PD - 9.1378A
IRLI2203N
PRELIMINARY
HEXFET® Power MOSFET
Logic-Level Gate Drive
Advanced Process Technology
l Isolated Package
l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm
l Fully Avalanche Rated
Description
l
D
l
VDSS = 30V
RDS(on) = 0.007Ω
G
ID = 61A
S
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab
and external heatsink. This isolation is equivalent to using
a 100 micron mica barrier with standard TO-220 product.
The Fullpak is mounted to a heatsink using a single clip or
by a single screw fixing.
TO-220 FULLPAK
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Max.
Units
61
43
400
47
0.31
± 16
390
60
4.7
1.2
-55 to + 175
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
RθJC
RθJA
Junction-to-Case
Junction-to-Ambient
Typ.
Max.
Units
–––
–––
3.2
65
°C/W
11/1/96
IRLI2203N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
V(BR)DSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD
Internal Drain Inductance
LS
Internal Source Inductance
Ciss
Coss
Crss
C
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain to Sink Capacitance
IGSS
Min.
30
–––
–––
–––
1.0
47
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.035
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
15
210
29
54
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA
0.007
VGS = 10V, ID = 37A
Ω
0.01
VGS = 4.5V, ID = 31A
–––
V
VDS = VGS, ID = 250µA
–––
S
VDS = 25V, I D = 60A
25
VDS = 30V, VGS = 0V
µA
250
VDS = 24V, VGS = 0V, T J = 150°C
100
VGS = 16V
nA
-100
VGS = -16V
110
ID = 60A
31
nC
VDS = 24V
57
VGS = 4.5V, See Fig. 6 and 13
–––
VDD = 15V
–––
ID = 60A
ns
–––
RG = 1.8Ω, VGS = 4.5V
–––
RD = 0.25Ω, See Fig. 10
D
Between lead,
––– 4.5 –––
6mm (0.25in.)
nH
G
from package
––– 7.5 –––
and center of die contact
S
––– 3500 –––
VGS = 0V
––– 1400 –––
VDS = 25V
pF
––– 690 –––
ƒ = 1.0MHz, See Fig. 5
–––
12 –––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
IS
ISM
VSD
t rr
Q rr
t on
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
––– –––
61
showing the
A
G
integral reverse
––– ––– 400
p-n junction diode.
S
––– ––– 1.3
V
TJ = 25°C, IS = 37A, VGS = 0V
––– 94 140
ns
TJ = 25°C, IF = 60A
––– 280 410
µC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Specification changes
Rev. #
1
1
Parameters
Old spec.
New spec.
VGS(th) (Max.)
VGS (Max.)
2.5V
±20
No spec.
±16
Comments
Removed VGS(th) Max. Specification
Decrease VGS Max. Specification
Revision Date
11/1/96
11/1/96
Notes:
Repetitive rating; pulse width limited by
I SD ≤ 60A, di/dt ≤ 140A/µs, VDD ≤ V(BR)DSS ,
max. junction temperature. ( See fig. 11 )
VDD = 15V, starting TJ = 25°C, L = 220µH
RG = 25Ω, IAS = 60A. (See Figure 12)
Pulse width ≤ 300µs; duty cycle ≤ 2%.
t=60s, ƒ=60Hz
Uses IRL2203N data and test conditions
TJ ≤ 175°C
IRLI2203N
1000
1000
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTT OM 2.5V
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTT OM 2.5V
TOP
ID , D ra in -to -S o u rc e C u rre n t (A )
ID , D ra in -to -S o u rc e C u rre n t (A )
TOP
100
10
2 .5V
20 µ s PU LSE W ID TH
T J = 2 5°C
1
0.1
1
10
100
2.5 V
10
20 µ s PU LSE W ID TH
T J = 1 75°C
1
A
100
0.1
V D S , Drain-to-Source V oltage (V )
R DS (on ) , Drain-to-S ource O n Resistance
( Norm alized)
I D , D rain -to- S ou rce C ur ren t (A )
2.0
T J = 2 5 °C
T J = 1 75 °C
10
V DS = 1 5 V
2 0 µ s P U L SE W ID TH
2.0
3.0
4.0
5.0
6.0
7.0
8.0
V G S , Ga te-to-S o urce V oltage (V )
Fig 3. Typical Transfer Characteristics
A
100
Fig 2. Typical Output Characteristics
1000
1
10
V D S , Drain-to-Source V oltage (V )
Fig 1. Typical Output Characteristics
100
1
9.0
A
I D = 100 A
1.5
1.0
0.5
V G S = 10V
0.0
-60 -40 -20
0
20
40
60
80
A
100 120 140 160 180
T J , Junction Tem perature (°C )
Fig 4. Normalized On-Resistance
Vs. Temperature
IRLI2203N
V GS
C is s
C rs s
C o ss
C , C a p a cita n ce (p F )
6000
15
= 0 V,
f = 1M H z
= C gs + C gd , Cds SH O RTE D
= C gd
= C ds + C g d
V G S , G ate-to-Source V oltage ( V)
8000
V D S = 24 V
V D S = 15 V
12
C is s
C os s
4000
C rs s
2000
0
10
9
6
3
FOR TE ST CIR C UIT
SEE FIGU RE 1 3
0
A
1
I D = 60A
100
A
0
V D S , Drain-to-Source V oltage (V)
60
90
120
150
Q G , T otal G ate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
O PER ATIO N IN TH IS AR EA L IM ITED
BY R DS (o n)
10 µs
I D , D ra in C u rre n t (A )
I S D , R e v e rse D ra in C u rre n t (A )
30
TJ = 25 °C
TJ = 17 5°C
100
VG S = 0 V
10
0.5
1.0
1.5
2.0
2.5
3.0
V S D , S ource-to-Drain Voltage (V )
Fig 7. Typical Source-Drain Diode
Forward Voltage
A
3.5
100
10 0µs
1m s
10
10m s
T C = 25 °C
T J = 17 5°C
S ing le Pulse
1
1
A
10
V D S , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
100
IRLI2203N
70
RD
VDS
ID , D ra in C u rre n t (A m p s )
60
VGS
D.U.T.
RG
50
+
- VDD
40
5.0V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
30
Fig 10a. Switching Time Test Circuit
20
VDS
10
90%
A
0
25
50
75
100
125
150
175
TC , C ase T em perature (°C )
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
T herm al R es ponse (Z th J C )
10
D = 0 .5 0
1
0 .2 0
0 .1 0
0 .0 5
0.1
PDM
0 .0 2
t
0 . 01
t
No te s:
1 . Du ty fa ctor D = t
S IN G L E P U L S E
(T H E R M A L R E S P O N S E )
0.01
0.00001
1
1
/t
2
2
2. P eak TJ = P D M x Z thJ C + T C
0.0001
0.001
0.01
0.1
1
10
t 1 , R ectangular P ulse D uratio n (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
A
100
IRLI2203N
15 V
D R IV E R
L
VDS
D .U .T
RG
+
- VDD
IA S
2 0V
0 .0 1 Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
A
E A S , S in g le P u lse A va la n c h e E n e rg y (m J )
1000
TO P
BO TTOM
800
600
400
200
0
V D D = 1 5V
25
50
A
75
100
125
150
Starting TJ , Junction T emperature (°C)
V (BR )D SS
tp
ID
2 4A
42A
60 A
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I AS
Current Regulator
Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
QG
12V
.2µF
.3µF
4.5 V
QGS
D.U.T.
QGD
+
V
- DS
VGS
VG
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
175
IRLI2203N
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
-
-
+
•
•
•
•
RG
Driver Gate Drive
Period
P.W.
+
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
D=
-
VDD
P.W.
Period
VGS=10V
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
ISD
*
IRLI2203N
Package Outline
TO-220 Fullpak Outline
Dimensions are shown in millimeters (inches)
10.60 (.417 )
10.40 (.409 )
ø
3 .40 (.1 33)
3 .10 (.1 23)
4.80 (.189 )
4.60 (.181 )
-A3.7 0 (.145)
3.2 0 (.126)
16 .0 0 (.630)
15 .8 0 (.622)
2.80 (.110)
2.60 (.102)
L EA D AS SIGN M EN T S
1 - GA T E
2 - D R AIN
3 - SO U R C E
7.10 (.280 )
6.70 (.263 )
1.15 (.045)
M IN .
NO T ES :
1 D IM E N SION IN G & T O LER AN C IN G
PE R A N SI Y1 4.5M , 1982
1
2
3
2 C O N T R OLL IN G D IM EN SION : IN C H .
3.30 (.130)
3.10 (.122)
-B -
13 .7 0 (.540)
13 .5 0 (.530)
C
A
1.40 (.05 5)
3X
1.05 (.04 2)
0.90 (.035 )
3X 0.70 (.028 )
0.25 (.010)
3X
M
A M
0.48 (.019 )
0.44 (.017 )
2.85 (.1 12)
2.65 (.1 04)
B
2 .5 4 (.100)
2X
D
B
M IN IM U M C R E EP AG E
D IST A N C E B ET W E EN
A -B -C -D = 4.80 (.189 )
Part Marking Information
TO-220 Fullpak
E XAM
: S
T HIS
N IRF
I840G
E X AM
PLE PLE
: T HI
IS AISN AIRF
1010
SE LY
MBLY
W ITW
H ITH
A S SAS
E MB
CODE
E401
LO TLOT
CO DE
9B 1M
A
IN TE R NA T ION A L
INT ER NAT IONA L
R EC T IF IER
IRIRF
F 1010
RE CTIF IER
I840G
LO GO
9246
P A RT NU M BE R
A
PA RT NU MBE R
LOGO
9 24 5
9BE 401 1M
A SAS
S EM
B LY
SE MBLY
LOLOT
T CO
DE E
COD
D A TE C OD E
ATEW )CODE
(YDYW
W )A R
Y(YYW
Y = YE
AR
WYY
W == YE
WE
EK
W W = W E EK
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IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
11/96