BCV27, BCV47 NPN Silicon Darlington Transistors 3 For general AF applications High collector current High current gain Complementary types: BCV26, BCV46 (PNP) 2 1 Type Marking Pin Configuration BCV27 FFs 1=B 2=E 3=C SOT23 BCV47 FGs 1=B 2=E 3=C SOT23 VPS05161 Package Maximum Ratings Parameter Symbol Collector-emitter voltage Unit BCV27 BCV47 VCEO 30 60 Collector-base voltage VCBO 40 80 Emitter-base voltage VEBO 10 10 DC collector current IC 500 mA Peak collector current ICM 800 mA Base current IB 100 Peak base current IBM 200 Total power dissipation, TS = 74 °C Ptot 360 mW Junction temperature Tj 150 °C Storage temperature Tstg V -65 ... 150 Thermal Resistance Junction - soldering point 1) RthJS 210 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Jul-12-2001 BCV27, BCV47 Electrical Characteristics at T A = 25°C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. DC Characteristics Collector-emitter breakdown voltage I C = 10 mA, I B = 0 BCV27 30 - - BCV47 60 - - BCV27 40 - - BCV47 80 - - 10 - - Collector-base breakdown voltage I C = 100 µA, IB = 0 V V (BR)CEO V (BR)CBO Emitter-base breakdown voltage V (BR)EBO I E = 10 µA, I C = 0 Collector cutoff current nA I CBO VCB = 30 V, I E = 0 BCV27 - - 100 VCB = 60 V, I E = 0 BCV47 - - 100 Collector cutoff current µA I CBO VCB = 30 V, I E = 0 , T A = 150 °C BCV27 - - 10 VCB = 60 V, I E = 0 , T A = 150 °C BCV47 - - 10 - - 100 Emitter cutoff current I EBO nA VEB = 4 V, I C = 0 DC current gain 1) I C = 100 µA, V CE = 1 V BCV27 4000 - - BCV47 2000 - - BCV27 10000 - - BCV47 4000 - - BCV27 20000 - - BCV47 10000 - - BCV27 4000 - - BCV47 2000 - - DC current gain 1) I C = 10 mA, VCE = 5 V hFE DC current gain 1) I C = 100 mA, V CE = 5 V hFE DC current gain 1) I C = 0.5 A, V CE = 5 V - hFE hFE 1) Pulse test: t ≤ 300µs, D = 2% 2 Jul-12-2001 BCV27, BCV47 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. VCEsat - - 1 VBEsat - - 1.5 fT - 170 - MHz Ccb - 3.5 - pF DC Characteristics Collector-emitter saturation voltage1) V IC = 100 mA, IB = 0.1 mA Base-emitter saturation voltage 1) IC = 100 mA, IB = 0.1 mA AC Characteristics Transition frequency IC = 50 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz 1) Pulse test: t ≤ 300µs, D = 2% 3 Jul-12-2001 BCV27, BCV47 Total power dissipation Ptot = f(TS) Collector-base capacitance CCB = f (VCBO) Emitter-base capacitance CEB = f (VEBO) 400 10 BCV 27/47 EHP00300 CEB0 (CCB0 ) mW pF P tot 300 250 CCB0 5 200 CEB0 150 100 50 0 0 15 30 45 60 75 90 105 120 0 10 -1 °C 150 TS V 10 1 V EB0 (V CB0 ) 10 0 Permissible pulse load Transition frequency fT = f (IC) Ptotmax / PtotDC = f (tp ) VCE = 5V 10 3 BCV 27/47 EHP00301 Ptot max 5 Ptot DC 10 3 EHP00303 MHz tp tp D= T BCV 27/47 fT T 10 2 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 10 1 10 2 5 5 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 10 1 10 0 0 10 1 10 2 mA 10 3 ΙC tp 4 Jul-12-2001 BCV27, BCV47 Base-emitter saturation voltage Collector-emitter saturation voltage IC = f (VBEsat ), hFE = 1000 IC = f (VCEsat), h FE = 1000 10 3 ΙC BCV 27/47 EHP00304 10 3 mA EHP00305 Ι C mA 150 ˚C 25 ˚C -50 ˚C 10 2 5 10 1 10 1 5 5 0 1.0 150 ˚C 25 ˚C -50 ˚C 10 2 5 10 0 BCV 27/47 2.0 V 10 0 3.0 0 0.5 1.0 Collector cutoff current ICBO = f (TA ) DC current gain hFE = f (I C) VCB = VCEmax VCE = 5V BCV 27/47 1.5 V CEsat V BEsat 10 4 V EHP00306 10 6 nA Ι CBO h FE BCV 27/47 EHP00307 5 max 10 3 10 5 125 ˚C 25 ˚C 5 10 2 -55 ˚C typ 10 4 10 1 10 0 5 0 50 100 ˚C 10 3 10 -1 150 10 0 10 1 10 2 mA 10 3 ΙC TA 5 Jul-12-2001