Data sheet, May 2009 Control integrated Power System (CIPOS™) IHCS22R60CE Two Phase Switched Reluctance Drives Power Management & Drives N e v e r s t o p t h i n k i n g . CIPOS™ IHCS22R60CE Control integrated Power System (CIPOS™) Revision History: Previous Version: Page 6 2009-05 2.2 Subjects (major changes since last revision) Corrected section “Pin assignment” V 2.3 Author(s): O. Hellmund, W. Scholz, W. Frank, W. Brunnbauer Edition 2006-07 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 5/5/09. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). 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Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Datasheet 2/16 Rev. 2.3, May 2009 CIPOS™ IHCS22R60CE Table of contents: Control integrated Power System...................................................................................................................4 Features .........................................................................................................................................................4 Typical Application .......................................................................................................................................4 Description ....................................................................................................................................................4 Internal Electrical Schematic...........................................................................................................................5 Pin Assignment.................................................................................................................................................6 Pin Description..............................................................................................................................................6 /AHIN, /ALIN, /BHIN and /BLIN (low side and high side control pins, Pin 17 - 20) .....................................6 EN (enable, Pin 23) .....................................................................................................................................7 VDD, VSS (control side supply and reference, Pin 22, 23).........................................................................7 GND_Rsh1 (low side anode - Shunt reference, Pin 15) and COM_Rsh2 (Shunt signal)...........................7 V+ (positive bus input voltage, Pin 10)........................................................................................................7 Rt (Temperature sense output) ...................................................................................................................7 Absolute Maximum Ratings ............................................................................................................................8 Module section ..............................................................................................................................................8 IGBT and Diode Section ...............................................................................................................................8 Control section..............................................................................................................................................8 Recommended Operation Conditions............................................................................................................9 Static Characteristics.......................................................................................................................................9 Dynamic Characteristics................................................................................................................................10 Integrated Components .................................................................................................................................11 Characteristics................................................................................................................................................12 Test Circuits ....................................................................................................................................................14 Package Outline:.............................................................................................................................................16 Package data...................................................................................................................................................16 Datasheet 3/16 Rev. 2.3, May 2009 CIPOS™ IHCS22R60CE Control integrated Power System Two Phase switched Reluctance 600V / 15A @ 80°C Features Description • fully isolated package • Infineon Trenchstop IGBTs with lowest VCE(sat) • optimal adapted Emcon diode for low EMI • SOI gate driver with boot strap diode and capacitor (4.4 µF) • rugged SOI gate driver technology with stability against transient and negative voltage • temperature monitor and over temperature shutdown • undervoltage lockout at all channels • matched propagation delay for all channels • shunt for current measurement integrated • lead-free terminal plating; RoHS compliant • qualified according to JEDEC1 (high temperature stress tests for 1000h) for target applications CIPOS™ module family offers the chance for integrating various power and control components to increase reliability, optimize PCB size and system costs. This module is designed to control two phase switched reluctance motors in variable speed drives for applications like vacuum cleaners. The package concept is specially adapted to power applications, which need good thermal conduction and electrical isolation, but also EMI-save control and overload protection. The features of Infineon TrenchStop® IGBTs and diodes are combined with a new optimized Infineon SOI gate driver for excellent electrical performance. Certification UL 1577 (UL file E314539) System configuration • 2 Phases in asymmetric halfbridge topology IGBT + FW-diodes, • SOI gate driver • Shunt resistor for current measurement • Bootstrap diodes for high side supply • Integrated 4.4 µF bootstrap capacitance • temp.sensor • Isolated heatsink • creepage distances typ. 3.2 mm Typical Application • Two Phase Switched Reluctance Drives 1 J-STD-020 and JESD-022 Datasheet 4/16 Rev. 2.3, May 2009 CIPOS™ IHCS22R60CE Internal Electrical Schematic Vb (5) TAh TBh DAh DBh LA1 (7) LA2 (9) LB1 (11) LB2 (13) DAI GND_Rsh1 (15) DBI TAI TBI Rsh RH1 RL1 RH2 RL2 CbsA1 CbsA2 CbsB1 CbsB2 Dbs1 Dbs2 Rbs1 Rbs2 VDD (22) VDD /AHIN (18) /BHIN (19) nc. /HIN1 /HIN2 /HIN3 nc. /LIN2 /LIN1 /LIN3 /ALIN (17) /BLIN (20) Driver-IC RRCin COM-Rsh2 (16) EN (23) see section „integrated components“ for further specification Rt(24) CVCC RTS VSS (21) Figure 1: Internal Schematic Datasheet 5/16 Rev. 2.3, May 2009 CIPOS™ IHCS22R60CE Pin Assignment Pin Name Description 1 n.c. 2 n.c. 3 n.c. 4 n.c. 5 V+ 6 Positive Bus Input Voltage n.c. 7 LA1 8 Output Terminal 1 Phase A n.c. 9 LA2 10 Output Terminal 2 Phase A n.c. 11 LB1 12 Output Terminal 1 Phase B n.c. 13 LB2 14 Output Terminal 2 Phase B n.c. 15 GND-sh1 Negative Bus Input Voltage / Connection of internal Shunt 16 Rsh2-COM 17 /ALIN Control Signal for Low Side Transistor of Phase A 18 /AHIN Control Signal for High Side Transistor of Phase A 19 /BHIN Control Signal for High Side Transistor of Phase B 20 /BLIN Control Signal for Low Side Transistor of Phase B 21 VSS Control Reference Signal 22 VDD Control supply terminal 23 EN Enable Control Terminal 24 Rt Temperature read-out Terminal Current measurement Signal, Reference of Low Side Gate Drive Pin Description /AHIN, /ALIN, /BHIN and /BLIN (low side and high side control pins, Pin 17 - 20) These pins are active low and they are responsible for the control of the integrated IGBT. The Schmitt-trigger input threshold of them are such to guarantee LSTTL and CMOS compatibility down to 3.3V controller outputs. Pull-up resistor of about 75 kOhm is internally provided to pre-bias inputs during supply start-up and a zener clamp is provided for pin protection purposes. Input schmitt-trigger and noise filter provide beneficial noise rejection to short input pulses. The noise filter suppresses control pulses which are below the filter time tFILIN. The filter acts according to Figure E for other short signals ranges tFILIN1 and tFILIN2. It is recommended for proper work of CiPoS™ not Figure 2: Input pin structure Datasheet 6/16 Rev. 2.3, May 2009 CIPOS™ IHCS22R60CE to provide input pulse-width lower than 1us. The integrated gate drive provides shoot through prevention capability which avoids the simultaneous on-state of a pair of gate outputs of the same number (i.e. HO1 and LO1, HO2 and LO2 of driver IC). A minimum deadtime insertion of typ 380ns is also provided in these pairs, in order to reduce crossconduction of the external power switches. EN (enable, Pin 23) The signal applied to pin EN controls directly the output stages. All outputs are set to LOW, if EN is at LOW logic level. The internal structure of the pin is the same as Figure 2 made exception of the switching levels of the Schmitt-Trigger, which are here VEN,TH+ = 2.1 V and VEN,TH- = 1.3 V. The typical propagation delay time is tEN = 900 ns. VDD, VSS (control side supply and reference, Pin 22, 23) VDD is the low side supply and it provides power both to input logic and to low side output power stage. Input logic is referenced to VSS ground as well as the under-voltage detection circuit. The under-voltage circuit enables the device to operate at power on when a supply voltage of at least a typical voltage of VDDUV+ = 12.1 V is at least present. The IC shuts down all the gate drivers power outputs, when the VDD supply voltage is below VDDUV- = 10.4 V according to Figure 3. This prevents the external power switches from critically low gate voltage levels during on-state and therefore from excessive power dissipation. VB to VS is the high side supply voltage. The high side circuit can float with respect to VSS following the external high side power device emitter/source voltage. Datasheet 7/16 Due to the low power consumption, the floating driver stage is supplied by an integrated bootstrap circuit connected to VDD. This includes integrated bootstrap capacitors of 4.4µF at each floating supply, which are located very close to the gate drive circuit. VS1,2,3 provide a high robustness against negative voltage in respect of VSS of -50 V. This ensures very stable designs even under rough conditions. GND_Rsh1 (low side anode - Shunt reference, Pin 15) and COM_Rsh2 (Shunt signal) Figure 3: Operation modes The emitters of the low side IGBT are connected to the shunt resistor. They are also connected to pin GND_Rsh2, which is the shunt signal. The low side anodes of the integrated diodes are connected directly to GND_Rsh1, so that only the transistor current of TAl and TBl contribute to the voltage drop over the shunt. V+ (positive bus input voltage, Pin 10) The high side IGBT are connected to the bus voltage. It is recommended, that the bus voltage does not exceed 500 V. Rt (Temperature sense output) A NTC-resistor is integrated with a resistance of 100kOhm at 25°C and a B-constant of B = 4250 K Rev. 2.3, May 2009 CIPOS™ IHCS22R60CE Absolute Maximum Ratings (TJ = 25°C, VDD = 15V Unless Otherwise Specified): Module section Description Condition Symbol Storage temperature range 1 Operating temperature Control PCB Value Tstg -40 … 125 TPCB 125°C Unit °C Solder temperature wavesoldering, 1.6 mm (0.063 in.) from case for 10s Tsol 260 Insulation test voltage RMS, f = 50Hz, t = 1 min VISOL 2500 V Mounting torque M3 screw MS 0.6 Nm IGBT and Diode Section Description Condition Symbol Max. Blocking Voltage Value Unit VCES 600 V DC Output current IGBT Tc = 25 °C, TvJ<150°C Tc = 80 °C, TvJ<150°C IC 21.6 15 A DC Output current Diode Tc = 25 °C, TvJ<150°C Tc = 80 °C, TvJ<150°C IF 17 10 A Repetitive IGBT peak collector current Tp limited by TvJmax. ICRM 45 A Repetitive Diode peak collector current Tp limited by TvJmax. IFRM 30 A Short circuit withstand time VDC = 400V, TvJ =150°C tsc 5 µs Power dissipation per IGBT Tc = 25°C Ptot 65 W -40 … 150 °C Operating junction temperature range Single thermal resistance, junctioncase TvjI ,TvjD IGBT Diode RthJC RthJCD 2.1 3.6 K/W Control section Description Condition Symbol Value Min Module supply voltage Unit max VDD -1 20 V VS1,2,3 VDD-VBS-6 VDD-VBS-50 600 V Vin -1 10 V Operating junction temperature2 TJ,IC - 125 Max. switching frequency fPWM high side floating IC supply offset voltage Input Voltage 1 2 tp < 500 ns /ALIN, /AHIN, /BLIN, /BHIN, EN 10 kHz Monitored by pin 24 Monitored by pin 24 Datasheet 8/16 Rev. 2.3, May 2009 CIPOS™ IHCS22R60CE Recommended Operation Conditions All voltages are absolute voltages referenced to VSS -Potential unless otherwise specified. Parameter Symbol min. max. High side floating supply offset voltage VS -3 500 High side floating supply voltage (VB vs. VS) VBS 12.5 17.5 High side output voltage (VHO vs. VS) VHO 0 VBS Low side power supply VDD 12.5 17.5 Logic input voltages LIN,HIN,EN,ITRIP VIN 0 5 Unit V Static Characteristics (Tc = 25°C, VDD = 15V, if not stated otherwise) Description Condition Symbol min Typ max Unit V(BR)CES 600 - - V VCE(sat) - 1.65 1.9 2.15 - V Collector-Emitter breakdown voltage VGE = 0V, IC=0.25mA Collector-emitter saturation voltage Iout = +/-15A TvJ = 25°C TvJ = 150°C Diode forward voltage VIN = 5V, Iout = +/-10A TvJ = 25°C TvJ = 150°C VF - 1.65 1.6 2.05 Logic "0" input voltage /ALIN, /AHIN, /BLIN, /BHIN VIH 1.7 2.1 2.4 V Logic "1" input voltage /ALIN, /AHIN, /BLIN, /BHIN VIL 0.7 0.9 1.1 V EN positive going threshold VEN,TH+ 1.9 2.1 2.3 V EN negative going threshold VEN,TH- 1.1 1.3 1.5 V VDD and VBS supply undervoltage positive going threshold VDDUV+ VBSUV+ 11.0 12.1 12.8 V VDD and VBS supply undervoltage negative going threshold VDDUVVBSUV- 9.5 10.4 11.0 V VCC and VBS supply undervoltage lockout hysteresis VDDUVH VBSUVH 1.2 1.7 - V VINCLAMP 9.0 10.1 13 V Input clamp voltage IIN = 4mA; /ALIN, /AHIN, /BLIN, /BHIN, EN V Input bias current VIN = 5V ILIN+ IHIN+ - 55 100 µA Input bias current VIN = 0V ILINIHIN- - 110 200 µA EN Input bias current VEN = 5V IEN+ - 62 120 µA Datasheet 9/16 Rev. 2.3, May 2009 CIPOS™ IHCS22R60CE Dynamic Characteristics (Tc = 25°C, VDD = 15V, if not stated otherwise) Description Condition Symbol min typ max Uni t Turn-on propagation delay High side or low side VLIN,HIN = 0V; Iout = 15A, VDC = 300V td(on) - 656 - ns Turn-on rise time High side or low side Iout = 15A, VDC = 300V VLIN,HIN = 5V tr - 40 - ns Turn-off propagation delay High side or low side VLIN,HIN = 5V; Iout = 15A, VDC = 300V td(off) - 1051 - ns Turn-off fall time High side or low side Iout = 15A, VDC = 300V VLIN,HIN = 0V tf - 32.4 - ns Shutdown propagation delay ENABLE VEN = 0V tEN - 900 - ns Input filter time at LIN for turn on and off and input filter time at HIN for turn on only VLIN,HIN= 0 V & 5V tFILIN 120 270 - ns Input filter time 1 at /AHIN, /BHIN for turn off VHIN = 5V tFILIN1 - 220 - ns Input filter time 2 at /AHIN, /BHIN for turn off VHIN = 5 V tFILIN2 - 400 - ns tFILEN 300 430 - ns - 0.70 0.85 - - 0.36 0.43 - - 0.05 0.12 - Input filter time EN IGBT Turn-on Energy IGBT Turn-off Energy Diode recovery Energy Datasheet Iout = 15A, VDC=300V Tvj = 25°C Tvj = 150°C Eon Iout = 15A, VDC=300V Tvj = 25°C Tvj = 150°C Eoff Iout = 10A, VDC=300V Tvj = 25°C Tvj = 150°C Erec 10/16 mJ mJ mJ Rev. 2.3, May 2009 CIPOS™ IHCS22R60CE Integrated Components Description Condition Symbol min typ max - Unit Ω Integrated Resistor Rbs1, Rbs2 - 10 Shunt Resistor Rsh - 5 Integrated Capacitor CVCC - 0.1 - Integrated Bootstrap Capacitor CbsA1, CbsA2, CbsB1, CbsB2 - 2.2 - RTS - 100 - kΩ B - 4250 - K - 1.3 - V Resistance of NTC TNTC = 25°C B-constant of NTC Forward Voltage of Bootstrap Diode Tj = 25°C, IF = 1 A VFbs Reverse Recovery of Bootsstrap Diode Tj = 25°C, IF = 1 A trrbs Datasheet 11/16 50 mΩ µF ns Rev. 2.3, May 2009 CIPOS™ IHCS22R60CE Characteristics (Tc = 25°C, VDD = 15V, if not stated otherwise) 10mJ td(off) 1000ns Eon tr 100ns tf E, SWITCHING ENERGIES t, SWITCHING TIMES td(on) Eoff 1mJ 0.1mJ 10ns 0A 10A 20A 30A 40A 0A IC, COLLECTOR CURRENT Figure 4. Typical switching times as a function of collector current (inductive load, TvJ=150°C, VCE = 300V Dynamic test circuit in Figure E) 30A 40A Eoff 1.00mJ Eoff 0.75mJ 0.50mJ E, SWITCHING ENERGY LOSSES Eon E, SWITCHING ENERGY LOSSES 20A IC, COLLECTOR CURRENT Figure 5. Typical switching energies as a function of collector current (inductive load, TvJ = 150°C, VCE= 300V Dynamic test circuit in Figure E) 1.25mJ 0.25mJ 10A 0.40mJ Eon 0.20mJ Erec Erec 0.00mJ 25°C 0.00mJ 0A IC, COLLECTOR CURRENT Figure 6. Typical switching energy losses as a function of collector current (inductive load, TvJ = 150°C, VCE = 300V Dynamic test circuit in Figure A) Datasheet 50°C 75°C 100°C 125°C 5A 10A 15A 20A 25A 30A 35A 40A 12/16 TvJ, JUNCTION TEMPERATURE Figure 7. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 300V, IC = 15A Dynamic test circuit in Figure A) Rev. 2.3, May 2009 CIPOS™ IHCS22R60CE 40A 1000kOhm VGE=25°C IC, COLLECTOR CURRENT RTS, NTC RESISTANCE 35A 100kOhm 10kOhm min typ max 1kOhm 125°C 150°C 30A 25A 20A 15A 10A 5A 0A -25°C 0°C 25°C 50°C 75°C 100°C TC, CASE TEMPERATURE Figure 8. Typical NTC characteristic as a function of NTC temperature 0V 1V 2V 3V VCE, COLLECTOR EMITTER VOLTAGE Figure 9. Typical IGBT output characteristic (VDD = 15V) IF, forward CURRENT 25A 20A 15A 10A VGE=25°C 125°C 5A 150°C 0A 0V 1V 2V VF, forward VOLTAGE Figure 10. Typical diode forward current as a function of forward voltage Datasheet 13/16 Rev. 2.3, May 2009 CIPOS™ IHCS22R60CE Test Circuits t Erec Erec = ∫ vD ⋅i F dt 0 Figure A: Dynamic test circuit Leakage inductance Lσ =180nH Stray capacitance C σ =39pF Figure B: Definition of diodes switching characteristics Figure C: Definition of Enable propagation delay t Eoff Eoff = ∫v CEx t Eon ⋅i Cx dt Eon = ∫ vCEx ⋅i Cx dt 0 0 Figure D: Switching times definition and switching energy definition Datasheet 14/16 Rev. 2.3, May 2009 CIPOS™ IHCS22R60CE tFILIN tFILIN LIN HIN LIN on off on off high HO LO LO low Figure E: Short Pulse suppression Datasheet 15/16 Rev. 2.3, May 2009 CIPOS™ IHCS22R60CE Package Outline: Package data Description Condition Symbol Mounting Torque M3 screw MS Mounting pressure on surface Package flat on mounting surface NMC Datasheet 16/16 min typ max Unit 0.5 0.6 Nm 150 N/mm² Rev. 2.3, May 2009