PD - 9.1353A
IRFI530N
PRELIMINARY
HEXFET® Power MOSFET
l
l
l
l
l
Advanced Process Technology
Isolated Package
High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm
Fully Avalanche Rated
D
VDSS = 100V
RDS(on) = 0.11Ω
G
Description
ID = 12A
S
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
device for use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab
and external heatsink. This isolation is equivalent to using
a 100 micron mica barrier with standard TO-220 product.
The Fullpak is mounted to a heatsink using a single clip or
by a single screw fixing.
TO-220 FULLPAK
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Max.
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Current
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
12
8.6
60
41
0.27
±20
150
9.0
4.1
5.0
-55 to + 175
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (1.6mm from case)
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
RθJC
RθJA
Junction-to-Case
Junction-to-Ambient
Min.
Typ.
Max.
––––
––––
––––
––––
3.7
65
Units
°C/W
3/16/98
IRFI530N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Min.
100
–––
–––
2.0
6.4
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
IDSS
Drain-to-Source Leakage Current
LD
Internal Drain Inductance
–––
LS
Internal Source Inductance
–––
Ciss
Coss
Crss
C
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain to Sink Capacitance
–––
–––
–––
–––
V(BR)DSS
∆V(BR)DSS/∆TJ
IGSS
Typ.
–––
0.12
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
6.4
27
37
25
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA
0.11
Ω
VGS = 10V, ID = 6.6A
4.0
V
VDS = VGS, ID = 250µA
–––
S
VDS = 50V, ID = 9.0A
25
VDS = 100V, VGS = 0V
µA
250
VDS = 80V, VGS = 0V, TJ = 150°C
100
VGS = 20V
nA
-100
VGS = -20V
44
ID = 9.0A
6.2
nC VDS = 80V
21
VGS = 10V, See Fig. 6 and 13
–––
VDD = 50V
–––
ID = 9.0A
ns
–––
RG = 12Ω
–––
RD = 5.5Ω, See Fig. 10
Between lead,
4.5 –––
6mm (0.25in.)
nH
from package
7.5 –––
and center of die contact
640 –––
VGS = 0V
160 –––
VDS = 25V
pF
88 –––
ƒ = 1.0MHz, See Fig. 5
12 –––
ƒ = 1.0MHz
D
G
S
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
–––
–––
12
–––
–––
60
–––
–––
–––
–––
130
650
1.3
190
970
A
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
TJ = 25°C, IS = 6.6A, VGS = 0V
TJ = 25°C, IF = 9.0A
di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. ( See fig. 11 )
VDD = 15V, starting TJ = 25°C, L = 3.1mH
t=60s, ƒ=60Hz
RG = 25Ω, IAS = 9.0A. (See Figure 12)
ISD ≤ 9.0A, di/dt ≤ 520A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Uses IRF530N data and test conditions
D
G
S
IRFI530N
100
100
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
I , D rain-to-S ource C urrent (A )
D
I , D rain-to-S ource C urrent (A )
D
TOP
10
4.5V
20µs P U LS E W ID TH
T J = 25°C
1
0.1
1
10
10
4.5V
20µs P U LS E W ID TH
T J = 175°C
1
A
0.1
100
3.0
R D S (on ) , D rain-to -S ource O n R esistance
(N orm alized)
I D , D ra in -to-S o urc e C urren t (A )
100
T J = 2 5 °C
T J = 1 7 5 °C
10
V DS = 5 0V
2 0 µ s P U L S E W ID T H
5
6
7
8
9
A
100
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
4
10
V D S , D ra in-to-S o urc e V o lta ge (V )
V D S , D rain-to-S ourc e V oltage (V )
1
1
10
V G S , G a te -to -S o u rc e V o lta g e (V )
Fig 3. Typical Transfer Characteristics
A
I D = 15A
2.5
2.0
1.5
1.0
0.5
V G S = 10V
0.0
-60 -40 -20
0
20
40
60
80
A
100 120 140 160 180
T J , Junction T em perature (°C )
Fig 4. Normalized On-Resistance
Vs. Temperature
IRFI530N
V GS
C iss
C rss
C oss
C , C apacitanc e (pF )
1000
=
=
=
=
20
0V ,
f = 1M H z
C gs + C gd , Cds S H O R TE D
C gd
C ds + C gd
V G S , G ate-to-S ource V oltage (V )
1200
C iss
800
600
C os s
400
C rss
200
0
A
1
10
I D = 9.0A
V D S = 80V
V D S = 50V
V D S = 20V
16
12
8
4
FO R TE S T C IR C U IT
S E E FIG U R E 13
0
100
0
V D S , D rain-to-Sourc e Voltage (V )
10
15
20
25
30
35
40
A
45
Q G , Total G ate C harge (nC )
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
1000
O P E R A TIO N IN TH IS A R E A LIM ITE D
B Y R D S (on)
I D , D rain C urrent (A )
I S D , R everse D rain C urrent (A )
5
T J = 175°C
10
T J = 25°C
V G S = 0V
1
0.4
0.6
0.8
1.0
1.2
1.4
V S D , S ource-to-D rain V oltage (V )
Fig 7. Typical Source-Drain Diode
Forward Voltage
A
1.6
100
10µ s
10
100µ s
1m s
T C = 25°C
T J = 175°C
S ingle P ulse
1
1
10m s
10
100
A
1000
V D S , D rain-to-S ource V oltage (V )
Fig 8. Maximum Safe Operating Area
IRFI530N
RD
VDS
8.0
VGS
D.U.T.
I D , Drain Current (A)
RG
+
-VDD
6.0
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
4.0
Fig 10a. Switching Time Test Circuit
VDS
2.0
90%
0.0
25
50
75
100
125
150
175
TC , Case Temperature ( ° C)
10%
VGS
td(on)
Fig 9. Maximum Drain Current Vs.
Case Temperature
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
D = 0.50
1
0.20
0.10
0.05
0.1
0.01
0.00001
0.02
0.01
P DM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
10
IRFI530N
L
VDS
D.U.T.
RG
+
-
VDD
IAS
10 V
tp
0.01Ω
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
VDD
E A S , S ingle P ulse A valanc he E nergy (m J)
350
TO P
300
B O TTO M
ID
3.7 A
6.4A
9.0A
250
200
150
100
50
0
V D D = 25V
25
50
A
75
100
125
150
175
VDS
S tarting T J , Junction T em perature (°C )
IAS
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
QG
12V
.2µF
.3µF
10 V
QGS
D.U.T.
QGD
+
V
- DS
VGS
VG
3mA
IG
Charge
Fig 13a. Basic Gate Charge Waveform
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
IRFI530N
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
-
-
+
•
•
•
•
RG
Driver Gate Drive
P.W.
+
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
D=
Period
-
VDD
P.W.
Period
VGS=10V
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
ISD
*
IRFI530N
Package Outline
TO-220 FullPak Outline
Dimensions are shown in millimeters (inches)
10.60 (.417)
10.40 (.409)
ø
3.40 (.133)
3.10 (.123)
4.80 (.189)
4.60 (.181)
-A3.70 (.145)
3.20 (.126)
16.00 (.630)
15.80 (.622)
2.80 (.110)
2.60 (.102)
LE A D A S S IG N ME N TS
1 - G A TE
2 - D R A IN
3 - SOURCE
7.10 (.280)
6.70 (.263)
1.15 (.045)
M IN .
NOTES:
1 D IME N S IO N IN G & TO LE R A N C IN G
P E R A N S I Y 14.5M , 1982
1
2
3
2 C O N TR O LLIN G D IM E N S IO N : IN C H .
3.30 (.130)
3.10 (.122)
-B-
13.70 (.540)
13.50 (.530)
C
A
1.40 (.055)
3X
1.05 (.042)
0.90 (.035)
3X 0.70 (.028)
0.25 (.010)
3X
M
A M
B
2.54 (.100)
2X
0.48 (.019)
0.44 (.017)
2.85 (.112)
2.65 (.104)
D
B
M IN IM U M C R E E P A G E
D IS TA N C E B E TW E E N
A -B -C -D = 4.80 (.189)
Part Marking Information
TO-220 FullPak
E X A M P L E : T H IS IS A N IR F I8 4 0 G
W ITH A S S E M B L Y
LOT COD E E401
A
IN T E R N A T IO N A L
R E C T IF IE R
LOGO
PART NUMBER
IR F I8 4 0 G
E 40 1 92 45
ASSEMBLY
LOT CODE
D ATE CO DE
(Y Y W W )
Y Y = YE A R
W W = W EEK
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
3/98