PD - 9.1387B
IRFI3710
PRELIMINARY
HEXFET® Power MOSFET
Advanced Process Technology
Isolated Package
l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm
l Fully Avalanche Rated
Description
l
D
l
VDSS = 100V
RDS(on) = 0.025Ω
G
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
ID = 32A
S
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial
applications. The moulding compound used provides
a high isolation capability and a low thermal resistance
between the tab and external heatsink. This isolation
is equivalent to using a 100 micron mica barrier with
standard TO-220 product. The Fullpak is mounted to
a heatsink using a single clip or by a single screw
fixing.
TO-220 FULLPAK
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Max.
Units
32
23
180
63
0.42
± 20
530
28
6.3
5.0
-55 to + 175
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
RθJC
RθJA
Junction-to-Case
Junction-to-Ambient
Typ.
Max.
Units
–––
–––
2.4
65
°C/W
3/16/98
IRFI3710
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Min.
100
–––
–––
2.0
20
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.12
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
14
59
58
48
IDSS
Drain-to-Source Leakage Current
LD
Internal Drain Inductance
–––
4.5
LS
Internal Source Inductance
–––
7.5
Ciss
Coss
Crss
C
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain to Sink Capacitance
–––
–––
–––
–––
3000
640
330
12
V(BR)DSS
∆V(BR)DSS/∆TJ
IGSS
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA
0.025
Ω
VGS = 10V, ID = 16A
4.0
V
VDS = VGS, ID = 250µA
–––
S
VDS = 25V, ID = 28A
25
VDS = 100V, VGS = 0V
µA
250
VDS = 80V, VGS = 0V, TJ = 150°C
100
VGS = 20V
nA
-100
VGS = -20V
190
ID = 28A
26
nC VDS = 80V
82
VGS = 10V, See Fig. 6 and 13
–––
VDD = 50V
–––
ID = 28A
ns
–––
RG = 2.5Ω
–––
RD = 1.7Ω, See Fig. 10
Between lead,
–––
6mm (0.25in.)
nH
G
from package
–––
and center of die contact
–––
VGS = 0V
–––
VDS = 25V
pF
–––
ƒ = 1.0MHz, See Fig. 5
–––
ƒ = 1.0MHz
D
S
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
32
––– –––
showing the
A
G
integral reverse
––– ––– 180
p-n junction diode.
S
––– ––– 1.3
V
TJ = 25°C, IS = 16A, VGS = 0V
––– 210 320
ns
TJ = 25°C, IF = 28A
––– 1.7 2.6
µC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. ( See fig. 11 )
VDD = 25V, starting TJ = 25°C, L = 1.4mH
t=60s, ƒ=60Hz
RG = 25Ω, IAS = 28A. (See Figure 11)
ISD ≤28A, di/dt ≤ 460A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Uses IRF3710 data and test conditions
IRFI3710
1000
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
I , D rain-to-S ource C urrent (A )
D
I , D rain-to-S ource C urrent (A )
D
TOP
100
100
10
4.5V
20µ s P U LS E W ID TH
TC = 25°C
1
0.1
1
10
A
4.5V
10
100
V D S , D rain-to-S ource V oltage (V )
R D S (on ) , D rain-to-S ource O n R esistance
(N orm alized)
I D , D ra in -to-S o urc e C urren t (A )
3.0
T J = 2 5 °C
100
T J = 1 7 5 °C
10
VDS = 50V
2 0 µ s P U L S E W ID T H
5
6
7
8
9
V G S , G a te -to -S o u rc e V o lta g e (V )
Fig 3. Typical Transfer Characteristics
10
A
100
Fig 2. Typical Output Characteristics
1000
4
1
V D S , D rain-to-S ource V oltage (V )
Fig 1. Typical Output Characteristics
1
20µ s P U LS E W ID TH
T C = 175°C
1
0.1
10
A
I D = 46A
2.5
2.0
1.5
1.0
0.5
V G S = 10V
0.0
-60 -40 -20
0
20
40
60
80
A
100 120 140 160 180
T J , Junction T em perature (°C )
Fig 4. Normalized On-Resistance
Vs. Temperature
IRFI3710
V GS
C iss
C rss
C oss
5000
=
=
=
=
20
0V ,
f = 1M H z
C gs + C gd , C ds S H O R TE D
C gd
C ds + C gd
V G S , G ate-to-S ource V oltage (V )
6000
C , C apacitanc e (pF )
C is s
4000
3000
C os s
2000
C rs s
1000
0
10
V D S = 80V
V D S = 50V
V D S = 20V
16
12
8
4
FO R TE S T C IR C U IT
S E E FIG U R E 13
0
A
1
I D = 28 A
0
100
V D S , D rain-to-S ource V oltage (V )
80
120
160
A
200
Q G , Total G ate C harge (nC )
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
O P E R A TIO N IN TH IS A R E A LIM ITE D
B Y R D S (on)
I D , D rain C urrent (A )
I S D , R everse D rain C urrent (A )
40
100
T J = 17 5°C
T J = 25°C
10
10µ s
100
100µ s
1m s
10
10m s
V G S = 0V
1
0.4
0.8
1.2
1.6
V S D , S ource-to-D rain V oltage (V )
Fig 7. Typical Source-Drain Diode
Forward Voltage
A
2.0
T C = 25°C
T J = 175°C
S ingle P ulse
1
1
A
10
100
1000
V D S , D rain-to-S ource V oltage (V )
Fig 8. Maximum Safe Operating Area
IRFI3710
35
RD
VDS
I D , Drain Current (A)
30
VGS
D.U.T.
RG
25
+
-VDD
20
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
15
Fig 10a. Switching Time Test Circuit
10
VDS
5
90%
0
25
50
75
100
125
150
175
TC , Case Temperature ( ° C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
1
D = 0.50
0.20
0.10
0.05
0.1
0.02
0.01
P DM
SINGLE PULSE
(THERMAL RESPONSE)
t1
0.01
t2
0.001
0.00001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
10
IRFI3710
15V
L
VDS
D .U .T
RG
IA S
20V
D R IV E R
+
V
- DD
0 .01 Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
A
E A S , S ingle P ulse A valanc he E nergy (m J)
1200
TO P
1000
B O TTO M
ID
11A
20A
28 A
800
600
400
200
0
V D D = 25V
25
50
A
75
100
125
150
175
S tarting T J , Junction T em perature (°C )
V (B R )D S S
tp
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Current Regulator
Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
QG
12V
.2µF
.3µF
10 V
QGS
D.U.T.
QGD
+
V
- DS
VGS
VG
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
IRFI3710
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
-
-
+
•
•
•
•
RG
Driver Gate Drive
P.W.
+
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
D=
Period
-
VDD
P.W.
Period
VGS=10V
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
ISD
*
IRFI3710
Package Outline
TO-220 Fullpak Outline
Dimensions are shown in millimeters (inches)
10.60 (.417)
10.40 (.409)
ø
3.40 (.133)
3.10 (.123)
4.80 (.189)
4.60 (.181)
-A3.70 (.145)
3.20 (.126)
16.00 (.630)
15.80 (.622)
2.80 (.110)
2.60 (.102)
LE A D A S S IG N ME N TS
1 - G A TE
2 - D R A IN
3 - SOURCE
7.10 (.280)
6.70 (.263)
1.15 (.045)
M IN .
NOTES:
1 D IME N S IO N IN G & TO LE R A N C IN G
P E R A N S I Y 14.5M , 1982
1
2
3
2 C O N TR O LLIN G D IM E N S IO N : IN C H .
3.30 (.130)
3.10 (.122)
-B-
13.70 (.540)
13.50 (.530)
C
A
1.40 (.055)
3X
1.05 (.042)
0.90 (.035)
3X 0.70 (.028)
0.25 (.010)
2.54 (.100)
2X
3X
M
A M
B
0.48 (.019)
0.44 (.017)
2.85 (.112)
2.65 (.104)
D
B
M IN IM U M C R E E P A G E
D IS TA N C E B E TW E E N
A -B -C -D = 4.80 (.189)
Part Marking Information
TO-220 Fullpak
E X AEMXPALMEP: L ETH
1 0F1I8
0 40G
: IST HIS
IS AISN AIR
N F IR
W ITH
A S SAESMS BE LMYB L Y
W ITH
L O TL OCTO DCEO D9EB 1EM4 0 1
A
IN TE R N A T IO N A L
IN T E R N A T IO N A L
R E C TIF IE R
IRIRFF1I8
0 1400 G
R E C T IF IE R
LOGO
9
246
LOGO
9 BE 40 1 192M45
A SASSESM
B LBYL Y
EM
L OL TO T C O
DD
EE
CO
P A R T N U M B E RA
PART NUMBER
D A TE C O D E
(YDYAW
T EW )C O D E
Y(Y
Y Y=W YWE)A R
Y == YE
RK
WYW
W EA E
W W = W EEK
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http://www.irf.com/
Data and specifications subject to change without notice.
3/98