INFINEON PTF210451

PTF210451
LDMOS RF Power Field Effect Transistor
45 W, 2110–2170 MHz
Description
Features
The PTF210451 is a 45 W internally matched GOLDMOS FET
intended for WCDMA applications from 2110 to 2170 MHz. Full gold
metallization ensures excellent device lifetime and reliability.
•
Internal matching for wideband performance
•
Typical two–carrier WCDMA performance
- Average output power = 11.5 W
- Gain = 14 dB
- Efficiency = 27%
- IM3 = –37 dBc
•
Typical CW performance
- Output power at P–1dB = 50 W
- Linear gain = 14 dB
- Efficiency = 53%
•
Integrated ESD protection: Human Body Model,
Class 1 (minimum)
•
Excellent thermal stability
•
Low HCI Drift
•
Capable of handling 10:1 VSWR @ 28 V,
45 W (CW) output power
Two–Carrier WCDMA Drive-Up
VDD = 28 V, IDQ = 500 mA, f = 2140 MHz, 3GPP WCDMA
signal, P/A R = 8 dB, 10 MHz carrier spacing
30
-30
25
-35
20
-40
ACPR
IM3
-45
15
10
-50
Drain Efficiency (%)
IM3 (dBc), ACPR (dBc)
Efficiency
5
-55
30
32
34
36
38
40
42
PTF210451E
Package 30265
Average Output Power (dBm)
ESD: Electrostatic discharge sensitive device — observe handling precautions!
RF Performance
at TCASE = 25°C unless otherwise indicated
WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ = 500 mA, P OUT = 11.5 W AVG
f1 = 2140 MHz, f2 = 2150 MHz, 3GPP signal, channel bandwidth = 3.84 MHz , peak/average = 8 dB @ 0.01% CCDF
Characteristic
Symbol
Min
Typ
Max
Units
Intermodulation Distortion
IMD
—
–37
—
dBc
Gain
Gps
—
14
—
dB
ηD
—
27
—
%
Symbol
Min
Typ
Max
Units
Gps
13
14
—
dB
Drain Efficiency
ηD
35
38
—
%
Intermodulation Distortion
IMD
—
–32
–30
dBc
Drain Efficiency
Two–Tone Measurements (tested in Infineon test fixture)
VDD = 28 V, IDQ = 500 mA, POUT = 45 W PEP, f = 2170 MHz, Tone Spacing = 1 MHz
Characteristic
Gain
Data Sheet
1
2003-12-22
PTF210451
DC Characteristics at TCASE = 25°C unless otherwise indicated
Characteristic
Conditions
Symbol
Min
Typ
Max
Units
Drain–Source Breakdown Voltage
VGS = 0 V, ID = 10 µA
V(BR)DSS
65
—
—
V
Drain Leakage Current
VDS = 28 V, V GS = 0 V
IDSS
—
—
1.0
µA
On–State Resistance
VGS = 10 V, V DS = 0.1 V
RDS(on)
—
0.2
—
Ω
Operating Gate Voltage
VDS = 28 V, IDQ = 500 mA
VGS
2.5
3.2
4.0
V
Gate Leakage Current
VGS = 10 V, V DS = 0 V
IGSS
—
—
1.0
µA
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain–Source Voltage
VDSS
65
V
Gate–Source Voltage
VGS
–0.5 to +12
V
Junction Temperature
TJ
200
°C
Total Device Dissipation
PD
175
W
1.0
W/°C
Above 25°C derate by
Storage Temperature Range
TSTG
–40 to +150
°C
Thermal Resistance (TCASE = 70°C, 45 W CW)
RθJC
1.0
°C/W
Typical Performance (data taken in production test fixture)
Broadband Performance
Power Sweep, CW Conditions
VDD = 28 V, IDQ = 500 mA, POUT = 40 dBm
VDD = 28 V, IDQ = 500 mA, f = 2170 MHz
30
17
0
60
-5
20
-10
15
10
5
0
2070
-15
Gain
-20
-25
Input Retrun Loss
2105
2140
2175
16
15
40
Gain
14
30
13
20
12
-30
2210
10
34
36
38
40
42
44
46
48
Output Power (dBm)
Frequency (MHz)
Data Sheet
50
Drain Efficiency (%)
Efficiency
Gain (dB)
25
Input Return Loss (dB)
Gain (dB), Efficiency (%)
Efficiency
2
2003-12-22
PTF210451
Typical Performance (cont.)
Intermodulation Distortion vs. Output Power
for selected currents
Intermodulation Distortion Products
vs. Tone Spacing
VDD = 28 V, f = 2140 MHz, tone spacing = 1 MHz
VDD = 28 V, IDQ = 500 mA, f = 2140 MHz,
POUT = 45 W PEP
-30
-25
-35
-30
3rd Order
-35
-40
0.60 A
IMD (dBc)
-45
-50
-40
5th Order
-45
-50
-55
0.45 A
0.55 A
0.50 A
-55
-60
34
36
38
40
42
44
7th Order
46
-60
48
0
10
Output Power, PEP (dBm)
Single–Carrier WCDMA Drive–Up
VDD = 28 V, IDQ = 500 mA, f = 2140 MHz,
tone spacing = 1MHz
Efficiency
IMD (dBc)
-35
35
-40
30
-45
25
IM3
-50
20
15
IM5
IM7
-60
-35
38
40
42
44
46
25
-45
20
-50
15
ACPR Up
10
ACPR Low
5
36
-40
-55
10
-65
30
Efficiency
ACPR (dB)
40
Drain Efficiency (%)
-30
-60
48
5
30
Peak Output Power (dBm)
Data Sheet
40
VDD = 28 V, IDQ = 500 mA, f = 2140 MHz, 3GPP WCDMA
signal, Test Model 1 w/16 DPCH, 67% clipping,
P/A R = 8.7 dB, 3.84 MHz BW
45
34
30
Two–Tone Drive–Up
-25
-55
20
Tone Spacing (MHz)
Drain Efficiency (%)
IMD (dBc)
0.40 A
32
34
36
38
40
42
Avgerage Output Power (dBm)
3
2003-12-22
PTF210451
Typical Performance (cont.)
IM3, Gain & Drain Efficiency vs. Supply Voltage
Bias Voltage vs. Case Temperature
IDQ = 500 mA, f = 2140 MHz, POUT = 44.75 dBm (PEP),
Tone Spacing = 1 MHz
Efficiency
-10
40
35
-15
30
-20
IM3 Up
25
-25
20
Gain
-30
15
-35
10
-40
5
-45
Normalized Bias Voltage
45
-5
3rd Order IMD (dBc)
Series show current.
1.03
50
Gain (dB), Drain Efficiency (%)
0
Voltage normalized to typical gate voltage.
24 25
26 27
28 29
30 31
3.75 A
1.01
32 33
3.00 A
1.00
2.25 A
0.99
1.50 A
0.75 A
0.98
0.97
0.96
-20
0
23
4.50 A
1.02
Supply Voltage (V)
5
30
55
80
105
Case Temperature (ºC)
R
Broadband Circuit Impedance Data
jX
R
jX
2070
5.72
-9.36
4.94
-0.87
2110
5.17
-8.97
4.90
-0.69
2140
4.88
-8.52
4.96
-0.60
2170
4.59
-8.16
4.96
-0.49
2210
4.08
-7.79
4.88
-0.39
4
Z Source
2210 MHz
W
R
0.1
<---
Z Load Ω
L
A VE
Z Source Ω
MHz
Data Sheet
0.3
2210 MHz
2070 MHz
S
Frequency
Z Load
0.2
G
0.1
Z Load
0 .0
Z Source
D LOA D S T OW AR
E NGTH
D
0 .1
- W AV E LE NGT H
S T OW
A
RD G
E NE
Z0 = 50 Ω
2070 MHz
0. 2
0. 3
2003-12-22
PTF210451
Test Circuit
210451E SCHEMATIC DWG FOR DATA SHEET.dwg
Test Circuit Schematic for 2170 MHz
Circuit Assembly Information
DUT
PTF210451E
Circuit Board
0.79 mm. [.031”] thick, εr = 4.5
LDMOS Transistor
Rogers TMM4, 2 oz. copper
Microstrip
l1
l2
l3
l4
l5
l6
l7
l8
l9
l10
l11
l12
Dimensions: L x W (mm.)
3.48 x 1.78
2.87 x 4.57
10.08 x 0.89
2.08 x 1.78
26.67 x 10.06
4.98 x 17.68
10.34 x 13.56
19.76 x 0.84
1.98 x 1.83
4.22 x 1.22
2.57 x 5.74
5.64 x 1.80
Data Sheet
Electrical Characteristics at 2170 MHz
0.047 λ, 45 Ω
0.040 λ, 23 Ω
0.132 λ, 66 Ω
0.028 λ, 45 Ω
0.018 λ, 12 Ω
0.074 λ, 7 Ω
0.152 λ, 9 Ω
0.257 λ, 68 Ω
0.027 λ, 44 Ω
0.056 λ, 56 Ω
0.036 λ, 19 Ω
0.076 λ, 44 Ω
5
Dimensions: L x W (in.)
0.137 x 0.070
0.113 x 0.180
0.397 x 0.035
0.082 x 0.070
1.050 x 0.396
0.196 x 0.696
0.407 x 0.534
0.778 x 0.033
0.078 x 0.072
0.166 x 0.048
0.101 x 0.226
0.222 x 0.071
2003-12-22
PTF210451
Test Circuit (cont.)
210451E ASSEMBLY DWG FOR DATA SHEET.dwg
Reference Circuit1 (not to scale)
Component
C1
C2, C8
C3, C7
C4, C6
C5, C9
L1
R1, R2
R3
Description
Capacitor, 10 µF, 35 V, Tantalum TE, SMD
Capacitor, 0.01 µF
Capacitor, 1 µF
Capacitor, 7.5 pF
Capacitor, 10 pF
Ferrite Bead
Resistor, 3.3K ohm, 1/4 W
Resistor, 10 ohm, 1/4 W
Manufacturer
Digi-Key
ATC
ATC
ATC
ATC
Elne Magnetic
Digi-Key
Digi-Key
P/N or Comment
PCS6106TR-ND
X08J103AFB ATC 200B103MW
X24L105BVC
100B 7R5
100A 100
#BDS31314.6-452
P3.3K ECT-ND
P10 ECT-ND
1 Gerber files for this circuit available on request
Data Sheet
6
2003-12-22
PTF210451
Ordering Information
Type
PTF210451E
Package Outline
30265
Package Description
Thermally enhanced, flange
Marking
PTF210451E
Package Outline Specifications
Package 30265
7.11
[.280]
(45° X 2.03
[.080])
CL
D
S
2X 2.59±0.38
[.107 ±.015]
CL
FLANGE 9.78
[.385]
15.60±0.51
[.614±.020]
LID 10.16±0.25
[.400±.010]
G
2X R1.60
[.063]
2x 7.11
[.280]
4x 1.52
[.060]
15.23
[.600]
10.16±0.25
[.400±.010]
SPH 1.57
[.062]
0.51
[.020]
3.48±0.38
[.137±.015]
0.0381 [.0015] -A-
20.31
[.800]
1.02
[.040]
30265-2303-mec
Notes: Unless otherwise specified
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. Pins: D = drain, S = source, G = gate.
4. Lead thickness: 0.10 +0.051/-0.025 [.004 +.002/-.001]
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/products
Data Sheet
7
2003-12-22
PTF210451
Revision History:
Previous Version:
Page
2003-12-22
none
Data Sheet
Subjects (major changes since last revision)
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Edition 2003-12-22
Published by Infineon Technologies AG,
St.-Martin-Strasse 53,
81669 München, Germany
© Infineon Technologies AG 2003.
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as a guarantee of
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits,
descriptions and charts stated herein.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon
Technologies Office (www.infineon.com/rfpower).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of
Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support
device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it
is reasonable to assume that the health of the user or other persons may be endangered.
Data Sheet
8
2003-12-22