PD - 94283B RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) IRHMS597160 100V, P-CHANNEL 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHMS597160 100K Rads (Si) 0.05Ω IRHMS593160 300K Rads (Si) 0.05Ω ID -45A* -45A* International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. Low-Ohmic TO-254AA Features: n n n n n n n n n n n n Single Event Effect (SEE) Hardened Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Ratings Dynamic dv/dt Ratings Simple Drive Requirements Ease of Paralleling Hermetically Sealed Electically Isolated Ceramic Eyelets Light Weight High Electrical Conductive Package Absolute Maximum Ratings Pre-Irradiation Parameter ID @ V GS = -12V, TC = 25°C ID @ VGS = -12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avalanche Current À Repetitive Avalanche Energy À Peak Diode Recovery dv/dt  Operating Junction Storage Temperature Range Lead Temperature Weight Units -45* -30 -180 208 1.67 ±20 480 -45 20.8 -6.0 -55 to 150 A W W/°C V mJ A mJ V/ns o C 300 (0.063in./1.6mm from case for 10s) 9.3 ( Typical ) g * Current is limited by package For footnotes refer to the last page www.irf.com 1 07/20/04 IRHMS597160 Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter Min Drain-to-Source Breakdown Voltage -100 ∆BVDSS /∆T J Temperature Coefficient of Breakdown — Voltage RDS(on) Static Drain-to-Source On-State — Resistance VGS(th) Gate Threshold Voltage -2.0 gfs Forward Transconductance 24 IDSS Zero Gate Voltage Drain Current — — IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance — — — — — — — — — — Typ Max Units Test Conditions — — V -0.13 — V/°C — 0.05 Ω VGS = -12V, ID = -30A à — — — — -4.0 — -10 -25 V S( ) — — — — — — — — — 6.8 -100 100 170 65 30 35 140 70 45 — nC VDS = VGS, ID = -1.0mA VDS > -15V, IDS = -30A à VDS= -80V ,VGS=0V VDS = -80V, VGS = 0V, TJ = 125°C VGS = -20V VGS = 20V VGS =-12V, ID = -45A VDS = -50V ns VDD = -50V, ID = -45A VGS =-12V, RG = 1.2Ω Ω BVDSS µA nA VGS = 0V, ID = -1.0mA Reference to 25°C, ID = -1.0mA nH Measured from Drain lead (6mm /0.25in. from package) to Source lead (6mm /0.25in. from package) with Source wires internally bonded from Source Pin to Drain Pad Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 6110 1574 115 — — — pF VGS = 0V, VDS = -25V f = 1.0MHz Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units IS ISM VSD t rr Q RR Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) À Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ton Forward Turn-On Time — — — — — — — — — — -45* -180 -5.0 200 1.6 Test Conditions A V ns µC Tj = 25°C, IS = -45A, VGS = 0V à Tj = 25°C, IF =-45A, di/dt ≤ -100A/µs VDD ≤ -25V à Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. * Current is limited by package Thermal Resistance Parameter RthJC RthCS RthJA Junction-to-Case Case-to-Sink Junction-to-Ambient Min Typ Max Units — — — — 0.21 — 0.6 — 48 Test Conditions °C/W Typical socket mount Note: Corresponding Spice and Saber models are available on International Rectifier Website. For footnotes refer to the last page 2 www.irf.com Radiation Characteristics Pre-Irradiation IRHMS597160 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source à On-State Resistance (TO-3) Static Drain-to-Source On-State à Resistance(Low-OhmicTO-254AA) Diode Forward Voltage à Units Test Conditions 100K Rads(Si)1 Min Max 300KRads(Si)2 Min Max -100 -2.0 — — — — — -4.0 -100 100 -10 0.05 -100 -2.0 — — — — — -5.0 -100 100 -10 0.05 nA µA Ω VGS = 0V, ID = -1.0mA V GS = VDS, ID = -1.0mA VGS = -20V VGS = 20 V VDS = -80V, VGS =0V VGS = -12V, ID = -30A — 0.05 — 0.05 Ω VGS = -12V, ID = -30A — -5.0 — -5.0 V VGS = 0V, IS = -45A V 1. Part number IRHMS597160 2. Part number IRHMS593160 International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area Ion Br I Au LET (MeV/(mg/cm2)) 37.9 59.7 82.3 VDS (V) Range (µm) @VGS=0V @VGS=5V @VGS=10V @VGS=15V @VGS=17.5V @VGS=20V 33.1 -100 -100 -100 -100 -100 -100 30.5 -100 -100 -100 -100 -75 -25 28.4 -100 -100 -100 -30 — — Energy (MeV) 252.6 314 350 -120 -100 VDS -80 Br -60 I Au -40 -20 0 0 5 10 15 20 25 VGS Fig a. Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 IRHMS597160 1000 Pre-Irradiation 1000 VGS -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V -I D , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A) 100 100 -5.0V 10 20µs PULSE WIDTH TJ = 25 °C 1 0.1 1 10 -5.0V 10 20µs PULSE WIDTH TJ = 150 °C 1 0.1 100 1 10 100 -VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics RDS(on) , Drain-to-Source On Resistance (Normalized) -I D , Drain-to-Source Current (A) 1000 TJ = 25 ° C 100 10 5.0 TJ = 150 ° C V DS = 15 -50V 20µs PULSE WIDTH 5.5 6.0 6.5 7.0 -VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 4 VGS -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V TOP TOP 2.5 ID = -45A 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = -12V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C) Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com Pre-Irradiation VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd C, Capacitance (pF) 8000 Ciss 6000 Coss 4000 2000 20 -VGS , Gate-to-Source Voltage (V) 10000 IRHMS597160 Crss 0 1 VDS =-80V VDS =-50V VDS =-20V 16 12 8 4 0 10 ID = -45A 100 FOR TEST CIRCUIT SEE FIGURE 13 0 40 120 160 200 240 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 -I D, Drain-to-Source Current (A) 1000 -ISD , Reverse Drain Current (A) 80 QG, Total Gate Charge (nC) -VDS , Drain-to-Source Voltage (V) 100 TJ = 150 ° C 100 TJ = 25 ° C 10 1 V GS = 0 V 0.1 0.0 1.5 3.0 4.5 -VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage www.irf.com OPERATION IN THIS AREA LIMITED BY R DS(on) 6.0 100µs 1ms 10 1 10ms Tc = 25°C Tj = 150°C Single Pulse 1 10 100 1000 -VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area 5 IRHMS597160 Pre-Irradiation 50 V GS 40 -ID , Drain Current (A) RD V DS LIMITED BY PACKAGE D.U.T. RG - + 30 V DD V GS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 20 Fig 10a. Switching Time Test Circuit 10 td(on) tr t d(off) tf VGS 0 10% 25 50 75 100 125 150 TC , Case Temperature ( °C) 90% Fig 9. Maximum Drain Current Vs. Case Temperature VDS Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM 0.01 0.001 0.00001 t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com Pre-Irradiation IRHMS597160 L 1000 - D.U.T RG VGS -20V + IAS tp VVDD DD DRIVER A 0.01Ω 15V Fig 12a. Unclamped Inductive Test Circuit I AS EAS , Single Pulse Avalanche Energy (mJ) VDS ID -20A -28.5A BOTTOM -45A TOP 800 600 400 200 0 25 50 75 100 125 Starting TJ , Junction Temperature ( °C) 150 Fig 12c. Maximum Avalanche Energy Vs. Drain Current tp V(BR)DSS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. QG -12 V QGS 50KΩ -12V 12V .2µF .3µF QGD D.U.T. +VDS VGS VG -3mA Charge Fig 13a. Basic Gate Charge Waveform www.irf.com IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 7 IRHMS597160 Pre-Irradiation Footnotes: à Pulse width ≤ 300 µs; Duty Cycle ≤ 2% Ä Total Dose Irradiation with VGS Bias. À Repetitive Rating; Pulse width limited by maximum junction temperature. Á VDD = -25V, starting TJ = 25°C, L=0.48 mH Peak IL = -45A, VGS = -12V  ISD ≤ -45A, di/dt ≤ -365A/µs, VDD ≤ -100V, TJ ≤ 150°C -12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. Å Total Dose Irradiation with VDS Bias. -80 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions — Low-Omic TO-254AA 0.12 [.005] 6.60 [.260] 6.32 [.249] 13.84 [.545] 13.59 [.535] 3.78 [.149] 3.53 [.139] 1.27 [.050] 1.02 [.040] A 20.32 [.800] 20.07 [.790] 17.40 [.685] 16.89 [.665] 1 C 2 3 17.40 [.685] 16.89 [.665] 3.81 [.150] 1. 2. 3. 4. 2X 0.84 [.033] MAX. 1.14 [.045] 0.89 [.035] 3X NOT ES : B 13.84 [.545] 13.59 [.535] 0.36 [.014] DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. ALL DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ]. CONT ROLLING DIMENS ION: INCH. CONFORMS T O JEDEC OUT LINE T O-254AA. 3.81 [.150] B A PIN AS S IGNMENTS 1 = DRAIN 2 = S OURCE 3 = GATE CAUTION BERYLLIA WARNING PER MIL-PRF-19500 Packages containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 07/2004 8 www.irf.com