IRF230, IRF231, IRF232, IRF233 Semiconductor 8.0A and 9.0A, 150V and 200V, 0.4 and 0.6 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 8.0A and 9.0A, 150V and 200V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. • rDS(ON) = 0.4Ω and 0.6Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance Formerly developmental type TA17412. • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol Ordering Information PART NUMBER D PACKAGE BRAND IRF230 TO-204AA IRF230 IRF231 TO-204AA IRF231 IRF232 TO-204AA IRF232 IRF233 TO-204AA IRF233 G S NOTE: When ordering, use the entire part number. Packaging JEDEC TO-204AA DRAIN (FLANGE) SOURCE (PIN 2) GATE (PIN 1) CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright © Harris Corporation 1997 1 File Number 1568.2 IRF230, IRF231, IRF232, IRF233 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Drain to Source Breakdown Voltage (Note 1). . . . . . . . . .VDS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . VDGR Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . .VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . EAS Operating and Storage Temperature . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . Tpkg IRF230 200 200 9.0 6.0 36 ±20 75 0.6 150 -55 to 150 IRF231 150 150 9.0 6.0 36 ±20 75 0.6 150 -55 to 150 IRF232 200 200 8.0 5.0 32 ±20 75 0.6 150 -55 to 150 IRF233 150 150 8.0 5.0 32 ±20 75 0.6 150 -55 to 150 UNITS V V A A A V W W/oC mJ oC 300 260 300 260 300 260 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to TJ = 125oC. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER MIN TYP MAX UNITS IRF230, IRF232 200 - - V IRF231, IRF233 150 - - V 2.0 - 4.0 V ±100 nA Drain to Source Breakdown Voltage Gate Threshold Voltage SYMBOL BVDSS TEST CONDITIONS ID = 250µA, VGS = 0V, (Figure 10) VGS(TH) VGS = VDS, ID = 250µA Gate to Source Leakage Current IGSS VGS = ±20V Zero Gate Voltage Drain Current IDSS VDS = Rated BVDSS, VGS = 0V - - 25 µA VDS = 0.8 x Rated BVDSS, VGS = 0V TJ = 125oC - - 250 µA IRF230, IRF231 9.0 - - A IRF232, IRF233 8.0 - - A IRF230, IRF231 - 0.25 0.4 Ω IRF232, IRF233 - 0.4 0.6 Ω 3.0 4.8 - S - - 30 ns - - 50 ns - - 50 ns - - 40 ns - 19 30 nC - 10 - nC - 9 - nC On-State Drain Current (Note 2) Drain to Source On Resistance (Note 2) Forward Transconductance (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge (Gate to Source + Gate to Drain) Gate to Source Charge Gate to Drain “Miller” Charge ID(ON) rDS(ON) gfs td(ON) tr td(OFF) VDS > ID(ON) x rDS(ON)MAX, VGS = 10V ID = 5A, VGS = 10V, (Figure 8, 9) VDS ≥ 50V, ID = 5A, (Figure 12) VDD = 90V, ID ≈ 5A,RG = 15Ω, RL =18Ω (Figures 17, 18) MOSFET Switching Times are Essentially Independent of Operating Temperature tf Qg(TOT) VGS = 10V, ID = 12A, VDS = 0.8V x Rated BVDSS, Ig(REF) = 1.5mA, (Figures 14, 19, 20) Gate Charge is Essentially Independent of Operating Qgs Temperature Qgd 2 IRF230, IRF231, IRF232, IRF233 Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued) PARAMETER SYMBOL MIN TYP MAX UNITS - 600 - pF - 250 - pF - 80 - pF - 5.0 - nH - 12.5 - nH - - 1.6 oC/W - - 30 oC/W MIN TYP MAX UNITS - - 9.0 A - - 36 A TJ = 25oC, ISD = 9.0A, VGS = 0V, (Figure 13) - - 2.0 V trr TJ = 150oC, ISD = 9.0A, dISD/dt = 100A/µs - 450 - ns QRR TJ = 150oC, ISD = 9.0A, dISD/dt = 100A/µs - 3.0 - µC Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS Internal Drain Inductance Internal Source Inductance LD LS Thermal Resistance Junction to Case RθJC Thermal Resistance Junction to Ambient RθJA TEST CONDITIONS VDS = 25V, VGS = 0V, f = 1MHz (Figure 11) Measured Between the Contact Screw on the Flange that is Closer to Source and Gate Pins and the Center of Die Modified MOSFET Symbol Showing the Internal Devices Inductances D LD Measured From The Source Lead, 6mm (0.25in) From the Flange and the Source Bonding Pad G LS S Free Air Operation Source to Drain Diode Specifications PARAMETER Continuous Source to Drain Current Pulse Source to Drain Current (Note 3) SYMBOL ISD ISDM TEST CONDITIONS Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Diode D G S Source to Drain Diode Voltage (Note 2) Reverse Recovery Time Reverse Recovered Charge VSD NOTES: 2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%. 3. Repetitive rating: pulse width limited by max junction temperature. See Transient Thermal Impedance curve (Figure 3). 4. VDD = 20V, starting TJ = 25oC, L = 3.37mH, RG = 50Ω, peak IAS = 9A. See Figures 15, 16. 3 IRF230, IRF231, IRF232, IRF233 Typical Performance Curves Unless Otherwise Specified POWER DISSIPATION MULTIPLIER 1.2 10 ID, DRAIN CURRENT (A) 1.0 0.8 0.6 0.4 IRF230, IRF231 6 IRF232, IRF233 4 2 0.2 0 8 0 0 50 100 150 25 50 TC, CASE TEMPERATURE (oC) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE ZθJC, TRANSIENT THERMAL IMPEDANCE 75 125 100 150 TC, CASE TEMPERATURE (oC) FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 2 1.0 0.5 PDM 0.2 0.1 0.1 t1 0.05 0.02 0.01 NOTES: SINGLE PULSE DUTY FACTOR: D = t1/t2 t2 PEAK TJ= PDM x ZθJC + TC 0.01 10-5 10-4 10-3 0.1 10-2 1 10 t1, RECTANGULAR PULSE DURATION (s) FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE 100 IRF230,1 10µs IRF232, 3 100µs 1ms OPERATION IN THIS AREA IS LIMITED BY rDS(ON) 1 10ms 100ms DC IRF231, 3 80µs PULSE TEST 7V 16 12 VGS = 6V 8 5V 4 IRF230, 2 0 0.1 1 10V 8V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) IRF232, 3 10 20 TC = 25oC TJ = MAX RATED SINGLE PULSE IRF230,1 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V) 1000 FIGURE 4. FORWARD BIAS SAFE OPERATING AREA 4V 0 20 40 60 80 VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 5. OUTPUT CHARACTERISTICS 4 100 IRF230, IRF231, IRF232, IRF233 Typical Performance Curves Unless Otherwise Specified (Continued) 10 10 VDS > ID(ON) x rDS(ON)MAX 80µs PULSE TEST 10V 9V 8V 7V 6V 8 6 8 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 80µs PULSE TEST VGS = 5.0V 4 2 6 125oC 25oC -55oC 4 2 4.0V 0 0 0 1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V) 5 0 1 FIGURE 6. SATURATION CHARACTERISTICS 2.2 NORMALIZED DRAIN TO SOURCE ON RESISTANCE rDS(ON), DRAIN TO SOURCE ON RESISTANCE (Ω) VGS = 10V 0.6 VGS = 20V 0.2 0 0 10 20 30 3 4 6 5 7 FIGURE 7. TRANSFER CHARACTERISTICS 0.8 80µs PULSE TEST 2 VGS, GATE TO SOURCE VOLTAGE (V) 1.8 1.4 1.0 0.6 0.2 -60 40 ID = 3.5A VGS = 10V -40 -20 0 20 60 40 80 100 120 140 TJ, JUNCTION TEMPERATURE (oC) ID, DRAIN CURRENT (A) NOTE: Heating effect of 2µs pulse is minimal. FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT 2000 ID = 250µA 1.15 C, CAPACITANCE (pF) NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE 1.25 FIGURE 9. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 1.05 0.95 0.85 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS ≈ CDS + CGD 1600 1200 800 CISS 400 COSS CRSS 0.75 -40 0 40 80 120 0 160 TJ, JUNCTION TEMPERATURE (oC) FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE 1 10 20 30 40 VDS, DRAIN TO SOURCE VOLTAGE (V) 50 FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE 5 IRF230, IRF231, IRF232, IRF233 Typical Performance Curves Unless Otherwise Specified (Continued) 102 10 ISD, SOURCE TO DRAIN CURRENT (A) 8 TJ = -55oC 6 TJ = 25oC TJ = 125oC 4 2 10 TJ = 150oC TJ = 25oC 1 0 0 2 4 6 ID, DRAIN CURRENT (A) 8 0 10 FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT 1 2 3 VSD, SOURCE TO DRAIN VOLTAGE (V) FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE 20 VGS, GATE TO SOURCE VOLTAGE (V) gfs, TRANSCONDUCTANCE (S) 80µs PULSE TEST ID = 9A VDS = 160V VDS = 100V VDS = 40V 15 10 5 0 0 8 16 24 32 Qg(TOT), TOTAL GATE CHARGE (nC) FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE 6 4 IRF230, IRF231, IRF232, IRF233 Test Circuits and Waveforms VDS BVDSS L tP VARY tP TO OBTAIN + RG REQUIRED PEAK IAS VDS IAS VDD VDD - VGS DUT tP 0V IAS 0 0.01Ω tAV FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. UNCLAMPED ENERGY WAVEFORMS tON tOFF td(ON) td(OFF) tf tr RL VDS 90% 90% + RG - VDD 10% 0 10% DUT 90% VGS VGS 0 FIGURE 18. RESISTIVE SWITCHING WAVEFORM VDS (ISOLATED SUPPLY) CURRENT REGULATOR 0.2µF 50% PULSE WIDTH 10% FIGURE 17. SWITCHING TIME TEST CIRCUIT 12V BATTERY 50% VDD Qg(TOT) SAME TYPE AS DUT 50kΩ Qgd 0.3µF VGS Qgs D VDS DUT G 0 Ig(REF) S 0 IG CURRENT SAMPLING RESISTOR VDS ID CURRENT SAMPLING RESISTOR IG(REF) 0 FIGURE 19. GATE CHARGE TEST CIRCUIT FIGURE 20. GATE CHARGE WAVEFORMS 7