PD - 95863
IRF6218S
IRF6218L
SMPS MOSFET
HEXFET® Power MOSFET
Applications
l
Reset Switch for Active Clamp
Reset DC-DC converters
VDSS
RDS(on) max
-150V 150m:@VGS = -10V
ID
-27A
Benefits
l
l
l
Low Gate to Drain Charge to Reduce
Switching Losses
Fully Characterized Capacitance Including
Effective COSS to Simplify Design (See
App. Note AN1001)
Fully Characterized Avalanche Voltage
and Current
D
G
D2Pak
IRF6218S
S
TO-262
IRF6218L
Absolute Maximum Ratings
Max.
Units
VDS
Drain-to-Source Voltage
Parameter
-150
V
VGS
Gate-to-Source Voltage
± 20
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
-27
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
-19
IDM
-110
Pulsed Drain Current
c
PD @TC = 25°C Maximum Power Dissipation
Linear Derating Factor
h
dv/dt
TJ
Peak Diode Recovery dv/dt
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
A
250
W
1.6
W/°C
8.2
-55 to + 175
V/ns
°C
300 (1.6mm from case )
Thermal Resistance
Parameter
g
RθJC
Junction-to-Case
RθJA
Junction-to-Ambient (PCB Mounted, steady state)
gh
Typ.
Max.
Units
–––
0.61
°C/W
–––
40
Notes through are on page 9
www.irf.com
1
4/22/04
IRF6218S/L
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
-150
–––
–––
∆V(BR)DSS/∆TJ
Breakdown Voltage Temp. Coefficient
–––
-0.17
–––
V/°C Reference to 25°C, ID = -1mA
RDS(on)
Static Drain-to-Source On-Resistance
–––
120
150
mΩ VGS = -10V, ID = -16A
VGS(th)
Gate Threshold Voltage
-3.0
–––
-5.0
V
IDSS
Drain-to-Source Leakage Current
µA
IGSS
–––
–––
-25
–––
–––
-250
Gate-to-Source Forward Leakage
–––
–––
-100
Gate-to-Source Reverse Leakage
–––
–––
100
V
VGS = 0V, ID = -250µA
f
VDS = VGS, ID = -250µA
VDS = -120V, VGS = 0V
VDS = -120V, VGS = 0V, TJ = 150°C
nA
VGS = -20V
VGS = 20V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
S
Conditions
gfs
Qg
Forward Transconductance
11
–––
–––
VDS = -50V, ID = -16A
Total Gate Charge
–––
71
110
Qgs
Gate-to-Source Charge
–––
21
–––
Qgd
Gate-to-Drain ("Miller") Charge
–––
32
–––
VGS = -10V
td(on)
Turn-On Delay Time
–––
21
–––
VDD = -75V
tr
Rise Time
–––
70
–––
td(off)
Turn-Off Delay Time
–––
35
–––
RG = 3.9Ω
tf
Fall Time
–––
30
–––
VGS = -10V
Ciss
Input Capacitance
–––
2210
–––
VGS = 0V
Coss
Output Capacitance
–––
370
–––
VDS = -25V
Crss
Reverse Transfer Capacitance
–––
89
–––
Coss
Output Capacitance
–––
2220
–––
Coss
Output Capacitance
–––
170
–––
VGS = 0V, VDS = -120V, ƒ = 1.0MHz
Coss eff.
Effective Output Capacitance
–––
340
–––
VGS = 0V, VDS = 0V to -120V
ID = -16A
nC
ns
pF
VDS = -120V
f
ID = -16A
f
ƒ = 1.0MHz
VGS = 0V, VDS = -1.0V, ƒ = 1.0MHz
Avalanche Characteristics
EAS
Parameter
Single Pulse Avalanche Energy
IAR
Avalanche Current
c
d
Typ.
Max.
Units
–––
210
mJ
–––
-16
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
–––
–––
-27
ISM
(Body Diode)
Pulsed Source Current
–––
–––
-110
showing the
integral reverse
VSD
(Body Diode)
Diode Forward Voltage
–––
–––
-1.6
V
p-n junction diode.
TJ = 25°C, IS = -16A, VGS = 0V
trr
Reverse Recovery Time
–––
150
–––
ns
Qrr
Reverse Recovery Charge
–––
860
–––
nC
2
c
MOSFET symbol
A
D
G
S
f
TJ = 25°C, IF = -16A, VDD = -25V
di/dt = -100A/µs
f
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IRF6218S/L
1000
1000
100
BOTTOM
10
TOP
-ID, Drain-to-Source Current (A)
-ID, Drain-to-Source Current (A)
TOP
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
100
1
-4.5V
0.1
BOTTOM
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
10
-4.5V
1
≤60µs PULSE WIDTH
≤60µs PULSE WIDTH
Tj = 175°C
Tj = 25°C
0.01
0.1
0.1
1
10
100
0.1
-V DS, Drain-to-Source Voltage (V)
10
100
-V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.5
T J = 25°C
T J = 175°C
10
VDS = 50V
≤60µs PULSE WIDTH
1.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
-I D, Drain-to-Source Current (Α)
1
ID = -27A
VGS = -10V
2.0
1.5
1.0
0.5
2
4
6
8
10
-V GS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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12
-60 -40 -20 0
20 40 60 80 100 120 140 160 180
T J , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
vs. Temperature
3
IRF6218S/L
100000
-V GS, Gate-to-Source Voltage (V)
ID= -16A
C oss = C ds + C gd
10000
C, Capacitance(pF)
12.0
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
Ciss
1000
Coss
Crss
100
VDS= 30V
8.0
6.0
4.0
2.0
10
0.0
1
10
100
0
-V DS, Drain-to-Source Voltage (V)
30
40
50
60
70
80
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
-I D, Drain-to-Source Current (A)
-I SD, Reverse Drain Current (A)
20
1000
1000.00
100.00
T J = 175°C
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
10.00
T J = 25°C
100µsec
10
Tc = 25°C
Tj = 175°C
Single Pulse
VGS = 0V
1msec
10msec
1
0.10
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
-V SD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
10
QG Total Gate Charge (nC)
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
1.00
VDS= 120V
VDS= 75V
10.0
1
10
100
1000
-VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF6218S/L
30
RD
V DS
-I D, Drain Current (A)
25
VGS
D.U.T.
RG
20
+
VDD
VGS
15
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
10
Fig 10a. Switching Time Test Circuit
5
VDS
90%
0
25
50
75
100
125
150
175
T C , Case Temperature (°C)
10%
VGS
Fig 9. Maximum Drain Current vs.
Ambient Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
1
Thermal Response ( Z thJC )
D = 0.50
0.20
0.1
0.10
0.05
τJ
0.02
0.01
0.01
R1
R1
τJ
τ1
τ1
R2
R2
τ2
R3
R3
τ3
τ2
Ci= τi/Ri
Ci= i/Ri
SINGLE PULSE
( THERMAL RESPONSE )
τC
τ
τ3
Ri (°C/W) τi (sec)
0.264
0.000285
0.206
0.001867
0.140
0.013518
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
5
RDS(on) , Drain-to -Source On Resistance (mΩ)
RDS (on) , Drain-to-Source On Resistance (m Ω)
IRF6218S/L
400
350
300
VGS = -10V
250
200
150
100
0
20
40
60
1000
900
800
700
600
ID = -27A
500
400
300
200
100
0
80
4
-I D , Drain Current (A)
5
6
7
8
9
10
11
12
-V GS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance vs. Drain Current
Fig 13. On-Resistance vs. Gate Voltage
Current Regulator
Same Type as D.U.T.
QG
-VGS
50KΩ
.2µF
12V
QGS
.3µF
QGD
900
D.U.T.
+VDS
VG
VGS
Charge
-3mA
IG
ID
Current Sampling Resistors
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveform
L
VDS
I AS
D.U.T
RG
IAS
-20V
tp
VDD
A
DRIVER
0.01Ω
EAS , Single Pulse Avalanche Energy (mJ)
-
ID
-4.6A
-6.3A
BOTTOM -16A
800
TOP
700
600
500
400
300
200
100
0
25
tp
V(BR)DSS
15V
Fig 15a&b. Unclamped Inductive Test circuit
and Waveforms
6
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
Fig 15c. Maximum Avalanche Energy
vs. Drain Current
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IRF6218S/L
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
D2Pak Part Marking Information
7+,6,6$1,5)6:,7+
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www.irf.com
3$57180%(5
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IRF6218S/L
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
1- GATE
IGBT
2- COLLECTOR
3- EMITTER
TO-262 Part Marking Information
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www.irf.com
8
IRF6218S/L
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
0.368 (.0145)
0.342 (.0135)
11.60 (.457)
11.40 (.449)
15.42 (.609)
15.22 (.601)
24.30 (.957)
23.90 (.941)
TRL
10.90 (.429)
10.70 (.421)
1.75 (.069)
1.25 (.049)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
4
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 1.6mH, RG = 25Ω, IAS = -17A.
ISD ≤ -17A, di/dt ≤ -520A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Rq is measured at TJ of approximately 90°C.
When mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques
refer to application note #AN-994.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.4/04
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9