IRF IRF7464PBF

PD- 95273
IRF7464PbF
SMPS MOSFET
HEXFET® Power MOSFET
Applications
l High frequency DC-DC converters
l Lead-Free
Benefits
Low Gate to Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance
Including Effective COSS to Simplify
Design, (See App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
VDSS
RDS(on) max
ID
0.73Ω
1.2A
200V
l
1
8
S
2
7
S
3
6
4
5
S
G
A
A
D
D
D
D
SO-8
Top View
Absolute Maximum Ratings
Parameter
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
dv/dt
TJ
TSTG
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
1.2
1.0
10
2.5
0.02
± 30
6.8
-55 to + 150
Units
A
W
W/°C
V
V/ns
°C
300 (1.6mm from case )
Typical SMPS Topologies
l
Telecom 48V input Forward Converter
Notes  through † are on page 8
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1
9/21/04
IRF7464PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
V(BR)DSS
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min.
200
–––
–––
3.0
–––
–––
–––
–––
Typ.
–––
0.23
–––
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA †
0.73
Ω
VGS = 10V, ID = 0.72A „
5.5
V
VDS = VGS, ID = 250µA
25
VDS = 200V, VGS = 0V
µA
250
VDS = 160V, VGS = 0V, TJ = 125°C
100
VGS = 30V
nA
-100
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
gfs
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min.
1.1
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
9.5
2.5
4.6
11
9.5
18
15
280
52
14
330
25
48
Max. Units
Conditions
–––
S
VDS = 50V, ID = 0.72A
14
ID = 0.72A
3.8
nC
VDS = 160V
6.9
VGS = 10V, „
–––
VDD = 100V
–––
I
D = 0.72A
ns
–––
RG = 24Ω
–––
VGS = 10V „
–––
VGS = 0V
–––
VDS = 25V
–––
pF
ƒ = 1.0MHz
–––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
–––
VGS = 0V, VDS = 160V, ƒ = 1.0MHz
–––
VGS = 0V, VDS = 0V to 160V …
Avalanche Characteristics
Parameter
EAS
IAR
EAR
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Typ.
Max.
Units
–––
–––
–––
68
1.2
0.25
mJ
A
mJ
Typ.
Max.
Units
–––
50
°C/W
Thermal Resistance
Parameter
RθJA
Maximum Junction-to-Ambient†
Diode Characteristics
IS
ISM
VSD
trr
Qrr
2
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
–––
–––
2.3
A
–––
–––
10
–––
–––
–––
–––
60
130
1.3
90
200
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = 0.72A, VGS = 0V
TJ = 25°C, IF = 0.72A
di/dt = 100A/µs „
D
S
„
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IRF7464PbF
10
10
VGS
15V
10V
9.0V
8.0V
7.5V
7.0V
6.5V
BOTTOM 6.0V
1
6.0V
0.1
20µs PULSE WIDTH
TJ = 25 °C
0.01
0.1
1
10
RDS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
TJ = 150 ° C
TJ = 25 ° C
1
V DS = 50V
20µs PULSE WIDTH
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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10
100
Fig 2. Typical Output Characteristics
3.0
7.5
1
VDS , Drain-to-Source Voltage (V)
10
7.0
20µs PULSE WIDTH
TJ = 150 °C
0.1
0.1
100
Fig 1. Typical Output Characteristics
6.5
6.0V
1
VDS , Drain-to-Source Voltage (V)
0.1
6.0
VGS
15V
10V
9.0V
8.0V
7.5V
7.0V
6.5V
BOTTOM 6.0V
TOP
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
8.0
ID = 1.2A
2.5
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF7464PbF
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
100
Coss
Crss
10
1
10
100
ID = 0.72A
VDS = 160V
VDS = 100V
VDS = 40V
16
12
8
4
1
FOR TEST CIRCUIT
SEE FIGURE 13
0
1000
0
4
6
8
10
12
14
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
10
I D , Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY RDS(on)
TJ = 150 ° C
1
TJ = 25 ° C
0.1
0.4
V GS = 0 V
0.5
0.6
0.7
0.8
0.9
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
2
QG , Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
ISD , Reverse Drain Current (A)
C, Capacitance(pF)
1000
VGS , Gate-to-Source Voltage (V)
20
10000
1.0
10
10us
100us
1
1ms
TA = 25 ° C
TJ = 150 ° C
Single Pulse
0.1
1
10ms
10
100
1000
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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Fig 6. On-Resistance Vs. Drain Current
IRF7464PbF
1.6
VDS
ID , Drain Current (A)
VGS
1.2
RD
D.U.T.
RG
+
-V DD
10V
0.8
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
0.4
VDS
90%
0.0
25
50
75
100
125
150
TC , Case Temperature ( °C)
10%
VGS
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJA )
100
D = 0.50
0.20
10
0.10
0.05
PDM
0.02
1
t1
0.01
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF7464PbF
RDS(on) , Drain-to -Source On Resistance (Ω)
RDS (on) , Drain-to-Source On Resistance (Ω)
0.70
VGS = 10V
0.60
0.50
0.0
1.0
2.0
3.0
4.0
0.70
0.60
ID = 0.72A
0.50
5.0
7
ID , Drain Current (A)
8
9
10
11
12
13
14
15
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance Vs. Drain Current
Fig 13. On-Resistance Vs. Gate Voltage
Current Regulator
Same Type as D.U.T.
QG
VGS
.2µF
QGS
.3µF
D.U.T.
+
V
- DS
QGD
200
EAS , Single Pulse Avalanche Energy (mJ)
50KΩ
12V
VG
VGS
3mA
Charge
IG
ID
Current Sampling Resistors
Fig 13a&b. Basic Gate Charge Test Circuit
and Waveform
15V
V(BR)DSS
tp
L
VDS
D.U.T
RG
IAS
20V
I AS
tp
DRIVER
+
V
- DD
0.01Ω
Fig 14a&b. Unclamped Inductive Test circuit
and Waveforms
6
A
TOP
160
BOTTOM
ID
0.5A
0.8A
1.2A
120
80
40
0
25
50
75
100
125
150
Starting TJ , Junction Temperature ( °C)
Fig 14c. Maximum Avalanche Energy
Vs. Drain Current
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IRF7464PbF
SO-8 Package Outline
D
DIM
B
5
A
8
7
6
5
H
E
0.25 [.010]
1
2
3
A
4
MIN
.0532
.0688
1.35
1.75
A1 .0040
e
e1
.0098
0.10
0.25
.013
.020
0.33
0.51
c
.0075
.0098
0.19
0.25
D
.189
.1968
4.80
5.00
E
.1497
.1574
3.80
4.00
e
.050 BAS IC
1.27 BAS IC
.025 BAS IC
0.635 BAS IC
H
.2284
.2440
5.80
6.20
K
.0099
.0196
0.25
0.50
L
.016
.050
0.40
1.27
y
0°
8°
0°
8°
K x 45°
A
C
y
0.10 [.004]
8X b
0.25 [.010]
MAX
b
e1
6X
MILLIMET ERS
MAX
A
6
INCHES
MIN
A1
8X L
8X c
7
C A B
FOOT PRINT
NOTES:
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
8X 0.72 [.028]
2. CONTROLLING DIMENSION: MILLIMETER
3. DIMENSIONS ARE S HOWN IN MILLIMETERS [INCHES ].
4. OUT LINE CONFORMS TO JEDEC OUTLINE MS -012AA.
5 DIMENSION DOES NOT INCLUDE MOLD PROTRUS IONS.
MOLD PROTRUS IONS NOT T O EXCEED 0.15 [.006].
6 DIMENSION DOES NOT INCLUDE MOLD PROTRUS IONS.
MOLD PROTRUS IONS NOT T O EXCEED 0.25 [.010].
6.46 [.255]
7 DIMENSION IS T HE LENGTH OF LEAD FOR S OLDERING TO
A SUBST RAT E.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking
EXAMPLE: T HIS IS AN IRF7101 (MOS FET )
INT ERNAT IONAL
RECT IF IER
LOGO
XXXX
F 7101
DAT E CODE (YWW)
P = DES IGNAT ES LEAD-F REE
PRODUCT (OPT IONAL)
Y = LAS T DIGIT OF T HE YEAR
WW = WEEK
A = ASS EMBLY S IT E CODE
LOT CODE
PART NUMBER
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7
IRF7464PbF
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
… Coss eff. is a fixed capacitance that gives the same charging time
‚ Starting TJ = 25°C, L = 94mH
as Coss while VDS is rising from 0 to 80% VDSS
RG = 25Ω, IAS = 1.2A.
ƒ ISD ≤ 0.72A, di/dt ≤ 130A/µs, VDD ≤ V(BR)DSS,
† When mounted on 1 inch square copper board, t<10 sec
TJ ≤ 150°C
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.09/04
8
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