Cascadable Silicon Bipolar MMIC␣ Amplifier Technical Data MSA-1120 Features • High Dynamic Range Cascadable 50␣ Ω or 75␣ Ω Gain Block • 3␣ dB Bandwidth: 50␣ MHz to 1.6␣ GHz • 17.5 dBm Typical P1␣ dB at 0.5␣ GHz • 12 dB Typical 50␣ Ω Gain at 0.5␣ GHz • 3.5␣ dB Typical Noise Figure at 0.5␣ GHz • Hermetic Metal/Beryllia Microstrip Package Description The MSA-1120 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a hermetic BeO disk package for good thermal characteristics. This MMIC is designed for high dynamic range in either 50 or 75␣ Ω systems by combining low noise figure with high IP3. Typical applications include narrow and broadband linear amplifiers in industrial and military systems. The MSA-series is fabricated using HP’s 10 GHz fT, 25␣ GHz f MAX silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. Typical Biasing Configuration R bias VCC > 8 V RFC (Optional) 4 C block C block 3 IN 1 2 5965-9559E OUT MSA Vd = 5.5 V 6-466 200 mil BeO Package MSA-1120 Absolute Maximum Ratings Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature Absolute Maximum[1] 100 mA 650 mW +13 dBm 200°C –65 to 200°C Thermal Resistance[2,4]: θjc = 60°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25°C. 3. Derate at 16.7 mW/°C for TC > 161°C. 4. The small spot size of this technique results in a higher, though more accurate determination of θjc than do alternate methods. See MEASUREMENTS section “Thermal Resistance” for more information. Electrical Specifications[1], TA = 25°C Symbol Parameters and Test Conditions: Id = 60 mA, ZO = 50 Ω Units Min. 11.5 GP Power Gain (|S21| 2) f = 0.1 GHz dB ∆GP Gain Flatness f = 0.1 to 1.0 GHz dB f3 dB 3 dB Bandwidth[2] Input VSWR VSWR GHz Typ. Max. 12.5 13.5 ± 0.7 ± 1.0 1.6 f = 0.1 to 1.5 GHz 1.7:1 Output VSWR f = 0.1 to 1.5 GHz NF 50 Ω Noise Figure f = 0.5 GHz 1.9:1 P1 dB Output Power at 1 dB Gain Compression f = 0.5 GHz dBm IP3 Third Order Intercept Point f = 0.5 GHz dBm tD Group Delay f = 0.5 GHz psec Vd Device Voltage dV/dT Device Voltage Temperature Coefficient dB V mV/°C 3.5 16.0 4.5 17.5 30.0 200 4.5 5.5 6.5 –8.0 Notes: 1. The recommended operating current range for this device is 40 to 75 mA. Typical performance as a function of current is on the following page. 2. Referenced from 50 MHz gain (G P). 6-467 MSA-1120 Typical Scattering Parameters (ZO = 50 Ω, TA = 25°C, Id = 60 mA) S11 S21 S12 S22 Freq. GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang k .0005 .005 .025 .050 .100 .200 .300 .400 .500 .600 .700 .800 .900 1.000 1.500 2.000 2.500 3.000 .78 .19 .05 .04 .04 .05 .07 .09 .10 .12 .14 .15 .17 .19 .25 .31 .35 .40 –21 –72 –56 –52 –56 –72 –84 –96 –105 –113 –120 –127 –134 –140 –167 171 157 140 19.6 13.8 12.9 12.5 12.5 12.4 12.4 12.3 12.1 12.0 11.8 11.6 11.4 11.1 9.8 8.4 7.3 6.1 9.53 4.91 4.44 4.23 4.22 4.19 4.15 4.10 4.04 3.98 3.89 3.80 3.71 3.60 3.10 2.64 2.31 2.02 168 165 174 174 172 165 158 151 144 137 131 124 118 112 83 58 39 19 –25.1 –16.8 –16.5 –16.1 –16.2 –16.1 –16.0 –15.9 –15.8 –15.6 –15.4 –15.2 –15.0 –14.8 –14.0 –13.3 –12.8 –12.5 .057 .144 .149 .156 .155 .157 .159 .161 .163 .166 .169 .173 .178 .181 .200 .216 .228 .236 50 11 3 2 1 1 2 2 3 3 2 2 1 2 –3 –10 –16 –23 .79 .19 .06 .04 .04 .06 .09 .11 .13 .16 .18 .20 .22 .24 .31 .35 .36 .36 –21 –72 –75 –79 –78 –91 –101 –109 –117 –124 –130 –136 –142 –148 –174 163 148 134 0.51 0.98 1.08 1.08 1.09 1.08 1.07 1.06 1.05 1.04 1.03 1.01 1.00 0.99 0.95 0.95 0.96 0.99 A model for this device is available in the DEVICE MODELS section. Typical Performance, TA = 25°C, ZO = 50 Ω (unless otherwise noted) 100 16 ZO = 50 Ω 10 60 ZO = 75 Ω 8 40 6 0.1 GHz 0.5 GHz 1.0 GHz, 1.0 GHz 12 Gp (dB) 10 Id (mA) G p (dB) 12 14 TC = +125°C TC = +25°C 80 T = –55°C C 14 2.0 GHz 8 4 6 20 2 0 .02 0 .05 0.1 0.5 1.0 2.0 3.0 4 0 2 4 20 17 20 I d = 75 mA 11 5 18 3 –55 +25 +125 4.0 16 14 NF I d = 60 mA NF (dB) P1 dB (dBm) 12 Gp (dB) 4.5 13 GP 80 5.0 P1 dB 4 60 Figure 3. Power Gain vs. Current. 22 18 16 40 I d (mA) Figure 2. Device Current vs. Voltage. Figure 1. Typical Power Gain vs. Frequency, Id = 60 mA. P1 dB (dBm) 8 Vd (V) FREQUENCY (GHz) NF (dB) 6 3.5 I d = 75 mA I d = 60 mA I d = 40 mA I d = 40 mA 12 0.1 0.2 0.3 0.5 1.0 2.0 3.0 0.1 0.2 0.3 0.5 1.0 2.0 TEMPERATURE (°C) FREQUENCY (GHz) FREQUENCY (GHz) Figure 4. Output Power at 1 dB Gain Compression, Noise Figure and Power Gain vs. Case Temperature, f = 0.5 GHz, Id = 60 mA. Figure 5. Output Power at 1 dB Gain Compression vs. Frequency. Figure 6. Noise Figure vs. Frequency. 6-468 200 mil BeO Package Dimensions 4 GROUND .300 ± .025 7.62 ± .64 45° .030 .76 3 1 RF INPUT NO REFERENCE GROUND 2 .060 1.52 .048 ± .010 1.21 ± .25 RF OUTPUT AND BIAS Notes: (unless otherwise specified) 1. Dimensions are in mm 2. Tolerances in .xxx = ± 0.005 mm .xx = ± 0.13 3. Base of package is electrically isolated. .128 3.25 .205 5.21 .004 ± .002 .10 ± .05 .023 .57 Package marking code is “A11” 6-469