BCX42, BSS63 PNP Silicon AF an Swiching Transistors 3 For general AF applications High breakdown voltage Low collector-emitter saturation voltage Complementary types: BCX41, BSS64 (NPN) 2 1 Type Marking Pin Configuration BCX42 DKs 1=B 2=E 3=C SOT23 BSS63 BMs 1=B 2=E 3=C SOT23 VPS05161 Package Maximum Ratings Parameter Symbol Collector-emitter voltage Unit BSS63 BCX42 VCEO 100 125 Collector-base voltage VCBO 110 125 Emitter-base voltage VEBO 5 5 DC collector current IC Peak collector current ICM Base current IB 100 Peak base current IBM 200 Total power dissipation, TS = 79 °C Ptot 330 mW Junction temperature Tj 150 °C Storage temperature Tstg 800 1 V mA A mA -65 ... 150 Thermal Resistance Junction - soldering point 1) RthJS 215 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Jul-10-2001 BCX42, BSS63 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 BSS63 100 - - BCX42 125 - - BSS63 110 - - BCX42 125 - - 5 - - Collector-base breakdown voltage IC = 100 µA, IB = 0 V V(BR)CEO V(BR)CBO Emitter-base breakdown voltage V(BR)EBO IE = 10 µA, IC = 0 Collector cutoff current nA ICBO VCB = 80 V, IE = 0 BSS63 - - 100 VCB = 100 V, IE = 0 BCX42 - - 100 Collector cutoff current µA ICBO VCB = 80 V, IE = 0 , TA = 150 °C BSS63 - - 20 VCB = 100 V, IE = 0 , TA = 150 °C BCX42 - - 20 - - 100 Emitter cutoff current IEBO nA VEB = 4 V, IC = 0 Collector cutoff current µA ICEO VCE = 100 V, TA = 85 °C BCX42 - - 10 VCE = 100 V, TA = 125 °C BCX42 - - 75 DC current gain 1) - hFE IC = 100 µA, VCE = 1 V BCX42 25 - - IC = 10 mA, VCE = 5 V BSS63 30 - - IC = 20 mA, VCE = 5 V BSS63 30 - - IC = 100 mA, VCE = 1 V BCX42 63 - - IC = 200 mA, VCE = 1 V BCX42 40 - - 1) Pulse test: t ≤ 300µs, D = 2% 2 Jul-10-2001 BCX42, BSS63 Electrical Characteristics at TA = 25°C, unless otherwise specified. Symbol Values Parameter min. typ. Unit max. DC Characteristics Collector-emitter saturation voltage1) V VCEsat IC = 300 mA, IB = 30 mA BCX42 - - 0.9 IC = 25 mA, IB = 2.5 mA BSS63 - - 0.25 IC = 75 mA, IB = 7.5 mA BSS63 - - 0.9 VBEsat - - 1.4 fT - 150 - MHz Ccb - 12 - pF Base-emitter saturation voltage 1) IC = 300 mA, IB = 30 mA BCX42 AC Characteristics Transition frequency IC = 20 mA, VCE = 5 V, f = 20 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz 3 Jul-10-2001 BCX42, BSS63 Total power dissipation Ptot = f(TS) Collector current I C = f (VBE) VCE = 1V 10 3 360 mW EHP00429 mA ΙC 300 P tot BCX 42/BSS 63 270 10 2 240 5 TA = 150 ˚C 25 ˚C -50 ˚C 210 180 10 1 150 5 120 0 10 90 5 60 30 0 0 10 -1 15 30 45 60 75 90 105 120 °C 150 TS 0 1 2 VBE Permissible pulse load Transition frequency fT = f (IC) Ptotmax / PtotDC = f (tp ) VCE = 5V 10 3 BCX 42/BSS 63 Ptot max 5 Ptot DC EHP00430 D= tp T 10 3 fT D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 10 1 BCX 42/BSS 63 EHP00431 MHz tp T 10 2 3 V 5 10 2 5 5 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 1 10 0 10 0 5 10 1 5 10 2 mA 10 3 ΙC tp 4 Jul-10-2001 BCX42, BSS63 Base-emitter saturation voltage Collector-emitter saturation voltage IC = f (VBEsat ), hFE = 10 IC = f (VCEsat), h FE = 10 BCX 42/BSS 63 10 3 EHP00432 10 3 BCX 42/BSS 63 mA mA ΙC 150 ˚C 25 ˚C -50 ˚C ΙC 10 2 10 5 2 5 150 ˚C 25 ˚C -50 ˚C 10 1 10 5 10 EHP00433 1 5 0 10 5 0 5 10 -1 0 1 2 V 10 -1 3 0 200 400 600 mV 800 VBE sat VCE sat Collector cutoff current ICBO = f (TA) DC current gain hFE = f (I C) VCB = 100V VCE = 1V 10 4 nA Ι CB0 BCX 42/BSS 63 EHP00434 10 3 max 10 3 h FE BCX 42/BSS 63 5 5 150 ˚C 25 ˚C 10 2 -50 ˚C 5 10 2 typ 10 1 5 10 EHP00435 5 0 5 10 -1 0 50 100 ˚C 10 1 10 -1 150 5 10 0 5 10 1 5 10 2 mA 10 3 ΙC TA 5 Jul-10-2001