SMBTA56M PNP Silicon AF Transistor 4 High breakdown voltage Low collector-emitter saturation voltage 5 Complementary type: SMBTA06M (NPN) 3 2 1 VPW05980 Type Marking SMBTA56M s2G Pin Configuration 1=B 2=C 3=E Package 4 n.c. 5 = C SCT595 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 80 Collector-base voltage VCBO 80 Emitter-base voltage VEBO 4 DC collector current IC Peak collector current ICM Base current IB 100 Peak base current IBM 200 Total power dissipation, TS 95 °C Ptot 1 W Junction temperature Tj 150 °C Storage temperature Tstg Value 500 1 Unit V mA A mA -65 .. 150 Thermal Resistance Junction - soldering point 1) RthJS 55 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Nov-30-2001 SMBTA56M Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)CEO 80 - - V(BR)CBO 80 - - V(BR)EBO 4 - - ICBO - - 100 nA ICBO - - 20 µA ICEO - - 100 nA DC Characteristics Collector-emitter breakdown voltage V IC = 1 mA, IB = 0 Collector-base breakdown voltage IC = 100 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 80 V, IE = 0 Collector cutoff current VCB = 80 V, IE = 0 , TA = 150 °C Collector cutoff current VCE = 60 V, IB = 0 DC current gain 1) - hFE IC = 10 mA, VCE = 1 V 100 - - IC = 100 mA, VCE = 1 V 100 - - VCEsat - - 0.25 VBE(ON) - - 1.2 fT - 150 - MHz Ccb - 5 - pF Collector-emitter saturation voltage1) V IC = 100 mA, IB = 10 mA Base-emitter voltage 1) IC = 100 mA, VCE = 1 V AC Characteristics Transition frequency I C = 20 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz 1) Pulse test: t < 300s; D < 2% 2 Nov-30-2001 SMBTA56M Total power dissipation Ptot = f (TS ) 1200 P tot mW 800 600 400 200 0 0 20 40 60 80 120 °C 100 150 TS Permissible Pulse Load Permissible Pulse Load RthJS = f (tp ) Ptotmax / PtotDC = f (tp) 10 3 Ptotmax / PtotDC 10 2 RthJS K/W 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 0 10 -1 -6 10 10 -5 10 -4 10 -3 10 - 10 2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 -2 s 10 10 0 -6 10 0 tp 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 3 Nov-30-2001 SMBTA56M DC current gain hFE = f(IC) Collector-emitter saturation voltage VCE = 1V IC = f (VCEsat), h FE = 10 EHP00852 10 3 EHP00850 10 3 mA ΙC h FE 100 C 25 C -50C 100 C 25 C 10 2 10 2 5 -50 C 10 1 10 1 5 10 0 -1 10 10 0 10 1 10 2 mA 10 10 0 3 0.0 0.5 V ΙC V CEsat Collector cutoff current ICBO = f(TA) Collector current I C = f (VBE) VCB = 20V VCE = 1V EHP00851 10 4 nA 10 5 10 5 2 EHP00846 10 3 mA Ι CBO 3 1.0 100 C 25 C -50 C ΙC max 10 2 5 10 1 typ 10 1 5 5 10 0 10 5 0 5 10 -1 10 -1 0 50 0 C 150 100 0.5 V 1.0 1.5 V BE TA 4 Nov-30-2001