PTF210451 LDMOS RF Power Field Effect Transistor 45 W, 2110–2170 MHz Description Features The PTF210451 is a 45 W internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. • Internal matching for wideband performance • Typical two–carrier WCDMA performance - Average output power = 11.5 W - Gain = 14 dB - Efficiency = 27% - IM3 = –37 dBc • Typical CW performance - Output power at P–1dB = 50 W - Linear gain = 14 dB - Efficiency = 53% • Integrated ESD protection: Human Body Model, Class 1 (minimum) • Excellent thermal stability • Low HCI Drift • Capable of handling 10:1 VSWR @ 28 V, 45 W (CW) output power Two–Carrier WCDMA Drive-Up VDD = 28 V, IDQ = 500 mA, f = 2140 MHz, 3GPP WCDMA signal, P/A R = 8 dB, 10 MHz carrier spacing 30 -30 25 -35 20 -40 ACPR IM3 -45 15 10 -50 Drain Efficiency (%) IM3 (dBc), ACPR (dBc) Efficiency 5 -55 30 32 34 36 38 40 42 PTF210451E Package 30265 Average Output Power (dBm) ESD: Electrostatic discharge sensitive device — observe handling precautions! RF Performance at TCASE = 25°C unless otherwise indicated WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ = 500 mA, P OUT = 11.5 W AVG f1 = 2140 MHz, f2 = 2150 MHz, 3GPP signal, channel bandwidth = 3.84 MHz , peak/average = 8 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Units Intermodulation Distortion IMD — –37 — dBc Gain Gps — 14 — dB ηD — 27 — % Symbol Min Typ Max Units Gps 13 14 — dB Drain Efficiency ηD 35 38 — % Intermodulation Distortion IMD — –32 –30 dBc Drain Efficiency Two–Tone Measurements (tested in Infineon test fixture) VDD = 28 V, IDQ = 500 mA, POUT = 45 W PEP, f = 2170 MHz, Tone Spacing = 1 MHz Characteristic Gain Data Sheet 1 2003-12-22 PTF210451 DC Characteristics at TCASE = 25°C unless otherwise indicated Characteristic Conditions Symbol Min Typ Max Units Drain–Source Breakdown Voltage VGS = 0 V, ID = 10 µA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, V GS = 0 V IDSS — — 1.0 µA On–State Resistance VGS = 10 V, V DS = 0.1 V RDS(on) — 0.2 — Ω Operating Gate Voltage VDS = 28 V, IDQ = 500 mA VGS 2.5 3.2 4.0 V Gate Leakage Current VGS = 10 V, V DS = 0 V IGSS — — 1.0 µA Maximum Ratings Parameter Symbol Value Unit Drain–Source Voltage VDSS 65 V Gate–Source Voltage VGS –0.5 to +12 V Junction Temperature TJ 200 °C Total Device Dissipation PD 175 W 1.0 W/°C Above 25°C derate by Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C, 45 W CW) RθJC 1.0 °C/W Typical Performance (data taken in production test fixture) Broadband Performance Power Sweep, CW Conditions VDD = 28 V, IDQ = 500 mA, POUT = 40 dBm VDD = 28 V, IDQ = 500 mA, f = 2170 MHz 30 17 0 60 -5 20 -10 15 10 5 0 2070 -15 Gain -20 -25 Input Retrun Loss 2105 2140 2175 16 15 40 Gain 14 30 13 20 12 -30 2210 10 34 36 38 40 42 44 46 48 Output Power (dBm) Frequency (MHz) Data Sheet 50 Drain Efficiency (%) Efficiency Gain (dB) 25 Input Return Loss (dB) Gain (dB), Efficiency (%) Efficiency 2 2003-12-22 PTF210451 Typical Performance (cont.) Intermodulation Distortion vs. Output Power for selected currents Intermodulation Distortion Products vs. Tone Spacing VDD = 28 V, f = 2140 MHz, tone spacing = 1 MHz VDD = 28 V, IDQ = 500 mA, f = 2140 MHz, POUT = 45 W PEP -30 -25 -35 -30 3rd Order -35 -40 0.60 A IMD (dBc) -45 -50 -40 5th Order -45 -50 -55 0.45 A 0.55 A 0.50 A -55 -60 34 36 38 40 42 44 7th Order 46 -60 48 0 10 Output Power, PEP (dBm) Single–Carrier WCDMA Drive–Up VDD = 28 V, IDQ = 500 mA, f = 2140 MHz, tone spacing = 1MHz Efficiency IMD (dBc) -35 35 -40 30 -45 25 IM3 -50 20 15 IM5 IM7 -60 -35 38 40 42 44 46 25 -45 20 -50 15 ACPR Up 10 ACPR Low 5 36 -40 -55 10 -65 30 Efficiency ACPR (dB) 40 Drain Efficiency (%) -30 -60 48 5 30 Peak Output Power (dBm) Data Sheet 40 VDD = 28 V, IDQ = 500 mA, f = 2140 MHz, 3GPP WCDMA signal, Test Model 1 w/16 DPCH, 67% clipping, P/A R = 8.7 dB, 3.84 MHz BW 45 34 30 Two–Tone Drive–Up -25 -55 20 Tone Spacing (MHz) Drain Efficiency (%) IMD (dBc) 0.40 A 32 34 36 38 40 42 Avgerage Output Power (dBm) 3 2003-12-22 PTF210451 Typical Performance (cont.) IM3, Gain & Drain Efficiency vs. Supply Voltage Bias Voltage vs. Case Temperature IDQ = 500 mA, f = 2140 MHz, POUT = 44.75 dBm (PEP), Tone Spacing = 1 MHz Efficiency -10 40 35 -15 30 -20 IM3 Up 25 -25 20 Gain -30 15 -35 10 -40 5 -45 Normalized Bias Voltage 45 -5 3rd Order IMD (dBc) Series show current. 1.03 50 Gain (dB), Drain Efficiency (%) 0 Voltage normalized to typical gate voltage. 24 25 26 27 28 29 30 31 3.75 A 1.01 32 33 3.00 A 1.00 2.25 A 0.99 1.50 A 0.75 A 0.98 0.97 0.96 -20 0 23 4.50 A 1.02 Supply Voltage (V) 5 30 55 80 105 Case Temperature (ºC) R Broadband Circuit Impedance Data jX R jX 2070 5.72 -9.36 4.94 -0.87 2110 5.17 -8.97 4.90 -0.69 2140 4.88 -8.52 4.96 -0.60 2170 4.59 -8.16 4.96 -0.49 2210 4.08 -7.79 4.88 -0.39 4 Z Source 2210 MHz W R 0.1 <--- Z Load Ω L A VE Z Source Ω MHz Data Sheet 0.3 2210 MHz 2070 MHz S Frequency Z Load 0.2 G 0.1 Z Load 0 .0 Z Source D LOA D S T OW AR E NGTH D 0 .1 - W AV E LE NGT H S T OW A RD G E NE Z0 = 50 Ω 2070 MHz 0. 2 0. 3 2003-12-22 PTF210451 Test Circuit 210451E SCHEMATIC DWG FOR DATA SHEET.dwg Test Circuit Schematic for 2170 MHz Circuit Assembly Information DUT PTF210451E Circuit Board 0.79 mm. [.031”] thick, εr = 4.5 LDMOS Transistor Rogers TMM4, 2 oz. copper Microstrip l1 l2 l3 l4 l5 l6 l7 l8 l9 l10 l11 l12 Dimensions: L x W (mm.) 3.48 x 1.78 2.87 x 4.57 10.08 x 0.89 2.08 x 1.78 26.67 x 10.06 4.98 x 17.68 10.34 x 13.56 19.76 x 0.84 1.98 x 1.83 4.22 x 1.22 2.57 x 5.74 5.64 x 1.80 Data Sheet Electrical Characteristics at 2170 MHz 0.047 λ, 45 Ω 0.040 λ, 23 Ω 0.132 λ, 66 Ω 0.028 λ, 45 Ω 0.018 λ, 12 Ω 0.074 λ, 7 Ω 0.152 λ, 9 Ω 0.257 λ, 68 Ω 0.027 λ, 44 Ω 0.056 λ, 56 Ω 0.036 λ, 19 Ω 0.076 λ, 44 Ω 5 Dimensions: L x W (in.) 0.137 x 0.070 0.113 x 0.180 0.397 x 0.035 0.082 x 0.070 1.050 x 0.396 0.196 x 0.696 0.407 x 0.534 0.778 x 0.033 0.078 x 0.072 0.166 x 0.048 0.101 x 0.226 0.222 x 0.071 2003-12-22 PTF210451 Test Circuit (cont.) 210451E ASSEMBLY DWG FOR DATA SHEET.dwg Reference Circuit1 (not to scale) Component C1 C2, C8 C3, C7 C4, C6 C5, C9 L1 R1, R2 R3 Description Capacitor, 10 µF, 35 V, Tantalum TE, SMD Capacitor, 0.01 µF Capacitor, 1 µF Capacitor, 7.5 pF Capacitor, 10 pF Ferrite Bead Resistor, 3.3K ohm, 1/4 W Resistor, 10 ohm, 1/4 W Manufacturer Digi-Key ATC ATC ATC ATC Elne Magnetic Digi-Key Digi-Key P/N or Comment PCS6106TR-ND X08J103AFB ATC 200B103MW X24L105BVC 100B 7R5 100A 100 #BDS31314.6-452 P3.3K ECT-ND P10 ECT-ND 1 Gerber files for this circuit available on request Data Sheet 6 2003-12-22 PTF210451 Ordering Information Type PTF210451E Package Outline 30265 Package Description Thermally enhanced, flange Marking PTF210451E Package Outline Specifications Package 30265 7.11 [.280] (45° X 2.03 [.080]) CL D S 2X 2.59±0.38 [.107 ±.015] CL FLANGE 9.78 [.385] 15.60±0.51 [.614±.020] LID 10.16±0.25 [.400±.010] G 2X R1.60 [.063] 2x 7.11 [.280] 4x 1.52 [.060] 15.23 [.600] 10.16±0.25 [.400±.010] SPH 1.57 [.062] 0.51 [.020] 3.48±0.38 [.137±.015] 0.0381 [.0015] -A- 20.31 [.800] 1.02 [.040] 30265-2303-mec Notes: Unless otherwise specified 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. Pins: D = drain, S = source, G = gate. 4. Lead thickness: 0.10 +0.051/-0.025 [.004 +.002/-.001] Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/products Data Sheet 7 2003-12-22 PTF210451 Revision History: Previous Version: Page 2003-12-22 none Data Sheet Subjects (major changes since last revision) We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: [email protected] To request other information, contact us at: +1 877 465 3667 (1-877-GOLDMOS) USA or +1 408 776 0600 International Edition 2003-12-22 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 München, Germany © Infineon Technologies AG 2003. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 8 2003-12-22