BCX68 NPN Silicon AF Transistors 1 For general AF applications 2 High collector current 3 High current gain Low collector-emitter saturation voltage Complementary type: BCX69 (PNP) 2 VPS05162 Type Marking Pin Configuration Package BCX68 CA 1=B 2=C 3=E SOT89 BCX68-10 CB 1=B 2=C 3=E SOT89 BCX68-16 CC 1=B 2=C 3=E SOT89 BCX68-25 CD 1=B 2=C 3=E SOT89 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 20 Collector-base voltage VCBO 25 Emitter-base voltage VEBO 5 DC collector current IC 1 Peak collector current ICM 2 Base current IB 100 Peak base current IBM 200 Total power dissipation, TS = 130 °C Ptot 1 W Junction temperature Tj 150 °C Storage temperature Tstg V A mA -65 ... 150 Thermal Resistance Junction - soldering point 1) RthJS 20 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Jun-29-2001 BCX68 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. V(BR)CEO 20 - - V(BR)CBO 25 - - V(BR)EBO 5 - - ICBO - - 100 nA ICBO - - 100 µA hFE 50 - - BCX68 85 - 375 BCX68-10 85 100 160 BCX68-16 100 160 250 BCX68-25 160 250 375 60 - - - - 0.5 IC = 5 mA, VCE = 10 V - 0.6 - IC = 1 A, VCE = 1 V - - 1 - 100 - Characteristics Collector-emitter breakdown voltage V IC = 30 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IB = 0 Emitter-base breakdown voltage IE = 1 µA, IC = 0 Collector cutoff current VCB = 25 V, IE = 0 Collector cutoff current VCB = 25 V, IE = 0 , TA = 150 °C DC current gain 1) - IC = 5 mA, VCE = 10 V DC current gain 1) IC = 500 mA, VCE = 1 V hFE DC current gain 1) hFE IC = 1 A, VCE = 1 V Collector-emitter saturation voltage1) VCEsat V IC = 1 A, IB = 100 mA Base-emitter voltage 1) VBE(ON) AC Characteristics Transition frequency fT MHz IC = 100 mA, VCE = 5 V, f = 20 MHz 1) Pulse test: t ≤=300µs, D = 2% 2 Jun-29-2001 BCX68 Collector current I C = f (VBE) Total power dissipation Ptot = f(TS) VCE = 1V 10 4 1.1 W EHP00461 mA ΙC 0.9 10 3 0.8 Ptot BCX 68 5 100 ˚C 25 ˚C -50 ˚C 0.7 0.6 10 2 0.5 5 0.4 0.3 10 0.2 5 1 0.1 0 0 10 0 15 30 45 60 75 90 105 120 °C 150 TS 0 0.2 0.4 0.8 0.6 VBE Permissible pulse load Transition frequency fT = f (IC) Ptotmax / PtotDC = f (tp ) VCE = 5V 10 3 BCX 68 EHP00462 Ptot max 5 Ptot DC tp D= T 10 3 fT D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 10 1 BCX 68 EHP00463 MHz tp T 10 2 1.0 V 1.2 5 10 2 5 5 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 1 10 0 10 0 5 10 1 5 10 2 mA 10 3 ΙC tp 3 Jun-29-2001 BCX68 DC current gain hFE = f (IC ) Collector-emitter saturation voltage VCE = 1V IC = f (VCEsat), h FE = 10 BCX 68 10 3 EHP00464 10 4 BCX 68 EHP00465 mA 5 h FE ΙC 100 ˚C 10 25 ˚C 10 2 3 5 -50 ˚C 100 ˚C 25 ˚C -50 ˚C 5 10 2 5 10 1 10 5 1 5 10 0 10 0 10 5 10 2 5 10 1 5 10 3 0 mA 10 4 0 0.2 0.4 0.6 Collector cutoff current ICBO = f (TA) Base-emitter saturation voltage VCB = 25V IC = f (VBEsat), hFE = 10 Ι CB0 BCX 68 EHP00466 10 4 BCX 68 EHP00467 mA ΙC max 10 4 10 3 5 5 10 100 ˚C 25 ˚C -50 ˚C 3 5 10 2 typ 10 2 5 10 0.8 VCE sat ΙC 10 5 nA V 5 10 1 5 5 10 0 1 0 50 100 ˚C 10 0 150 TA 0 0.2 0.4 0.6 0.8 1.0 V 1.2 VBE sat 4 Jun-29-2001