 2.5±0.2 VEBO dissipation 0.65±0.1 1.05±0.1 V Emitter to base voltage Collector power TC=25°C C1.0 2.25±0.2 0.55±0.1 C1.0 emitter voltage 2SB1418A 1.2±0.1 V –80 VCEO 1.0 2.5±0.2 ● 18.0±0.5 Solder Dip ● 13.0±0.2 4.2±0.2 ■ Features 2.5±0.2 Internal Connection C W 2.0 150 ˚C –55 to +150 ˚C 1:Base 2:Collector 3:Emitter MT4 Type Package B E ■ Electrical Characteristics Parameter (TC=25˚C) Symbol Collector cutoff 2SB1418 current 2SB1418A Collector cutoff 2SB1418 current 2SB1418A Emitter cutoff current Collector to emitter 2SB1418 voltage 2SB1418A Forward current transfer ratio Conditions min typ max VCB = –60V, IB = 0 –100 VCB = –80V, IB = 0 –100 VCE = –30V, IB = 0 –100 VCE = –40V, IB = 0 –100 IEBO VEB = –5V, IC = 0 –100 VCEO IC = –30mA, IB = 0 hFE1 VCE = –4V, IC = –1A 1000 hFE2* VCE = –4V, IC = –2A 2000 ICBO ICEO –60 Unit µA µA µA V –80 10000 Base to emitter voltage VBE VCE = –4V, IC = –2A –2.8 V Collector to emitter saturation voltage VCE(sat) IC = –2A, IB = –8mA –2.5 V Transition frequency fT VCE = –10V, IC = – 0.5A, f = 1MHz 20 MHz Turn-on time ton IC = –2A, IB1 = –8mA, IB2 = 8mA, 0.2 µs Turn-off time toff VCC = –50V 2 µs *h FE2 Rank classification Rank hFE2 Q P 2000 to 5000 4000 to 10000 1 Power Transistors 2SB1418, 2SB1418A PC — Ta IC — VCE –5 15 (1) 10 5 –1.6mA –1.8mA –1.4mA –1.2mA IB=–2.0mA –1.0mA – 0.8mA –4 –3 – 0.6mA – 0.4mA 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) –2 –4 –6 –8 –10 Collector output capacitance Cob (pF) TC=100˚C 25˚C TC=100˚C 3000 –3 –25˚C 1000 25˚C –25˚C –1 –1 –2 –3 300 100 30 10 – 0.01 – 0.03 – 0.1 – 0.3 0 –4 Base to emitter voltage VBE (V) –1 –3 –30 100 30 10 3 –3 –10 –30 Rth(t) — t Thermal resistance Rth(t) (˚C/W) Non repetitive pulse TC=25˚C Note: Rth was measured at Ta=25˚C and under natural convection. (1) Without heat sink (2) With a 50 × 50 × 2mm Al heat sink 1000 –10 ICP –3 –1 t=1ms IC 10ms – 0.3 DC – 0.03 – 0.01 –1 –3 –10 –30 2SB1418A 2SB1418 – 0.1 –100 –300 –1000 Collector to emitter voltage VCE (V) 100 (1) (2) 10 1 0.1 10–4 10–3 10–2 10–1 –100 Collector to base voltage VCB (V) 10000 –30 –100 IE=0 f=1MHz TC=25˚C 300 1 –1 –10 Collector current IC (A) Area of safe operation (ASO) –100 –10 Cob — VCB 30000 10000 –4 –3 1000 VCE=–4V Forward current transfer ratio hFE –5 –1 Collector current IC (A) hFE — IC VCE=–4V Collector current IC (A) –1 – 0.01 – 0.1 – 0.3 –12 100000 0 –25˚C –3 Collector to emitter voltage VCE (V) IC — VBE –6 –2 TC=100˚C – 0.03 0 40 25˚C –10 – 0.1 – 0.2mA (2) 20 IC/IB=250 –30 – 0.3 –2 –1 0 2 Collector to emitter saturation voltage VCE(sat) (V) TC=25˚C (1) TC=Ta (2) Without heat sink (PC=2.0W) 0 Collector current IC (A) VCE(sat) — IC –100 –6 Collector current IC (A) Collector power dissipation PC (W) 20 1 Time t (s) 10 102 103 104