SMBTA63, SMBTA64 PNP Silicon Darlington Transistors 3 High collector current High DC current gain 2 1 Type Marking Pin Configuration SMBTA63 s2U 1=B 2=E 3=C SOT23 SMBTA64 s2V 1=B 2=E 3=C SOT23 VPS05161 Package Maximum Ratings Parameter Symbol Collector-emitter voltage VCES 30 Collector-base voltage VCBO 30 Emitter-base voltage VEBO 10 DC collector current IC 500 mA Peak collector current ICM 800 A Base current IB 100 mA Peak base current IBM 200 Total power dissipation, TS = 81 °C Ptot 330 mW Junction temperature Tj 150 °C Storage temperature Tstg Value Unit V -65 ... 150 Thermal Resistance Junction - soldering point 1) RthJS 210 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Nov-30-2001 SMBTA63, SMBTA64 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. V(BR)CES 30 - - V(BR)CBO 30 - - V(BR)EBO 10 - - ICBO - - 100 nA ICBO - - 10 µA IEBO - - 100 nA DC Characteristics Collector-emitter breakdown voltage V IC = 10 µA, VBE = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 30 V, IE = 0 Collector cutoff current VCB = 30 V, IE = 0 , TA = 150 °C Emitter cutoff current VEB = 10 V, IC = 0 hFE DC current gain 1) IC = 10 mA, VCE = 5 V IC = 100 mA, VCE = 5 V - SMBTA63 5000 - - SMBTA64 10000 - - SMBTA63 10000 - - SMBTA64 20000 - - VCEsat - - 1.5 VBEsat - - 2 125 - - Collector-emitter saturation voltage1) V IC = 100 mA, IB = 0.1 mA Base-emitter saturation voltage 1) IC = 100 mA, IB = 0.1 mA AC Characteristics fT Transition frequency MHz I C = 50 mA, V CE = 5 V, f = 20 MHz 1) Pulse test: t ≤ 300µs, D = 2% 2 Nov-30-2001 SMBTA63, SMBTA64 Total power dissipation Ptot = f(TS) Collector-base capacitance CCB = f (VCBO Emitter-base capacitance CEB = f (VEBO) 400 C CB0 ( C EB0 ) mW 12 pF BC 846...850 EHP00361 10 320 P tot 280 8 C EB 240 6 200 160 4 C CB 120 80 2 40 0 0 15 30 45 60 75 90 105 120 0 10 -1 °C 150 TS 5 10 0 V VCB0 Permissible pulse load Transition frequency fT = f (IC) Ptotmax / PtotDC = f (tp ) VCE = 5V EHP00362 10 3 Ptot max Ptot DC EHP00363 10 3 MHz tp tp D= T 10 1 (VEB0 ) fT 5 T 10 2 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 10 1 10 2 5 5 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 10 1 10 -1 0 5 10 0 5 10 1 mA 10 2 ΙC tp 3 Nov-30-2001 SMBTA63, SMBTA64 Base-emitter saturation voltage Collector-emitter saturation voltage IC = f (VBEsat ), hFE = 20 IC = f (VCEsat), h FE = 20 EHP00364 10 2 ΙC Ι C mA 100 C 25 C -50 C 10 1 EHP00215 10 3 mA 150 ˚C 25 ˚C -50 ˚C 10 2 5 5 10 1 5 10 0 10 0 5 5 10 -1 10 -1 0 0.2 0.4 0.6 V 0.8 1.2 0 0.2 0.4 0.6 Collector cutoff current ICBO = f (TA ) DC current gain hFE = f (I C) VCB = 30V VCE = 5V Ι CB0 EHP00415 nA max 10 100 C 25 C 5 10 2 -50 C 5 typ 2 EHP00365 10 3 h FE 5 10 3 0.8 V CEsat V BEsat 10 4 V 5 10 1 10 1 5 5 10 0 0 50 100 ˚C 10 0 10 -2 150 5 10 -1 5 10 0 5 10 1 mA 10 2 ΙC TA 4 Nov-30-2001