Bulletin I27121 rev. B 07/02 GA200HS60S "HALF-BRIDGE" IGBT INT-A-PAK Standard Speed IGBT Features VCES = 600V • Generation 4 IGBT Technology • Standard speed: optimized for hard switching operating frequencies up to 1000 Hz • Very Low Conduction Losses • Industry standard package VCE(on) typ. = 1.19V @ VGE = 15V, IC = 200A TJ = 25°C Benefits • Increased operating efficiency • Direct mounting to heatsink • Performance optimized as output inverter stage for TIG welding machines INT-A-PAK Absolute Maximum Ratings Parameters VCES Collector-to-Emitter Voltage IC Continuos Collector Current Max Units 600 V @ TC = 25°C 470 A @ TC = 110°C 200 ICM Pulsed Collector Current ILM Peak Switching Current 800 VGE Gate-to-Emitter Voltage ± 20 VISOL RMS Isolation Voltage, Any Terminal to Case, t = 1 min 2500 PD Maximum Power Dissipation www.irf.com 800 @ TC = 25°C 830 @ TC = 85°C 430 V W 1 GA200HS60S Bulletin I27121 rev. B 07/02 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameters Min Typ Max Units Test Conditions VCES V CE(on) Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Voltage 600 V GE(th) Gate Threshold Voltage I CES Collector-to-Emiter Leakage Current I GES Gate-to-Emitter Leakage Current V 1.19 1.17 3 V GE = 0V, I C = 1mA V GE = 15V, I C = 200A 1.25 - V GE = 15V, I C = 200A, T J = 125°C 6 I C = 0.5mA 1 10 mA V GE = 0V, V CE = 600V V GE = 0V, V CE = 600V, T J = 125°C ± 250 nA V GE = ± 20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameters Qg Qge Qgc Eon Eoff Ets Eon Eoff Ets Cies Coes Cres Min Typ Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Input Capacitance Output Capacitance Reverse Transfer Capacitance Max Units Test Conditions 1600 1700 260 340 580 670 27 47 74 29 31 77 90 106 121 32500 2080 380 nC IC = 200A VCC = 400V VGE = 15V mJ IC = 200A, VCC = 480V, VGE = 15V Rg = 10Ω free-wheeling DIODE: 30ETH06 mJ IC = 200A, VCC = 480V, VGE = 15V Rg = 10Ω free-wheeling DIODE: 30ETH06, TJ = 125°C pF VGE = 0V VCC = 30V f = 1.0 MHz Thermal- Mechanical Specifications Parameters Typ Max Units °C TJ Operating Junction Temperature Range - 40 150 TSTG Storage Temperature Range - 40 125 RthJC Junction-to-Case RthCS Case-to-Sink T Mounting torque Weight 2 Min 0.15 °C/ W Case to heatsink 4 Nm Case to terminal 1, 2, 3 3 0.1 185 g www.irf.com GA200HS60S Bulletin I27121 rev. B 07/02 1000 Vge = 15V 100 T J = 25˚C T J = 125˚C 10 0.5 0.7 0.9 1.1 1.3 1.5 T J = 125˚C 100 T J = 25˚C 10 Vce = 10V 380µs PULSE WIDTH 1 1.7 5 6 7 VCE, Collector-to-Emitter Voltage (V) VGE, Gate-to-Emitter Voltage (V) Fig. 1 - Typical Output Characteristics Fig. 2 - Typical Transfer Characteristics 520 480 440 400 360 320 280 240 200 160 120 80 40 0 25 8 2 VCE, Collector-to-Emitter Voltage (V) Maximum DC Collector Current (A) IC , Collector-to-Emitter Current (A) IC, Collector-to-Emitter Current (A) 1000 50 75 100 125 150 I C = 400A 1.5 I C = 200A I = 120A C 1 0.5 20 40 60 80 100 120 140 160 TC, Case Temperature (°C) TJ , Junction Temperature (°C) Fig. 3 - Maximum Collector Current vs. Case Temperature Fig. 4 - Typical Collector-to-Emitter Voltage vs. Junction Temperature www.irf.com 3 GA200HS60S Bulletin I27121 rev. B 07/02 80 Tj = 25˚C, Vce = 480V 70 Vge = 15V, Ic = 200A free-wheeling diode: 30ETH06 Vcc = 400V Ic = 200A 12 Switching Losses (mJ) VGE, Gate-to-Emitter Voltage (V) 16 8 4 60 Eoff 50 40 Eon 30 20 10 0 0 300 600 0 900 1200 1500 1800 10 20 30 40 QG, Total Gate Charge (nC) RG, Gate Reistance (Ω) Fig. 5 - Typical Gate Charge vs. Gate-toEmitter Voltage Fig. 6 - Typical Switching Losses vs Gate Resistance 50 80 Tj = 125˚C 70 Vce = 480V Switching Losses (mJ) Vge = 15V Eoff 60 Rge = 10 Ω Free-wheeling diode: 30ETH06 50 40 30 Eon 20 10 0 0 40 80 120 160 200 IC, Collector-to-Emitter Current (A) Fig. 7 - Typical Switching Losses vs Collector-to-Emitter Current 4 www.irf.com GA200HS60S Bulletin I27121 rev. B 07/02 Outline Table Functional Diagram Electrical Diagram Dimensions in millimeters Note: terminals 9 and 11 are not internally connected terminals 8 and 10 are not assembled in the package www.irf.com 5 GA200HS60S Bulletin I27121 rev. B 07/02 Ordering Information Table Device Code GA 200 1 2 H S 60 S 3 4 5 6 1 - Essential Part Number IGBT modules 2 - Current rating 3 - Circuit Configuration (H = Half Bridge without f/w diode) 4 - Int-A-Pak 5 - Voltage Code (60 = 600V) 6 - Speed/ Type (S = Standard Speed IGBT) (200 = 200A) Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 07/02 6 www.irf.com