INFINEON IPU039N03LG

IPF039N03L G
Type
IPU039N03L G
OptiMOS®3 Power-Transistor
Product Summary
Features
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
V DS
30
V
R DS(on),max
3.9
mΩ
ID
50
A
1)
• Qualified according to JEDEC for target applications
• N-channel, logic level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• Avalanche rated
• Pb-free plating; RoHS compliant
Type
IPF039N03L G
IPU039N03L G
Package
PG-TO252-3-23
PG-TO251-3-21
Marking
039N03L
039N03L
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Value
V GS=10 V, T C=25 °C
50
V GS=10 V, T C=100 °C
50
V GS=4.5 V, T C=25 °C
50
V GS=4.5 V,
T C=100 °C
50
Pulsed drain current2)
I D,pulse
T C=25 °C
350
Avalanche current, single pulse 3)
I AS
T C=25 °C
50
Avalanche energy, single pulse
E AS
I D=50 A, R GS=25 Ω
115
Reverse diode dv /dt
dv /dt
I D=50 A, V DS=24 V,
di /dt =200 A/µs,
T j,max=175 °C
6
Gate source voltage
V GS
1)
±20
Unit
A
mJ
kV/µs
V
J-STD20 and JESD22
Rev. 0.9 target datasheet
page 1
2006-10-23
IPF039N03L G
IPU039N03L G
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Power dissipation
P tot
Operating and storage temperature
T j, T stg
Value
T C=25 °C
IEC climatic category; DIN IEC 68-1
Parameter
Unit
94
W
-55 ... 175
°C
55/175/56
Values
Symbol Conditions
Unit
min.
typ.
max.
-
-
1.6
minimal footprint
-
-
75
6 cm² cooling area 4)
-
-
50
30
-
-
Thermal characteristics
Thermal resistance, junction - case
R thJC
SMD version, device on PCB
R thJA
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
Gate threshold voltage
V GS(th)
V DS=V GS, I D=250 µA
1
-
2.2
Zero gate voltage drain current
I DSS
V DS=30 V, V GS=0 V,
T j=25 °C
-
0.1
1
V DS=30 V, V GS=0 V,
T j=125 °C
-
10
100
I GSS
V GS=20 V, V DS=0 V
-
10
100
nA
R DS(on)
V GS=4.5 V, I D=30 A
-
4.2
5.2
mΩ
V GS=10 V, I D=30 A
-
3.3
3.9
-
1.6
-
Ω
48
96
-
S
Gate-source leakage current
Drain-source on-state resistance
5)
Gate resistance
RG
Transconductance
g fs
2)
See figure 3 for more detailed information
3)
See figure 13 for more detailed information
|V DS|>2|I D|R DS(on)max,
I D=30 A
V
µA
4)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
5)
Measured from drain tab to source pin
Rev. 0.9 target datasheet
page 2
2006-10-23
IPF039N03L G
IPU039N03L G
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
4000
5300
-
1400
1900
Dynamic characteristics
Input capacitance
C iss
V GS=0 V, V DS=15 V,
f =1 MHz
Output capacitance
C oss
Reverse transfer capacitance
Crss
-
81
120
Turn-on delay time
t d(on)
-
9
-
Rise time
tr
-
7
-
Turn-off delay time
t d(off)
-
35
-
Fall time
tf
-
5
-
Gate to source charge
Q gs
-
12
-
Gate charge at threshold
Q g(th)
-
6.3
-
Gate to drain charge
Q gd
-
5.6
-
Switching charge
Q sw
-
11
-
Gate charge total
Qg
-
25
-
Gate plateau voltage
V plateau
-
2.9
-
Gate charge total
Qg
V DD=15 V, I D=30 A,
V GS=0 to 10 V
-
51
-
Gate charge total, sync. FET
Q g(sync)
V DS=0.1 V,
V GS=0 to 4.5 V
-
22
-
Output charge
Q oss
V DD=15 V, V GS=0 V
-
37
-
-
-
50
-
-
350
V DD=15 V, V GS=10 V,
I D=30 A, R G=1.6 Ω
pF
ns
Gate Charge Characteristics 6)
V DD=15 V, I D=30 A,
V GS=0 to 4.5 V
nC
V
nC
Reverse Diode
Diode continuous forward current
IS
Diode pulse current
I S,pulse
Diode forward voltage
V SD
V GS=0 V, I F=30 A,
T j=25 °C
-
0.85
1.1
V
Reverse recovery charge
Q rr
V R=15 V, I F=I S,
di F/dt =400 A/µs
-
-
20
nC
6)
T C=25 °C
A
See figure 16 for gate charge parameter definition
Rev. 0.9 target datasheet
page 3
2006-10-23
IPF039N03L G
IPU039N03L G
1 Power dissipation
2 Drain current
P tot=f(T C)
I D=f(T C); V GS≥10 V
100
60
50
80
40
I D [A]
P tot [W]
60
30
40
20
20
10
0
0
0
50
100
150
200
0
50
100
T C [°C]
150
200
T C [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D=f(V DS); T C=25 °C; D =0
Z thJC=f(t p)
parameter: t p
parameter: D =t p/T
103
10
1 µs
limited by on-state
resistance
10 µs
102
100 µs
1
1 ms
101
0.5
Z thJC [K/W]
I D [A]
DC
10 ms
0.2
0.1
0.05
0.1
10
0
0.02
0.01
single pulse
10-1
10-1
100
101
102
0
0
0
0
0
0
1
10-6
10-5
10-4
10-3
10-2
10-1
100
t p [s]
V DS [V]
Rev. 0.9 target datasheet
0.01
page 4
2006-10-23
IPF039N03L G
IPU039N03L G
5 Typ. output characteristics
6 Typ. drain-source on resistance
I D=f(V DS); T j=25 °C
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
150
12
4.5 V
10 V
3.2 V
10
5V
120
3V
4V
90
R DS(on) [mΩ]
8
I D [A]
3.5 V
60
3.2 V
3.5 V
6
4V
4.5 V
4
5V
10 V
11.5 V
30
3V
2
2.8 V
0
0
0
1
2
3
0
20
40
V DS [V]
60
80
100
80
100
I D [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max
g fs=f(I D); T j=25 °C
parameter: T j
150
160
120
120
I D [A]
g fs [S]
90
80
60
40
30
175 °C
25 °C
0
0
0
1
2
3
4
5
Rev. 0.9 target datasheet
0
20
40
60
I D [A]
V GS [V]
page 5
2006-10-23
IPF039N03L G
IPU039N03L G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=30 A; V GS=10 V
V GS(th)=f(T j); V GS=V DS; I D=250 µA
7
2.5
6
2
98 %
4
V GS(th) [V]
R DS(on) [mΩ]
5
typ
3
1.5
1
2
0.5
1
0
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
T j [°C]
T j [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz
I F=f(V SD)
parameter: T j
104
103
Ciss
25 °C, 98%
103
102
25 °C
175 °C
I F [A]
C [pF]
Coss
102
175 °C, 98%
z
101
Crss
101
100
0
10
20
30
V DS [V]
Rev. 0.9 target datasheet
0
0.5
1
1.5
2
V SD [V]
page 6
2006-10-23
IPF039N03L G
IPU039N03L G
13 Avalanche characteristics
14 Typ. gate charge
I AS=f(t AV); R GS=25 Ω
V GS=f(Q gate); I D=30 A pulsed
parameter: T j(start)
parameter: V DD
100
12
15 V
6V
10
24 V
25 °C
8
100 °C
V GS [V]
I AV [A]
150 °C
10
6
4
2
1
0
10-1
100
101
102
103
0
10
20
30
40
50
60
Q gate [nC]
t AV [µs]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS)=f(T j); I D=1 mA
34
V GS
Qg
32
V BR(DSS) [V]
30
28
26
V g s(th)
24
Q g(th)
22
Q sw
Q gs
20
-60
-20
20
60
100
140
Q g ate
Q gd
180
T j [°C]
Rev. 0.9 target datasheet
page 7
2006-10-23
IPF039N03L G
IPU039N03L G
Package Outline
PG-TO252-3-23
PG-TO251-3-11: Outline
PG-TO251-3-21: Outline
Rev. 0.9 target datasheet
page 8
2006-10-23
IPF039N03L G
IPU039N03L G
Package Outline
PG-TO251-3-21
PG-TO251-3-11: Outline
PG-TO251-3-21: Outline
Rev. 0.9 target datasheet
page 9
2006-10-23
IPF039N03L G
IPU039N03L G
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2006.
All Rights Reserved.
Attention please!
The information given in this data sheet shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device, Infineon Technologies
hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (www.infineon.com ).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types
in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or
system. Life support devices or systems are intended to be implanted in the human body, or to support and/or
maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the
user or other persons may be endangered.
Rev. 0.9 target datasheet
page 10
2006-10-23