PTF081301E PTF081301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 869 – 960 MHz Description The PTF081301E and PTF081301F are 130-watt, internally-matched GOLDMOS FETs intended for EDGE and CDMA applications in the 869 to 960 MHz bands. Thermally-enhanced packaging provides the coolest operation available. Full gold metallization ensures excellent device lifetime and reliability. EDGE Modulation Spectrum Performance TCASE = 25°C TCASE = 90°C Efficiency -50 40 400 kHz -60 • Thermally-enhanced packages • Broadband internal matching • Typical EDGE performance - Average output power = 65 W - Gain = 18 dB - Efficiency = 40% • Typical CW performance - Output power at P–1dB = 150 W - Gain = 17 dB - Efficiency = 55% 50 30 Drain Efficiency (%) Modulation Spectrum (dB) 60 -40 PTF081301F Package 31248 Features V DD = 28 V, IDQ = 950 mA, f = 959.8 MHz -30 PTF081301E Package 30248 -70 20 -80 10 • Integrated ESD protection: Human Body Model, Class 1 (minimum) 0 • Excellent thermal stability • Low HCI drift • Capable of handling 10:1 VSWR @ 28 V, 130 W (CW) output power 600 kHz -90 36 38 40 42 44 46 48 50 Output Power (dBm) RF Characteristics EDGE Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ = 950 mA, P OUT = 65 W, f = 959.8 MHz Characteristic Symbol Min Typ Max Unit EVM (RMS) — 2.5 — % Modulation Spectrum @ 400 kHz ACPR — –62 — dBc Modulation Spectrum @ 600 kHz ACPR — –74 — dBc Gain Gps — 18 — dB Drain Efficiency ηD — 40 — % Error Vector Magnitude All published data at TCASE = 25°C unless otherwise indicated ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet 1 of 11 Rev. 03, 2005-05-02 PTF081301E PTF081301F RF Characteristics (cont.) Two-Tone Measurements (tested in Infineon test fixture) VDD = 28 V, IDQ = 950 mA, POUT = 130 W PEP, f = 960 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Max Unit Gain Gps 17 18 — dB Drain Efficiency ηD 40 42 — % Intermodulation Distortion IMD — –32 –29 dBc DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 µA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, V GS = 0 V IDSS — — 1.0 µA On-State Resistance VGS = 10 V, IDS = 1 A RDS(on) — 0.1 — Ω Operating Gate Voltage VDS = 28 V, IDQ = 950 mA VGS 2.5 2.9 4.0 V Gate Leakage Current VGS = 10 V, V DS = 0 V IGSS — — 1.0 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –0.5 to +12 V Junction Temperature TJ 200 °C Total Device Dissipation PD 473 W 2.70 W/°C Above 25°C derate by Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C) RθJC 0.37 °C/W Ordering Information Type Package Outline Package Description Marking PTF081301E 30248 Thermally-enhanced slotted flange, single-ended PTF081301E PTF081301F 31248 Thermally-enhanced earless flange, single-ended PTF081301F Data Sheet 2 of 11 Rev. 03, 2005-05-02 PTF081301E PTF081301F Typical Performance (measurements taken in production test fixture) IM3 vs. Output Power at Selected Biases Broadband Performance V DD = 28 V, f1 = 959, f2 = 960 MHz, series show IDQ VDD = 28 V, IDQ = 950 mA, POUT = 51.14 dBm 55 IMD (dBc) -30 -35 850 mA -40 950 mA -45 15 Efficiency 45 5 Return Loss 35 -5 25 -15 Return Loss (dB) Gain (dB), Efficiency (%) -25 Gain 1050 mA 15 860 -50 39 41 43 45 47 49 880 900 940 -25 960 Frequency (MHz) Output Power (dBm ), Avg. Power Sweep Gain & Efficiency vs. Output Power V DD = 28 V, f = 960 MHz V DD = 28 V, IDQ = 950 mA, f = 960 MHz 19.0 70 21 Efficiency IDQ = 1425 mA 18.5 60 20 18.0 50 19 17.5 17.0 Gain (dB) Power Gain (dB) 920 IDQ = 950 mA Gain 18 40 17 30 16.0 16 20 15.5 15 10 IDQ = 475 mA 16.5 15.0 14 40 42 44 46 48 50 52 54 Data Sheet 0 40 Output Power (dBm) Drain Efficiency (%) 37 42 44 46 48 50 52 54 Output Power (dBm) 3 of 11 Rev. 03, 2005-05-02 PTF081301E PTF081301F Typical Performance (cont.) IS-95 CDMA Performance Output Power (at 1 dB Compression) vs. Supply Voltage VDD = 28 V, IDQ = 950 mA, f = 860 MHz Drain Efficiency (%) 52 51 -40 35 -45 30 -50 25 -60 20 Efficiency 15 -70 -75 ADJ f C + 1.98 MHz -80 0 24 26 28 30 32 30 32 Supply Voltage (V) 34 36 38 40 42 44 46 Output Power (dBm), Avg. IS-95 CDMA Performance EDGE EVM Performance V DD = 28 V, IDQ = 950 mA, f = 860 MHz V DD = 28 V, IDQ = 950 mA, f = 959.8 MHz 35 6.0 30 EVM RMS (average %) . Gain (dB), Efficiency (%) -65 10 5 50 -55 ACP f C – 0.75 MHz 25 20 Gain 15 10 Efficiency 5 60 TCASE = 25°C TCASE = 90°C 5.0 50 4.0 40 3.0 30 Efficiency 2.0 20 Drain Efficiency (%) Output Power (dBm) TCASE = 25°C TCASE = 90°C 40 53 Adjacent Channel Power Ratio (dBc) IDQ = 950 mA, f = 960 MHz 10 1.0 EVM 0 0.0 0 30 32 34 36 38 40 42 44 36 46 40 42 44 46 48 50 Output Power (dBm) Average Output Power (dBm) Data Sheet 38 4 of 11 Rev. 03, 2005-05-02 PTF081301E PTF081301F Typical Performance (cont.) Three-Carrier CDMA 2000 Performance Intermodulation Distortion vs. Output Power VDD = 28 V, IDQ = 950 mA, f = 960 MHz -20 -30 Drain Efficiency (%) Efficiency 30 -40 ACP f C – 1.98 MHz -50 ALT f C – 3.21 MHz -60 15 -70 ALT f C + 5.23 MHz -80 0 30 32 34 36 38 40 42 44 46 48 50 -20 3rd Order -30 IMD (dBc) 45 Adjacent Channel Power Ratio (dBc) VDD TCASE = 25°C TCASE = 90°C (as measured in a broadband circuit) = 28 V, IDQ = 950 mA, f1 = 959 MHz, f2 = 960 MHz -40 5th -50 -60 7th -70 -80 37 Output Power (dBm), Avg. 39 41 43 45 47 49 Output Power (dBm), PEP Gate-Source Voltage vs. Temperature Normalized Bias Voltage Voltage normalized to typical gate voltage, series show current. 1.03 0.8 A 1.02 3.0 A 1.01 5.2 A 7.6 A 1.00 9.9 A 0.99 12.0 A 0.98 0.97 0.96 0.95 -20 0 20 40 60 80 100 Case Temperature (ºC) Data Sheet 5 of 11 Rev. 03, 2005-05-02 PTF081301E PTF081301F TO WA R D GE NE Broadband Circuit Impedance Frequency Z Source Ω Z Load Ω R jX R jX 860 5.35 –3.80 1.59 0.99 920 5.41 –2.54 1.56 1.74 940 5.43 –2.16 1.56 1.91 960 5.42 –1.70 1.56 2.15 980 5.48 –1.24 1.50 2.34 0.2 0.1 980 MHz 860 MHz 0 .1 - MHz Z Source 860 MHz 0 .0 S 980 MHz ARD LOA D S TOW G Z Load NGTH V ELE -- W A Z Load - W AV ELENGTH S Z Source 0. 1 D Z0 = 50 Ω See next page for Reference Circuit Data Sheet 6 of 11 Rev. 03, 2005-05-02 PTF081301E PTF081301F Reference Circuit V DD QQ1 LM7805 C24 0.001µF R7 3.3KV C26 0.001µF R3 1.2KV C25 0.001µF Q1 R4 BCP56 1.3KV R5 10KV R6 22KV L1 R1 10V C1 + 10µF 35V C2 0.1µF 50V R2 5.1KV C7 33pF C3 33pF l7 l4 DUT RF_IN l1 C4 33pF l2 l3 C5 5.0pF l5 l6 C6 0.5pF l8 C8 1µF C9 1µF C13 6.8pF l9 l10 C14 6.8pF C15 0.5pF l11 C11 0.1µF 50V +C10 10µF 50V C17 33pF +C12 10µF 50V V DD RF_OUT l12 C16 0.3pF L2 C18 33pF C19 1µF C20 1µF +C21 10µF 50V C22 0.1µF 50V C23 + 10µF 50V 081301_sch Reference Circuit Schematic for 960 MHz Circuit Assembly Information DUT PCB PTF081301E or PTF081301F 0.76 mm [.030"] thick, εr = 4.5 Microstrip Electrical Characteristics at 960 MHz 1 l1 l2 l3 l4 l5 l6 l7, l8 l9 l10 l11 l12 LDMOS Transistor 2 oz. copper Dimensions: L x W (mm) 0.075 λ, 50.0 Ω 0.101 λ, 50.0 Ω 0.055 λ, 50.0 Ω 0.289 λ, 74.0 Ω 0.061 λ, 7.5 Ω 0.036 λ, 7.9 Ω 0.132 λ, 50.0 Ω 0.114 λ, 7.9 Ω 0.047 λ, 7.9 Ω 0.134 λ, 38.0 Ω 0.029 λ, 50.0 Ω 12.70 x 1.35 17.27 x 1.35 9.40 x 1.35 50.80 x 0.64 9.27 x 16.26 5.46 x 15.24 22.61 x 1.27 17.40 x 15.24 7.24 x 15.24 22.35 x 2.16 4.95 x 1.37 Rogers TMM4 Dimensions: L x W (in.) 0.500 0.680 0.370 2.000 0.365 0.215 0.890 0.685 0.285 0.880 0.195 x x x x x x x x x x x 0.053 0.053 0.053 0.025 0.640 0.600 0.050 0.600 0.600 0.085 0.054 1Electrical characteristics rounded Data Sheet 7 of 11 Rev. 03, 2005-05-02 PTF081301E PTF081301F Reference Circuit (cont.) R7 C12 C25 C26 C1 + 10 35V C2 VDD R5 R6 R1 R2 C3R4 R3 LM VDD QQ1 C24 L1 C7 Q1 C8 C9 C11 C10 C13 RF_IN C16 C17 RF_OUT C4 R5 C5 C18 C15 C21 C19 C20 VDD L2 C2 R6 R1 R2 C23 081301in_02 C25 C26 C1 C22 10 35V C14 + C6 R7 C3 081301out_02 LM R4 R3 Q1 QQ1 C24 081301_assy 081301_assy_dtl Reference Circuit* (not to scale) Component Description Suggested Manufacturer P/N or Comment C1 C2, C11, C22 C3, C4, C7, C17, C18 C5 C6, C15 C8, C9, C19, C20 C10, C12, C21, C23 C13, C14 C16 C24, C25, C26 L1, L2 Q1 QQ1 R1 R2 R3 R4 R5 R6 R7 Tantalum capacitor, TE Series, 10 µF, 35 V Capacitor, 0.1 µF, 50 V, 1206 Capacitor, 33 pF Capacitor, 5.0 pF Capacitor, 0.5 pF Capacitor, 1 µF, 50 V Tantalum cap, 10 µF, 50 V, TPS Series, SMD Capacitor, 6.8 pF Capacitor, 0.3 pF Capacitor, 0.001 µF, 50 V, 0603 Ferrite, 6 mm Transistor Voltage regulator Resistor, 10 ohms, 1/4 W, 1206 Resistor, 5.1 k-ohms, 1/4 W, 1206 Resistor, 1.2 k-ohms, 1/10 W, 0603 Resistor, 1.3 k-ohms, 1/10 W, 0603 Potentiometer, 10 k-ohms, 0.25 W Resistor, 22 k-ohms, 1/10 W, 0603 Resistor, 3.3 k-ohms, 1/4 W, 1206 Digi-Key Digi-Key ATC ATC ATC Digi-Key Garrett Electronics ATC ATC Digi-Key Ferroxcube Infineon National Semiconductor Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key PC56106-ND, SMD PCC104BCT-ND 100B 330 100B 5R0 100B 0R5 19528-ND TPSE106K050R0400 100B 6R8 100B 0R3 PCC1772CT-ND 53/3/4.6-452 BCP56 LM7805 P10ECT-ND 5.1KECT-ND P1.2KGCT-ND P1.3KGCT-ND 3224W-103ETR-ND P22KGCT-ND P3.3KECT-ND *Gerber files for this circuit are available on request. Data Sheet 8 of 11 Rev. 03, 2005-05-02 PTF081301E PTF081301F Package Outline Specifications Package 30248 (45° X 2.72 [.107]) C L 2X 4.83±0.51 [.190±.020] D 9.78 [.385] 19.43 ±0.51 [.765±.020] S LID 9.40 +0.10 -0.15 [.370+.004 -.006 ] C L G 2X 12.70 [.500] 2X R1.63 [.064] 4X R1.52 [.060] 27.94 [1.100] 1.02 [.040] 19.81±0.20 [.780±.008] SPH 1.57 [.062] 3.61±0.38 [.142±.015] 0.0381 [.0015] -A- 34.04 [1.340] 248-cases_30 Diagram Notes: 1. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001]. 2. All tolerances ± 0.127 [.005] unless specified otherwise. 3. Pins: D = drain, S = source, G = gate. 4. Interpret dimensions and tolerances per ASME Y14.5M-1994. 5. Primary dimensions are mm. Alternate dimensions are inches. 6. Gold plating thickness: S - flange: 2.54 micron (min) [100 microinch (min)] D, G - leads: 1.14 micron ± 0.38 micron [45 microinch ± 15 microinch] Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/products Data Sheet 9 of 11 Rev. 03, 2005-05-02 PTF081301E PTF081301F Package Outline Specifications (cont.) Package 31248 ( 45° X 2.72 [.107]) C L 4.83±0.51 [.190±.020] D +0.10 9.78 [.385] LID 9.40 -0.15 [.370+.004 -.006 ] CL 19.43±0.51 [.765±.020] G 2X 12.70 [.500] 19.81±0.20 [.780±.008] SPH 1.57 [.062] 1.02 [.040] 0.0381 [.0015] -A- S 20.57 [.810] 3.61±0.38 [.142±.015] 248-cases_31248 Diagram Notes: 1. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001]. 2. All tolerances ± 0.127 [.005] unless specified otherwise. 3. Pins: D = drain, S = source, G = gate. 4. Interpret dimensions and tolerances per ASME Y14.5M-1994. 5. Primary dimensions are mm. Alternate dimensions are inches. 6. Gold plating thickness: S - flange: 2.54 micron (min) [100 microinch (min)] D, G - leads: 1.14 micron ± 0.38 micron [45 microinch ± 15 microinch] Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/products Data Sheet 10 of 11 Rev. 03, 2005-05-02 PTF081301E/F Confidential – Internal Distribution Revision History: 2005-05-02 2004-08-27, Data Sheet Previous Version: Data Sheet Page Subjects (major changes since last revision) 1, 2 7, 8 PTF081301F released Circuit descriptions 9, 10 Add and revise case outlines We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: [email protected] To request other information, contact us at: +1 877 465 3667 (1-877-GOLDMOS) USA or +1 408 776 0600 International GOLDMOS® is a registered trademark of Infineon Technologies AG. Edition 2005-05-02 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 München, Germany © Infineon Technologies AG 2004. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 11 of 11 Rev. 03, 2005-05-02