BGA 312 Silicon Bipolar MMIC-Amplifier Preliminary data 3 • Cascadable 50 Ω-gain block • 11 dB typical gain at 1.0 GHz 4 • 9 dBm typical P -1dB at 1.0 GHz • 3 dB-bandwidth: DC to 2.0 GHz 2 1 RF OUT/Bias 1 RF IN VPS05178 3 Circuit Diagram 2, 4 GND EHA07312 Type Marking Ordering Code BGA 312 BMs Q62702-G0042 Pin Configuration Package 1 RFout/bias 2 GND 3 RFinput 4 GND SOT-143 Maximum Ratings Parameter Symbol Device current Value Unit ID 60 mA Total power dissipation, T S ≤ 99 °C Ptot 250 mW RF input power PRFin 10 dBm Junction temperature Tj 150 °C Ambient temperature TA -65 ...+150 Storage temperature T stg -65 ...+150 RthJS ≤ 205 Thermal Resistance Junction - soldering point 1) K/W 1) TS is measured on the collector lead at the soldering point to the pcb Semiconductor Group Semiconductor Group 11 Sep-04-1998 1998-11-01 BGA 312 Electrical Characteristics at TA = 25 °C, unless otherwise specified. Symbol Values Parameter min. typ. Unit max. AC characteristics (VD = 4.7 V, Zo = 50 Ω) |S21| 2 Insertion power gain dB f = 0.1 GHz - 12 - f = 1 GHz - 11 - f = 1.8 GHz - 10 - - +-0.6 - f = 0.1 GHz - 5.5 - f = 1 GHz - 6 - f = 2 GHz - 7 - P-1dB - 9 - dBm RL in - 20 - dB RL out - 14 - ∆ |S 21|2 Insertion point gain flatness f = 0.1 GHz to 0.6 GHz Noise figure NF 1dB compression point f = 1 GHz Return loss input f = 0.1 GHz to 2 GHz Return loss output f = 0.1 GHz to 3 GHz Typical biasing configuration min. VCC = 7 V R Bias ΙD RFC (optional) C Block IN 4 3 C Block 1 RBias = VCC - VD / ID OUT VD VD = 4.7V 2 EHA07313 Semiconductor Group Semiconductor Group 22 Sep-04-1998 1998-11-01 BGA 312 S-Parameters at T A = 25 °C f S11 GHz MAG S21 ANG VD = 4.7 V, Z o = 50 Ω 0.01 0.009 17.9 0.1 0.012 43.5 0.3 0.027 55.8 0.5 0.039 52.5 0.8 0.049 33.7 1 0.046 22.2 1.8 0.054 -135.4 2.4 0.147 179.9 3 0.24 152.1 S12 S22 MAG ANG MAG ANG MAG ANG 3.94 3.95 3.93 3.89 3.79 3.69 3.13 2.63 2.19 179.2 174.4 163.4 152.2 135.8 124.9 84.1 57.6 35.7 0.131 0.131 0.133 0.136 0.142 0.149 0.181 0.205 0.225 0.2 1.7 4.8 7.8 11.7 13.8 16.6 14.7 11.6 0.208 0.207 0.204 0.201 0.194 0.191 0.183 0.182 0.184 -0.5 -6.2 -19.1 -31.9 -51.3 -64.2 -106.8 -124.9 -134.9 Insertion power gain |S21|2 = f ( f ) Noise figure NF = f ( f ) VD = 4.7 V, ID = 42 mA VD = 4.7 V, ID = 42 mA 25 10 dB NF |S21|2 dB 15 6 10 4 5 2 0 -1 10 10 0 GHz 10 0 -1 10 1 f Semiconductor Group Semiconductor Group 10 0 GHz 10 1 f 33 Sep-04-1998 1998-11-01 BGA 312 Output power 1-dB-gain compression P-1dB = f ( f ) VD = 4.7 V, I D = 42 mA 25 P -1dB dBm 15 10 5 0 -1 10 10 0 GHz 10 1 f Semiconductor Group Semiconductor Group 44 Sep-04-1998 1998-11-01