BFP 93A NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFP 93A SOT-143 FEs Q62702-F1144 1=C 2=E 3=B 4=E Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 12 Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 2 Collector current IC 50 Base current IB 6 Total power dissipation Ptot TS ≤ 78 °C Values Unit V mA mW 300 Junction temperature Tj Ambient temperature TA - 65 ... + 150 Storage temperature Tstg - 65 ... + 150 150 °C Thermal Resistance Junction - soldering point 1) RthJS ≤ 240 K/W 1) TS is measured on the collector lead at the soldering point to the pcb. Semiconductor Group 1 Dec-16-1996 BFP 93A Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 1 mA, IB = 0 Collector-emitter cutoff current 12 100 nA - - 100 IEBO µA - - 10 hFE IC = 30 mA, VCE = 8 V Semiconductor Group - ICBO VEB = 2 V, IC = 0 DC current gain µA - VCB = 10 V, IE = 0 Emitter-base cutoff current - ICES VCE = 20 V, VBE = 0 Collector-base cutoff current V 50 2 100 200 Dec-16-1996 BFP 93A Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. AC Characteristics Transition frequency fT IC = 30 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance 4.5 pF - 0.5 0.8 - 0.33 - - 1.7 - Cce VCE = 10 V, f = 1 MHz Emitter-base capacitance 6 Ccb VCB = 10 V, f = 1 MHz Collector-emitter capacitance GHz Ceb VEB = 0.5 V, f = 1 MHz F Noise figure dB IC = 5 mA, VCE = 8 V, ZS = ZSopt f = 900 MHz - 2 - f = 1.8 GHz - 3.3 - f = 900 MHz - 18 - f = 1.8 GHz - 12 - f = 900 MHz - 14.5 - f = 1.8 GHz - 8.5 - Power gain 2) Gma IC = 30 mA, VCE = 8 V, ZS = ZSopt ZL = ZLopt Transducer gain |S21e|2 IC = 30 mA, VCE = 8 V, ZS =ZL= 50 Ω 2) Gma = |S21/S12| (k-(k2-1)1/2) Semiconductor Group 3 Dec-16-1996 BFP 93A SPICE Parameters (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = 8.6752 fA BF = 137.63 - NF = 0.93633 - VAF = 20.011 V IKF = 0.33395 A ISE = 2619.3 fA NE = 1.5466 - BR = 59 - NR = 0.88761 - VAR = 26.834 V IKR = 0.015129 A ISC = 0.70823 fA NC = 1.95 - RB = 7.2326 Ω IRB = 0.043806 mA RBM = 3.4649 Ω RE = 1.0075 Ω RC = 0.13193 Ω CJE = 3.1538 fF VJE = 0.70393 V MJE = 0.5071 - TF = 33.388 ps XTF = 0.28319 - VTF = 0.17765 V ITF = 2.5184 mA PTF = 0 deg CJC = 1039.5 fF VJC = 0.72744 V MJC = 0.34565 - XCJC = 0.21422 - TR = 1.1061 ns CJS = 0 fF VJS = 0.75 V MJS = 0 - XTB = 0 - EG = 1.11 eV XTI = 3 - FC = 0.75935 - TNOM 300 K LBI = 0.89 nH LBO = 0.73 nH LEI = 0.4 nH LEO = 0.5 nH LCI = 0 nH LCO = 0.42 nH CBE = 189 fF CCB = 15 fF CCE = 187 fF All parameters are ready to use, no scalling is necessary. Extracted on behalf of SIEMENS Small Signal Semiconductors by: Institut für Mobil-und Satellitenfunktechnik (IMST) © 1996 SIEMENS AG Package Equivalent Circuit: Valid up to 6 GHz For examples and ready to use parameters please contact your local Siemens distributor or sales office to obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm Semiconductor Group 4 Dec-16-1996 BFP 93A Total power dissipation Ptot = f (TA*, TS) * Package mounted on epoxy 400 mW Ptot 300 250 TS 200 150 TA 100 50 0 0 20 40 60 80 100 120 °C 150 TA ,TS Permissible Pulse Load RthJS = f (tp) Permissible Pulse Load Ptotmax/PtotDC = f (tp) 10 2 10 3 K/W RthJS Ptotmax/P totDC D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 10 0 -7 10 10 -6 10 -5 10 Semiconductor Group -4 10 -3 10 -2 -1 10 s 10 TS 0 5 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 -1 10 s 10 tp 0 Dec-16-1996 BFP 93A Collector-base capacitance Ccb = f (VCB) VBE = vbe = 0, f = 1MHz Transition frequency fT = f (IC) VCE = Parameter 7 1.6 pF GHz Ccb 10V fT 3V 1.2 2V 5 1.0 4 0.8 1V 3 0.6 0.7V 2 0.4 1 0.2 0.0 0 0 4 8 12 16 V VR 22 0 10 20 30 Power Gain Gma, Gms = f(IC) Power Gain Gma, Gms = f(IC) f = 0.9GHz f = 1.8GHz VCE = Parameter VCE = Parameter 20 40 mA IC 60 14 dB dB 10V G 16 10V 5V 3V G 3V 3V 10 2V 2V 14 8 12 6 1V 1V 10 4 8 2 0.7V 6 0 10 Semiconductor Group 20 30 40 mA IC 0.7V 0 60 0 6 10 20 30 40 mA IC 60 Dec-16-1996 BFP 93A Power Gain Gma, Gms = f(VCE):_____ |S21 |2 Intermodulation Intercept Point IP3=f(IC) = f(VCE):--------- (3rd order, Output, ZS=ZL=50Ω) f = Parameter VCE = Parameter, f = 900MHz 20 32 IC=30mA 8V dB G 0.9GHz 16 dBm 5V 24 3V IP3 0.9GHz 14 12 2V 20 1.8GHz 10 16 1V 1.8GHz 8 12 6 8 4 4 2 0 0 0 2 4 6 8 V 12 0 10 20 30 40 V CE Power Gain Gma, Gms = f(f) Power Gain |S21|2= f(f) VCE = Parameter VCE = Parameter 35 mA IC 60 32 IC=30mA IC=30mA dB dB G S21 24 25 20 20 16 12 15 8 10 10V 2V 1V 0.7V 5 0 0.0 0.5 1.0 Semiconductor Group 1.5 2.0 2.5 GHz f 10V 2V 1V 0.7V 4 0 -4 0.0 3.5 7 0.5 1.0 1.5 2.0 2.5 GHz f 3.5 Dec-16-1996