PTF191601E PTF191601F Thermally-Enhnaced High Power RF LDMOS FETs 160 W, 1930 – 1990 MHz Description The PTF191601E and PTF191601F are 160-watt, internally-matched GOLDMOS FETs intended for GSM EDGE and CDMA applications in the 1930 to 1990 MHz band. Thermally-enhanced packaging provides the coolest operation available. Full gold metallization ensures excellent device lifetime and reliability. VDD = 28 V, IDQ = 2.0 A, f = 1989.1MHz TCASE = 25°C TCASE = 85°C 40 30 3 Efficiency 2 20 1 10 Drain Efficiency (%) RMS EVM (Average %). PTF191601F* Package 31260 Features Typical EDGE Performance 4 PTF191601E Package 30260 • Thermally-enhanced packaging • Broadband internal matching • Typical EDGE performance - Average output power = 80 W - Gain = 14 dB - Efficiency = 35% - EVM = 2.5% • Typical CW performance - Output power at P–1dB = 180 W - Gain = 13 dB - Efficiency = 47% • Integrated ESD protection: Human Body Model, Class 1 (minimum) • Excellent thermal stability • Low HCI drift • Capable of handling 10:1 VSWR @ 28 V, 160 W (CW) output power EVM 0 0 35 40 45 50 Output Power (dBm) ESD: Electrostatic discharge sensitive device—observe handling precautions! RF Characteristics at TCASE = 25°C unless otherwise indicated EDGE Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ = 2.0 A, P OUT = 80 W, f = 1989.8 MHz Characteristic Symbol Min Typ Max Units EVM (RMS) — 2.5 — % Modulation Spectrum @ 400 kHz ACPR — –60 — dBc Modulation Spectrum @ 600 kHz ACPR — –73 — dBc Gain Gps — 14 — dB Drain Efficiency ηD — 35 — % Error Vector Magnitude *See Infineon distributor for future availability. Data Sheet 1 of 10 2004-09-16 PTF191601E PTF191601F RF Characteristics (cont.) Two-Tone Measurements (tested in Infineon test fixture) VDD = 28 V, IDQ = 2.0 A, POUT = 150 W PEP, f = 1990 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Max Units Gain Gps 12.5 14 — dB Drain Efficiency @ –30 dBc IM3 ηD 33 35 — % Intermodulation Distortion IMD — –30 –28 dBc DC Characteristics at TCASE = 25°C unless otherwise indicated Characteristic Conditions Symbol Min Typ Max Units Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 µA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, V GS = 0 V IDSS — — 1.0 µA On-State Resistance VGS = 10 V, V DS = 0.1 V RDS(on) — 0.065 — Ω Operating Gate Voltage VDS = 28 V, IDQ = 2.0 A VGS 2.5 3.2 4.0 V Gate Leakage Current VGS = 10 V, V DS = 0 V IGSS — — 1.0 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –0.5 to +12 V Junction Temperature TJ 200 °C Total Device Dissipation PD 603 W 3.45 W/°C Above 25°C derate by Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C, 160 W CW) RθJC 0.29 °C/W Ordering Information Type PTF191601E PTF191601F* Package Outline 30260 31260 Package Description Marking Thermally-enhanced slotted flange, single-ended Thermally-enhanced earless flange, single-ended PTF191601E PTF191601F *See Infineon distributor for future availability. Data Sheet 2 of 10 2004-09-16 PTF191601E PTF191601F Typical Performance (data taken in production test fixture) EDGE Modulation Spectrum Performance EVM & Modulation Spectrum Performance VDD = 28 V, IDQ = 2.0 A, f = 1989.1 MHz 50 2 -55 40 400 kHz -65 30 Efficiency 20 600 kHz -75 10 -80 0 36 38 40 42 44 46 48 2 -60 2 -65 600 KHz 1 -70 1 -75 EVM 1 50 1.3 1.5 Output Power (dBm) 1.9 2.1 2.3 Gain & Efficiency vs. Output Power Broadband Performance VDD = 28 V, IDQ = 2.0 A, f = 1990 MHz VDD = 28 V, IDQ = 2.0 A 20 60 16 50 40 Gain 14 30 13 20 12 Drain Efficiency (%) 17 Gain (dB), Return Loss (dB) 70 15 10 Efficiency 11 35 40 45 50 15 60 Gain 10 55 Output Pow er 5 0 50 Efficiency -5 -10 45 Return Loss -15 -20 1900 0 30 -80 2.7 2.5 Quiscent Drain Current (A) 18 Gain (dB) 1.7 55 Output Power (dBm) Output Power (dBm), Efficiency (%) -70 Drain Efficiency (%) -60 EVM RMS (Average %) . 400 KHz Modulation Spectrum (dBc) TCASE = 25°C TCASE = 85°C -55 Modulation Spectrum (dBc) VDD = 28 V, POUT = 63 W, f = 1989.1 MHz 1920 1940 1960 1980 2000 40 2020 Frequency (MHz) All published data at TCASE = 25°C unless otherwise indicated Data Sheet 3 of 10 2004-09-16 PTF191601E PTF191601F Typical Performance (cont.) Gain vs. Output Power Output Power vs. Supply Voltage VDD = 28 V, f = 1990 MHz IDQ = 2.0 A, f = 1990 MHz 53.0 16.0 15.2 IDQ = 2.0 A 14.8 14.4 IDQ = 1.6 A 52.5 52.0 51.5 51.0 50.5 50.0 14.0 30 35 40 45 50 20 55 25 Output Power (dBm) 35 Supply Voltage (V) Intermodulation Distortion vs. Output Power 3-Carrier CDMA 2000 Performance VDD = 28 V, IDQ = 2.0 A, f1 = 1990 MHz, f2 = 1989 MHz VDD = 28 V, IDQ = 2.0 A, f = 1990 MHz 40 -20 3rd Order Drain Efficiency (%) 5th -40 7th -50 -40 Adj 1.98 MHz 35 -30 IMD (dBc) 30 -60 -70 -45 30 -50 25 -55 Alt 1, 3.21 MHz 20 -60 15 -65 10 -70 Alt 2, 5.23 MHz 5 -75 Efficiency 0 -80 40 45 50 41 43 45 47 49 Output Power (dBm) Output Power, PEP (dBm) Data Sheet -80 39 55 Adj. Ch. Power Ratio (dBc) Power Gain (dB) Output Power (dBm) IDQ = 2.4 A 15.6 4 of 10 2004-09-16 PTF191601E PTF191601F Typical Performance (cont.) IS-95 CDMA Performance Gate-Source Voltage vs. Temperature VDD = 28 V, IDQ = 450 mA, f = 880 MHz Voltage normalized to typical gate voltage, series show current. -40 30 -50 -55 Alt 1 1.98MHz 20 -60 15 -65 Efficiency -70 5 -75 0 39 41 43 45 47 7.80 A 49 11.40 A 1.00 14.85 A 0.99 18.00 A 0.98 0.97 0.96 0 Output Power (dBm), Avg. S T OW A D - W AV E LE NGTH Z Load G S Z Source Ω Frequency 40 60 80 100 RD G E NE RA Broadband Circuit Impedance Z Source 20 Case Temperature (ºC) Z Load Ω R jX R jX 1900 1.6 –2.2 1.5 1.9 1920 1.4 –1.9 1.6 2.0 1930 1.5 –1.8 1.6 2.1 1960 1.5 –1.7 1.6 2.2 1990 1.1 –1.5 1.5 2.3 2000 1.0 –1.4 1.4 2.4 2020 1.0 –1.0 1.4 2.5 Z Load 2020 MHz Z Source 1900 MHz 2020 MHz 1900 MHz 0. 1 A MHz Z0 = 50 Ω 0.1 37 1.01 0.95 -20 -80 35 4.50 A 0.0 10 1.20 A 1.02 DT OW ARD LOA GT HS N E L VE 25 Normalized Bias Voltage Drain Efficiency (%) -45 Adj 750 kHz 1.03 0. 1 35 Adj. Ch. Power Ratio (dBc) 40 Data Sheet 5 of 10 2004-09-16 PTF191601E PTF191601F Reference Circuit C14 0.001µF R5 1.3KV R4 1.0KV Q1 BCP56 QQ1 LM7805 VDD C15 0.001µF C16 0.001µF R8 24KV R6 2KV R7 5.1KV R1 10V C1 0.1µF C2 10µF R2 5.1KV C3 4.7pF C7 10pF R3 10V l9 l7 C5 10pF RF_IN l1 l2 C4 0.9pF l3 l4 l5 C9 0.7pF DUT l6 VDD C8 100µF l8 l11 C6 1.5pF l12 l13 C11 10pF l14 l15 RF_OUT C10 0.7pF l10 C12 10pF C13 100µF 191601ef_sch Reference Circit Schematic for f = 1960 MHz Circuit Assembly Information DUT PTF191601E or PTF191601F PCB 0.76 mm [.030”] thick, εr = 4.5 Microstrip l1 l2 l3 l4 l5 l6 l7 l8 l9, l10 l11 l12 (taper) l13 (taper) l14 l15 LDMOS Transistor Rogers TMM4 Electrical Characteristics at 1960 MHz* Dimensions: L x W (mm) 0.017 λ, 50.0 Ω 0.017 λ, 50.0 Ω 0.152 λ, 43.0 Ω 0.137 λ, 43.0 Ω 0.016 λ, 11.8 Ω 0.069 λ, 7.2 Ω 0.059 λ, 58.0 Ω 0.017 λ, 7.2 Ω 0.357 λ, 57.0 Ω 0.030 λ, 4.1 Ω 0.085 λ, 4.5 Ω / 5.5 Ω 0.105 λ, 5.5 Ω / 43.0 Ω 0.112 λ, 43.0 Ω 0.048 λ, 50.0 Ω 1.40 x 1.30 1.40 x 1.30 12.47 x 1.85 1.12 x 1.85 1.24 x 10.16 5.13 x 17.75 4.98 x 1.07 1.40 x 17.75 30.05 x 1.12 2.41 x 29.74 8.13 x 29.46 / 17.65 7.37 x 17.65 / 1.85 9.14 x 1.85 3.96 x 1.30 2 oz. copper Dimensions: L x W (in.) 0.055 x 0.051 0.055 x 0.051 0.491 x 0.073 0.044 x 0.073 0.049 x 0.400 0.202 x 0.699 0.196 x 0.042 0.055 x 0.699 1.183 x 0.044 0.095 x 1.171 0.320 x 1.160 / 0.695 0.290 x 0.695 / 0.073 0.360 x 0.073 0.156 x 0.051 *Electrical characteristics are rounded. Data Sheet 6 of 10 2004-09-16 PTF191601E PTF191601F Reference Circuit (cont.) R7 C1 R6 R8 C14 R7 C1 R6 + C2 VDD R8 C14 C15 C16 Q1 Q1 10 35V C7 R5 VDD QQ1 C8 LM R1 C3 R2 C2 C9 R4 10 35V R5 C15 C16 QQ1 LM R1 C3 R2 R3 RF_IN + Q1 Q1 R4 RF_OUT C5 C11 C4 R3 191601ef_dtl C10 C6 VDD C13 C12 191601in_01 191601out_01 191601ef_assy Reference circuit assembly (not to scale)1 Component Description Manufacturer P/N or Comment C1 C2 C3 C4 C5, C7, C11, C12 C6 C8, C13 C9, C10 C14, C15, C16 Q1 QQ1 R1, R3 R2, R7 R4 R5 R6 R8 Capacitor, 0.1 µF, 50V, 1206 Capacitor, 10 µF, 35V, Tant TE Series Capacitor, 4.7 pF Capacitor, 0.9 pF Capacitor, 10 pF Capacitor, 1.5 pF Capacitor, 1 µF, 100 V Capacitor, 0.7 pF Capacitor, 0.001 µF, 50 V, 0603 Transistor Voltage Regulator Resistor, 1 0 ohms, 1/4W, 1206 Resistor, 5.1 k-ohms, 1/4W, 1206 Resistor, 1 .0 k-ohms, 1/10W, 0603 Resistor, 1 .3 k-ohms, 1/10W, 0603 Potentiometer, 2 k-ohms, 1/4W, 0603 Resistor, 24K ohms, 1/4W, 1206 Digi-Key Digi-Key ATC ATC ATC ATC ATC ATC Digi-Key Infineon National Semiconductor Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key P4525-ND PCS6106TR-ND, SMD 100B 4R7 100A 0R9 100B 100 100B 1R5 920C105KW 100B 0R7 PCC1772CT-ND BCP56 LM7805 P10ACT-ND P5.1KACT-ND P1.0KGCT-ND P1.3KGCT-ND 3224W-202ETR-ND P24KECT-ND 1Gerber files for this circuit are available on request. Data Sheet 7 of 10 2004-09-16 PTF191601E PTF191601F Package Outline Specifications Package 30260 45° X (2.03 [.080]) 2X 12.70 [.500] 4X R 1.52 [.060] D (2X 4.83±0.50 [.190±.020]) S +0.10 LID 13.21 –0.15 +.004 [.520 –.006 ] 2X 3.25 [.128] 13.72 [.540] 23.37±0.51 [.920±.020] 2X 1.63 [.064] R G SPH 1.57 [.062] 22.35±0.23 [.880±.009] 4.11±0.38 [.162±.015] 0.038 [.0015] -A27.94 [1.100] 34.04 [1.340] 1.02 [.040] 260-cases_30260 Diagram Notes: 1. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001]. 2. All tolerances ± 0.127 [.005] unless specified otherwise. 3. Pins: D = drain, S = source, G = gate. 4. Interpret dimensions and tolerances per ASME Y14.5M-1994. 5. Primary dimensions are mm. Alternate dimensions are inches. Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/products Data Sheet 8 of 10 2004-09-16 PTF191601E PTF191601F Package Outline Specifications (cont.) Package 31260 4 5 ° X 2.031 [.080] 2X 12.70 [.500] D 13.72 [.540] 2x 4.83±0.50 [.190±.020] LID 13.21 +0.10 –0.15 [.520 +.004 –.006 ] 23.37±0.51 [.920±.020] . G 22.35±0.23 [.880±.009] 4.11±0.38 [.162±.015] 0 .038 [.0015] -A1 .02 [.040] SPH 1.57 [.062] 23.11 [.910] S 260-cases_31260 Diagram Notes: 1. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001]. 2. All tolerances ± 0.127 [.005] unless specified otherwise. 3. Pins: D = drain, S = source, G = gate. 4. Interpret dimensions and tolerances per ASME Y14.5M-1994. 5. Primary dimensions are mm. Alternate dimensions are inches. Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/products Data Sheet 9 of 10 2004-09-16 PTF191601E/F Confidential—Limited Internal Distribution Revision History: 2004-09-16 2004-07-20 Previous Version: Page Data Sheet Preliminary Data Sheet Subjects (major changes since last revision) Add PTF191601F, update data, remove Preliminary status. We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: [email protected] To request other information, contact us at: +1 877 465 3667 (1-877-GOLDMOS) USA or +1 408 776 0600 International GOLDMOS® is a registered trademark of Infineon Technologies AG. Edition 04-09-16 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 München, Germany © Infineon Technologies AG 2004. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 10 of 10