PD - 94537
IRF7491
HEXFET® Power MOSFET
Applications
High frequency DC-DC converters
VDSS
RDS(on) max
ID
80V
16mΩ@VGS = 10V
9.7A
Benefits
Low Gate to Drain Charge to Reduce
Switching Losses
Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
Fully Characterized Avalanche Voltage
and Current
A
A
D
1
8
S
2
7
D
S
3
6
D
G
4
5
D
S
SO-8
Top View
Absolute Maximum Ratings
Max.
Units
Drain-to-Source Voltage
Parameter
80
V
VGS
Gate-to-Source Voltage
± 20
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
9.7
ID @ TA = 100°C
Continuous Drain Current, VGS @ 10V
6.1
IDM
Pulsed Drain Current
77
PD @TA = 25°C
Maximum Power Dissipation
2.5
W
Linear Derating Factor
0.02
W/°C
4.4
-55 to + 150
V/ns
°C
VDS
dv/dt
TJ
Peak Diode Recovery dv/dt
Operating Junction and
TSTG
Storage Temperature Range
A
Thermal Resistance
Typ.
Max.
Units
RθJL
Junction-to-Drain Lead
Parameter
–––
20
°C/W
RθJA
Junction-to-Ambient (PCB Mount) *
–––
50
Notes
through
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are on page 8
1
08/30/02
IRF7491
Static @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ
RDS(on)
Min. Typ. Max. Units
V
Conditions
80
–––
–––
VGS = 0V, ID = 250µA
Breakdown Voltage Temp. Coefficient
–––
0.08
–––
V/°C Reference to 25°C, ID = 1mA
Static Drain-to-Source On-Resistance
–––
14
16
VGS(th)
Gate Threshold Voltage
3.5
–––
5.5
mΩ
V
VDS = VGS, ID = 250µA
IDSS
Drain-to-Source Leakage Current
–––
–––
1.0
µA
VDS = 64V, VGS = 0V
–––
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
nA
VGS = 20V
Gate-to-Source Reverse Leakage
–––
–––
-100
VGS = 10V, ID = 5.8A
VDS = 64V, VGS = 0V, TJ = 125°C
VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
9.6
–––
–––
S
Conditions
gfs
Qg
Forward Transconductance
VDS = 25V, ID = 5.8A
Total Gate Charge
–––
51
76
Qgs
Gate-to-Source Charge
–––
18
–––
Qgd
Gate-to-Drain ("Miller") Charge
–––
18
–––
VGS = 10V
td(on)
Turn-On Delay Time
–––
22
–––
VDD = 40V
tr
Rise Time
–––
19
–––
td(off)
Turn-Off Delay Time
–––
32
–––
tf
Fall Time
–––
10
–––
VGS = 10V
Ciss
Input Capacitance
–––
2940
–––
VGS = 0V
Coss
Output Capacitance
–––
290
–––
Crss
Reverse Transfer Capacitance
–––
160
–––
Coss
Output Capacitance
–––
980
–––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss
Output Capacitance
–––
210
–––
VGS = 0V, VDS = 64V, ƒ = 1.0MHz
Coss eff.
Effective Output Capacitance
–––
310
–––
VGS = 0V, VDS = 0V to 64V
ID = 5.8A
nC
VDS = 40V
ID = 5.8A
ns
RG = 6.2Ω
VDS = 25V
pF
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
Single Pulse Avalanche Energy
Typ.
Max.
Units
EAS
–––
130
mJ
IAR
Avalanche Current
–––
5.8
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
–––
–––
9.7
ISM
(Body Diode)
Pulsed Source Current
–––
–––
77
showing the
integral reverse
VSD
(Body Diode)
Diode Forward Voltage
–––
–––
1.3
V
p-n junction diode.
TJ = 25°C, IS = 5.8A, VGS = 0V
trr
Reverse Recovery Time
–––
47
–––
ns
Qrr
Reverse Recovery Charge
–––
110
–––
nC
ton
Forward Turn-On Time
2
MOSFET symbol
A
D
G
S
TJ = 25°C, IF = 5.8A, VDD = 25V
di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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IRF7491
100
100
10
BOTTOM
1
6.0V
0.1
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
15V
12V
10V
8.0V
7.5V
7.0V
6.5V
6.0V
BOTTOM
10
6.0V
20µs PULSE WIDTH
Tj = 150°C
20µs PULSE WIDTH
Tj = 25°C
0.01
1
0.1
1
10
100
1000
0.1
VDS, Drain-to-Source Voltage (V)
T J = 150°C
10.00
T J = 25°C
VDS = 25V
20µs PULSE WIDTH
0.10
6.0
7.0
8.0
9.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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10.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
2.5
5.0
10
100
1000
Fig 2. Typical Output Characteristics
100.00
1.00
1
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
ID, Drain-to-Source Current (Α)
VGS
15V
12V
10V
8.0V
7.5V
7.0V
6.5V
6.0V
ID = 9.7A
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF7491
100000
VGS , Gate-to-Source Voltage (V)
ID= 5.8A
Coss = Cds + Cgd
10000
C, Capacitance(pF)
12.0
VGS = 0V,
f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Ciss
1000
Coss
Crss
100
VDS= 64V
VDS= 40V
10.0
VDS= 16V
8.0
6.0
4.0
2.0
0.0
10
1
10
100
0
VDS, Drain-to-Source Voltage (V)
30
40
50
60
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100.00
1000
T J = 25°C
1.00
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
T J = 150°C
10.00
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
20
Q G Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
10
100µsec
1msec
1
T A = 25°C
Tj = 150°C
Single Pulse
VGS = 0V
0.10
10msec
0.1
0.0
0.2
0.4
0.6
0.8
1.0
VSD, Source-toDrain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
10
0
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF7491
12
VDS
ID , Drain Current (A)
VGS
9
RD
D.U.T.
RG
+
-VDD
10V
6
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
3
VDS
90%
0
25
50
75
100
125
150
TA , Ambient Temperature (°C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJA )
100
D = 0.50
0.20
10
0.10
0.05
0.02
1
0.01
PDM
t1
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.01
0.00001
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
RDS(on) , Drain-to -Source On Resistance (m Ω)
RDS (on) , Drain-to-Source On Resistance (m Ω)
IRF7491
20
19
18
17
VGS = 10V
16
15
14
13
12
11
10
0
10
20
30
40
50
60
70
45
40
35
30
25
ID = 9.7A
20
15
10
5
0
80
6
7
8
9
10
11
12
13
14
15
16
VGS, Gate -to -Source Voltage (V)
ID , Drain Current (A)
Fig 12. On-Resistance Vs. Drain Current
Fig 13. On-Resistance Vs. Gate Voltage
Current Regulator
Same Type as D.U.T.
QG
VGS
.2µF
QGS
.3µF
D.U.T.
+
V
- DS
QGD
300
EAS , Single Pulse Avalanche Energy (mJ)
50KΩ
12V
VG
VGS
3mA
Charge
IG
ID
Current Sampling Resistors
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveform
15V
V(BR)DSS
tp
L
VDS
D.U.T
RG
IAS
20V
I AS
tp
DRIVER
+
V
- DD
0.01Ω
Fig 15a&b. Unclamped Inductive Test circuit
and Waveforms
6
A
TOP
240
BOTTOM
ID
2.6A
4.7A
5.8A
180
120
60
0
25
50
75
100
125
150
Starting TJ , Junction Temperature ( °C)
Fig 15c. Maximum Avalanche Energy
Vs. Drain Current
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IRF7491
SO-8 Package Details
D
DIM
B
5
A
8
7
6
5
H
E
0.25 [.010]
1
2
3
A
4
MIN
.0532
.0688
1.35
1.75
A1 .0040
.0098
0.10
0.25
b
.013
.020
0.33
0.51
c
.0075
.0098
0.19
0.25
D
.189
.1968
4.80
5.00
E
.1497
.1574
3.80
4.00
e
.050 BASIC
1.27 BASIC
e1
6X e
e1
C
.025 BASIC
0.635 BASIC
H
.2284
.2440
5.80
6.20
K
.0099
.0196
0.25
0.50
L
.016
.050
0.40
1.27
y
0°
8°
0°
8°
y
0.10 [.004]
0.25 [.010]
MAX
K x 45°
A
A1
8X b
MILLIMETERS
MAX
A
6
INCHES
MIN
8X L
8X c
7
C A B
FOOTPRINT
NOTES:
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
8X 0.72 [.028]
2. CONTROLLING DIMENSION: MILLIMETER
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.
5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].
6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].
6.46 [.255]
7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO
A SUBSTRATE.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking
EXAMPLE: THIS IS AN IRF7101 (MOSFET)
INTERNATIONAL
RECTIFIER
LOGO
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YWW
XXXX
F7101
DATE CODE (YWW)
Y = LAST DIGIT OF THE YEAR
WW = WEEK
LOT CODE
PART NUMBER
7
IRF7491
SO-8 Tape and Reel
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Starting TJ = 25°C, L = 7.4mH
RG = 25Ω, IAS = 5.8A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board.
Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
ISD ≤ 5.8A, di/dt ≤ 250A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.08/02
8
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