BCP68 NPN Silicon AF Transistor For general AF applications 4 High collector current High current gain Low collector-emitter saturation voltage 3 Complementary type: BCP69 (PNP) 2 1 Type Marking Pin Configuration BCP68 BCP 68 1=B 2=C 3=E 4=C SOT223 BCP68-10 BCP 68-10 1 = B 2=C 3=E 4=C SOT223 BCP68-16 BCP 68-16 1 = B 2=C 3=E 4=C SOT223 BCP68-25 BCP 68-25 1 = B 2=C 3=E 4=C SOT223 VPS05163 Package Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 20 V Collector-emitter voltage VCES 25 V Collector-base voltage VCBO 25 V Emitter-base voltage VEBO 5 DC collector current IC 1 Peak collector current ICM 2 Base current IB 100 Peak base current IBM 200 Total power dissipation, TS = 124 °C Ptot 1.5 W Junction temperature Tj 150 °C Storage temperature Tstg Values Unit A mA -65 .. 150 Thermal Resistance Junction - soldering point1) RthJS 17 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Nov-29-2001 BCP68 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. V(BR)CEO 20 - - V(BR)CES 25 - - V(BR)CBO 25 - - V(BR)EBO 5 - - ICBO - - 100 nA ICBO - - 100 µA hFE 50 - - BCP68 85 - 375 BCP68-10 85 100 160 BCP68-16 100 160 250 BCP68-25 160 250 375 60 - - - - 0.5 IC = 5 mA, VCE = 10 V - 0.6 - IC = 1 A, VCE = 1 - - 1 - 100 - Characteristics Collector-emitter breakdown voltage V IC = 30 mA, IB = 0 Collector-emitter breakdown voltage IC = 10 µA, VBE = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 25 V, IE = 0 Collector cutoff current VCB = 25 V, IE = 0 , TA = 150 °C DC current gain 1) - IC = 5 mA, VCE = 10 V DC current gain 1) IC = 500 mA, VCE = 1 V hFE DC current gain 1) hFE IC = 1 A, VCE = 1 V Collector-emitter saturation voltage1) VCEsat V IC = 1 A, IB = 100 mA Base-emitter voltage 1) VBE(ON) AC Characteristics Transition frequency fT MHz IC = 100 mA, VCE = 5 V, f = 100 MHz 1) Pulse test: t ≤=300µs, D = 2% 2 Nov-29-2001 BCP68 Total power dissipation Ptot = f(TS) Transition frequency fT = f (IC) VCE = 5V 10 3 1.8 fT P tot W BCP 68 EHP00275 MHz 5 1.2 10 2 0.9 5 0.6 0.3 0 0 15 30 45 60 75 90 105 120 10 1 10 0 °C 150 TS 5 10 1 5 10 2 DC current gain hFE = f (I C) VCB = 25V VCE = 1V BCP 68 10 3 ΙC Collector cutoff current ICBO = f (TA) 10 5 mA EHP00276 10 3 Ι CBO nA h FE BCP 68 EHP00277 5 10 4 100 ˚C 10 2 max 10 3 25 ˚C -50 ˚C 5 typ 10 2 10 1 5 10 1 10 0 0 50 100 ˚C 10 0 10 0 150 10 1 10 2 4 10 3 mA 10 ΙC TA 3 Nov-29-2001 BCP68 Collector-emitter saturation voltage Base-emitter saturation voltage IC = f (VCEsat ), hFE = 10 IC = f (VBEsat ), hFE = 10 10 4 ΙC BCP 68 EHP00278 10 4 mA ΙC 10 3 5 5 100 ˚C 25 ˚C -50 ˚C 5 10 1 5 5 0 0.2 100 ˚C 25 ˚C -50 ˚C 10 2 5 10 1 10 0 EHP00279 mA 10 3 10 2 BCP 68 0.6 0.4 V 10 0 0.8 V CEsat 0 0.2 0.4 0.6 0.8 V 1.2 V BE sat Permissible pulse load Ptotmax / PtotDC = f (tp ) 10 3 BCP 68 Ptot max Ptot DC EHP00280 D= tp T tp T 10 2 D = 0.0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 10 1 5 10 -1 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 1 tp 4 Nov-29-2001