BCW65, BCW66 NPN Silicon AF Transistor 3 For general AF applications High current gain Low collector-emitter saturation voltage Complementary types: BCW67, BCW68 (PNP) 2 1 Type Marking Pin Configuration BCW65A EAs 1=B 2=E 3=C SOT23 BCW65B EBs 1=B 2=E 3=C SOT23 BCW65C ECs 1=B 2=E 3=C SOT23 BCW66F EFs 1=B 2=E 3=C SOT23 BCW66G EGs 1=B 2=E 3=C SOT23 BCW66H EHs 1=B 2=E 3=C SOT23 VPS05161 Package Maximum Ratings Parameter Symbol Collector-emitter voltage Unit BCW65 BCW66 VCEO 32 45 Collector-base voltage VCBO 60 75 Emitter-base voltage VEBO 5 5 DC collector current IC Peak collector current ICM Base current IB 100 Peak base current IBM 200 Total power dissipation, TS = 79 °C Ptot 330 mW Junction temperature Tj 150 °C Storage temperature Tstg 800 1 V mA A mA -65 ... 150 Thermal Resistance Junction - soldering point1) RthJS 215 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Jul-10-2001 BCW65, BCW66 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 BCW65 32 - - BCW66 45 - - BCW65 60 - - BCW66 75 - - 5 - - Collector-base breakdown voltage IC = 10 µA, IB = 0 V V(BR)CEO V(BR)CBO Emitter-base breakdown voltage V(BR)EBO IE = 10 µA, IC = 0 Collector cutoff current nA ICBO VCB = 32 V, IE = 0 BCW65 - - 20 VCB = 45 V, IE = 0 BCW66 - - 20 Collector cutoff current µA ICBO VCB = 32 V, IE = 0 , TA = 150 °C BCW65 - - 20 VCB = 45 V, IE = 0 , TA = 150 °C BCW66 - - 20 - - 20 Emitter cutoff current IEBO nA VEB = 4 V, IC = 0 DC current gain 1) IC = 100 µA, VCE = 10 V hFE -grp.A/F 35 - - hFE -grp.B/G 50 - - hFE -grp.C/H 80 - - hFE -grp.A/F 75 - - hFE -grp.B/G 110 - - hFE -grp.C/H 180 - - hFE -grp.A/F 100 160 250 hFE -grp.B/G 160 250 400 hFE -grp.C/H 250 350 630 DC current gain 1) IC = 10 mA, VCE = 1 V hFE DC current gain 1) IC = 100 mA, VCE = 1 V - hFE hFE 1) Pulse test: t ≤ 300µs, D = 2% 2 Jul-10-2001 BCW65, BCW66 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. DC Characteristics DC current gain 1) IC = 500 mA, VCE = 2 V - hFE hFE -grp.A/F - 35 - hFE -grp.B/G - 60 - hFE -grp.C/H - 100 - Collector-emitter saturation voltage1) V VCEsat IC = 100 mA, IB = 10 mA - - 0.3 IC = 500 mA, IB = 50 mA - - 0.7 IC = 100 mA, IB = 10 mA - - 1.25 IC = 500 mA, IB = 50 mA - - 2 fT - 170 - MHz Ccb - 6 - pF Ceb - 60 - Base-emitter saturation voltage 1) VBEsat AC Characteristics Transition frequency IC = 50 mA, VCE = 5 V, f = 20 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz 3 Jul-10-2001 BCW65, BCW66 Total power dissipation Ptot = f(TS) Transition frequency fT = f (IC) VCE = 5V 10 3 360 mW BCW 65/66 EHP00391 MHz fT 300 5 P tot 270 240 210 10 2 180 150 5 120 90 60 30 0 0 15 30 45 60 75 90 105 120 10 1 10 0 °C 150 TS 10 1 10 2 mA ΙC Permissible pulse load Collector cutoff current ICBO = f (T A) Ptotmax / PtotDC = f (tp ) VCB = V CEmax 10 3 BCW 65/66 EHP00392 Ptot max 5 Ptot DC D= 10 5 nA tp tp T Ι CB0 T 10 3 BCW 65/66 EHP00393 10 4 5 10 2 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 10 1 10 3 max 5 10 2 5 typ 5 10 1 5 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 10 0 0 tp 0 50 100 ˚C 150 TA 4 Jul-10-2001 BCW65, BCW66 Base-emitter saturation voltage Collector-emitter saturation voltage IC = f (VBEsat ), hFE = 10 IC = f (VCEsat), h FE = 10 10 3 BCW 65/66 EHP00394 10 3 mA BCW 65/66 EHP00395 mA 150 ˚C 25 ˚C -50 ˚C ΙC 10 2 10 2 5 5 10 1 10 1 5 5 0 0 10 10 5 5 10 -1 150 ˚C 25 ˚C -50 ˚C ΙC 0 1 2 3 V 10 -1 4 0 200 400 600 mV 800 VCE sat VBE sat DC current gain hFE = f (IC ) VCE = 1V 10 3 5 BCW 65/66 EHP00396 100 ˚C h FE 25 ˚C 10 2 -50 ˚C 5 10 1 5 10 0 10 -1 5 10 0 5 10 1 5 10 2 mA 10 3 ΙC 5 Jul-10-2001