INFINEON TLE7185-1E

Data Sheet, Rev. 2.4, Jul 2010
TLE7185-1E
3-Phase Bridge Driver IC
Automotive Power
TLE7185-1E
Table of Contents
Table of Contents
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
1
Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3
3.1
3.2
Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Pin Assignment TLE7185-1E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Pin Definitions and Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
4
4.1
4.2
4.3
4.4
General Product Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Functional Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Default State of Inputs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5
5.1
5.1.1
5.1.2
5.1.3
5.1.4
5.2
5.2.1
5.2.2
5.2.3
5.2.4
5.2.5
5.2.6
5.2.7
5.2.8
5.2.9
Description and Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MOSFET Driver . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Output Stages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operation at Vs<12V - Integrated Charge Pump . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Sleep Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Protection and Diagnostic Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Short Circuit Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Dead Time and Shoot Through Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Shoot Through Option . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Under Voltage Lock Out on Vs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Under Voltage warning on CB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Over Voltage Warning on Vs and / or VDH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Over Temperature Warning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
ERR Pins . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6
Application Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
7
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
8
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Data Sheet
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14
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15
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15
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17
Rev. 2.4, 2010-07-16
3-Phase Bridge Driver IC
1
TLE7185-1E
Overview
Features
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
Drives 6 N-Channel Power MOSFETs
Separate control input for each MOSFET
Separate Source pin for each MOSFET
Integrated charge pump for operation at low battery voltages
Adjustable dead time
Shoot through protection and Shoot through option
Analog adjustable Short Circuit Protection levels
Low quiescent current mode
2 bit diagnosis / ERRx
Over temperature warning
Over voltage warning
Under voltage warning
Under voltage lockout
0 …95% Duty cycle of High Side MOSFETs
Green Product (RoHS compliant)
AEC Qualified
PG-DSO-36-38
Description
The TLE7185-1E is a driver IC dedicated to control the 6 to 12 external MOSFETs forming the converter for high
current 3 phase motor drives in the automotive sector. It incorporates features like short circuit detection, diagnosis
and combines it with typical automotive specific requirements.
The TLE7185-1E is especially designed for low battery voltage and therefore it is specified down to 5.5V supply
voltage.
Typical applications are cooling fan, water pump, electro-hydraulic and electric power steering. The TLE7185-1E
is designed for 12V power net.
Type
Package
Marking
TLE7185-1E
PG-DSO-36-38
TLE7185-1E
Data Sheet
3
Rev. 2.4, 2010-07-16
TLE7185-1E
Block Diagram
2
Block Diagram
VS
___
INH
GND
CL
CH
CB
VDH
Regulated charge pump
Under voltage warning
Under voltage lockout
BH1
Floating HS driver
Short circuit detection
GH1
SH1
____
ERR1
____
ERR2
ENA
SCDL
Diagnostic logic
Under voltage
Over voltage
Short circuit
Reset
STOE
DT
IL1
___
IH1
Input control
Shoot through
protection /
enable
dead time
IL2
___
IH2
Floating LS driver
Short circuit detection
GL1
SL1
L
E
V
E
L
BH2
Floating HS driver
Short circuit detection
GH2
SH2
S
H
I
F
T
E
R
Floating LS driver
Short circuit detection
GL2
SL2
BH3
Floating HS driver
Short circuit detection
GH3
SH3
IL3
___
IH3
Floating LS driver
Short circuit detection
over
temperature
GL3
SL3
GND
GND
Figure 1
Data Sheet
Block Diagram
4
Rev. 2.4, 2010-07-16
TLE7185-1E
Pin Configuration
3
Pin Configuration
3.1
Pin Assignment TLE7185-1E
STOE
ERR2
ERR1
ENA
IH1
IL1
IH2
IL2
IH3
IL3
DT
INH
CL
CH
VS
GND
CB
GND
Figure 2
Data Sheet
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
19
SCDL
GND
VDH
BH1
GH1
SH1
GL1
SL1
BH2
GH2
SH2
GL2
SL2
BH3
GH3
SH3
GL3
SL3
Pin Configuration
5
Rev. 2.4, 2010-07-16
TLE7185-1E
Pin Configuration
3.2
Pin Definitions and Functions
Pin
Symbol
Function
1
STOE
Input pin to enable shoot through option in all 3 half bridges (active high)
2
ERR2
Open drain error output 2
3
ERR1
Open drain error output 1
4
ENA
Input pin for reset of ERRx registers + active switch off of external MOSFETs, set
HIGH to enable operation
5
IH1
Input for high side switch 1 (active low)
6
IL1
Input for low side switch 1 (active high)
7
IH2
Input for high side switch 2 (active low)
8
IL2
Input for low side switch 2 (active high)
9
IH3
Input for high side switch 3 (active low)
10
IL3
Input for low side switch 3 (active high)
11
DT
Input pin for adjustable dead time function, connect to GND via resistor
12
INH
Input pin to activate (high) / deactivate (low) the complete Driver IC
13
CL
Charge pump capacitor - terminal
14
CH
Charge pump capacitor + terminal
15
VS
Supply Pin
16
GND
17
CB
18
GND
19
SL3
Pin for source connection of high side MOSFET 3
20
GL3
Output pin for gate of low side MOSFET 3
21
SH3
Pin for source connection of high side MOSFET 3
22
GH3
Output pin for gate of high side MOSFET 3
23
BH3
Pin for + terminal of the bootstrap capacitor of phase 3
24
SL2
Pin for source connection of high side MOSFET 2
25
GL2
Output pin for gate of low side MOSFET 2
26
SH2
Pin for source connection of high side MOSFET 2
27
GH2
Output pin for gate of high side MOSFET 2
28
BH2
Pin for + terminal of the bootstrap capacitor of phase 2
29
SL1
Pin for source connection of high side MOSFET 1
30
GL1
Output pin for gate of low side MOSFET 1
31
SH1
Pin for source connection of high side MOSFET 1
32
GH1
Output pin for gate of high side MOSFET 1
33
BH1
Pin for + terminal of the bootstrap capacitor of phase 1
34
VDH
Voltage input common drain high side for short circuit detection
35
GND
36
SCDL
Cooling GND
Tab
Output of charge pump; connect to buffer capacitor
Input pin for adjustable Short Circuit Detection function, connect to GND via resistor
Should be connected to GND
All GND pins and Cooling Tab should be interconnected.
Data Sheet
6
Rev. 2.4, 2010-07-16
TLE7185-1E
General Product Characteristics
4
General Product Characteristics
4.1
Absolute Maximum Ratings
Absolute Maximum Ratings 1)
40 °C ≤ Tj ≤ 150 °C; all voltages with respect to ground, positive current flowing into pin (unless otherwise specified)
Pos.
Parameter
Symbol
Limit Values
Min.
Max.
Unit
Conditions
Voltages
4.1.1
Supply voltage
VS
-0.3
45
V
–
4.1.2
Supply voltage
VSR1
-1.0
45
V
t < 60s, 5x
4.1.3
Supply voltage
VSR2
-4.0
45
V
RVS ≥ 4.7Ω;;
500ms, 5x
4.1.4
Voltage range at VDH
VVDH
-0.3
55
V
–
4.1.5
Voltage range at VDH
VVDHR1
-4.0
55
V
RVDH ≥10Ω;
500ms, 5x
4.1.6
Voltage range at IHx, ILx, ENA, INH,
STOE
VDP
-0.3
18
V
–
4.1.7
Voltage range at ERRx
VERR
-0.3
18
V
RERR ≥ 5kΩ
4.1.8
Voltage range at SCDL
VSCDL
-0.3
18
V
RSCDL ≥ 10kΩ
4.1.9
Voltage range at DT
VDT
-0.3
6
V
–
4.1.10
Voltage range at BHx
VBH
-0.3
55
V
–
4.1.11
Voltage range at GHx
VGH
-0.3
55
V
–
4.1.12
Voltage range at GHx
VGHP
-7.0
55
V
t<1µs / f=50kHz
4.1.13
Voltage range at SHx
VSH
-2.6
45
V
–
4.1.14
Voltage range at SHx
VSHP
-7.0
45
V
t<1µs / f=50kHz
4.1.15
Voltage range at GLx
VGL
-1.0
18
V
–
4.1.16
Voltage range at GLx
VGLP
-7.0
18
V
t<0.5µs /f=50kHz
4.1.17
Voltage range at SLx
VSL
-1.0
5.0
V
–
4.1.18
Voltage range at SLx
VSLP
-7.0
7.0
V
t<0.5µs /f=50kHz
4.1.19
Voltage difference Gxx-Sxx
VGS
-0.3
15
V
–
4.1.20
Voltage difference BHx-SHx
VBS
-0.3
15
V
–
4.1.21
Minimum bootstrap capacitor CBS
CBS
330
–
nF
–
4.1.22
Voltage range at CL
VCL
-0.3
25
V
–
4.1.23
Voltage range at CH, CB
VCHB
-0.3
25
V
–
4.1.24
Voltage difference CH-CL
VCHL
-0.3
25
V
–
Temperatures
4.1.25
Junction temperature
Tj
-40
150
°C
–
4.1.26
Storage temperature
Tstg
-55
150
°C
–
Ptot
–
3
W
–
Power Dissipation
4.1.27
Power Dissipation (DC) @
TCASE=135°C
ESD Susceptibility
Data Sheet
7
Rev. 2.4, 2010-07-16
TLE7185-1E
General Product Characteristics
Absolute Maximum Ratings (cont’d)1)
40 °C ≤ Tj ≤ 150 °C; all voltages with respect to ground, positive current flowing into pin (unless otherwise specified)
Pos.
4.1.28
4.1.29
Parameter
Symbol
ESD Resistivity
CDM
2)
3)
Limit Values
Unit
Conditions
Min.
Max.
VESD
-2
2
kV
–
VCDM
-500
500
V
–
1) Not subject to production test, specified by design.
2) ESD susceptibility HBM according to EIA/JESD 22-A 114B
3) ESD susceptibility, Charged Device Model “CDM” EIA/JESD22-C101 or ESDA STM5.3.1
Note: Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
Note: Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are
not designed for continuous repetitive operation.
4.2
Pos.
4.2.1
Functional Range
Parameter
Supply voltage
Symbol
1)
2)
Limit Values
Unit
Conditions
Min.
Max.
VS
IQ
5.5
32
V
–
–
22
µA
VS,VDH<15V;
INH=Low; Tj<85°C
4.2.2
Quiescent current
4.2.3
Supply current at Vs (device
disabled)
IVs(0)
–
20
mA
–
4.2.4
Supply current at Vs (device
enabled)
IVs(1)
–
80
mA
6xQGxfPWM≤30mA;
Vs=5.5..16V;
4.2.5
Supply current at Vs (device
enabled)
IVs(2)
–
45
mA
6xQGxfPWM≤30mA;
Vs=16..32V;
4.2.6
Duty cycle HS
0
95
%
4.2.7
Duty cycle LS
DHS
DLS
0
100
%
fPWM=20kHz;
continuous
operation;
CBSx≥330nF
4.2.8
Charge pump capacitor
1.0
4.7
µF
–
4.2.9
Buffer capacitor
CCP
CCB
1.0
4.7
µF
–
1) For wake up of driver min. 6.5V Vs are required
2) total current consumption from power net (Vs and VDH)
The limitations in the PWM frequency are given by thermal constraints and limitations in the duty cycle (charging
time of bootstrap capacitor).
Note: Within the functional range the IC operates as described in the circuit description. The electrical
characteristics are specified within the conditions given in the related electrical characteristics table.
Data Sheet
8
Rev. 2.4, 2010-07-16
TLE7185-1E
General Product Characteristics
4.3
Thermal Resistance
Note: This thermal data was generated in accordance with JEDEC JESD51 standards. For more information, go
to www.jedec.org.
Pos.
4.3.1
4.3.2
Parameter
Junction to Case
Symbol
1)
Junction to Ambient
RthJC
1)
RthJA
Limit Values
Unit
Min.
Typ.
Max.
–
–
5
–
29
–
Conditions
K/W
–
K/W
2)
1) Not subject to production test, specified by design.
2) Exposed Heatslug Package use this sentence: Specified RthJA value is according to Jedec JESD51-2,-5,-7 at natural
convection on FR4 2s2p board; The Product (Chip+Package) was simulated on a 76.2 x 114.3 x 1.5 mm board with 2 inner
copper layers (2 x 70µm Cu, 2 x 35µm Cu). Where applicable a thermal via array under the exposed pad contacted the first
inner copper layer.
4.4
Default State of Inputs
Table 1
Default State of Inputs (if left open)
Characteristic
State
Remark
Default state of ILx
Low
Low side MOSFETs off
Default state of IHx
High
High side MOSFETs off
Default state of ENA
Low
Device outputs disabled
Default state of INH
Low
Sleep mode, IQ < 22 µA
Default state of STOE
Low
Shoot through option is disabled
Note: To activate the driver both INH and ENA must be pulled high. To allow shoot through all ILx pins must be
pulled high, all IHx must be pulled low and STOE must be pulled high
Data Sheet
9
Rev. 2.4, 2010-07-16
TLE7185-1E
Description and Electrical Characteristics
5
Description and Electrical Characteristics
5.1
MOSFET Driver
5.1.1
Output Stages
The 3 low side and 3 high side powerful push-pull output stages of the TLE7185-1E are all floating blocks, each
with its own source pin. This allows the direct connection of the output stage to the source of each single MOSFET,
allowing a perfect control of each gate-source voltage even when 200A are driven in the bridge with rise and fall
times below 1µs.
All 6 output stages have the same output power and thanks to the used bootstrap principle they can be switched
all up to 30kHz.
To ensure high gate voltages even at low battery voltages, the driver IC has an integrated charge pump. It allows
operation of normal level MOSFETs down to 5.5V supply.
Each output stage has its own short circuit detection block. For more details about short circuit detection see
Chapter 5.2.1.1)
VS
INH
CL CH
CB
VDH
BHx
BHx
Charge pump
CB
_____
ERR1
_____
ERR2
ENA
Error logic
Reset
Power On Reset
Under voltage warning CB
Under voltage lock out Vs
Over voltage warning Vs & VDH
Over temperature warning
Short circuit
+
GHx
-
VDH
V SCP
SCD
SCD
SHx
Level
shifter
Floating HS driver 3x
SCD
STOE
___
IH1
IL1
___
IH2
IL2
___
IH3
IL3
CB1
lock /
unlock
short circuit filter
Short Circuit
Detection Level
+
Input Logic
Shoot Through
Protection
Dead Time
GLx
-
ON / OFF
V SCP
SLx
Level
shifter
ON / OFF
Shoot Through
Option
Floating LS driver 3x
DT
STOE
GND
SCDL
Figure 3
Block Diagram of Driver Stages including Short Circuit Detection
5.1.2
Operation at Vs<12V - Integrated Charge Pump
The TLE7185-1E provides a feature tailored to the requirements in 12V automotive applications. Often the
operation of an application has to be assured even at 9V supply voltage or lower. Normally bridge driver ICs
1) The high side outputs are not designed to be used for low side MOSFETs; the low side outputs are not designed to be used
for high side MOSFETs
Data Sheet
10
Rev. 2.4, 2010-07-16
TLE7185-1E
Description and Electrical Characteristics
provide in such conditions clearly less than 9V to the gate of the external MOSFETs, increasing their RDSon and
the associated power dissipation.
The TLE7185-1E has a charge pump circuitry for external capacitors.
The operation of the charge pump is independent upon the pulse pattern of the MOSFETs.
The output of the charge pump is regulated to about 12V.
The output of the charge pump supplies the output stages for the low side MOSFETs with sufficient voltage to
assure 10V at the MOSFETs´ gate even if the supply voltage is below 10V.
It supplies as well the bootstrap circuitry for the high side output stages. Off course the bootstrap principle leads
to the fact that the bootstrap capacitors needs to be charged regularly. The charging time for the bootstrap
capacitor is specified (duty cycle HS) as well as the current consumption from the bootstrap capacitor in
permanent “on” condition.
The charge pump is only deactivated when the device is put into sleep mode via INH.
During Start Up of the device it is not allowed to have any PWM patterns at the ILx and IHx pins until the charge
pumps have ramped up to their final values or it is recommended to keep the ENA pin low.
The size of the charge pump capacitor (pump capacitors CCP as well as buffer capacitor CCB) can be varied
between 1 µF and 4.7 µF. Yet, larger capacitor values result in higher charge pump voltages and less voltage
ripple on the charge pump buffer capacitor CB. Besides the capacitance values the ESR of the buffer capacitor
CB determines the voltage ripple as well. It is recommended to use buffer capacitor CB that has small ESR.
Please. see also Chapter 5.1.3 for capacitor selection.
5.1.3
Sleep Mode
When the INH pin is set to low, the driver will be set to sleep mode. The INH pin switches off the complete supply
structure of the device and leads finally to an under voltage shut down of the complete driver. Enabling the device
with the INH pin means to switch on the supply structure. The device will run through power on reset during wake
up. It is recommended to perform a Reset by ENA after Wake up to remove possible ERR signals; Reset is
performed by keeping one or more ENA pins low until the charge pump voltages have ramped up.
Enabling and disabling with the INH pin is not very fast. For fast enable / disable the ENA pin is recommended.
When the TLE7185-1E is in INH mode (INH is low) or when the supply voltage is not available on the Vs pin, then
the driver IC is not supplied, the charge pump is inactive and the charge pump buffer capacitor as well as the
bootstrap capacitors are discharged.
5.1.4
Electrical Characteristics
Electrical Characteristics MOSFET drivers
VS = 5.5 to 32V, Tj = -40 to +150°C all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
Pos.
Parameter
Symbol
Limit Values
Min.
Typ.
Max.
Unit
Conditions
Inputs
5.1.1
Low level input voltage of ILx; IHx; VI_LL
ENA; STOE
–
–
1.0
V
–
5.1.2
High level input voltage of ILx; IHx; VI_HL
ENA; STOE
2.0
–
–
V
–
5.1.3
Input hysteresis of IHx; ILx; ENA;
STOE
dVI
100
–
–
mV
–
5.1.4
IHx pull up resistors
RIH
20
–
45
kΩ
pulled to 5V
Data Sheet
11
Rev. 2.4, 2010-07-16
TLE7185-1E
Description and Electrical Characteristics
Electrical Characteristics MOSFET drivers
VS = 5.5 to 32V, Tj = -40 to +150°C all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
Pos.
Parameter
Symbol
5.1.5
ILx; ENA; STOE pull down resistors RIL
5.1.6
INH pull down resistor
5.1.7
Low level input voltage of INH
5.1.8
High level input voltage of INH
Limit Values
Unit
Conditions
Min.
Typ.
Max.
20
–
45
kΩ
–
RIL_INH
VINHL
VINHH
30
–
75
kΩ
–
–
–
0.75
V
–
2.5
–
–
V
–
Charge pump
5.1.9
Charge pump output voltage
VCB
11
–
13.5
V
Vs=7..32V;
6xQGxfPWM≤30mA
5.1.10
Charge pump frequency
fCP
38
55
72
kHz
–
RSou
RSink
VGxx
–
–
13.5
Ω
–
–
–
9.0
Ω
–
–
–
13.5
V
VS<32V,
MOSFET driver output
5.1.11
Output source resistance
5.1.12
Output sink resistance
5.1.13
High level output voltage
6xQGxfPWM≤30mA
5.1.14
High level output voltage
VGxx
9
10
–
V
Vs=7V,
6xQGxfPWM≤30mA,
D.C.=94%;
fPWM=20kHz
5.1.15
High level output voltage
–
–
1.2
V
INH=low or UVLO1)
5.1.16
Pull down resistor at BHx to GND
30
–
80
kΩ
INH=low or UVLO
5.1.17
Pull down resistor at CB to GND
10
–
30
kΩ
INH=low or UVLO
5.1.18
Bias current into BHx
VGUV
RINH
RCBUV
IBH
–
–
120
µA
VBSx>5V;
no switching
5.1.19
Bias current out of SHx
ISH
–
40
–
µA
INH=ENA=high;
IHx =high;
VBSx=5V..13.0V
5.1.20
Bias current out of SLx
ISL
–
–
1
mA
0V≤VSH≤VS+1V;
no switching;
VBSx≥5V
5.1.21
Programmable internal dead time
tDT
0.08
0.25
0.62
1.0
2.0
0.14
0.41
1.05
1.85
3.82
0.20
0.57
1.45
2.7
5.6
µs
RDT=0 Ω
RDT=10 kΩ
RDT=47 kΩ
RDT=100 kΩ
RDT=1000 kΩ
5.1.22
Max. internal dead time
tDT_MAX
2.3
–
6.4
µs
DT pin open
5.1.23
Input propagation time (low on)
0
–
200
ns
5.1.24
Input propagation time (low off)
0
–
200
ns
CLoad=11nF;
RLoad=1Ω
5.1.25
Input propagation time (high on)
0
–
200
ns
5.1.26
Input propagation time (high off)
0
–
200
ns
5.1.27
Absolute input propagation time
difference between above
propagation times
tP(ILN)
tP(ILF)
tP(IHN)
tP(IHF)
tP(an)
–
–
100
ns
Data Sheet
12
Rev. 2.4, 2010-07-16
TLE7185-1E
Description and Electrical Characteristics
Electrical Characteristics MOSFET drivers
VS = 5.5 to 32V, Tj = -40 to +150°C all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
Pos.
Parameter
Symbol
Limit Values
Min.
Typ.
Max.
Unit
Conditions
Wake up / Inhibit
5.1.28
INH propagation time to disable the tINH_Pdis
output stages
–
–
10
µs
–
5.1.29
Wake up time; INH low to high
tINH_Pen1
–
–
20
ms
Vs=6.5..8V
Driver fully
functional;
ENA=low;
CCB=4.7µF
5.1.30
Wake up time; INH low to high
tINH_Pen2
–
–
10
ms
Vs=8..32V
Driver fully
functional;
ENA=low;
CCB=4.7µF
1) Not subjected to production test; specified by design
Data Sheet
13
Rev. 2.4, 2010-07-16
TLE7185-1E
5.2
Protection and Diagnostic Functions
5.2.1
Short Circuit Protection
The TLE7185-1E provides a short circuit protection for the external MOSFETs. It is a monitoring of the drainsource voltage of the external MOSFETs. As soon as this voltage is higher than the short circuit detection level, a
timer will start to run.
The short circuit detection level is programmable from outside by applying a voltage divider at the SCDL pin. The
applied voltage at this pin will be used as short circuit detection level up to the specified maximum level. Above
this level the short circuit detection is deactivated.
After a delay tSCP all external MOSFETs will be switched off until the driver is reset by the ENA pin. The error flag
is set.
The drain-source voltage monitoring of the short circuit detection for a certain external MOSFET is active as soon
as the corresponding input is set to "on" and the dead time is expired.
For safety reasons a pull up resistor at the SCDL pin assures that in case of an open pin the SCDL voltage is pulled
to high levels. In this case, the SCD is deactivated an error signal is set. This function is self clearing when the
voltage at SCDL returns to the specified level.
The short circuit detection filter is realized with a capacitor, which is discharged with a current source with X µA.
In case the output stage is switched on and the VDS of the MOSFET is still above SCDL, the capacitor is charged
with a current source with Y µA. If this capacitor is charged to a specific voltage level, the short circuit is detected,
the ERR signals are set and the MOSFETs switched off. The SCD charge and discharge ratio is defined as
(Y-X)/X.
This ratio defines down to which duty cycle the short circuit can be detected.
It has to be considered that the high side and the low side output of one phase are working with the same capacitor,
defining the maximum switching time, which is allowed without short circuit detection. This maximum allowed
switching time in normal operation is defined by dnoSCD/2*fPWM.
This behavior is specified as “maximum duty cycle for no short circuit detection” and “minimum duty cycle for
periodic short circuit detection”
5.2.2
Dead Time and Shoot Through Protection
In bridge applications it has to be assured that the external high side and low side MOSFETs are not "on" at the
same time, connecting directly the battery voltage to GND. The dead time generated in the TLE7185-1E is fixed
to a minimum value if the DT pin is connected to GND. This function assures a minimum dead time if the input
signals coming from the µC are faulty.
The dead time can be increased beyond the internal fixed dead time by connecting the DT pin via a dead time
resistor RDT to GND - the larger the dead time resistor the larger the dead time (for details pls. see the “Dynamic
Characteristic” table in the MOSFET driver section).
The exact dead time of the bridge is usually controlled by the PWM generation unit of the µC.
In addition to this dead time, the TLE7185-1E provides a locking mechanism, avoiding that both external
MOSFETs of one half bridge can be switched on at the same time. This functionality is called shoot through
protection.
If the command to switch on both high and low side switches in the same half bridge is given at the input pins, the
command will be ignored.
Data Sheet
14
Rev. 2.4, 2010-07-16
TLE7185-1E
5.2.3
Shoot Through Option
The TLE7185-1E offers the possibility to switch off the Shoot Through Protection by setting the STOE pin to high
and in the same time all IHX to low and all ILX to high. Only if all 7 conditions are fulfilled in the same time, the
Shoot Through Protection and the Short Circuit Detection is deactivated and allows to switch on all 6 external
MOSFETs.
If STOE is set to high, an error signal is set.
5.2.4
Under Voltage Lock Out on Vs
The TLE7185-1E has an integrated under voltage lock out, to assure that the behavior of the device is predictable
in all supply voltage ranges.
If the supply voltage at VS reaches the under voltage lock out level for a minimum specified filter time, the gatesource voltage of all external MOSFETs will be actively pulled to low. In this situation the short circuit detection of
this output stage is deactivated to avoid a latching shut down of the driver. Furthermore, the charge pump will be
deactivated.
As soon as the supply voltage recovers, the output stage condition will be aligned to the input patterns
automatically. This allows to continue operation of the motor in case of under voltage shut down without a reset
by the µC.
5.2.5
Under Voltage warning on CB
In addition to the under voltage lockout, the TLE7185-1E provides an integrated under voltage warning.
The purpose of this warning is to inform the user about possible low gate voltages.
If the voltage of a charge pump buffer capacitor CB reaches the under voltage warning level for a minimum
specified filter time, an Errors signal is set.
As soon as the charge pump buffer voltage recovers, the Error signal will be removed automatically.
5.2.6
Over Voltage Warning on Vs and / or VDH
The TLE7185-1E has an integrated over voltage warning to avoid destruction of the IC at high supply voltages.
The voltage is observed at the VS and the VDH pin. When one of them or all of them exceed the over voltage
warning level for more than the specified filter time an Error signal is set. It is in the responsibility of the user to
react to this signal to avoid damage of the driver by exceeding the max ratings. The Errors signal is self clearing.
The basic driver functions will work even above this over voltage warning level as long as no maximum rating is
violated. At such high voltages, the specified values will not be guaranteed.
5.2.7
Over Temperature Warning
If the junction temperature is exceeding the over temperature level an error signal is given as warning. The driver
IC will continue to operate in order not to disturb the application.
The warning is removed automatically when the junction temperature is cooling down.
It is in the responsibility of the user to protect the device against over temperature destruction.
5.2.8
ERR Pins
The TLE7185-1E has two status pins to provide diagnostic feedback to the µC. The outputs of these pins are open
drain outputs with integrated pull up resistors to the internal 5V supply (see Figure 4 ). The outputs are either high
or low.
Data Sheet
15
Rev. 2.4, 2010-07-16
TLE7185-1E
5V
TLE7185E
internal
____
ERR
ERR - Logic
GND
Figure 4
Structure of ERR output
Table 2
Overview of error conditions
ERR1
ERR2
Driver conditions
Driver action
Restart
High
High
no errors
Fully functional
–
High
Low
Over temperature
Warning only
Self clearing
Low
High
Over voltage VS/VDH or Warning only
under voltage CB
Self clearing
Low
High
Under voltage lockout
based on Vs
Deactivation of driver
output and charge
pump
Self clearing
Low
Low
STOE pin High
Warning only
Self clearing
Low
Low
SCDL open pin
Warning only; SCD
deactivated;
Self clearing
Low
Low
Short circuit detection
All MOSFETs actively Reset at ENA needed
switched off
Reset of ERROR Registers and Disable
The TLE7185-1E can be reseted by the enable pin ENA. If the ENA pin is pulled to low for a specified minimum
time, the error registers are cleared. During reset (ENA = low) the driver outputs are disabled and the external
MOSFETs are switched off actively. Furthermore, the Short Circuit Detection SCD is deactivated as long as ENA
= low.
During disable (ENA = low) any error is shown. However, the Short circuit detection error is reset (error is cleared)
and can not reoccur as the output stages which drive the external MOSFETs are disabled.
In case of under voltage lockout, the ERR pins deviate from the table above as the charge pump is not active and
the TLE7185E is not biased properly.
Data Sheet
16
Rev. 2.4, 2010-07-16
TLE7185-1E
5.2.9
Electrical Characteristics
Electrical Characteristics - Protection and diagnostic functions
VS = 5.5 to 32V, Tj = -40 to +150°C, all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
Pos.
Parameter
Symbol
Limit Values
Min.
Typ.
Unit
Conditions
Max.
ERR pins
5.2.1
ERRx output (open drain)
5.2.2
Fall time ERRx (80 - 20 %)
VERR
tf(ERR)
–
–
0.6
V
I=100µA
–
–
1
µs
CLOAD=100pF;
VS=7V;
RLoad=100kΩ
5.2.3
Internal pull up resistor ERRx
Rf(ERR)
15
22
35
kΩ
pulled to 5V
Tj(OW)
dTj(OW)
160
170
180
°C
–
10
–
20
°C
–
Over temperature
5.2.4
Over temperature warning
5.2.5
Hysteresis for over temperature
warning
Short circuit protection
5.2.6
Short circuit protection detection
level
VSCP
0.3
–
2
V
programmed by
SCDL pin
5.2.7
Short circuit protection detection
Accuracy
ASCP
-30
–
+30
%
0.3V≤VSCDL<1.2V
5.2.8
Short circuit protection detection
Accuracy
ASCP
-10
–
+10
%
1.2V≤VSCDL≤2.0V
5.2.9
Filter time of short circuit protection tSCP(off)
5
–
12
µs
–
5.2.10
Maximum duty cycle for no periodic dnoSCD
short circuit detection
–
–
12
%
5.2.11
Minimum duty cycle for periodic
short circuit detection
dpSCD
28
–
–
%
static short circuit
applied; only one
input switched (IHx
or ILx), fPWM=40kHz
5.2.12
Internal pull up resistor SCDL
80
140
200
kΩ
pulled to 5V
5.2.13
SCDL open pin detection level
2.0
–
2.5
V
–
5.2.14
Filter time of SCDL open pin
1
–
3
µs
–
5.2.15
SCDL open pin detection level
hysteresis
RSCDL
VSCPOP
tSCPOP
VSCOPH
V
–
Over voltage warning at Vs and/or
VDH
VOV
32
V
Vs and/or VVDH
5.2.17
Over voltage warning filter time
5.2.18
Over voltage warning hysteresis
5.2.19
Under voltage lockout at Vs
5.2.20
Under voltage lockout filter time
5.2.21
Under voltage lockout hysteresis
5.2.22
Under voltage warning at CB
5.2.23
Under voltage warning filter time
5.2.24
Under voltage warning hysteresis
tOV
VH_OV
VUVLO
tUVLO
VUVLOH
VUV
tUV
VUVH
0.3
Over- and under voltage
5.2.16
Data Sheet
–
35
increasing
10
–
25
µs
–
2
–
4
V
–
–
–
5.5
V
Vs decreasing
1
–
4
µs
–
–
0.25
–
V
–
9.5
–
10.5
V
VCB decreasing
10
–
20
µs
–
–
0.25
–
V
–
17
Rev. 2.4, 2010-07-16
TLE7185-1E
Electrical Characteristics - Protection and diagnostic functions (cont’d)
VS = 5.5 to 32V, Tj = -40 to +150°C, all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
Pos.
Parameter
Symbol
Limit Values
Unit
Conditions
Min.
Typ.
Max.
3.0
–
–
µs
–
–
–
0.5
µs
–
–
–
1.5
µs
high to low
–
–
1.0
µs
–
Reset and Enable
tRes1
tRes0
5.2.25
Reset time to clear ERR registers
5.2.26
Low time of ENA signal without
reset
5.2.27
tPENA_H-L
Return time to normal operation at tAR
5.2.28
ENA propagation time
auto-restart
Data Sheet
18
Rev. 2.4, 2010-07-16
TLE7185-1E
Application Description
6
Application Description
In the automotive sector there are more and more applications requiring high performance motor drives, such as
electro-hydraulic or electric power steering. In these applications 3 phase motors, synchronous and
asynchronous, are used, combining high output performance, low space requirements and high reliability.
KL 15
VBAT
R INH1
R VS
4.7 Ω
C BR
4,7mF
C VS
2.2µF
R INH2
PGND
CBR
1µF
PGND
RVDH
INH
VS
CB
VDH
BH1
CCB 2.2uF
CBS1
470nF
GH1
GND
SH1
BH2
CL
CCP 1uF
CBS2
470nF
GH2
CH
SH2
BH3
RERR1
5kΩ
R GH2
CBS3
470nF
GH3
ERR2
µC
or
digital
ASIC:
e.g.:
XC23xx
R GH1
SH3
RERR2
5kΩ
RGH3
ERR1
TLE7185E
GL1
STOE
RGL1
SL1
ENA
IL1
GL2
IH1
RGL2
IL2
SL2
IH2
IL3
GL3
IH3
R GL3
SL3
5V
RSCDL1
SCDL
RSCDL2
DT
GND
R DT
GND
Figure 5
GND
GND
PGND
Application Circuit
Note: This is a very simplified example of an application circuit. The function must be verified in the real application.
Data Sheet
19
Rev. 2.4, 2010-07-16
TLE7185-1E
Package Outlines
Package Outlines
8° MAX.
1.1
7.6 -0.2 1)
0.65
0.7 ±0.2
C
17 x 0.65 = 11.05
0.33 ±0.08 2)
0.23 +0.09
0.35 x 45°
2.65 MAX.
0...0.10
STAND OFF
2.45 -0.2
7
0.1 C 36x
SEATING PLANE
10.3 ±0.3
0.17 M A-B C D 36x
D
Bottom View
A
19
19
36
Exposed Diepad
4.6
36
18
1
18
B
5.2
1
Index Marking
12.8 -0.21)
Index Marking
1) Does not include plastic or metal protrusion of 0.15 max. per side
2) Does not include dambar protrusion of 0.05 max. per side
P-PG-DSO-36-38 V07
Figure 6
PG-DSO-36-38
Green Product (RoHS compliant)
To meet the world-wide customer requirements for environmentally friendly products and to be compliant with
government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e
Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).
You can find all of our packages, sorts of packing and others in our
Infineon Internet Page “Products”: http://www.infineon.com/products.
Data Sheet
20
Dimensions in mm
Rev. 2.4, 2010-07-16
2010-07-16
TLE7185-1E
Revision History
8
Revision History
Version
Date
Changes
Rev. 2.4
2010-07-16
Change of Name and Marking
Rev. 2.3
2009-08-18
Parameter Chapter 5.1.8 High level input voltage INH minimum value to 2.5V
Rev. 2.2
2009-01-13
chapter 7: package outline updated (Stand-off reduced)
Rev. 2.1
2008-10-08
parameter 5.1.20 RSHSL deleted
Data Sheet
21
Rev. 2.4, 2010-07-16
TLE7185-1E
Revision History
Data Sheet
22
Rev. 2.4, 2010-07-16
Edition 2010-07-16
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2010 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
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