INFINEON BGA312

BGA 312
Silicon Bipolar MMIC-Amplifier
Preliminary data
3
• Cascadable 50 Ω-gain block
• 11 dB typical gain at 1.0 GHz
4
• 9 dBm typical P -1dB at 1.0 GHz
• 3 dB-bandwidth: DC to 2.0 GHz
2
1
RF OUT/Bias
1
RF IN
VPS05178
3
Circuit Diagram
2, 4
GND
EHA07312
Type
Marking Ordering Code
BGA 312 BMs
Q62702-G0042
Pin Configuration
Package
1 RFout/bias 2 GND 3 RFinput
4 GND SOT-143
Maximum Ratings
Parameter
Symbol
Device current
Value
Unit
ID
60
mA
Total power dissipation, T S ≤ 99 °C
Ptot
250
mW
RF input power
PRFin
10
dBm
Junction temperature
Tj
150
°C
Ambient temperature
TA
-65 ...+150
Storage temperature
T stg
-65 ...+150
RthJS
≤ 205
Thermal Resistance
Junction - soldering point
1)
K/W
1) TS is measured on the collector lead at the soldering point to the pcb
Semiconductor Group
Semiconductor Group
11
Sep-04-1998
1998-11-01
BGA 312
Electrical Characteristics at TA = 25 °C, unless otherwise specified.
Symbol
Values
Parameter
min.
typ.
Unit
max.
AC characteristics (VD = 4.7 V, Zo = 50 Ω)
|S21| 2
Insertion power gain
dB
f = 0.1 GHz
-
12
-
f = 1 GHz
-
11
-
f = 1.8 GHz
-
10
-
-
+-0.6
-
f = 0.1 GHz
-
5.5
-
f = 1 GHz
-
6
-
f = 2 GHz
-
7
-
P-1dB
-
9
-
dBm
RL in
-
20
-
dB
RL out
-
14
-
∆ |S 21|2
Insertion point gain flatness
f = 0.1 GHz to 0.6 GHz
Noise figure
NF
1dB compression point
f = 1 GHz
Return loss input
f = 0.1 GHz to 2 GHz
Return loss output
f = 0.1 GHz to 3 GHz
Typical biasing configuration
min. VCC = 7 V
R Bias
ΙD
RFC (optional)
C Block
IN
4
3
C Block
1
RBias = VCC - VD / ID
OUT
VD
VD = 4.7V
2
EHA07313
Semiconductor Group
Semiconductor Group
22
Sep-04-1998
1998-11-01
BGA 312
S-Parameters at T A = 25 °C
f
S11
GHz
MAG
S21
ANG
VD = 4.7 V, Z o = 50 Ω
0.01
0.009
17.9
0.1
0.012
43.5
0.3
0.027
55.8
0.5
0.039
52.5
0.8
0.049
33.7
1
0.046
22.2
1.8
0.054
-135.4
2.4
0.147
179.9
3
0.24
152.1
S12
S22
MAG
ANG
MAG
ANG
MAG
ANG
3.94
3.95
3.93
3.89
3.79
3.69
3.13
2.63
2.19
179.2
174.4
163.4
152.2
135.8
124.9
84.1
57.6
35.7
0.131
0.131
0.133
0.136
0.142
0.149
0.181
0.205
0.225
0.2
1.7
4.8
7.8
11.7
13.8
16.6
14.7
11.6
0.208
0.207
0.204
0.201
0.194
0.191
0.183
0.182
0.184
-0.5
-6.2
-19.1
-31.9
-51.3
-64.2
-106.8
-124.9
-134.9
Insertion power gain |S21|2 = f ( f )
Noise figure NF = f ( f )
VD = 4.7 V, ID = 42 mA
VD = 4.7 V, ID = 42 mA
25
10
dB
NF
|S21|2
dB
15
6
10
4
5
2
0 -1
10
10
0
GHz
10
0 -1
10
1
f
Semiconductor Group
Semiconductor Group
10
0
GHz
10
1
f
33
Sep-04-1998
1998-11-01
BGA 312
Output power 1-dB-gain compression
P-1dB = f ( f )
VD = 4.7 V, I D = 42 mA
25
P -1dB
dBm
15
10
5
0 -1
10
10
0
GHz
10
1
f
Semiconductor Group
Semiconductor Group
44
Sep-04-1998
1998-11-01