PD -50051D GA400TD25S "HALF-BRIDGE" IGBT DUAL INT-A-PAK Standard Speed IGBT Features VCES = 250V • Generation 4 IGBT technology • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz • Very low conduction and switching losses • HEXFRED™ antiparallel diodes with ultra- soft recovery • Industry standard package • UL approved VCE(on) typ. = 1.3V @VGE = 15V, IC = 400A Benefits • Increased operating efficiency • Direct mounting to heatsink • Performance optimized for power conversion: UPS, SMPS, Welding • Lower EMI, requires less snubbing Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C ICM ILM IFM VGE VISOL PD @ TC = 25°C PD @ TC = 85°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Pulsed Collector CurrentQ Peak Switching CurrentR Peak Diode Forward Current Gate-to-Emitter Voltage RMS Isolation Voltage, Any Terminal To Case, t = 1 min Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Range Storage Temperature Range Max. Units 250 400 800 800 800 ±20 2500 1350 700 -40 to +150 -40 to +125 V A V W °C Thermal / Mechanical Characteristics Parameter RθJC RθJC RθCS www.irf.com Thermal Resistance, Junction-to-Case - IGBT Thermal Resistance, Junction-to-Case - Diode Thermal Resistance, Case-to-Sink - Module Mounting Torque, Case-to-Heatsink S Mounting Torque, Case-to-Terminal 1, 2 & 3S Weight of Module Typ. Max. — — 0.1 — — 400 0.09 0.20 — 6.0 5.0 — Units °C/W N. m g 1 05/15/02 GA400TD25S Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Collector-to-Emitter Breakdown Voltage 250 — — VGE = 0V, IC = 1mA Collector-to-Emitter Voltage — 1.3 1.6 VGE = 15V, IC = 400A — 1.3 — V VGE = 15V, IC = 400A, TJ = 125°C Gate Threshold Voltage 3.0 — 6.0 IC = 3.0mA VGE(th) ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage — -11 — mV/°C VCE = VGE, IC = 2.5mA gfe Forward TransconductanceT — 371 — S VCE = 25V, IC = 400A ICES Collector-to-Emitter Leaking Current — — 0.50 mA VGE = 0V, VCE = 250V — — 20 VGE = 0V, VCE = 250V, T J = 125°C VFM Diode Forward Voltage - Maximum — 1.7 2.2 V IF = 500A, V GE = 0V — 1.7 — IF = 500A, VGE = 0V, TJ = 125°C IGES Gate-to-Emitter Leakage Current — — 500 nA VGE = ±20V V(BR)CES VCE(on) Dynamic Characteristics - TJ = 125°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets Cies Coes Cres trr Irr Q rr di(rec)M/dt 2 Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Energy Turn-Off Switching Energy Total Switching Energy Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak ReverseCurrent Diode Recovery Charge Diode Peak Rate of Fall of Recovery During tb Min. — — — — — — — — — — — — — — — — — Typ. 1600 232 528 1250 365 841 792 6.0 38 45 36000 4080 800 229 71 8154 911 Max. Units Conditions 2400 VCC = 200V 348 nC IC = 440A 792 TJ = 25°C — RG1 = 15Ω, RG2 = 0Ω, — ns IC = 400A — VCC = 150V — VGE = ±15V — mJ See Fig.17 through Fig.21 — 52 — VGE = 0V — pF VCC = 30V — ƒ = 1 MHz — ns IC = 400A — A RG1 = 15Ω — nC RG2 = 0Ω — A/µs VCC = 150V di/dt»1400A/µs www.irf.com GA400TD25S Load Current ( A ) 300 D u ty c y c le : 5 0 % T J = 12 5°C T sink = 9 0 ° C G a te d riv e a s s p e c ifie d 200 P o w e r D is s ip a tio n = 1 8 4 W S q u a re w a v e : 6 0 % o f ra te d v o lta g e 100 Id eal diod es A 0 0.1 1 10 100 f, Frequency (kHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 1000 oC 125°C TJ = 150 oC 125°C TJ = 150 I C , Collector-to-Emitter Current (A) I C , Collector-to-Emitter Current (A) 1000 TJ = 25 o C 100 TJ = 25 oC V = 15V 20µs PULSE WIDTH GE 80µs 100 1.0 1.5 2.0 VCE , Collector-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics www.irf.com V = 50V 5µs PULSE WIDTH CC CE 80µs 10 5 6 25V 7 8 VGE , Gate-to-Emitter Voltage (V) Fig. 3 - Typical Transfer Characteristics 3 GA400TD25S 500 2.0 V = 15V 80 us PULSE WIDTH VCE , Collector-to-Emitter Voltage(V) Maximum DC Collector Current ( A ) GE 400 300 200 100 A 0 25 50 75 100 125 150 IC = 800 A 1.5 IC = 400 A IC = 200 A 1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( ° C) TC , Case Temperature (°C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature T h e rm a l R e s p o n s e (Z th JC ) 0.1 D = 0.5 0 0.20 0.10 0.01 0.001 0.0001 PDM 0.05 t 0.0 2 0.0 1 S IN G LE P U LS E (T H E R M A L R E S P O N S E ) 1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.001 0.01 0.1 1 10 100 A 1000 t 1 , R e cta ng ula r P u lse D u ratio n (se c) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com GA400TD25S VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc C, Capacitance (pF) 50000 Cies 40000 30000 20000 Coes 10000 Cres 20 VGE , Gate-to-Emitter Voltage (V) 60000 0 1 10 12 8 4 0 100 0 Total Switching Losses (mJ) Total Switching Losses (mJ) 1000 50 45 40 35 30 20 30 RRG ,, Gate GateResistance Resistance( (Ohm) Ω) G Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com 800 1200 1600 Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage V CC = 150V V GE = 15V °C 125°C TJ = 25 55 I C = 400A 10 400 QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage 0 VCC V 400V CC = 200V I C = 440A 16 VCE , Collector-to-Emitter Voltage (V) 60 40 RG1 Ω;RG2 = 0 Ω = Ohm G =15 VGE = 15V VCC = 150V IC = 800 A 100 IC = 400 A IC = 200 A 10 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature (° C ) Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 GA400TD25S 100 1000 IC , Collector-to-Emitter Current ( A ) Total Switching Losses (mJ) RG1 Ω;RG2 = 0 Ω = Ohm G =15 T J =125°C 150 ° C VCC = 150V 80 VGE = 15V 60 40 20 V GGE E = 20V T J = 125°C V C E m easured at term inal (Peak V oltage) 800 600 SAFE OPERATING AREA 400 200 0 A 0 0 200 400 600 800 1000 0 I C , Collector-to-emitter Current (A) 100 200 300 VCE , Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Reverse Bias SOA 12000 1000 I F = 800A Instantaneous Forward Current - IF ( A ) I F = 400A 10000 TJ = 12 5°C I F = 200A 8000 QRR - ( nC) TJ = 25 °C 100 6000 4000 2000 A 10 0.0 0.5 1.0 1.5 2.0 2.5 F o rw a rd V o lta g e D ro p - V F M ( V ) Fig. 13 - Typical Forward Voltage Drop vs. Instantaneous Forward Current 6 VR = 15 0V T J = 1 25 °C T J = 2 5°C 0 400 500 A 600 700 800 900 di f /dt - (A/µ s) Fig. 14 - Typical Stored Charge vs. dif/dt www.irf.com GA400TD25S 100 300 I F = 800A I F = 800A I F = 400A I F = 400A 80 I F = 200A I F = 200A trr - ( ns ) IRRM - ( A ) 200 60 40 100 20 0 400 VR = 15 0V T J = 1 25 °C T J = 2 5°C 500 A 600 700 800 900 di f /dt - (A/µ s) Fig. 15 - Typical Reverse Recovery vs. dif/dt www.irf.com V R = 15 0V T J = 12 5 °C T J = 25 °C 0 400 500 A 600 700 800 900 di f /dt - (A/µ s) Fig. 16 - Typical Recovery Current vs. dif/dt 7 GA400TD25S 90% Vge +Vge Vce Ic 9 0 % Ic 10% Vce Ic 5 % Ic td (o ff) tf Eoff = ∫ Vce Ic dt t1 + 5 µ S V c e ic d t t1 Fig. 17 - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf t1 t2 Fig. 18 - Test Waveforms for Circuit of Fig. 17, Defining Eoff, td(off), tf G A T E V O L T A G E D .U .T . 1 0 % +V g trr Q rr = Ic ∫ trr id t Icddt tx +Vg tx 10% Vcc 1 0 % Irr V cc D UT VO LTAG E AN D CU RRE NT Vce V pk Irr Vcc 1 0 % Ic Ip k 9 0 % Ic Ic D IO D E R E C O V E R Y W A V E FO R M S tr td (o n ) 5% Vce t1 ∫ t2 ce ieIcd t dt E o n = VVce t1 t2 E re c = D IO D E R E V E R S E REC OVERY ENER GY t3 Fig. 19 - Test Waveforms for Circuit of Fig. 17, Defining Eon, td(on), tr 8 ∫ t4 VVd d idIc d t dt t3 t4 Fig. 20 - Test Waveforms for Circuit of Fig. 17, Defining Erec, trr, Qrr, Irr www.irf.com GA400TD25S V g G A T E S IG N A L D E V IC E U N D E R T E S T C U R R E N T D .U .T . V O L T A G E IN D .U .T . C U R R E N T IN D 1 t0 t1 t2 Figure 21. Macro Waveforms for Figure 17's Test Circuit RL= 150V 4 X IC @25°C 0 - 480V Figure 22. Pulsed Collector Current TestCircuit www.irf.com 9 GA400TD25S Notes: Q Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. R See fig. 17 S For screws M6. T Pulse width 80µs; single shot. Case Outline — DUAL INT-A-PAK 4.185] [4.224 93.30 3.673 92.70 [3.650] 107.30 106.30 3X M6 8 [.314] MAX. NOT ES: 1. ALL DIMENSIONS ARE SHOWN IN MILLIMET ERS [INCHES]. 2. CONT ROLLING DIMENS ION: MILLIMET ER. 28.60 2X 27.40 1.079] [1.126 4X 6.60 5.40 6 7 11 10 48.30 47.70 .213] [.260 1.878] [1.902 2 1 8 9 3 5 4 2X 15.59 14.39 6.80 4X Ø 6.20 .567] [.614 4X FAS T ON T AB (110) 2.8 x 0.5 [.110 x .020] [ ] .267 .244 48.50 47.50 1.870] [1.909 8.00 6.60 .260] [.315 31.00 29.60 5.50 4.50 [ ] .217 .177 24.00 23.00 1.165] [1.220 .906] [.945 2.303] [2.343 62.70 2.468 61.70 [2.429] 59.50 58.50 0.15 [.0059] CONVEX 104.50 103.50 4.075] [4.114 Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.05/02 10 www.irf.com