SIMOPAC® Module BSM 191 F VDS = 1000 V ID = 28 A R DS(on) = 0.42 Ω ● ● ● ● ● ● ● Power module Single switch FREDFET N channel Enhancement mode Package with insulated metal base plate 1) Package outline/Circuit diagram: 1 Type Ordering Code BSM 191 F C67076-A1053-A2 Maximum Ratings Parameter Symbol Values Unit Drain-source voltage VDS 1000 V Drain-gate voltage, RGS = 20 kΩ VDGR 1000 Gate-source voltage VGS ± 20 Continuous drain current, TC = 25 ˚C ID 28 Pulsed drain current, TC = 25 ˚C ID puls 110 Operating and storage temperature range Tj, Tstg – 55 … + 150 ˚C Power dissipation, TC = 25 ˚C Ptot 700 W Thermal resistance Chip-case A K/W Rth JC ≤ 0.18 Insulation test voltage , t = 1 min. Vis 2500 Vac Creepage distance, drain-source – 16 mm Clearance, drain-source – 11 DIN humidity category, DIN 40 040 – F IEC climatic category, DIN IEC 68-1 – 55/150/56 2) 1) 2) – See chapter Package Outline and Circuit Diagrams. Insulation test voltage between drain and base plate referred to standard climate 23/50 in acc. with DIN 50 014, IEC 146, para. 492.1. Semiconductor Group 78 03.96 BSM 191 F Electrical Characteristics at Tj = 25 ˚C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain-source breakdown voltage VGS = 0, ID = 0.25 mA V(BR)DSS Gate threshold voltage VGS = VDS, ID = 1 mA VGS(th) Zero gate voltage drain current VDS = 1000 V, VGS = 0 Tj = 25 ˚C Tj = 125 ˚C I DSS Gate-source leakage current VGS = 20 V, VDS = 0 IGSS Drain-source on-state resistance VGS = 10 V, ID = 18 A RDS(on) V 1000 – – 2.1 3.0 4.0 µA – – 50 300 250 1000 – 10 100 nA Ω – 0.38 0.42 Dynamic Characteristics Forward transconductance VDS ≥ 2 × ID × RDS(on)max., ID = 18 A gfs 15 22 – S Input capacitance VGS = 0, VDS = 25 V, f = 1 MHz Ciss – 22 30 nF Output capacitance VGS = 0, VDS = 25 V, f = 1 MHz Coss – 1.0 1.5 Reverse transfer capacitance VGS = 0, VDS = 25 V, f = 1 MHz Crss – 0.36 0.5 Turn-on time ton (ton = td (on) + tr) VCC = 500 V, VGS = 10 V ID = 18 A, RGS = 3.3 Ω td (on) – 60 – tr – 30 – Turn-off time toff (toff = td (off) + tf) VCC = 500 V, VGS = 10 V ID = 18 A, RGS = 3.3 Ω td (off) – 350 – tf – 60 – Semiconductor Group 79 ns BSM 191 F Electrical Characteristics (cont’d) at Tj = 25 ˚C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. Fast recovery reverse diode Continuous reverse drain current TC = 25 ˚C IS Pulsed reverse drain current TC = 25 ˚C ISM Diode forward on-voltage IF = 56 A , VGS = 0 1) trr Reverse recovery charge IF = IS, diF/dt = 100 A/ µs, VR = 100 V Qrr – 28 – – 110 – 1.2 1.6 – 300 – V ns µC – upon request Semiconductor Group – VSD Reverse recovery time IF = IS, diF/dt = 100 A/ µs, VR = 100 V 1) A 80 2.2 – BSM 191 F Characteristics at Tj = 25 ˚C, unless otherwise specified. Power dissipation Ptot = f (TC) parameter: Tj = 150 ˚C Typ. output characteristics ID = f (VDS) parameter: tp = 80 µs Safe operating area ID = f (VDS) parameter: single pulse, TC = 25 ˚C, Tj ≤ 150 ˚C Typ. transfer characteristic ID = f (VGS) parameter: tp = 80 µs , VDS = 25 V Semiconductor Group 81 BSM 191 F Continuous drain current ID = f (TC) parameter: VGS ≥ 10 V, Tj = 150 ˚C Drain-source breakdown voltage V(BR)DSS (Tj) = b x V(BR)DSS (25 ˚C) Drain-source on-state resistance RDS(on) = f (Tj) parameter: ID = 18 A; VGS = 10 V (spread) Typ. capacitances C = f (VDS) parameter: VGS = 0, f = 1 MHz Semiconductor Group 82 BSM 191 F Typ. reverse recovery charge Qrr = f (Tj) parameter: diF/dt = 100 A/ µs, IF = 28 A, VR = 100 V Semiconductor Group Forward characteristics of fast-recovery reverse diode IF = f (VSD) parameter: Tj,tp = 80 µs (spread) 83 BSM 191 F Transient thermal impedance ZthJC = f (tp) parameter: D = tp/T Typ. gate charge VGS = f (QGate) parameter: IDpuls = 42 A Semiconductor Group 84