PTFA212002E Thermally-Enhanced High Power RF LDMOS FET 200 W, 2110 – 2170 MHz Description The PTFA212002E is a 200-watt, internally-matched, laterally doublediffused, GOLDMOS push-pull FET. It is characaterized for singleand two-carrier WCDMA operation from 2110 to 2170 MHz. Thermally-enhanced packaging provides the coolest operation available. Full gold metallization ensures excellent device lifetime and reliability. Two–carrier WCDMA Drive–up VDD = 28 V, IDQ = 1600 mA, f1 = 2140 MHz, f2 = 2150 MHz, 3GPP WCDMA signal, P/A R = 8.0 dB, 3.84 MHz BW • Thermally-enhanced packaging • Broadband internal matching • Typical two-carrier WCDMA performance at 2140 MHz, 28 V - Average output power = 44 W - Gain = 15 dB - Efficiency = 27% - IM3 = –37 dBc - ACPR < –40 dBc • Typical CW performance at 2140 MHz, 28 V - Output power at P–1dB = 220 W - Efficiency = 56% • Integrated ESD protection: Human Body Model, Class 2 (minimum) • Excellent thermal stability • Low HCI drift • Capable of handling 10:1 VSWR @ 28 V, 200 W (CW) output power 35 Drain Efficiency -30 30 -35 25 -40 20 Gain -45 15 -50 10 IM3 ACPR -55 37 40 43 46 Efficiency (%), Gain (dB) IMD (dBc), ACPR (dBc) -25 PTFA212002E Package 30275 5 49 Output Power, Avg. (dBm) RF Characteristics WCDMA Measurements (tested in Infineon test fixture) VDD = 28 V, IDQ = 2 x 800 mA, POUT = 44 W average f1 = 2135 MHz, f2 = 2145 MHz, 3GPP signal, channel bandwidth = 3.84 MHz , peak/average = 8 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Gain Gps 14 15 — dB Drain Efficiency ηD 25.5 27 — % Intermodulation Distortion IMD — –37 –35 dBc All published data at TCASE = 25°C unless otherwise indicated ESD: Electrostatic discharge sensitive device—observe handling precautions! Preliminary Data Sheet 1 of 10 Rev. 02, 2005-05-16 PTFA212002E DC Characteristics (per side) Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, V GS = 0 V IDSS — — 1.0 µA Drain Leakage Current VDS = 63 V, V GS = 0 V IDSS — — 10 µA On-State Resistance VGS = 10 V, V DS = 0.1 V RDS(on) — 0.08 — Ω Operating Gate Voltage VDS = 28 V, IDQ = 800 mA VGS 2.0 2.5 3.0 V Gate Leakage Current VGS = 10 V, V DS = 0 V IGSS — — 1.0 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –0.5 to +12 V Junction Temperature TJ 200 °C Total Device Dissipation PD 795 W 4.55 W/°C Above 25°C derate by Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C, 200 W CW) RθJC 0.22 °C/W Ordering Information Type Package Outline Package Description Marking PTFA212002E 30275 Thermally-enhanced slotted flange, push-pull PTFA212002E Preliminary Data Sheet 2 of 10 Rev. 02, 2005-05-16 PTFA212002E Typical Performance (data taken in a production test fixture) Broadband Circuit Performance Power Sweep, CW Conditions VDD = 28 V, IDQ = 1600 mA, POUT = 46.4 dBm CW VDD = 28 V, IDQ = 1600 mA, f = 2140 MHz 17 -4 20 -6 Gain -8 15 -10 -12 10 Input Return 0 2070 -14 -16 2150 40 15 Gain 20 10 13 2190 40 43 49 52 55 Intermodulation Distortion Products Two–tone Drive–up vs. Tone Spacing VDD = 28 V, IDQ = 1600 mA, f = 2140 MHz, tone spacing = 10 MHz VDD = 28 V, IDQ = 1600 mA, POUT = 200 W PEP, f = 2140 MHz Drain Efficiency (%) -30 3rd Order IMD (dBc) 46 Output Power (dBm) Frequency (MHz) -25 30 14 -18 2110 50 -35 -40 5th Order -45 -50 7th Order 45 -20 40 -25 Efficiency 35 30 -35 IM3 25 -40 IM7 20 -45 15 -50 10 -55 IM5 5 -55 -30 -60 0 0 10 20 30 40 Tone Spacing (MHz) Preliminary Data Sheet -65 42 44 46 48 50 52 Intermodulation Distortion (dBc) 5 Efficiency TCASE = 25°C TCASE = 90°C 16 Gain (dB) 25 60 -2 Drain Efficiency (%) 0 Efficiency Input Return Loss (dB) Gain (dB), Efficiency (%) 30 54 Output Power (dBm), PEP 3 of 10 Rev. 02, 2005-05-16 PTFA212002E Typical Performance (cont.) Single-carrier WCDMA Drive-up Voltage Sweep VDD = 28 V, IDQ = 1600 mA, f = 2140 MHz, 3GPP WCDMA signal, Test Model 1 w/ 16 DPCH 67% clipping, P/A R = 8.7 dB, 3.84 MHz BW IDQ = 1600 mA, f = 2140 MHz, POUT = 200 W PEP, tone spacing = 1 MHz 30 50 -5 -25 45 -10 -30 -35 25 20 -40 Gain 15 -45 10 -50 ACPR 5 -55 35 38 41 44 47 -15 Drain Efficiency 35 -20 30 -25 25 -30 IM3 20 -35 Gain 15 -40 -45 10 -50 5 -60 0 40 22 50 Output Power (dBm), Avg. IM3 (dBc) ACPR Up ACPR Low -20 Efficiency (%), Gain (dB) 35 Drain Efficiency ACPR (dB) Drain Efficiency (%), Gain (dB) 40 24 26 28 30 32 34 Drain Voltage (V) Bias Voltage vs. Temperature Normalized Bias Voltage (V) Voltage normalized to typical gate voltage, series show current 1.03 0.4 A 1.02 1.2 A 2.0 A 1.01 3.0 A 1.00 6.0 A 0.99 9.0 A 12.0 A 0.98 15.0 A 0.97 18.0 A 0.96 0.95 -20 0 20 40 60 80 100 Case Temperature (°C) Preliminary Data Sheet 4 of 10 Rev. 02, 2005-05-16 PTFA212002E Broadband Circuit Impedance Z0 = 50 Ω 0 .1 0.4 0.0 S G G 0.3 Z Load 0.2 D 0.1 Z Source D 2225 MHz 0.1 MHz R jX R jX 2050 12.21 –12.34 4.95 –6.77 2075 11.36 –12.55 4.80 –6.45 10.52 –12.61 4.66 –6.12 2125 9.73 –12.53 4.52 –5.80 2150 9.00 –12.35 4.39 –5.47 2175 8.33 –12.08 4.27 –5.15 2200 7.73 –11.76 4.16 –4.82 2225 7.20 –11.39 4.06 –4.49 2050 MHz Z Source 2050 MHz 2225 MHz 0. 2 0. 3 45 2100 Z Load 05 Z Load Ω 0. Z Source Ω Frequency See next page for circuit information. Preliminary Data Sheet 5 of 10 Rev. 02, 2005-05-16 PTFA212002E Reference Circuit C1 0.001µF R2 1.3K V R1 1.2K V QQ1 LM7805 VDD Q1 B C P56 C2 0.001µF C3 0.001µF R3 2K V R4 2K V R5 10 V C4 10 µF 35V R6 1K V C5 0.1µF l 13 R7 1K V C11 8.2pF VDD C13 10pF R8 10 V C8 20pF l9 l15 RF_IN l1 l2 C6 0.1pF l3 l4 C7 0.4 - 2.5pF l6 l8 l 10 l 12 C9 20pF C19 10µF 50V C23 12pF l11 l19 C10 0.8pF l5 C17 0.02µF l 17 DUT l7 C15 1µF l21 l 23 l 26 C21 0.4 - 2.5pF l16 l20 l 27 R F_OUT l25 l22 l24 C22 12pF R9 10 V l18 l14 VDD C14 10pF C12 8.2pF C16 1µF C18 0.02µF C20 10µF 50V A212002e_sch Reference Circuit Schematic for f = 2140 MHz Circuit Assembly Information DUT PTFA212002E PCB 0.76 mm [.030"] thick, εr = 3.48 Microstrip l1 l2 l3 l4 l5 l6 l7, l8 l9, l10 l11, l12 l13, l14 l15, l16 LDMOS Transistor Rogers 4350 Electrical Characteristics at 2140 MHz 1 Dimensions: L x W (mm) 0.060 λ, 50.0 Ω 5.08 x 1.70 0.225 λ, 50.0 Ω 19.05 x 1.70 0.210 λ, 36.0 Ω 16.99 x 2.84 0.090 λ, 36.0 Ω 7.57 x 2.84 0.550 λ, 50.0 Ω 47.07 x 1.70 0.050 λ, 50.0 Ω 4.39 x 1.70 0.110 λ, 32.0 Ω 9.04 x 3.30 0.070 λ, 22.4 Ω 5.84 x 5.26 0.090 λ, 9.1 Ω 6.86 x 15.09 0.280 λ, 50.0 Ω 23.88 x 1.70 0.129 λ, 8.4 Ω 10.01 x 16.33 1Electrical characteristics are rounded. Preliminary Data Sheet 1 oz. copper Dimensions: L x W (in.) 0.200 x 0.067 0.750 x 0.067 0.669 x 0.112 0.298 x 0.112 1.853 x 0.067 0.173 x 0.067 0.356 x 0.130 0.230 x 0.207 0.270 x 0.594 0.940 x 0.067 0.394 x 0.643 (table cont. next page) 6 of 10 Rev. 02, 2005-05-16 PTFA212002E Reference Circuit (cont.) Circuit Assembly Information (cont.) Microstrip l17, l18 l19, l20 l21, l22 l23 l24 l25 l26 Electrical Characteristics at 2140 MHz* Dimensions: L x W (mm) 0.102 λ, 50.0 Ω 8.64 x 1.70 0.035 λ, 13.1 Ω 2.74 x 9.96 0.102 λ, 20.5 Ω 4.70 x 2.72 0.090 λ, 50.0 Ω 6.43 x 1.70 0.620 λ, 50.0 Ω 52.32 x 1.70 0.264 λ, 36.0 Ω 21.79 x 2.84 0.136 λ, 50.0 Ω 11.51 x 1.70 Dimensions: L x W (in.) 0.340 x 0.067 0.108 x 0.392 0.185 x 0.107 0.253 x 0.067 2.060 x 0.067 0.858 x 0.112 0.453 x 0.067 Component Description Suggested Manufacturer P/N or Comment C1, C2, C3 C4 C5 C6 C7, C21 C8, C9 C10 C11, C12 C13, C14 C15, C16 C17, C18 C19, C20 C22, C23 Q1 QQ1 R1 R2 R3 R4 R5, R8, R9 R6, R7 Capacitor, 0.001 µF Capacitor, 10 µF, 35 V, tant TE series Capacitor, 0.1 µF Ceramic capacitor, 0.1 pF Variable capacitor, 0.4 – 2.5 pF Ceramic capacitor, 20 pF Ceramic capacitor, 0.8 pF Ceramic capacitor, 8.2 pF Ceramic capacitor, 10 pF Ceramic capacitor, 1 µF Ceramic capacitor, 0.02 µF Tantalum capacitor, 10 µF, 50 V Ceramic capacitor, 12 pF Transistor Voltage regulator Chip resistor, 1.2 k-ohms Chip resistor, 1.3 k-ohms Chip resistor, 2 k-ohms Potentiometer, 2 k-ohms Chip resistor, 10 ohms Chip resistor, 1 k-ohms Digi-Key Digi-Key Digi-Key ATC TEMEX USA ATC ATC ATC ATC ATC ATC Digi-Key ATC Infineon National Semiconductor Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key PCC1772CT-ND PCS6106TR-ND, SMD P4525-ND 100B 0R1 AT27280 100A 200 100B 0R8 100B 8R2 100B 100 920C105 200B203 P5182-ND 100B 120 BCP56 LM7805 P1.2KGCT-ND P1.3KGCT-ND P2KECT-ND 3224W-202ETR-ND P10ECT-ND P1KECT-ND Preliminary Data Sheet 7 of 10 Rev. 02, 2005-05-16 PTFA212002E Reference Circuit (cont.) VDD + 10 35V VDD LM VDD A212002e_assy Reference Circuit (not to scale)* *Gerber Files for this circuit available on request Preliminary Data Sheet 8 of 10 Rev. 02, 2005-05-16 PTFA212002E Package Outline Specifications Package 30275 2X 45°±5° X 1.19 [.047] 2X R 1.59 [.063] D 16.61±0.51 [.654±.020] D S +0.10 -0.15 +.004 [.370 ] - .006 9.40 2X 3.18 [.125] G 4X 3.23±0.25 [.127±.010] +0.10 LID 9.14 -0.15 +.004 [.360 ] -.006 10.16 [.400] G 4X 11.68 [.460] 35.56 [1.400] 31.24±0.28 [1.230±.011] 1.63 [.064] 4.55±0.38 [.179±.015] 0.038 [.0015] -A2.18 [.086] SPH 41.15 [1.620] ERA-H-30275-4-1-2304 Diagram Notes: 1. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001]. 2. All tolerances ± 0.127 [.005] unless specified otherwise. 3. Pins: D = drain, S = source, G = gate. 4. Interpret dimensions and tolerances per ASME Y14.5M-1994. 5. Primary dimensions are mm. Alternate dimensions are inches. Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Preliminary Data Sheet 9 of 10 Rev. 02, 2005-05-16 PTFA212002E Confidential, Limited Internal Revision History: 2005-05-16 Previous Version: 2005-01-21, Preliminary Data Sheet Page Subjects (major changes since last revision) 3–8 Preliminary Data Sheet Added performance and circuit information We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: [email protected] To request other information, contact us at: +1 877 465 3667 (1-877-GOLDMOS) USA or +1 408 776 0600 International GOLDMOS® is a registered trademark of Infineon Technologies AG. Edition 2005-05-16 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 München, Germany © Infineon Technologies AG 2005. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Preliminary Data Sheet 10 of 10 Rev. 02, 2005-05-16